公开(公告)号：US08907279B2

公开(公告)日：2014-12-09

申请号：US14123744

申请日：2012-05-24

申请人： Natsuki Tsuno ,  Hideyuki Kazumi ,  Yuzuru Mochizuki ,  Takafumi Miwa ,  Yoshinobu Kimura ,  Toshiyuki Yokosuka

发明人： Natsuki Tsuno ,  Hideyuki Kazumi ,  Yuzuru Mochizuki ,  Takafumi Miwa ,  Yoshinobu Kimura ,  Toshiyuki Yokosuka

IPC分类号： H01J37/26 ,  G01B15/04 ,  H01J37/28

CPC分类号： H01J37/265 ,  G01B15/04 ,  H01J37/28 ,  H01J2237/24585 ,  H01J2237/2803

摘要： The present invention is characterized by an electron microscope which intermittently applies an electron beam to a sample and detects a secondary electron signal, wherein an arbitrarily defined detection time (T2) shorter than the pulse width (Tp) of the applied electron beam is selected, and a secondary electron image is formed using the secondary electron signal acquired during the detection time. Consequently, it is possible to reflect necessary sample information including the internal structure and laminated interface of the sample in the contrast of an image and prevent unnecessary information from being superimposed on the image, thereby making it possible to obtain the secondary electron image with improved sample information selectivity and image quality.

摘要翻译： 本发明的特征在于电子显微镜，其间断地向样品施加电子束并检测二次电子信号，其中选择比所施加的电子束的脉冲宽度（Tp）短的任意定义的检测时间（T2） 并且使用在检测时间期间获取的二次电子信号形成二次电子图像。 因此，可以在图像的对比度中反映包括样本的内部结构和层叠界面的必要样本信息，并且防止不必要的信息被叠加在图像上，从而可以获得具有改进的样本的二次电子图像 信息选择性和图像质量。

公开(公告)号：US20130173986A1

公开(公告)日：2013-07-04

申请号：US13693360

申请日：2012-12-04

申请人： Akihiro Sakata ,  Yoshinobu Kimura

发明人： Akihiro Sakata ,  Yoshinobu Kimura

IPC分类号： H03M13/29

CPC分类号： H03M13/29 ,  G06F11/1004 ,  H03M13/2906

摘要： A memory controller includes a first error detection code generator for generating a first error detection code for data received from a host, a controller to write the data and the first error detection code to nonvolatile memory and to read the data and the first error detection code from the nonvolatile memory, an error detector to perform an error detection based on the data and the first error detection code that are read from the nonvolatile memory, a second error detection code generator to generate a second detection error code based on the data read from the nonvolatile memory, and a mismatch code generator to generate a mismatch code signaling the presence of an error in the data, wherein either the second error detection code or the mismatch code is selected based on the error detection and sent to the host.

摘要翻译： 存储器控制器包括：第一错误检测码发生器，用于产生用于从主机接收的数据的第一错误检测码，控制器将数据和第一错误检测码写入非易失性存储器，并读取数据和第一错误检测码 来自所述非易失性存储器的误差检测器，基于从所述非易失性存储器读取的所述数据和所述第一检错码执行错误检测;第二检错码发生器，用于基于从所述非易失性存储器读取的数据产生第二检测错误代码; 所述非易失性存储器和不匹配码发生器产生用于发信号通知所述数据中存在错误的不匹配码，其中所述第二错误检测码或所述不匹配码是基于所述错误检测被选择的并被发送给所述主机。

公开(公告)号：US20110018032A1

公开(公告)日：2011-01-27

申请号：US12894609

申请日：2010-09-30

申请人： Masao KONDO ,  Nobuyuki Sugii ,  Yoshinobu Kimura

发明人： Masao KONDO ,  Nobuyuki Sugii ,  Yoshinobu Kimura

IPC分类号： H01L29/78

CPC分类号： H01L29/7835 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/6659 ,  H01L29/66659

摘要： A semiconductor device is provided which is capable of suppressing a reduction in electron mobility in a channel region formed in a strained silicon layer. A strained silicon layer is formed over a p type silicon-germanium layer formed over a semiconductor substrate. The strained layer has a thickness adjusted to be thicker than the critical film thickness at which no misfit dislocation occurs. Accordingly, misfit dislocations occur in the vicinity of the interface between the strained silicon layer and silicon-germanium layer.

摘要翻译： 提供一种半导体器件，其能够抑制在应变硅层中形成的沟道区域中的电子迁移率的降低。 在半导体衬底上形成的p型硅 - 锗层上形成应变硅层。 应变层的厚度被调整为比不发生失配位错的临界膜厚度更厚。 因此，失配位错发生在应变硅层和硅 - 锗层之间的界面附近。

公开(公告)号：US07868425B2

公开(公告)日：2011-01-11

申请号：US12251081

申请日：2008-10-14

申请人： Masao Kondo ,  Nobuyuki Sugii ,  Yoshinobu Kimura

发明人： Masao Kondo ,  Nobuyuki Sugii ,  Yoshinobu Kimura

IPC分类号： H01L31/117

CPC分类号： H01L29/7835 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/6659 ,  H01L29/66659

摘要： Provided is a technology capable of suppressing a reduction in electron mobility in a channel region formed in a strained silicon layer. A p type strained silicon layer is formed over a p type silicon-germanium layer formed over a semiconductor substrate. The p type strained layer has a thickness adjusted to be thicker than the critical film thickness at which no misfit dislocation occurs. Accordingly, misfit dislocations occur in the vicinity of the interface between the p type strained silicon layer and p type silicon-germanium layer. At a position which is below the end of a gate electrode and at which misfit dislocations occur, the impurity concentration of the n type strained silicon layer and n type silicon-germanium layer is 1×1019 cm−3 or less.

摘要翻译： 提供了能够抑制形成在应变硅层中的沟道区域中的电子迁移率降低的技术。 在半导体衬底上形成的p型硅 - 锗层上形成p型应变硅层。 p型应变层的厚度被调整为比没有失配位错发生的临界膜厚度更厚。 因此，在p型应变硅层和p型硅 - 锗层之间的界面附近发生失配位错。 在低于栅电极的端部并发生失配位错的位置处，n型应变硅层和n型硅 - 锗层的杂质浓度为1×1019cm-3以下。

公开(公告)号：US07531853B2

公开(公告)日：2009-05-12

申请号：US11746230

申请日：2007-05-09

申请人： Shinichi Saito ,  Digh Hisamoto ,  Yoshinobu Kimura ,  Nobuyuki Sugii ,  Ryuta Tsuchiya

发明人： Shinichi Saito ,  Digh Hisamoto ,  Yoshinobu Kimura ,  Nobuyuki Sugii ,  Ryuta Tsuchiya

IPC分类号： H01L29/80 ,  H01L31/112 ,  H01L29/76 ,  H01L29/94 ,  H01L31/00

CPC分类号： H01L27/1203 ,  H01L21/823807 ,  H01L21/823878 ,  H01L21/84 ,  H01L29/045 ,  H01L29/7846 ,  H01L29/785

摘要： A semiconductor device and manufacturing method of the same is provided in which the driving current of a pMOSFET is increased, through a scheme formed easily using an existing silicon process. A pMOSFET is formed with a channel in a direction on a (100) silicon substrate. A compressive stress is applied in a direction perpendicular to the channel by an STI.

摘要翻译： 提供了一种半导体器件及其制造方法，其中通过使用现有的硅工艺容易地形成的方案，增加了pMOSFET的驱动电流。 在（100）硅衬底上形成具有<100>方向的沟道的pMOSFET。 通过STI在垂直于通道的方向上施加压应力。

公开(公告)号：US06529304B1

公开(公告)日：2003-03-04

申请号：US09381199

申请日：1999-09-17

申请人： Yoshinobu Kimura ,  Masanobu Miyao ,  Kiyokazu Nakagawa ,  Nobuyuki Sugii ,  Takuya Maruizumi

发明人： Yoshinobu Kimura ,  Masanobu Miyao ,  Kiyokazu Nakagawa ,  Nobuyuki Sugii ,  Takuya Maruizumi

IPC分类号： H04B1000

CPC分类号： H04B10/564 ,  G02B6/3636 ,  G02B6/3652 ,  G02B6/4202 ,  H01S5/0262 ,  H01S5/0264 ,  H01S5/0425 ,  H01S5/1228 ,  H04B10/291 ,  H04B10/504

摘要： Configurations of a light signal communication apparatus and an optical communication system suitable for speeding-up of the transmission of information based on a light signal and an increase in the capacity for the information transmission are disclosed. On the light signal transmitting side, excitation light is supplied to an active medium in accordance with a transmission signal to cause induced emission within the active medium, thereby generating signal light. The excitation light causes spontaneously-emitted light to fall on a semiconductor layer, and a voltage pulse corresponding to transmission information is applied to modulate the refractive index of the semiconductor layer, thereby Bragg-reflecting a specific wavelength component, after which it is sent to the active medium as the excitation light. The Bragg reflection and induced emission incident to it exhibit excellent response to a voltage signal having a pulse width of 1×10−9 seconds or less. It is therefore possible to implement an optical communication system having a transmission rate up to 100 Gb/s with one light signal.

摘要翻译： 公开了一种适于基于光信号加速信息传输和信息传输容量增加的光信号通信装置和光通信系统的配置。 在光信号发送侧，根据发送信号将激励光提供给有源介质，以在有源介质内产生感应发射，从而产生信号光。 激发光引起自发发射的光落在半导体层上，施加与透射信息相对应的电压脉冲，以调制半导体层的折射率，由此布拉格反射特定波长分量，之后将其发送到 活性介质作为激发光。 入射到其的布拉格反射和感应发射对脉冲宽度为1×10-9秒或更小的电压信号表现出优异的响应。 因此，可以通过一个光信号实现具有高达100Gb / s的传输速率的光通信系统。

公开(公告)号：US06452213B1

公开(公告)日：2002-09-17

申请号：US09696002

申请日：2000-10-26

申请人： Yoshinobu Kimura ,  Makoto Ohkura ,  Takeo Shiba ,  Takahiro Kamo ,  Yoshiyuki Kaneko

发明人： Yoshinobu Kimura ,  Makoto Ohkura ,  Takeo Shiba ,  Takahiro Kamo ,  Yoshiyuki Kaneko

IPC分类号： H01L29786

CPC分类号： H01L29/66757 ,  H01L27/1281 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/78603 ,  H01L29/78621 ,  H01L29/78633 ,  H01L29/78675

摘要： A first thin film is formed on one surface of an insulating base, and a second thin film having a thermal conductivity higher than the first thin film is formed on the first thin film. An amorphous semiconductor thin film having a higher thermal conductivity than the second thin film is formed on at least the second thin film. The amorphous semiconductor thin film is changed to a polycrystalline semiconductor thin film through laser annealing. The provision of the second thin film results in larger and uniform crystal grain diameters and less proturberances in the polycrystalline semiconductor thin film.

摘要翻译： 第一薄膜形成在绝缘基底的一个表面上，并且在第一薄膜上形成具有高于第一薄膜的导热率的第二薄膜。 至少在第二薄膜上形成具有比第二薄膜更高的热导率的非晶半导体薄膜。 通过激光退火将非晶半导体薄膜变为多晶半导体薄膜。 提供第二薄膜导致多晶半导体薄膜中更大且均匀的晶粒直径和较少的保护性。

公开(公告)号：US4540252A

公开(公告)日：1985-09-10

申请号：US602746

申请日：1984-04-23

申请人： Mikio Hayashi ,  Kouzi Kawasumi ,  Yoshinobu Kimura

发明人： Mikio Hayashi ,  Kouzi Kawasumi ,  Yoshinobu Kimura

IPC分类号： B60R1/06 ,  B60R1/02 ,  G02B5/08

CPC分类号： B60R1/025 ,  Y10T74/20207 ,  Y10T74/2101

摘要： A side mirror driving apparatus having a side mirror swingably attached to a housing and a driving apparatus supported by the housing. The driving apparatus includes a gear driven by an electric motor and the mirror is operatively linked with the gear by means of a lift lever so that the mirror is inclined in an up-and downward direction and/or left-and rightward direction. At a side of a rear surface of the gear, there is provided a set position stopping device, so that the mirror can be automatically returned to its initial position.

摘要翻译： 一种侧镜驱动装置，其具有可摆动地附接到壳体的侧反射镜和由壳体支撑的驱动装置。 驱动装置包括由电动机驱动的齿轮，并且反射镜通过提升杆与齿轮可操作地连接，使得反射镜在上下方向和/或左右方向上倾斜。 在齿轮的后表面的一侧设置有设定位置停止装置，使得镜子能够自动返回到其初始位置。

公开(公告)号：US3967483A

公开(公告)日：1976-07-06

申请号：US496995

申请日：1974-08-13

申请人： Moritaka Kuroyahagi ,  Yoshinobu Kimura ,  Hirotoku Takeuchi ,  Masao Takegami

发明人： Moritaka Kuroyahagi ,  Yoshinobu Kimura ,  Hirotoku Takeuchi ,  Masao Takegami

IPC分类号： B21D37/14 ,  B30B15/00 ,  B30B15/06 ,  B30B15/14 ,  B21J9/20

CPC分类号： B30B15/0035 ,  B30B15/0041

摘要： A device is disclosed for positioning the slide of a press to compensate for insufficiencies of the stroke. A predetermined preload is first adjusted to the slide to take up clearances which may be present between the various moving parts of the press, dies and material to be processed. A slide preload compensating amount is then additionally adjusted to the slide equivalent to the amount of deformation of compression which the slide and frame will undergo during a working stroke. Therefore, the vertical position of the slide is established with the insufficiencies of the stroke eliminated. The device comprises in combination a worm mechanism having a worm shaft for adjusting the vertical position of said slide, an oil pressure motor for driving said worm mechanism, a torque limiter through which the driving force from said oil pressure motor is transmitted to said worm mechanism and a rotary pulse generator adapted to be rotated by said worm shaft of the worm mechanism and in which the rotation of the oil pressure motor is controlled by a servo valve adapted to be actuated at a value obtainable from the comparison between a pulse amount generated from said rotary pulse generator and a pulse corresponding to a predetermined frame deformation compensating amount and by an electromagnetic valve adapted to control the rotation direction of the oil pressure motor.

摘要翻译： 公开了一种用于定位压机滑块以补偿冲程不足的装置。 首先将预定的预载量调整到滑动件以吸收可能存在于压力机的各种运动部件，模具和待处理材料之间的间隙。 然后另外将滑动预载补偿量调整到与滑块和框架在工作冲程期间经受的压缩变形量相当的滑块。 因此，滑动件的垂直位置是由于消除了行程的不足造成的。 该装置组合有蜗杆机构，其具有用于调节所述滑块的垂直位置的蜗杆轴，用于驱动所述蜗杆机构的油压马达，将来自所述油压马达的驱动力传递到所述蜗杆机构的扭矩限制器 以及旋转脉冲发生器，其适于由所述蜗杆机构的所述蜗杆轴旋转，并且所述旋转脉冲发生器适于由所述蜗杆机构的所述蜗杆轴旋转，并且所述旋转脉冲发生器通过适于被致动的伺服阀来控制所述油压马达的转动，所述伺服阀以从 所述旋转脉冲发生器和对应于预定的框架变形补偿量的脉冲以及适于控制油压马达的旋转方向的电磁阀。

公开(公告)号：US08034696B2

公开(公告)日：2011-10-11

申请号：US11802048

申请日：2007-05-18

申请人： Ryuta Tsuchiya ,  Yoshinobu Kimura ,  Yusuke Morita

发明人： Ryuta Tsuchiya ,  Yoshinobu Kimura ,  Yusuke Morita

IPC分类号： H01L21/20

CPC分类号： C30B23/00 ,  C30B25/00

摘要： It is an object of the present invention to provide a method of manufacturing an SOI wafer at low cost and with high yield. It is another object of the present invention to provide a semiconductor device including also bulk type MISFETs used as high voltage regions and a method of manufacturing the same without using complicated processes and increasing the size of a semiconductor chip.The method of manufacturing a semiconductor device comprises selectively epitaxially growing a single-crystal Si layer and continuously performing the epitaxial growth without bringing a substrate temperature increased during the growth to room temperature even once. An epitaxially grown surface is then etched and planarized. The substrate temperature is then cooled down to the room temperature.

摘要翻译： 本发明的目的是提供一种以低成本和高产率制造SOI晶片的方法。 本发明的另一个目的是提供一种半导体器件，其还包括用作高电压区域的体型型MISFET及其制造方法，而不需要使用复杂的工艺并增加半导体芯片的尺寸。 制造半导体器件的方法包括选择性地外延生长单晶Si层并连续进行外延生长，而不会使基板温度在生长至室温期间增加甚至一次。 然后将外延生长的表面蚀刻并平坦化。 然后将衬底温度冷却至室温。