Monitor for particle injector
    55.
    发明授权
    Monitor for particle injector 有权
    监测颗粒注射器

    公开(公告)号:US09400174B2

    公开(公告)日:2016-07-26

    申请号:US14246912

    申请日:2014-04-07

    Abstract: Approaches for determining the delivery success of a particle, such as a drug particle, are disclosed. A system for monitoring delivery of particles to biological tissue includes a volume, an optical component, a detector, and an analyzer. The volume comprises a space through which a particle can pass in a desired direction. The optical component is configured to provide a measurement light. The detector is positioned to detect light emanating from the particle in response to the measurement light. The detected light is modulated as the particle moves along a detection axis. The detector is configured to generate a time-varying signal in response to the detected light. The analyzer is configured to receive the time-varying signal and determine a delivery success of the particle into a biological tissue based upon characteristics of the time-varying signal.

    Abstract translation: 公开了确定颗粒如药物颗粒的递送成功的方法。 用于监测颗粒递送到生物组织的系统包括体积,光学部件,检测器和分析器。 该体积包括颗粒可以通过其沿所需方向通过的空间。 光学部件被配置成提供测量光。 检测器被定位成响应于测量光来检测从颗粒发出的光。 随着粒子沿着检测轴移动,被检测的光被调制。 检测器被配置为响应于检测到的光而产生时变信号。 分析器被配置为接收时变信号,并且基于时变信号的特性来确定颗粒进入生物组织的递送成功。

    Structure For Electron-Beam Pumped Edge-Emitting Device and Methods for Producing Same
    56.
    发明申请
    Structure For Electron-Beam Pumped Edge-Emitting Device and Methods for Producing Same 有权
    电子束泵浦边缘发射装置的结构及其制作方法

    公开(公告)号:US20140369367A1

    公开(公告)日:2014-12-18

    申请号:US13920248

    申请日:2013-06-18

    Abstract: A semiconductor light emitting device includes a light guiding structure, a light emitting layer disposed within the light guiding structure, and a structure for discharging excess electric charge within the device. The device may be excited by an electron beam, as opposed to an optical beam, to create electron-hole pairs. The light emitting layer is configured for light generation without requiring a p-n junction, and is therefore not embedded within nor part of a p-n junction. Doping with p-type species is obviated, reducing device loss and permitting operation at a short wavelengths, such as below 300 nm. Various structures, such as a top-side cladding layer, are disclosed for discharging beam-induced charge. A single device may be operated with multiple electron beam pumps, either to enable a relatively thick active layer or to drive multiple separate active layers. Cooperatively curved end facets accommodate for possible off-axis resonance within the active region(s).

    Abstract translation: 半导体发光器件包括导光结构,设置在导光结构内的发光层,以及用于在器件内放电多余电荷的结构。 与光束相反,器件可能被电子束激发,以产生电子 - 空穴对。 发光层被配置用于光生成而不需要p-n结,并且因此不嵌入在p-n结的内部或部分内。 消除p型物质的掺杂,减少器件损耗并允许在短波长(如300nm以下)下进行工作。 公开了诸如顶侧包覆层的各种结构,用于放电束诱导的电荷。 单个设备可以用多个电子束泵操作,以使得能够相对较厚的有源层或驱动多个分离的有源层。 合作弯曲的端面适合有源区域内的可能的离轴共振。

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