Abstract:
At page 54, please delete the current abstract and replace it with the following: An integrated circuit memory device comprises a latch circuit to load an address using a first control signal. A first signal level transition of the first control signal is used to load the address. A memory array stores data at a memory location that is based on the address. An output buffer outputs the data after a period of time from the first signal level transition. A register stores a value that specifies between at least a first mode and a second mode. When the value specifies the first mode, the output buffer outputs the data in response to address transitions that occur after the first signal level transition. When the value specifies the second mode, the output buffer outputs data synchronously with respect to an external clock signal.
Abstract:
A receive circuit for receiving a signal transmitted via an electric signal conductor. A first sampling circuit generates a first sample value that indicates whether the signal exceeds a first threshold level, and a second sampling circuit generates a second sample value that indicates whether the signal exceeds a second threshold level. A first select circuit receives the first and second sample values from the first and second sampling circuits and selects, according to a previously generated sample value, either the first sample value or the second sample value to be output as a selected sample value.
Abstract:
A technique for receiving differential multi-PAM signals is disclosed. In one particular exemplary embodiment, the technique may be realized as a differential multi-PAM extractor circuit. In this particular exemplary embodiment, the differential multi-PAM extractor circuit comprises an upper LSB sampler circuit configured to receive a differential multi-PAM input signal and a first differential reference signal, and to generate a first differential sampled output signal. The differential multi-PAM extractor circuit also comprises a lower LSB sampler circuit configured to receive the differential multi-PAM input signal and a second differential reference signal, and to generate a second differential sampled output signal. The differential multi-PAM extractor circuit further comprises a combiner circuit configured to receive the first differential sampled output signal and the second differential sampled output signal, and to generate a differential LSB output signal indicating an LSB value of the differential multi-PAM input signal.
Abstract:
The present invention includes a memory subsystem comprising at least two semiconductor devices, including at least one memory device, connected to a bus, where the bus includes a plurality of bus lines for carrying substantially all address, data and control information needed by said memory devices, where the control information includes device-select information and the bus has substantially fewer bus lines than the number of bits in a single address, and the bus carries device-select information without the need for separate device-select lines connected directly to individual devices. The present invention also includes a protocol for master and slave devices to communicate on the bus and for registers in each device to differentiate each device and allow bus requests to be directed to a single or to all devices. The present invention includes modifications to prior-art devices to allow them to implement the new features of this invention. In a preferred implementation, 8 bus data lines and an AddressValid bus line carry address, data and control information for memory addresses up to 40 bits wide.
Abstract:
The present invention includes a memory subsystem comprising at least two semiconductor devices, including at least one memory device, connected to a bus, where the bus includes a plurality of bus lines for carrying substantially all address, data and control information needed by said memory devices, where the control information includes device-select information and the bus has substantially fewer bus lines than the number of bits in a single address, and the bus carries device-select information without the need for separate device-select lines connected directly to individual devices. The present invention also includes a protocol for master and slave devices to communicate on the bus and for registers in each device to differentiate each device and allow bus requests to be directed to a single or to all devices. The present invention includes modifications to prior-art devices to allow them to implement the new features of this invention. In a preferred implementation, 8 bus data lines and an AddressValid bus line carry address, data and control information for memory addresses up to 40 bits wide.
Abstract:
A method of operation of a synchronous memory device. The memory device includes an array of dynamic random access memory cells. The method of operation of the memory device includes receiving an external clock signal, and sampling a first operation code synchronously with respect to the external clock signal, the first operation code specifying a write operation. Additionally, the method of operation of the memory device includes sampling data after a number of clock cycles of the external clock signal transpire. The data is sampled in response to the first operation code.
Abstract:
A method of controlling a memory device, wherein the memory device includes a plurality of memory cells. The method includes providing first block size information to the memory device, wherein the first block size information defines a first amount of data to be input by the memory device in response to a write request. The method further includes issuing a write request to the memory device, wherein in response to the write request the memory device inputs the first amount of data corresponding to the first block size information.
Abstract:
A synchronous memory device having at least one memory section which includes a plurality of memory cells. The memory device includes clock receiver circuitry, clock generation circuitry and input receiver circuitry. The clock receiver circuitry receives an external clock signal from an external bus. The clock generation circuitry is coupled to the clock receiver circuitry, and includes a delay locked loop to generate a first internal clock signal. The input receiver circuitry is coupled to the clock generation circuitry and the external bus to sample information from the external bus in response to the first internal clock signal.
Abstract:
A memory system having a plurality of memory devices, each having at least one memory array which includes a plurality of memory cells. The memory system comprises a bus, a controller, a first memory device, and a second memory device. The bus includes a plurality of sisal lines coupled to the plurality of memory devices. The bus provides a transaction request including identification information generated by the controller, to the plurality of memory devices. The first and second memory device each include a programmable register, interface circuitry, and comparison circuitry. The interface circuitry of each memory device may store a memory identification value to identify each memory device on the bus. The interface circuitry of each memory device is coupled to the bus to receive a transaction request. The comparison circuitry of each memory device is coupled to the programmable register and the interface circuitry to determine whether the identification information in the transaction request corresponds to the memory identification value wherein when the identification information corresponds to a memory identification value, that memory device responds to the transaction request.
Abstract:
The present invention is directed to a method of operating a memory device wherein the memory device includes a plurality of memory cells. The method comprises providing first block size information to the memory device, wherein the first block size information defines a first amount of data to be output onto a bus in response to a read request. The method further includes issuing a first read request to the memory device, wherein in response to the first read request, the memory device outputs the first amount of data corresponding to the first block size information onto the bus synchronously with respect to a first external clock signal and a second external clock signal. In one preferred embodiment, the method may further include providing a code which is representative of a number of clock cycles of the first and second external clock which are to transpire before data is output by the memory device onto the bus. The memory device stores the code in a programmable register on the memory device. In this preferred embodiment, the first amount of data corresponding to the first block size information is output after the number of clock cycles of the first and second external clock transpire. The number of clock cycles may be a whole number or a fraction.