公开(公告)号：US20150279828A1

公开(公告)日：2015-10-01

申请号：US14231101

申请日：2014-03-31

Applicant: Micron Technology, Inc.

Inventor： Michel Koopmans ,  Shijian Luo ,  David R. Hembree

IPC: H01L25/18 ,  H01L23/00 ,  H01L25/00 ,  H01L23/34

CPC classification number: H01L25/0652 ,  H01L23/3675 ,  H01L23/3677 ,  H01L23/373 ,  H01L23/49811 ,  H01L23/49833 ,  H01L23/5226 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/92 ,  H01L25/0657 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13124 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/1329 ,  H01L2224/133 ,  H01L2224/16146 ,  H01L2224/16227 ,  H01L2224/17181 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/92125 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2225/06568 ,  H01L2225/06589 ,  H01L2924/10253 ,  H01L2924/1033 ,  H01L2924/14 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/1436 ,  H01L2924/1437 ,  H01L2924/1438 ,  H01L2924/15156 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/16152 ,  H01L2924/16251 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/014 ,  H01L2924/01047

Abstract: Stacked semiconductor die assemblies with improved thermal performance and associated systems and methods are disclosed herein. In one embodiment, a semiconductor die assembly can include a stack of semiconductor dies and a thermally conductive casing at least partially enclosing the stack of semiconductor dies within an enclosure. A package substrate carries the thermally conductive casing, and an interposer is disposed between the thermally conductive casing and the stack of semiconductor dies. A peripheral portion of the interposer extends laterally beyond the stack of semiconductor dies and is coupled to a plurality of conductive members interposed between the peripheral portion and the package substrate.

Abstract translation: 本文公开了具有改进的热性能和相关联的系统和方法的堆叠的半导体管芯组件。 在一个实施例中，半导体管芯组件可以包括半导体管芯堆叠和至少部分地围绕外壳内的半导体管芯堆叠的导热外壳。 封装衬底承载导热壳体，并且插入件设置在导热壳体和半导体管芯堆叠之间。 插入器的周边部分横向延伸超过半导体管芯堆叠，并且被连接到插入在周边部分和封装衬底之间的多个导电构件。

公开(公告)号：US20140327130A1

公开(公告)日：2014-11-06

申请号：US14334870

申请日：2014-07-18

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Steven Groothuis ,  Jian Li ,  Shijian Luo

IPC: H01L23/367 ,  H01L23/433

CPC classification number: H01L23/367 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/3185 ,  H01L23/34 ,  H01L23/433 ,  H01L25/0657 ,  H01L25/18 ,  H01L2224/131 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06562 ,  H01L2225/06568 ,  H01L2225/06589 ,  H01L2924/15311 ,  H01L2924/00014

Abstract: Semiconductor devices may include a first semiconductor die comprising a heat-generating region located at a periphery thereof. A second semiconductor die is attached to the first semiconductor die. At least a portion of the heat-generating region is located laterally outside a footprint of the second semiconductor die. A thermally insulating material is located on a side surface of the second semiconductor die. Methods of forming semiconductor devices may involve attaching a second semiconductor die to a first semiconductor die. The first semiconductor die includes a heat-generating region at a periphery thereof. At least a portion of the heat-generating region is located laterally outside a footprint of the second semiconductor die. A thermally insulating material is located on a side surface of the second semiconductor die.

Abstract translation: 半导体器件可以包括第一半导体管芯，其包括位于其周边的发热区域。 第二半导体管芯附接到第一半导体管芯。 发热区域的至少一部分位于第二半导体管芯的覆盖区的横向外侧。 绝热材料位于第二半导体管芯的侧表面上。 形成半导体器件的方法可以包括将第二半导体管芯附接到第一半导体管芯。 第一半导体管芯包括在其周边的发热区域。 发热区域的至少一部分位于第二半导体管芯的覆盖区的横向外侧。 绝热材料位于第二半导体管芯的侧表面上。

公开(公告)号：US20140147989A1

公开(公告)日：2014-05-29

申请号：US13689144

申请日：2012-11-29

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Shijian Luo ,  Xiao Li

IPC: C09J11/04 ,  H01L21/18

CPC classification number: C09J11/04 ,  C08K3/013 ,  C08K3/04 ,  C08K3/14 ,  C08K3/22 ,  C08K3/36 ,  C08K7/18 ,  C09J2203/326 ,  H01L21/6835 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381

Abstract: Temporary adhesives include a thermoplastic polymer comprising from about 30% by weight to about 80% by weight of the temporary adhesive, a solvent comprising from about 20% by weight to about 70% by weight of the temporary adhesive, and a filler material comprising from about 0.2% to about 5% by weight of the temporary adhesive. Methods of processing a semiconductor device wafer include bonding the semiconductor device wafer to a surface of a carrier substrate using a temporary adhesive including a filler material comprising from about 0.2% to about 5% by weight of the temporary adhesive, thinning the semiconductor device wafer, and, while the temporary adhesive remains on the surface of the carrier substrate proximate a peripheral edge thereof, subjecting the thinned semiconductor device wafer to one or more back side processing operations. Methods of forming a thinned semiconductor wafer include using such a temporary adhesive.

Abstract translation: 临时粘合剂包括热塑性聚合物，其包含约30重量％至约80重量％的临时粘合剂，包含约20重量％至约70重量％的临时粘合剂的溶剂，以及填料， 约0.2％至约5％的临时粘合剂。 处理半导体器件晶片的方法包括使用包括约0.2重量％至约5重量％的临时粘合剂的填充材料的临时粘合剂将半导体器件晶片接合到载体衬底的表面，使半导体器件晶片变薄， 并且当临时粘合剂在其周边附近残留在载体基板的表面上时，对减薄的半导体器件晶片进行一个或多个背面处理操作。 形成薄化半导体晶片的方法包括使用这种临时粘合剂。