-
公开(公告)号：US07847555B2
公开(公告)日：2010-12-07
申请号：US12050438
申请日：2008-03-18
IPC分类号： G01V3/00
CPC分类号： G01R33/383 , G01R33/3806 , G01R33/3873 , Y10T428/12014
摘要： A magnet which includes ferromagnetic powder to be mainly a mother phase containing iron or cobalt. The ferromagnetic powder is provided with a high-resistance layer which has a resistance higher than or equal to ten times as high as a resistance of the mother phase and a Vickers hardness lower than a Vickers hardness of the mother phase. The high-resistance layer is being formed partially or entirely on the surface of the ferromagnetic powder.
摘要翻译： 一种磁铁，其包括主要是含有铁或钴的母相的铁磁性粉末。 铁磁粉末设置有高电阻层，其电阻高于或等于母相电阻的十倍，维氏硬度低于母相维氏硬度。 高电阻层部分地或完全地形成在铁磁性粉末的表面上。
-
公开(公告)号：US07806991B2
公开(公告)日：2010-10-05
申请号：US11641765
申请日：2006-12-20
申请人： Matahiro Komuro , Yuichi Satsu , Takao Imagawa , Katsumi Ishikawa , Takeyuki Itabashi , Yuzo Kozono
发明人： Matahiro Komuro , Yuichi Satsu , Takao Imagawa , Katsumi Ishikawa , Takeyuki Itabashi , Yuzo Kozono
CPC分类号： H01F1/0577 , H01F1/0572 , H01F1/0579 , H01F41/0293 , H02K1/02 , H02K1/246 , H02K1/276 , H02K1/2766 , H02K1/278
摘要： A lamellar high resistance layer having resistivity ten times or higher than that of a mother phase containing iron or cobalt is formed and an oxygen content is controlled to 10 to 10000 ppm so that the reliability and residual magnetic flux density are increased.
摘要翻译： 形成具有比含有铁或钴的母相的电阻率高十倍以上的层状高电阻层，将氧含量控制在10〜10000ppm，使得可靠性和剩余磁通密度增加。
-
53.发明授权公开(公告)号：US07579275B2
公开(公告)日：2009-08-25
申请号：US10253480
申请日：2002-09-25
CPC分类号： H01L21/76877 , C25D7/12 , C25D17/001 , H01L21/2885
摘要： In electric plating of supplying a current between an anode electrode and a cathode electrode as a plated body immersed in a plating solution thereby forming a plated film comprising a conductor on a surface of the cathode electrode, a preliminary electrolytic electrode that comes in contact with the plating solution before the cathode electrode comes in contact with the plating solution is disposed, and the cathode electrode is brought into contact with the plating solution while supplying a preliminary electrolytic current between the preliminary electrolytic electrode and the anode electrode, whereby a uniform plated film with no voids can be formed while suppressing dissolution of the underlying conductive film in the electric plating treatment.
摘要翻译： 在将阳极电极和阴极电极之间的电流供给到浸渍在电镀液中的电镀体的电镀中，由此在阴极电极的表面形成包含导体的电镀膜，与该电解液接触的预备电解电极 配置阴极与镀液接触之前的镀液，并且在预备电解电极和阳极电极之间提供预备的电解电流的同时使阴极与镀液接触，由此形成均匀的镀膜 在电镀处理中，在抑制下面的导电膜的溶解的同时，不会形成空隙。
-
公开(公告)号：US07352184B2
公开(公告)日：2008-04-01
申请号：US11641757
申请日：2006-12-20
IPC分类号： G01V3/00
CPC分类号： G01R33/383 , G01R33/3806 , G01R33/3873 , Y10T428/12014
摘要： Eddy current generated around a magnetic circuit in an MRI apparatus is one of the causes of deviation from an ideal magnetic field gradient waveform and causes image distortion, loss of strength, ghost generation, loss of signal, and spectral distortion. An object of the present invention is to suppress the generation of the eddy current. In an MRI apparatus, a ferromagnetic material formed from powder is used in a part of a magnetic circuit: the powder mainly comprising a mother phase containing iron or cobalt and showing ferromagnetism; and a high-resistance layer having a resistance not less than ten times as high as the mother phase and a Vickers hardness lower than that of the mother phase being formed in layers along parts of the surface of the powder on parts or the entire of the surface.
摘要翻译： 在MRI装置中围绕磁路产生的涡流是偏离理想磁场梯度波形的原因之一，并且导致图像失真，强度损失，重影产生，信号损失和光谱失真。 本发明的目的是抑制涡电流的产生。 在MRI装置中，在磁路的一部分中使用由粉末形成的铁磁材料，该粉末主要包含含有铁或钴的母相并显示出铁磁性; 以及耐电压不低于母相的十倍的高电阻层，维氏硬度低于母相的部分或全部沿着粉末表面的一部分形成的层， 表面。
-
55.发明申请公开(公告)号：US20070079727A1
公开(公告)日：2007-04-12
申请号：US11634071
申请日：2006-12-06
申请人： Takeyuki Itabashi , Hiroshi Kanemoto , Haruo Akahoshi , Eiji Takai , Naoki Nishimura , Tadashi Iida , Yoshinori Ueda
发明人： Takeyuki Itabashi , Hiroshi Kanemoto , Haruo Akahoshi , Eiji Takai , Naoki Nishimura , Tadashi Iida , Yoshinori Ueda
CPC分类号： C23C18/1803 , C23C18/1653 , C23C18/40
摘要： This invention provides an electroless copper plating solution using glyoxylic acid as a reducing agent, which is small in the reacting quantity of Cannizzaro reaction, does not largely cause precipitation of the salt accumulated in the electroless copper plating solution by the plating reaction and Cannizzaro reaction, and can be used stably over a long period of time. The electroless copper plating solution comprises copper ion, a complexing agent for copper ion, a reducing agent for copper ion and a pH adjusting agent, wherein said reducing agent for copper ion is glyoxylic acid or a salt thereof, said pH adjusting agent is potassium hydroxide and said electroless copper plating solution contains at least one member selected from metasilicic acid, metasilicic acid salt, germanium dioxide, germanic acid salt, phosphoric acid, phosphoric acid salt, vanadic acid, vanadic acid salt, stannic acid and stannic acid salt in an amount of 0.0001 mol/L or more.
摘要翻译： 本发明提供一种使用乙醛酸作为还原剂的化学镀铜溶液，其在坎尼扎罗反应的反应量较小时，不会通过电镀反应和坎尼扎罗反应在很大程度上导致积存在化学镀铜溶液中的盐沉淀， 并可长期稳定使用。 所述无电镀铜溶液包括铜离子，铜离子络合剂，铜离子还原剂和pH调节剂，其中所述铜离子还原剂是乙醛酸或其盐，所述pH调节剂是氢氧化钾 所述化学镀铜溶液含有选自硅酸，偏硅酸盐，二氧化锗，锗酸盐，磷酸，磷酸盐，钒酸，钒酸盐，锡酸和锡酸盐中的至少一种， 为0.0001mol / L以上。
-
56.发明申请Electroless plating method, electroless plating device, and production method and production device of semiconductor device 审中-公开化学镀方法，化学镀装置以及半导体装置的制造方法及制造装置公开(公告)号：US20060102485A1
公开(公告)日：2006-05-18
申请号：US11329093
申请日：2006-01-11
IPC分类号： C25D5/00
CPC分类号： C23C18/1619 , C23C18/1682 , C23C18/1683 , H01L21/288 , H01L21/76843 , H01L21/76849 , H01L21/76874 , H01L23/53223 , H01L2924/0002 , H01L2924/00
摘要： The invention is purposed to reduce the amount of the electroless plating solution used for plating, to facilitate compositional control of the plating solution, and to prevent degradation of quality of the plating film (deposit) by oxygen dissolved in the plating solution. An electroless plating method in which a previously prepared electroless plating solution is exposed to a depressurized atmosphere to decrease the gas components existing in the solution, and while maintaining the plating solution in the form of a continuous thin layer, the surface to be plated of the substrate on which to form an electroless plating film is brought into contact with said layer of the plating solution and maintained in this state for a required period of time to perform electroless plating. An electroless plating device, and a production method and a production device of semiconductor devices are also disclosed.
摘要翻译： 本发明旨在减少用于电镀的化学镀溶液的量，以便于电镀溶液的组成控制，并且防止溶解在电镀溶液中的氧的电镀膜（沉积物）的质量降低。 一种化学镀方法，其中预先制备的化学镀溶液暴露于减压气氛中以减少溶液中存在的气体组分，并且在将镀液保持为连续薄层形式的同时，镀覆表面 使形成无电解镀膜的基板与所述电镀液层接触，并在该状态下保持需要的时间以进行无电镀。 还公开了一种化学镀装置，以及半导体装置的制造方法和制造装置。
-
公开(公告)号：US06900394B1
公开(公告)日：2005-05-31
申请号：US09678800
申请日：2000-10-04
申请人： Takeyuki Itabashi , Haruo Akahoshi , Tadashi Iida , Yoshinori Ueda , Eiji Takai , Naoki Nishimura
发明人： Takeyuki Itabashi , Haruo Akahoshi , Tadashi Iida , Yoshinori Ueda , Eiji Takai , Naoki Nishimura
CPC分类号： C23C18/1617 , C23C18/40 , H05K3/187
摘要： A method is provided for removing plating blocking ions, such as anions, in pairs with copper ions and oxidant ions of a copper ion reducing agent from an electroless copper plating solution and keeping a constant salt concentration in the electroless copper plating solution during plating. The electroless copper plating method uses a plating solution containing copper sulfate as copper ion sources, and a copper ion complexing agent as copper ion sources, glyoxylic acid as a copper ion reducing agent, and a pH conditioner. The method is characterized by precipitating and removing sulfuric and oxalic ions in said electroless copper plating solution and keeping an optimum concentration of at least one of sulfuric and oxalic ions in said electroless copper plating solution during plating.
摘要翻译： 提供了一种从电化学镀铜溶液中去除铜离子还原剂的铜离子和氧化剂离子的电镀阻挡离子（例如阴离子）的方法，并且在镀覆期间在化学镀铜溶液中保持恒定的盐浓度。 无电镀铜方法使用含有硫酸铜作为铜离子源的镀液，铜离子源铜离子络合剂，作为铜离子还原剂的乙醛酸和pH调节剂。 该方法的特征在于在所述化学镀铜溶液中析出和除去硫酸和草酸离子，并且在镀覆期间保持所述无电镀铜溶液中的硫酸和草酸离子中的至少一种的最佳浓度。
-
58.发明申请公开(公告)号：US20050087447A1
公开(公告)日：2005-04-28
申请号：US10996382
申请日：2004-11-26
IPC分类号： C25D3/38 , C25D7/12 , H01L21/288 , H01L21/768 , H01L23/522 , H05K3/42
摘要： An object of the present invention is to improve the reliability and the yield of production of semiconductor integrated circuit devices by filling copper in the inside of features having a high aspect ratio for forming multi-layer interconnections composed of a plurality of interconnection layers which are connected to one another and to a copper electroplating bath suitable therefor. In the present invention, when the features are filled with copper, the use of a copper electroplating bath with an addition of cyanine dyes, for example, indolium compounds allows the copper plating to proceed preferentially from the bottoms of the features.
摘要翻译： 本发明的目的是通过在具有高纵横比的特征内部填充铜来提高半导体集成电路器件的可靠性和生产成本，以形成由连接的多个互连层组成的多层互连 彼此之间和适合于此的铜电镀浴。 在本发明中，当特征填充有铜时，使用带有花青染料的铜电镀浴，例如，吲哚鎓化合物，可使铜镀层优先从特征的底部进行。
-
59.发明申请Electroless plating method, electroless plating device, and production method and production device of semiconductor device 审中-公开化学镀方法，化学镀装置以及半导体装置的制造方法及制造装置公开(公告)号：US20050022745A1
公开(公告)日：2005-02-03
申请号：US10898201
申请日：2004-07-26
IPC分类号： C23C18/16 , B05D1/18 , H01L21/288 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L23/532
CPC分类号： C23C18/1619 , C23C18/1682 , C23C18/1683 , H01L21/288 , H01L21/76843 , H01L21/76849 , H01L21/76874 , H01L23/53223 , H01L2924/0002 , H01L2924/00
摘要： The invention is purposed to reduce the amount of the electroless plating solution used for plating, to facilitate compositional control of the plating solution, and to prevent degradation of quality of the plating film (deposit) by oxygen dissolved in the plating solution. An electroless plating method in which a previously prepared electroless plating solution is exposed to a depressurized atmosphere to decrease the gas components existing in the solution, and while maintaining the plating solution in the form of a continuous thin layer, the surface to be plated of the substrate on which to form an electroless plating film is brought into contact with said layer of the plating solution and maintained in this state for a required period of time to perform electroless plating. An electroless plating device, and a production method and a production device of semiconductor devices are also disclosed.
摘要翻译： 本发明旨在减少用于电镀的化学镀溶液的量，以便于电镀溶液的组成控制，并且防止溶解在电镀溶液中的氧的电镀膜（沉积物）的质量降低。 一种化学镀方法，其中预先制备的化学镀溶液暴露于减压气氛中以减少溶液中存在的气体组分，并且在将镀液保持为连续薄层形式的同时，镀覆表面 使形成无电解镀膜的基板与所述电镀液层接触，并在该状态下保持需要的时间以进行无电镀。 还公开了一种化学镀装置，以及半导体装置的制造方法和制造装置。
-
公开(公告)号：US06511588B1
公开(公告)日：2003-01-28
申请号：US09545093
申请日：2000-04-07
申请人： Kinya Kobayashi , Akihiro Sano , Takeyuki Itabashi , Toshio Haba , Haruo Akahoshi , Shinichi Fukada
发明人： Kinya Kobayashi , Akihiro Sano , Takeyuki Itabashi , Toshio Haba , Haruo Akahoshi , Shinichi Fukada
IPC分类号： C25D302
CPC分类号： H01L21/2885 , C25D3/38 , C25D7/123 , H01L21/76877
摘要： A plating method comprising using a plating solution containing an additive satisfying the following conditions: 0.005×h2/w
摘要翻译： 一种电镀方法，其特征在于，使用含有满足以下条件的添加剂的镀液：D为添加剂的扩散系数; kappa是添加剂的吸附或消耗的表面反应速率; h是沟槽或洞的高度; w是沟槽的宽度或孔的半径; 和THETA是（存在添加剂时的镀膜生长速度）/（不存在添加剂时的镀膜生长速度）的比例，适合于在宽度为1μm以下的沟槽或孔中形成电镀金属 （沟槽）或半径小于1μm的孔（孔）而不产生空隙，并且特别适合于制造半导体器件，其可以通过使用电镀条件具有形成在半导体衬底上的铜布线层的多层结构，其中至少 在与铜布线层的其余部分不同的条件下对一层铜布线层进行电镀。
-
-
-
-
-
-
-
-
-
搜索结果
61 条记录 (耗时 0.046 秒)
