Abstract:
A nitride heterojunction bipolar transistor with one or more polarization-assisted alloy hole-doped short-period superlattice layers are described herein. The transistor may comprise a substrate, a sub-collector region coupled to the substrate, a collector region coupled to the sub-collector portion, a base portion region to the collector portion, and a short-period superlattice (SPSL) emitter region coupled to the base portion. The SPSL emitter includes a plurality of first emitter layers and a plurality of second emitter layers that are alternating layers that form the SPSL emitter. The first emitter layers have a lower bandgap than the second emitter layers, and the vertical transport through the SPSL emitter region occurs via quantum tunneling. Other embodiments are also described.
Abstract:
A vertical external cavity surface emitting laser (VECSEL) structure includes a heterostructure and first and second reflectors. The heterostructure comprises an active region having one or more quantum well structures configured to emit radiation at a wavelength, λlase, in response to pumping by an electron beam. One or more layers of the heterostructure may be doped. The active region is disposed between the first reflector and the second reflector and is spaced apart from the first reflector by an external cavity. An electron beam source is configured to generate the electron beam directed toward the active region. At least one electrical contact is electrically coupled to the heterostructure and is configured to provide a current path between the heterostructure and ground.
Abstract:
A vertical external cavity surface emitting laser (VECSEL) structure includes a heterostructure and first and second reflectors. The heterostructure comprises an active region having one or more quantum well structures configured to emit radiation at a wavelength, λlase, in response to pumping by an electron beam. One or more layers of the heterostructure may be doped. The active region is disposed between the first reflector and the second reflector and is spaced apart from the first reflector by an external cavity. An electron beam source is configured to generate the electron beam directed toward the active region. At least one electrical contact is electrically coupled to the heterostructure and is configured to provide a current path between the heterostructure and ground.
Abstract:
A method and system for using spatially modulated excitation/emission and relative movement between a particle (cell, molecule, aerosol, . . . ) and an excitation/emission pattern are provided. In at least one form, an interference pattern of the excitation light with submicron periodicity perpendicular to the particle flow is used. As the particle moves along the pattern, emission is modulated according to the speed of the particle and the periodicity of the stripe pattern. A single detector, which records the emission over a couple of stripes, can be used. The signal is recorded with a fast detector read-out in order to capture the “blinking” of the particles while they are moving through the excitation pattern. This concept enables light detection with high signal-to-noise ratio and high spatial resolution without the need of expensive and bulky optics.
Abstract:
Approaches for determining the delivery success of a particle, such as a drug particle, are disclosed. A system for monitoring delivery of particles to biological tissue includes a volume, an optical component, a detector, and an analyzer. The volume comprises a space through which a particle can pass in a desired direction. The optical component is configured to provide a measurement light. The detector is positioned to detect light emanating from the particle in response to the measurement light. The detected light is modulated as the particle moves along a detection axis. The detector is configured to generate a time-varying signal in response to the detected light. The analyzer is configured to receive the time-varying signal and determine a delivery success of the particle into a biological tissue based upon characteristics of the time-varying signal.
Abstract:
A semiconductor light emitting device includes a light guiding structure, a light emitting layer disposed within the light guiding structure, and a structure for discharging excess electric charge within the device. The device may be excited by an electron beam, as opposed to an optical beam, to create electron-hole pairs. The light emitting layer is configured for light generation without requiring a p-n junction, and is therefore not embedded within nor part of a p-n junction. Doping with p-type species is obviated, reducing device loss and permitting operation at a short wavelengths, such as below 300 nm. Various structures, such as a top-side cladding layer, are disclosed for discharging beam-induced charge. A single device may be operated with multiple electron beam pumps, either to enable a relatively thick active layer or to drive multiple separate active layers. Cooperatively curved end facets accommodate for possible off-axis resonance within the active region(s).