摘要:
A diruthenium complex such as tetra(μ-formato)diruthenium(II,II) or tetra(μ-formato)(dehydrate)diruthenium(II,II), a material for chemical vapor deposition which comprises the complex, and a method of forming a ruthenium film from the material by chemical vapor deposition.
摘要:
Disclosed is a ruthenium film-forming material having a lower melting point and a higher vapor pressure that facilitates supply of the material onto a base and moreover enables a high-quality ruthenium film to be obtained.A ruthenium film-forming material includes a compound represented by general formula (1) below (wherein R1 is independently at each occurrence a hydrogen atom, a halogen atom, a hydrocarbon group having 1 to 4 carbon atoms or a halogenated hydrocarbon group having 1 to 4 carbon atoms; R2 is independently at each occurrence a halogenated hydrocarbon group having 1 to 4 carbon atoms, an alkoxy group having 1 to 4 carbon atoms or a halogenated alkoxy group having 1 to 4 carbon atoms, with the proviso that R1 and R2 are mutually differing groups; R3 is independently at each occurrence a hydrogen atom or a hydrocarbon group having 1 to 4 carbon atoms; and L is an unsaturated hydrocarbon compound having 4 to 10 carbon atoms and having at least two double bonds).
摘要翻译:公开了一种具有较低熔点和较高蒸气压的钌膜形成材料,其有助于将材料供应到基底上,并且还能够获得高质量的钌膜。 钌膜形成材料包括由下述通式(1)表示的化合物(其中R 1在每次出现时独立地为氢原子,卤素原子,具有1至4个碳原子的烃基或卤代烃基,其具有1至 4个碳原子; R 2在每次出现时独立地为具有1至4个碳原子的卤代烃基,具有1至4个碳原子的烷氧基或具有1至4个碳原子的卤代烷氧基,条件是R 1和R 2为 相互不同的基团; R 3在每次出现时独立地为氢原子或具有1至4个碳原子的烃基; L为具有4至10个碳原子且具有至少两个双键的不饱和烃化合物)。
摘要:
A communication terminal includes: a communication unit for transmitting and receiving data to/from a second terminal and a third terminal; a memory storing a part of the transmitted and received data; and a control unit for detecting, using the communication unit, whether the second terminal is in a first state in which the second terminal can exchange first data with the communication terminal and the third terminal or in a second state in which the second terminal cannot exchange the first data with the communication terminal and the third terminal, thereby storing the first data exchanged during the second state in the memory as second data, and for transmitting the second data to the second terminal when a transition from the second state to the first state is detected.
摘要:
A communication device includes: a memory for storing first and second identification information for identifying the communication device and another communication device; a creation unit for creating a room name based on at least one of the first and second identification information; and a communication control unit for connecting to the other communication device in accordance with the second identification information, and for transmitting a creation request to a server device to create a room having the room name for allowing the communication device and the other communication device to exchange information. The communication control unit is operative in response to a first external instruction to transmit a deletion request through a communication interface to the server device to delete the room having the room name.
摘要:
A diruthenium complex such as tetra(μ-formato)diruthenium(II,II) or tetra(μ-formato)(dehydrate)diruthenium(II,II), a material for chemical vapor deposition which comprises the complex, and a method of forming a ruthenium film from the material by chemical vapor deposition.
摘要:
Various systems and methods for power management are disclosed herein. For example, a synchronous semiconductor circuit is disclosed that includes two or more clock sources and a power management controller. The power management controller is operable to apply power to one of the clock sources and to select another of the clock sources for synchronization of the circuit. Then, upon stabilization of the first clock source, it is selected by the power management controller to synchronize the circuit.
摘要:
A ruthenium compound from which high-quality film-like metal ruthenium can be obtained and a process for producing a metal ruthenium film from the ruthenium compound by chemical vapor deposition.The ruthenium compound as a material for chemical vapor deposition is represented by the following formula (1), for example
摘要:
A tool for opening split rings including first and second intersecting members pivotable at their intersection between an open position and a closed position. The first and second intersecting members include first and second handle portions and first and second jaw portions, respectively. One of the first and second jaw portions includes a first split ring opener formed integrally therewith, and one of the first and second jaw portions includes a second split ring opener attached thereto.
摘要:
A debug circuit (2) and a microcomputer incorporating the debug circuit (2). The debug circuit (2) is capable of receiving a trace event from a functional block A as long as a CPU (5) does not generate any trace event, and capable of receiving the trace event from the functional block A in synchronization with a standard clock signal CLK used in the CPU (5) when the reception of the trace event from the functional block A is permitted.