Abstract:
Apparatuses and methods for adaptive control of memory are disclosed. One example apparatus includes a processing unit configured to run an operating system, and a memory coupled to the processing unit. The memory configured to communicate with the processing unit via a memory bus. The example apparatus may further include an adaptive memory controller configured to receive monitored statistical data from the memory and from the processing unit. The adaptive memory controller is configured to manage the memory based on the monitored statistical data.
Abstract:
Apparatuses and methods for a cache memory are described. In an example method, a transaction history associated with a cache block is referenced, and requested information is read from memory. Additional information is read from memory based on the transaction history, wherein the requested information and the additional information are read together from memory. The requested information is cached in a segment of a cache line of the cache block and the additional information in cached another segment of the cache line. In another example, the transaction history is also updated to reflect the caching of the requested information and the additional information. In another example, read masks associated with the cache tag are referenced for the transaction history, the read masks identifying segments of a cache line previously accessed.
Abstract:
A memory device includes a memory component that stores data and a processor. The processor may receive requests from a requesting component to perform a plurality of data operations, generate a plurality of packets associated with the plurality of data operations, and continuously transmit each of the plurality of packets until each of the plurality of packets are transmitted. Each of the plurality of packets after the first packet of the plurality of packets is transmitted on a subsequent clock cycle immediately after a previous packet is transmitted.
Abstract:
Systems, devices and methods are disclosed. In an embodiment of one such method, a method of decoding received command signals, the method comprises decoding the received command signals in combination with a signal provided to a memory address node at a first clock edge of a clock signal to generate a plurality of memory control signals. The received command signals, in combination with the signal provided to the memory address node at the first clock edge of the clock signal, represent a memory command. Furthermore, the signal provided to the memory address node at a second clock edge of the clock signal is not decoded in combination with the received command signals. The memory command may be a reduced power command and/or a no operation command.
Abstract:
Apparatuses and methods for a cache memory are described. In an example method, a transaction history associated with a cache block is referenced, and requested information is read from memory. Additional information is read from memory based on the transaction history, wherein the requested information and the additional information are read together from memory. The requested information is cached in a segment of a cache line of the cache block and the additional information in cached another segment of the cache line. In another example, the transaction history is also updated to reflect the caching of the requested information and the additional information. In another example, read masks associated with the cache tag are referenced for the transaction history, the read masks identifying segments of a cache line previously accessed.
Abstract:
A memory device includes a plurality of memory components that store data and a processor communicatively coupled to the plurality of memory components. The processor may receive a plurality of packets associated with a plurality of data operations, such that each of the plurality of packets includes a transaction window field indicating a type of memory component associated with a respective data operation of the respective packet. The processor may also perform the plurality of data operations in a first order based on the type of memory component indicated in the transaction window field of each of the plurality of packets.
Abstract:
A memory device may include a memory component that stores data and a processor. The processor may map one or more banks or one or more virtual banks in the memory component based on one or more properties associated with the memory component and an expected random access rate for the memory component.
Abstract:
Disclosed are methods and devices, among which is a device that includes a pattern-recognition processor. The pattern-recognition processor may include a matching-data reporting module, which may have a buffer and a match event table. The buffer may be coupled to a data stream and configured to store at least part of the data stream, and the match event table may be configured to store data indicative of a buffer location corresponding with a start of a search criterion being satisfied.
Abstract:
Multi-port memory having an additional control bus for passing commands between ports have individual ports that can be configured to respond to a command received from an external control bus or to a command received from the additional control bus. This facilitates various combinations of ports to vary the bandwidth or latency of the memory to facilitate tailoring performance characteristics to differing applications.
Abstract:
A DRAM memory device includes several banks of memory cells each of which are divided into first and second sets of memory cells. The memory cells in the first set can be refreshed at a relatively slow rate to reduce the power consumed by the DRAM device. Error checking and correcting circuitry in the DRAM device corrects any data retention errors in the first set of memory cells caused by the relatively slow refresh rate. The memory cells in the second set are refreshed at a normal rate, which is fast enough that data retention errors do not occur. A mode register in the DRAM device may be programmed to select the size of the second set of memory cells.