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公开(公告)号：US20090162547A1
公开(公告)日：2009-06-25
申请号：US12086520
申请日：2006-12-15
CPC分类号： B05D1/005 , B05C11/06 , B05C11/08 , B05D3/0406 , B05D3/0486 , B05D2203/30 , B05D2203/35 , G03F7/162 , H01L21/67017 , H01L21/67023 , H01L21/6715
摘要： The invention is a coating apparatus including: a substrate-holding part that holds a substrate horizontally; a chemical nozzle that supplies a chemical to a central portion of the substrate horizontally held by the substrate-holding part; a rotation mechanism that causes the substrate-holding part to rotate in order to spread out the chemical on a surface of the substrate by a centrifugal force, for coating the whole surface with the chemical; a gas-flow-forming unit that forms a down flow of an atmospheric gas on the surface of the substrate horizontally held by the substrate-holding part; a gas-discharging unit that discharges an atmosphere around the substrate; and a gas nozzle that supplies a laminar-flow-forming gas to the surface of the substrate, the laminar-flow-forming gas having a coefficient of kinematic viscosity larger than that of the atmospheric gas; wherein the atmospheric gas or the laminar-flow-forming gas are supplied to the central portion of the substrate.
摘要翻译： 本发明是一种涂覆装置，包括：水平保持基板的基板保持部; 化学喷嘴，其向由所述基板保持部水平保持的所述基板的中央部供给化学品; 旋转机构，其使基板保持部旋转以通过离心力在基板的表面上分散化学品，以用化学品涂布整个表面; 气体流动形成单元，其在由所述基板保持部水平保持的所述基板的表面上形成气氛气体的向下流动; 气体排出单元，其排出基板周围的气氛; 以及气体喷嘴，其向所述基板的表面供给层流形成气体，所述层流形成气体的运动粘度系数大于所述气氛气体的系数; 其中所述大气气体或层流形成气体被供应到所述基板的中心部分。
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公开(公告)号：US20080226826A1
公开(公告)日：2008-09-18
申请号：US12091197
申请日：2007-06-22
申请人： Takashi Tanaka , Kenichi Hara , Mitsuaki Iwashita
发明人： Takashi Tanaka , Kenichi Hara , Mitsuaki Iwashita
CPC分类号： H01L21/76849 , C23C18/1689 , C23C18/1834 , C23C18/50 , H01L21/288 , H01L21/67051 , H01L21/6723 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A substrate processing method includes applying electroless plating of CoWB onto a Cu interconnection line formed on a wafer W, and then performing a post-cleaning process by use of a cleaning liquid on the target substrate or wafer before a by-product is precipitated on the surface of the CoWB film formed by the electroless plating to cover the Cu interconnection line.
摘要翻译： 基板处理方法包括将CoWB的无电镀施加到形成在晶片W上的Cu互连线上，然后在副产物沉淀在靶基板或晶片上之后，通过使用目标基板或晶片上的清洗液进行后清洗处理 通过无电镀形成的CoWB膜的表面覆盖Cu互连线。
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53.发明申请SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING SYSTEM, AND STORAGE MEDIUM 审中-公开基板处理方法，基板处理系统和存储介质公开(公告)号：US20080199617A1
公开(公告)日：2008-08-21
申请号：US12031101
申请日：2008-02-14
CPC分类号： H01L21/6715 , H01L21/6708
摘要： In the present invention, a resist pattern size shrink liquid is applied onto a resist pattern of the substrate. The substrate is then heated, whereby a lower layer portion of the resist pattern size shrink liquid in contact with the front surface of the resist pattern is changed in quality to insoluble to pure water. An upper layer portion of the resist pattern size shrink liquid is then removed with the removing solution. In this removing step, a solution film of pure water is first formed on the substrate with the substrate at rest to dissolve the upper layer portion of the resist pattern size shrink liquid by the solution film of pure water. Pure water is then supplied to the substrate with the substrate being rotated to remove the upper layer portion of the resist pattern size shrink liquid from a top of the substrate. The substrate is then rotated to be dried.
摘要翻译： 在本发明中，将抗蚀剂图案尺寸的收缩液施加到基板的抗蚀剂图案上。 然后加热基板，由此抗蚀剂图案尺寸收缩液体的下层部分与抗蚀剂图案的前表面接触的质量被改变为不溶于纯水。 然后用去除溶液除去抗蚀剂图案尺寸的收缩液的上层部分。 在该除去工序中，首先在基板上形成纯水溶液膜，使基板静置，以通过纯水的溶液膜溶解抗蚀图案尺寸的收缩液的上层部分。 然后将纯水提供给基板，旋转基板以从基板的顶部除去抗蚀剂图案尺寸收缩液体的上层部分。 然后将基底旋转以干燥。
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公开(公告)号：US09725810B2
公开(公告)日：2017-08-08
申请号：US14129743
申请日：2012-06-20
IPC分类号： C23C18/16
CPC分类号： C23C18/1689 , C23C18/1619 , C23C18/1669 , C23C18/1675 , C23C18/1676
摘要： A liquid displacement is performed by supplying a plating liquid onto a substrate 2 while rotating the substrate 2 at a first rotational speed in a state that a pre-treatment liquid remains on a surface of the substrate 2 (liquid displacement process (block S305)). Then, an initial film is formed on the substrate 2 by stopping the rotation of the substrate 2 or by rotating the substrate 2 at a second rotational speed while continuously supplying the plating liquid onto the substrate 2 (incubation process (block S306)). Thereafter, a plating film is grown by rotating the substrate 2 at a third rotational speed while continuously supplying the plating liquid onto the substrate 2 (plating film growing process (block S307)). Here, the first rotational speed is higher than the third rotational speed, and the third rotational speed is higher than the second rotational speed.
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公开(公告)号：US09505019B2
公开(公告)日：2016-11-29
申请号：US14129623
申请日：2012-06-04
CPC分类号： B05C5/001 , B05D1/02 , C23C18/1619 , C23C18/1669 , C23C18/1676 , C23C18/168
摘要： A plating apparatus of performing a plating process by supplying a plating liquid onto a substrate includes a substrate holding/rotating device configured to hold and rotate the substrate; a discharging device configured to discharge the plating liquid toward the substrate; a plating liquid supplying device configured to supply the plating liquid to the discharging device; and a controller configured to control the discharging device and the plating liquid supplying device. Further, the discharging device includes a first nozzle having a discharge opening, and a second nozzle having a discharge opening configured to be positioned closer to a central portion of the substrate than the discharge opening of the first nozzle. Furthermore, the plating liquid supplying device is configured to set a temperature of the plating liquid supplied to the first nozzle to be higher than a temperature of the plating liquid supplied to the second nozzle.
摘要翻译： 通过将电镀液体供给到基板上进行电镀处理的电镀装置包括：基板保持旋转装置，其构造成保持和旋转基板; 排出装置，被配置为将所述电镀液体朝向所述基板排出; 电镀液供给装置，其配置为将电镀液体供给到排出装置; 以及控制器，其被配置为控制所述排出装置和所述电镀液供给装置。 此外，排出装置包括具有排出口的第一喷嘴和具有排出口的第二喷嘴，其被配置为比第一喷嘴的排出口更靠近基板的中心部。 此外，电镀液供给装置被配置为将供给到第一喷嘴的电镀液的温度设定为高于供给到第二喷嘴的电镀液的温度。
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56.发明授权Substrate processing apparatus, substrate processing method, and storage medium 有权基板处理装置，基板处理方法和存储介质公开(公告)号：US09236280B2
公开(公告)日：2016-01-12
申请号：US13301936
申请日：2011-11-22
CPC分类号： H01L21/67051 , B08B3/04 , H01L21/02101 , H01L21/67017 , H01L21/6719
摘要： Disclosed is a substrate processing apparatus including a processing vessel in which a target substrate W is processed by using a high-pressure fluid in a supercritical state or a subcritical state, and pipes that are divided into a first pipe member and a second pipe member in a flowing direction of the fluid and circulate the fluid are connected to processing vessel. A connecting/disconnecting mechanism moves at least one of first and second pipe members between a connection position and a separation position of first pipe member and the second pipe member, and opening/closing valves are installed in each of first and second pipe members and are closed at the time of separating pipe members.
摘要翻译： 公开了一种基板处理装置，其包括处理容器，其中通过使用超临界状态或亚临界状态的高压流体处理目标基板W，以及分割成第一管构件和第二管构件的管 流体的流动方向和流体循环连接到处理容器。 连接/断开机构将第一和第二管件中的至少一个移动到第一管件和第二管件之间的连接位置和分离位置之间，并且开/关阀安装在第一和第二管件中的每一个中，并且 在分离管件时关闭。
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公开(公告)号：US08999432B2
公开(公告)日：2015-04-07
申请号：US12405468
申请日：2009-03-17
申请人： Takashi Tanaka , Yusuke Saito , Mitsuaki Iwashita
发明人： Takashi Tanaka , Yusuke Saito , Mitsuaki Iwashita
CPC分类号： C23C18/1628 , C23C18/1632 , C23C18/1678 , C23C18/1682 , C23C18/31 , C23C18/38
摘要： A cap metal forming method capable of obtaining a uniform film thickness on the entire surface of a substrate is provided. A method for forming a cap metal on a processing surface of a substrate provided with two or more regions having different water-repellent properties, includes: holding the substrate horizontally by a rotatable holding mechanism installed in an inner chamber; supplying a gas between the inner chamber and an outer chamber covering the inner chamber via a gas supply hole provided in a top surface of the outer chamber; forming a pressure gradient between the inner chamber and the outer chamber; and supplying a plating solution to a preset position on the processing surface of the substrate after a pressure of the gas inside the inner chamber reaches a preset value so as to form the cap metal on at least one of the regions.
摘要翻译： 提供能够在基板的整个表面上获得均匀的膜厚度的盖金属成形方法。 一种在具有不同斥水性的两个以上的区域的基板的加工面上形成盖金属的方法，其特征在于，包括：通过安装在内室中的旋转保持机构水平地保持基板; 通过设置在所述外室的上表面中的气体供给孔，在所述内室和覆盖所述内室的外室之间供给气体; 在所述内室和所述外室之间形成压力梯度; 以及在所述内室中的气体的压力达到预设值之后，将所述电镀溶液供应到所述基板的处理表面上的预定位置，以便在所述至少一个所述区域上形成所述盖金属。
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公开(公告)号：US20130302525A1
公开(公告)日：2013-11-14
申请号：US13981124
申请日：2012-01-13
CPC分类号： B05C5/001 , B05D1/02 , C23C18/1614 , C23C18/1619 , C23C18/1676 , C23C18/168 , C25D17/001 , G03F7/162 , H01L21/288 , H01L21/67017
摘要： A plating apparatus includes a substrate holding/rotating device that holds/rotates a substrate; and a plating liquid supplying device that supplies a plating liquid onto the substrate. The plating liquid supplying device includes a supply tank that stores the plating liquid; a discharge nozzle that discharges the plating liquid onto the substrate; and a plating liquid supplying line through which the plating liquid of the supply tank is supplied into the discharge nozzle. Further, a first heating device is provided at either one of the supply tank and the plating liquid supplying line of the plating liquid supplying device, and heats the plating liquid to a first temperature. Furthermore, a second heating device is provided at the plating liquid supplying line between the first heating device and the discharge nozzle, and heats the plating liquid to a second temperature equal to or higher than the first temperature.
摘要翻译： 电镀装置包括：保持/旋转基板的基板保持/旋转装置; 以及将电镀液体供给到基板上的电镀液供给装置。 电镀液供给装置包括：储存电镀液的供给槽; 排出喷嘴，其将所述电镀液体排出到所述基板上; 以及电镀液体供给管路，供给槽的镀液通过该供给线供给到排出喷嘴。 此外，第一加热装置设置在电镀液供给装置的供给罐和电镀液供给管线中的任一个处，并将电镀液加热至第一温度。 此外，在第一加热装置和排出喷嘴之间的电镀液供给管线处设置第二加热装置，并将镀液加热到等于或高于第一温度的第二温度。
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公开(公告)号：US08383522B2
公开(公告)日：2013-02-26
申请号：US13154728
申请日：2011-06-07
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： G03F7/405 , G03F7/0035 , H01L21/02164 , H01L21/0228 , H01L21/0271 , H01L21/0337 , H01L21/31144 , H01L21/32139
摘要： There is provided a micro pattern forming method including forming a thin film on a substrate; forming a film serving as a mask when processing the thin film; processing the film serving as a mask into a pattern including lines having a preset pitch; trimming the pattern including the lines; and forming an oxide film on the pattern including the lines and on the thin film by alternately supplying a source gas and an activated oxygen species. Here, the process of trimming the pattern and the process of forming an oxide film are consecutively performed in a film forming apparatus configured to form the oxide film.
摘要翻译： 提供了一种微图案形成方法，包括在基板上形成薄膜; 在加工薄膜时形成用作掩模的膜; 将作为掩模的胶片处理成包括具有预设间距的线的图案; 修剪包括线条的图案; 并且通过交替地供给源气体和活性氧物质，在包括线条的图案和薄膜上形成氧化膜。 这里，在构成为形成氧化膜的成膜装置中连续进行修整图案的修整和形成氧化膜的工序。
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公开(公告)号：US08062955B2
公开(公告)日：2011-11-22
申请号：US12091131
申请日：2007-06-22
申请人： Takashi Tanaka , Kenichi Hara , Mitsuaki Iwashita
发明人： Takashi Tanaka , Kenichi Hara , Mitsuaki Iwashita
IPC分类号： H01L21/76
CPC分类号： H01L21/76849 , C23C18/1689 , C23C18/1834 , C23C18/50 , H01L21/288 , H01L21/67051 , H01L21/6723 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A CoWB film is formed as a cap metal on a Cu interconnection line formed on a substrate or wafer W, by repeating a plating step and a post-cleaning step a plurality of times. The plating step is arranged to apply electroless plating containing CoWB onto the Cu interconnection line. The post-cleaning step is arranged to clean the wafer W by use of a cleaning liquid, after the plating step.
摘要翻译： 通过重复电镀步骤和后清洗步骤多次，在形成在基板或晶片W上的Cu互连线上形成CoWB膜作为帽金属。 电镀步骤被布置成将含有CoWB的无电镀施加到Cu互连线上。 后清洗步骤被布置成在电镀步骤之后通过使用清洁液体清洁晶片W.
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