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80 条记录 (耗时 0.032 秒)

    Semiconductor device and method of fabricating the same
    52.
    发明授权
    Semiconductor device and method of fabricating the same 失效
    半导体装置及其制造方法

    公开(公告)号：US5929466A

    公开(公告)日：1999-07-27

    申请号：US874299

    申请日：1997-06-13

    申请人： Yasuo Ohba ,  Ako Hatano

    发明人： Yasuo Ohba ,  Ako Hatano

    IPC分类号： H01L29/201 ,  H01L29/205 ,  H01L31/0304 ,  H01L33/00 ,  H01L33/32 ,  H01S5/02 ,  H01S5/042 ,  H01S5/323

    CPC分类号： H01L33/32 ,  H01L29/201 ,  H01L29/205 ,  H01L33/007 ,  H01S5/32341 ,  H01S5/0208 ,  H01S5/0425

    摘要： A semiconductor device comprises a single crystal substrate, a nucleus formation buffer layer formed on the single crystal substrate, and a lamination layer including a plurality of Al.sub.1-x-y Ga.sub.x In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, x+y.ltoreq.1) layers laminated above the nucleus formation buffer layer. The nucleus formation buffer layer is formed of Al.sub.1-s-t Ga.sub.s In.sub.t N (0.ltoreq.s.ltoreq.1, 0.ltoreq.t.ltoreq.1, s+t.ltoreq.1) and is formed on a surface of the substrate such that the nucleus formation buffer layer has a number of pinholes for control of polarity and formation of nuclei. A method of fabricating a semiconductor device comprises the steps of: forming, above an Al.sub.1-x-y Ga.sub.x In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, x+y.ltoreq.1) semiconductor layer doped with a p-type dopant, a cap layer for preventing evaporation of a constituent element of the semiconductor layer, the cap layer being formed of one of AlN in which a p-type dopant is added and A1.sub.2 O.sub.3, subjecting the semiconductor layer to heat treatment, and removing at least a part of the cap layer.

    摘要翻译： 半导体器件包括单晶衬底，形成在单晶衬底上的核形成缓冲层，以及包括多个Al1-x-yGaxInyN（0≤x≤1,0

    Semiconductor heterojunction device with ALN buffer layer of 3nm-10nm average film thickness
    53.
    发明授权
    Semiconductor heterojunction device with ALN buffer layer of 3nm-10nm average film thickness 失效
    半导体异质结装置，具有3nm-10nm平均膜厚度的ALN缓冲层

    公开(公告)号：US5656832A

    公开(公告)日：1997-08-12

    申请号：US400865

    申请日：1995-03-08

    申请人： Yasuo Ohba ,  Ako Hatano

    发明人： Yasuo Ohba ,  Ako Hatano

    IPC分类号： H01L29/201 ,  H01L29/205 ,  H01L31/0304 ,  H01L33/00 ,  H01L33/32 ,  H01S5/02 ,  H01S5/042 ,  H01S5/323 ,  H01L27/15 ,  H01S3/19

    CPC分类号： H01L33/32 ,  H01L29/201 ,  H01L29/205 ,  H01L33/007 ,  H01S5/32341 ,  H01S5/0208 ,  H01S5/0425

    摘要： A semiconductor device comprises a single crystal substrate, a nucleus formation buffer layer formed on the single crystal substrate, and a lamination layer including a plurality of Al.sub.1-x-y Ga.sub.x In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, x+y.ltoreq.1) layers laminated above the nucleus formation buffer layer. The nucleus formation buffer layer is formed of Al.sub.1-s-t Ga.sub.s In.sub.t N (0.ltoreq.s .ltoreq.1, 0.ltoreq.t.ltoreq.1, s+t.ltoreq.1) and is formed on a surface of the substrate such that the nucleus formation buffer layer has a number of pinholes for control of polarity and formation of nuclei. A method of fabricating a semiconductor device comprises the steps of: forming, above an Al.sub.1-x-y Ga.sub.x In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, x+y.ltoreq.1) semiconductor layer doped with a p-type dopant, a cap layer for preventing evaporation of a constituent element of the semiconductor layer, the cap layer being formed of one of AlN in which a p-type dopant is added and Al.sub.2 O.sub.3, subjecting the semiconductor layer to heat treatment, and removing at least a part of the cap layer.

    摘要翻译： 半导体器件包括单晶衬底，形成在单晶衬底上的核形成缓冲层，以及包括多个Al1-x-yGaxInyN（0≤x≤1,0

    Method and apparatus for rendering three-dimensional images of objects with hand-drawn appearance in real time
    56.
    发明授权
    Method and apparatus for rendering three-dimensional images of objects with hand-drawn appearance in real time 有权
    用于实时绘制手绘外观的物体的三维图像的方法和装置

    公开(公告)号：US07327364B2

    公开(公告)日：2008-02-05

    申请号：US10661645

    申请日：2003-09-15

    申请人： Yasuo Ohba ,  Akinari Kaneko ,  Hiroki Nagaoka

    发明人： Yasuo Ohba ,  Akinari Kaneko ,  Hiroki Nagaoka

    IPC分类号： G06T15/50

    CPC分类号： G06T15/02 ,  A63F2300/6692 ,  G06T15/60 ,  G06T15/80

    摘要： An image generating method for producing a pictorial image at higher speed when a three-dimensional object is arranged in an object space. The image generating method has: generating at least one of retouched image of a three-dimensional image by arranging a plurality of brush images so as to superpose a part of the plurality of brush images on one another part of the plurality of brush images within a rendering region on which the three-dimensional object is projected on the basis of a predetermined viewpoint; generating a projection image by projecting the three-dimensional object on the basis of the predetermined viewpoint; and rendering an image of the three-dimensional object so as to reflect color information of the projection image at a part at which the retouched image is transparent by synthesizing the retouched image with the projection image.

    摘要翻译： 一种用于当将三维物体布置在物体空间中时以较高速度产生图形图像的图像产生方法。 图像生成方法具有：通过布置多个画笔图像来生成三维图像的修饰图像中的至少一个，以便将多个画笔图像的一部分叠加在多个画笔图像的另一部分上 基于预定视点投影三维物体的渲染区域; 通过基于预定视点投影三维物体来产生投影图像; 以及渲染所述三维物体的图像，以便通过用所述投影图像合成所述经过修饰的图像，来反映在所述润饰图像透明的部分处的所述投影图像的颜色信息。

    Light emitting device
    57.
    发明申请
    Light emitting device 失效
    发光装置

    公开(公告)号：US20070034883A1

    公开(公告)日：2007-02-15

    申请号：US11441149

    申请日：2006-05-26

    申请人： Yasuo Ohba

    发明人： Yasuo Ohba

    IPC分类号： H01L33/00

    CPC分类号： H01L33/08 ,  H01L27/15 ,  H01L33/32 ,  H01L33/504 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014

    摘要： A light emitting device includes a transparent substrate having first and second surfaces, a semiconductor layer provided on the first surface, a first light emission layer provided on the semiconductor layer and emitting first ultraviolet light including a wavelength corresponding to an energy larger than a forbidden bandwidth of a semiconductor of the semiconductor layer, a second light emission layer provided between the first light emission layer and the semiconductor layer, absorbing the first ultraviolet light emitted from the first light emission layer, and emitting second ultraviolet light including a wavelength corresponding to an energy smaller than the forbidden bandwidth of the semiconductor of the semiconductor layer, and first and second electrodes provided to apply electric power to the first light emission layer.

    摘要翻译： 发光装置包括具有第一表面和第二表面的透明基板，设置在第一表面上的半导体层，设置在半导体层上的第一发光层，并且发射包括对应于大于禁止带宽的能量的波长的第一紫外线 设置在所述第一发光层和所述半导体层之间的第二发光层，吸收从所述第一发光层发射的所述第一紫外线，以及发射包括对应于能量的波长的第二紫外线 小于半导体层的半导体的禁止带宽，以及设置成向第一发光层施加电力的第一和第二电极。

    Semiconductor light-emitting diode having a p-type semiconductor layer formed on a light-emitting layer
    58.
    发明授权
    Semiconductor light-emitting diode having a p-type semiconductor layer formed on a light-emitting layer 失效
    具有形成在发光层上的p型半导体层的半导体发光二极管

    公开(公告)号：US05998810A

    公开(公告)日：1999-12-07

    申请号：US980256

    申请日：1997-11-28

    申请人： Ako Hatano ,  Yasuo Ohba ,  Hidetoshi Fujimoto ,  Kazuhiko Itaya ,  Johji Nishio

    发明人： Ako Hatano ,  Yasuo Ohba ,  Hidetoshi Fujimoto ,  Kazuhiko Itaya ,  Johji Nishio

    IPC分类号： H01S5/323 ,  H01L33/00

    CPC分类号： H01S5/32341 ,  H01S2302/00

    摘要： A semiconductor light-emitting diode exhibiting an oscillation wavelength of 450 nm or less and comprising a substrate, a lower clad layer formed on or above the substrate and mainly composed of a III-V Group compound semiconductor, an active layer formed directly on the lower clad layer and mainly composed of a III-V Group compound semiconductor, and an upper p-type clad layer formed directly on the active layer and mainly composed of a III-V Group compound semiconductor. This semiconductor light-emitting diode is characterized in that the upper p-type clad layer contains Mg, Si and at least one impurities for compensating residual donors.

    摘要翻译： 表现出450nm以下的振荡波长的半导体发光二极管，其特征在于，具有基板，形成在所述基板上或上方的下部包层，主要由III-V族化合物半导体构成，所述活性层直接形成在所述下部 主要由III-V族化合物半导体构成的上层p型覆盖层和主要由III-V族化合物半导体构成的有源层上直接形成的上部p型覆盖层。 该半导体发光二极管的特征在于，上p型覆盖层含有Mg，Si和至少一种用于补偿残留供体的杂质。

    Double-heterostructure semiconductor with mesa stripe waveguide
    60.
    发明授权
    Double-heterostructure semiconductor with mesa stripe waveguide 失效
    双异质结半导体与台面条纹波导

    公开(公告)号：US4949349A

    公开(公告)日：1990-08-14

    申请号：US279816

    申请日：1988-12-05

    申请人： Yasuo Ohba ,  Niyoko Watanabe ,  Hideto Sugawara ,  Masayuki Ishikawa ,  Yukio Watanabe ,  Motoyuki Yamamoto

    发明人： Yasuo Ohba ,  Niyoko Watanabe ,  Hideto Sugawara ,  Masayuki Ishikawa ,  Yukio Watanabe ,  Motoyuki Yamamoto

    IPC分类号： H01S5/20 ,  H01S5/223 ,  H01S5/323

    CPC分类号： H01S5/20 ,  H01S5/2231 ,  H01S5/32325

    摘要： A double-heterostructure semiconductor laser is disclosed which has a semiconductive substrate of a first conductivity type made of III-V compound semiconductor material, a first semiconductive cladding layer of the first conductivity type disposed above the substrate, an active layer made of a semiconductor film provided on said cladding layer to serve as a light emission layer, and a second semiconductive cladding layer of a second conductivity type provided on the active layer to define a light waveguide channel of the laser. The second cladding layer is made of a compound semiconductor containing indium, phosphorus, and aluminum. A contact layer section is provided on the second cladding layer to cover the light waveguide channel. The contact layer is made of a compound semiconductor material containing gallium and arsenic, and has a band gap discontinuity at a boundary region of the light waveguide channel to form a barrier which serves to effectively seal current carriers in the waveguide channel, while the laser is emitting a laser light. This contact layer may also serve as a current-blocking layer.