公开(公告)号：US20150287909A1

公开(公告)日：2015-10-08

申请号：US14746462

申请日：2015-06-22

Applicant: Micron Technology, Inc.

Inventor： Jun Liu ,  Gurtej Sandhu

IPC: H01L43/08 ,  G11C11/16 ,  H01L43/12 ,  H01L43/02 ,  H01L43/10

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: Techniques for reducing damage in memory cells are provided. Memory cell structures are typically formed using dry etch and/or planarization processes which damage certain regions of the memory cell structure. In one or more embodiments, certain regions of the cell structure may be sensitive to damage. For example, the free magnetic region in magnetic memory cell structures may be susceptible to demagnetization. Such regions may be substantially confined by barrier materials during the formation of the memory cell structure, such that the edges of such regions are protected from damaging processes. Furthermore, in some embodiments, a memory cell structure is formed and confined within a recess in dielectric material.

Abstract translation: 提供了减少存储单元损坏的技术。 通常使用破坏存储单元结构的某些区域的干蚀刻和/或平坦化处理来形成存储单元结构。 在一个或多个实施例中，细胞结构的某些区域可能对损伤敏感。 例如，磁存储单元结构中的自由磁区可能易于退磁。 这样的区域在形成存储单元结构期间可以基本上被阻挡材料限制，使得这些区域的边缘被保护免受损坏的过程。 此外，在一些实施例中，存储单元结构形成并限制在电介质材料的凹部内。

公开(公告)号：US20150125966A1

公开(公告)日：2015-05-07

申请号：US14595955

申请日：2015-01-13

Applicant: Micron Technology, Inc.

Inventor： Jun Liu ,  Gurtej Sandhu

IPC: H01L43/12

CPC classification number: G11C11/1675 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  H01L29/66007 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetic cell structure including a nonmagnetic bridge, and methods of fabricating the structure are provided. The magnetic cell structure includes a free layer, a pinned layer, and a nonmagnetic bridge electrically connecting the free layer and the pinned layer. The shape and/or configuration of the nonmagnetic bridge directs a programming current through the magnetic cell structure such that the cross sectional area of the programming current in the free layer of the structure is less than the cross section of the structure. The decrease in the cross sectional area of the programming current in the free layer enables a lower programming current to reach a critical switching current density in the free layer and switch the magnetization of the free layer, programming the magnetic cell.

Abstract translation: 提供包括非磁性桥的磁性单元结构以及制造该结构的方法。 磁性电池结构包括自由层，钉扎层和电连接自由层和钉扎层的非磁性桥。 非磁性桥的形状和/或构造使编程电流通过磁性单元结构，使得结构自由层中编程电流的横截面面积小于结构的横截面。 自由层中编程电流的横截面积的减小使编程电流能够达到自由层中的关键开关电流密度并切换自由层的磁化，对磁性单元进行编程。

公开(公告)号：US08909000B2

公开(公告)日：2014-12-09

申请号：US14153342

申请日：2014-01-13

Applicant: Micron Technology, Inc.

Inventor： Roy Meade ,  Gurtej Sandhu

IPC: G02F1/035 ,  G02F1/295 ,  G02B6/122 ,  G02F1/225 ,  G02B6/12 ,  G02B6/293

CPC classification number: H04B10/516 ,  G02B6/12007 ,  G02B6/122 ,  G02B6/29343 ,  G02F1/035 ,  G02F1/2252

Abstract: An optical waveguide for transmitting an optical signal input to the optical waveguide with a first frequency. The optical waveguide includes a plurality of modulator circuits configured along an optical transmission channel. Each modulator circuit includes at least one resonant structure that resonates at the first frequency when the modulator circuit that includes the at least one resonant structure is at a resonant temperature. Each modulator circuit has a different resonant temperature.

Abstract translation: 一种光波导，用于以第一频率传输输入到光波导的光信号。 光波导包括沿着光传输通道配置的多个调制器电路。 每个调制器电路包括当包括至少一个谐振结构的调制器电路处于共振温度时以第一频率谐振的至少一个谐振结构。 每个调制器电路具有不同的谐振温度。

公开(公告)号：US20140205289A1

公开(公告)日：2014-07-24

申请号：US14220316

申请日：2014-03-20

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Roy Meade ,  Gurtej Sandhu

IPC: H04Q11/00 ,  H04J14/02

CPC classification number: H04Q11/0005 ,  H04B10/506 ,  H04J14/02

Abstract: A wave division multiplexing (WDM) system is disclosed which accommodates shifts in the resonant frequency of optical modulators by using at least two carriers per optical communications channel and at least two resonant modulator circuits respectively associated with the carriers within each optical modulator. A first resonant modulator circuit resonates with a first carrier and a second resonates with a second carrier when there is a shift in resonance frequency of the at least two resonant optical modulator circuits. A switch circuit controls which carrier is being modulated by its respective resonant modulator circuit.

Abstract translation: 公开了一种波分复用（WDM）系统，其通过使用每个光通信信道中的至少两个载波和分别与每个光调制器内的载波相关联的至少两个谐振调制器电路来适应光调制器的谐振频率的偏移。 当至少两个谐振光调制器电路的谐振频率发生偏移时，第一谐振调制器电路与第一载波谐振，而第二谐振调制器电路与第二载波谐振。 开关电路控制哪个载波被其相应的谐振调制器电路调制。

公开(公告)号：US20140087563A1

公开(公告)日：2014-03-27

申请号：US14094473

申请日：2013-12-02

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Sanket Sant ,  Gurtej Sandhu ,  Neal R. Rueger

IPC: H01L21/033 ,  H01L21/308

CPC classification number: H01L21/3088 ,  H01L21/0337 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/76802 ,  H01L27/1052

Abstract: Multiple pitch-multiplied spacers are used to form mask patterns having features with exceptionally small critical dimensions. One of each pair of spacers formed mandrels is removed and alternating layers, formed of two mutually selectively etchable materials, are deposited around the remaining spacers. Layers formed of one of the materials are then etched, leaving behind vertically-extending layers formed of the other of the materials, which form a mask pattern. Alternatively, instead of depositing alternating layers, amorphous carbon is deposited around the remaining spacers followed by a plurality of cycles of forming pairs of spacers on the amorphous carbon, removing one of the pairs of spacers and depositing an amorphous carbon layer. The cycles can be repeated to form the desired pattern. Because the critical dimensions of some features in the pattern can be set by controlling the width of the spaces between spacers, exceptionally small mask features can be formed.

Abstract translation: 使用多个间距倍数的间隔物来形成具有特别小的临界尺寸的特征的掩模图案。 去除每对间隔件形成的心轴中的一个，并且由两个相互选择性可蚀刻的材料形成的交替层围绕剩余的间隔物沉积。 然后蚀刻由一种材料形成的层，留下由形成掩模图案的另一种材料形成的垂直延伸层。 或者，代替沉积交替的层，非晶碳沉积在剩余的间隔物周围，随后在无定形碳上形成成对隔离物的多个循环，去除一对隔离物之一并沉积无定形碳层。 可以重复循环以形成所需的图案。 由于图案中的某些特征的临界尺寸可以通过控制间隔物之间​​的间隔的宽度来设定，所以可以形成特别小的掩模特征。

公开(公告)号：US20130084695A1

公开(公告)日：2013-04-04

申请号：US13685402

申请日：2012-11-26

Applicant: Micron Technology, Inc.

Inventor： Gurtej Sandhu ,  Bhaskar Srinivasan

IPC: H01L21/04

CPC classification number: H01L21/04 ,  H01L27/1021 ,  H01L27/2418 ,  H01L29/1606 ,  H01L45/00

Abstract: Some embodiments include methods of forming diodes. A stack may be formed over a first conductive material. The stack may include, in ascending order, a sacrificial material, at least one dielectric material, and a second conductive material. Spacers may be formed along opposing sidewalls of the stack, and then an entirety of the sacrificial material may be removed to leave a gap between the first conductive material and the at least one dielectric material. In some embodiments of forming diodes, a layer may be formed over a first conductive material, with the layer containing supports interspersed in sacrificial material. At least one dielectric material may be formed over the layer, and a second conductive material may be formed over the at least one dielectric material. An entirety of the sacrificial material may then be removed.

Abstract translation: 一些实施例包括形成二极管的方法。 堆叠可以形成在第一导电材料上。 堆叠可以按升序包括牺牲材料，至少一种电介质材料和第二导电材料。 间隔物可以沿着堆叠的相对侧壁形成，然后可以去除整个牺牲材料以在第一导电材料和至少一个电介质材料之间留下间隙。 在形成二极管的一些实施例中，可以在第一导电材料上形成层，其中包含支撑体的层散布在牺牲材料中。 可以在该层上形成至少一种介电材料，并且可以在该至少一种电介质材料的上方形成第二导电材料。 然后可以去除整个牺牲材料。

公开(公告)号：US10127962B2

公开(公告)日：2018-11-13

申请号：US15413037

申请日：2017-01-23

Applicant: Micron Technology, Inc.

Inventor： Jun Liu ,  Gurtej Sandhu

IPC: G11C11/16 ,  H01L43/02

Abstract: Spin torque transfer magnetic random access memory devices configured to be programmed unidirectionally and methods of programming such devices. The devices include memory cells having two pinned layers and a free layer therebetween. By utilizing two pinned layers, the spin torque effect on the free layer from each of the two pinned layers, respectively, allows the memory cells to be programmed with unidirectional currents.

公开(公告)号：US10090451B2

公开(公告)日：2018-10-02

申请号：US15056845

申请日：2016-02-29

Applicant: Micron Technology, Inc.

Inventor： Roy Meade ,  Gurtej Sandhu

IPC: H01L33/64 ,  G02B6/12 ,  G02F1/01 ,  G02F1/313

Abstract: Described embodiments include photonic integrated circuits and systems with photonic devices, including thermal isolation regions for the photonic devices. Methods of fabricating such circuits and systems are also described.

公开(公告)号：US20180224614A1

公开(公告)日：2018-08-09

申请号：US15936033

申请日：2018-03-26

Applicant: Micron Technology, Inc.

Inventor： Gurtej Sandhu ,  Roy Meade ,  Lei Bi ,  John Smythe

IPC: G02B6/42 ,  G02B6/30 ,  G02B6/32

CPC classification number: G02B6/4226 ,  G02B6/30 ,  G02B6/32 ,  G02B6/4204 ,  G02B6/4206 ,  G02B6/4225 ,  G02B6/4227 ,  G02B6/4239 ,  Y10T29/42 ,  Y10T29/49

Abstract: A structure for optically aligning an optical fiber to a photonic device and method of fabrication of same. The structure optically aligns an optical fiber to the photonic device using a lens between the two which is moveable by actuator heads. The lens is moveable by respective motive sources associated with the actuator heads.

公开(公告)号：US20180011252A1

公开(公告)日：2018-01-11

申请号：US15701262

申请日：2017-09-11

Applicant: Micron Technology, Inc.

Inventor： Roy Meade ,  Gurtej Sandhu

IPC: G02B6/30 ,  G02B6/12 ,  G02B6/27 ,  G02F1/139 ,  G02B5/30 ,  G02B6/34 ,  G02B6/42 ,  G02F1/29 ,  G02F1/13363 ,  G02B6/124

CPC classification number: G02B6/30 ,  G02B5/3016 ,  G02B6/12004 ,  G02B6/124 ,  G02B6/2706 ,  G02B6/34 ,  G02B6/4221 ,  G02F1/1393 ,  G02F1/292 ,  G02F2001/133638 ,  G02F2203/24

Abstract: Devices and systems to perform optical alignment by using one or more liquid crystal layers to actively steer a light beam from an optical fiber to an optical waveguide integrated on a chip. An on-chip feedback mechanism can steer the beam between the fiber and a grating based waveguide to minimize the insertion loss of the system.