公开(公告)号：US11545578B2

公开(公告)日：2023-01-03

申请号：US17047710

申请日：2019-04-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yasumasa Yamane ,  Takashi Hirose ,  Teruyuki Fujii ,  Hajime Kimura ,  Daigo Shimada

IPC: H01L27/00 ,  H01L29/00 ,  H01L29/786 ,  H01L29/24 ,  H01L29/51 ,  H01L21/00

Abstract: A semiconductor device with high reliability is provided. The semiconductor device includes a first insulator, a second insulator, and a transistor; the transistor includes an oxide in a channel formation region; the oxide is surrounded by the first insulator; and the first insulator is surrounded by the second insulator. The first insulator includes a region with a lower hydrogen concentration than the second insulator. Alternatively, the first insulator includes a region with a lower hydrogen concentration than the second insulator and with a lower nitrogen concentration than the second insulator.

公开(公告)号：US11532755B2

公开(公告)日：2022-12-20

申请号：US17120774

申请日：2020-12-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Akihisa Shimomura ,  Junichi Koezuka ,  Kenichi Okazaki ,  Yasumasa Yamane ,  Yuhei Sato ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/04 ,  H01L29/24 ,  C23C14/08 ,  C23C14/34 ,  H01L21/02

Abstract: To provide a novel oxide semiconductor film. The oxide semiconductor film includes In, M, and Zn. The M is Al, Ga, Y, or Sn. In the case where the proportion of In in the oxide semiconductor film is 4, the proportion of M is greater than or equal to 1.5 and less than or equal 2.5 and the proportion of Zn is greater than or equal to 2 and less than or equal to 4.

公开(公告)号：US10050132B2

公开(公告)日：2018-08-14

申请号：US15664106

申请日：2017-07-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Akihisa Shimomura ,  Yasumasa Yamane ,  Yuhei Sato ,  Tetsuhiro Tanaka ,  Masashi Tsubuku ,  Toshihiko Takeuchi ,  Ryo Tokumaru ,  Mitsuhiro Ichijo ,  Satoshi Toriumi ,  Takashi Ohtsuki ,  Toshiya Endo

IPC: H01L21/00 ,  H01L29/66 ,  H01L21/02 ,  H01L29/786

Abstract: A change in electrical characteristics is suppressed and reliability in a semiconductor device using a transistor including an oxide semiconductor is improved. One feature resides in forming an oxide semiconductor film over an oxygen-introduced insulating film, and then forming the source and drain electrodes with an antioxidant film thereunder. Here, in the antioxidant film, the width of a region overlapping with the source and drain electrodes is longer than the width of a region not overlapping with them. The transistor formed as such has less defects in the channel region, which will improve reliability of the semiconductor device.

公开(公告)号：US10032888B2

公开(公告)日：2018-07-24

申请号：US14829029

申请日：2015-08-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tetsuhiro Tanaka ,  Ryo Tokumaru ,  Yasumasa Yamane ,  Akihisa Shimomura ,  Naoki Okuno

IPC: H01L29/10 ,  H01L29/66 ,  H01L29/423 ,  H01L29/786 ,  H01L29/45 ,  H01L29/49

Abstract: To provide a semiconductor device including an oxide semiconductor layer with high and stable electrical characteristics, the semiconductor device is manufactured by forming a first insulating layer, forming oxide over the first insulating layer and then removing the oxide n times (n is a natural number), forming an oxide semiconductor layer over the first insulating layer, forming a second insulating layer over the oxide semiconductor layer, and forming a conductive layer over the second insulating layer. Alternatively, the semiconductor device is manufactured by forming the oxide semiconductor layer over the first insulating layer, forming the second insulating layer over the oxide semiconductor layer, forming the oxide over the second insulating layer and then removing the oxide n times (n is a natural number), and forming the conductive layer over the second insulating layer.

公开(公告)号：US09882059B2

公开(公告)日：2018-01-30

申请号：US14571981

申请日：2014-12-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Akihisa Shimomura ,  Yuhei Sato ,  Yasumasa Yamane ,  Yoshitaka Yamamoto ,  Hideomi Suzawa ,  Tetsuhiro Tanaka ,  Yutaka Okazaki ,  Naoki Okuno ,  Takahisa Ishiyama

IPC: H01L29/786 ,  H01L29/417

CPC classification number: H01L29/7869 ,  H01L29/41733 ,  H01L29/78606 ,  H01L29/78696

Abstract: To provide a transistor having a high on-state current. A semiconductor device includes a first insulator containing excess oxygen, a first oxide semiconductor over the first insulator, a second oxide semiconductor over the first oxide semiconductor, a first conductor and a second conductor which are over the second oxide semiconductor and are separated from each other, a third oxide semiconductor in contact with side surfaces of the first oxide semiconductor, a top surface and side surfaces of the second oxide semiconductor, a top surface of the first conductor, and a top surface of the second conductor, a second insulator over the third oxide semiconductor, and a third conductor facing a top surface and side surfaces of the second oxide semiconductor with the second insulator and the third oxide semiconductor therebetween. The first oxide semiconductor has a higher oxygen-transmitting property than the third oxide semiconductor.

公开(公告)号：US09831326B2

公开(公告)日：2017-11-28

申请号：US15350213

申请日：2016-11-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Tetsuhiro Tanaka ,  Masayuki Sakakura ,  Ryo Tokumaru ,  Yasumasa Yamane ,  Yuhei Sato

IPC: H01L21/02 ,  H01L21/441 ,  H01L21/465 ,  H01L21/477 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L29/66969 ,  H01L21/02255 ,  H01L21/02565 ,  H01L21/441 ,  H01L21/465 ,  H01L21/477 ,  H01L21/8258 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/1156 ,  H01L29/401 ,  H01L29/786 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A method for manufacturing a semiconductor device includes the steps of forming a first insulating film over a first gate electrode over a substrate while heated at a temperature higher than or equal to 450° C. and lower than the strain point of the substrate, forming a first oxide semiconductor film over the first insulating film, adding oxygen to the first oxide semiconductor film and then forming a second oxide semiconductor film over the first oxide semiconductor film, and performing heat treatment so that part of oxygen contained in the first oxide semiconductor film is transferred to the second oxide semiconductor film.

公开(公告)号：US09825179B2

公开(公告)日：2017-11-21

申请号：US15244041

申请日：2016-08-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masashi Tsubuku ,  Masashi Oota ,  Akihisa Shimomura ,  Yasumasa Yamane

IPC: H01L29/786 ,  H01L29/06 ,  H01L29/24 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78696

Abstract: A novel oxide semiconductor is provided. An oxide semiconductor contains In, an element M (M represents Al, Ga, Y, or Sn), and Zn. The oxide semiconductor has little characteristics variation and structure change and has high electron mobility in the case where the atomic ratio of In to M and Zn in the oxide semiconductor ranges from 4:2:3 to 4:2:4.1 or is a neighborhood thereof.

公开(公告)号：US09698274B2

公开(公告)日：2017-07-04

申请号：US14883971

申请日：2015-10-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Akihisa Shimomura ,  Yasumasa Yamane ,  Naoto Yamade ,  Tetsuhiro Tanaka

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/417 ,  H01L29/45 ,  H01L29/49 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/78696

Abstract: A transistor with stable electrical characteristics or a transistor with normally-off electrical characteristics. The transistor is a semiconductor device including a conductor, a semiconductor, a first insulator, and a second insulator. The semiconductor is over the first insulator. The conductor is over the semiconductor. The second insulator is between the conductor and the semiconductor. The first insulator includes fluorine and hydrogen. The fluorine concentration of the first insulator is higher than the hydrogen concentration of the first insulator.

公开(公告)号：US09685563B2

公开(公告)日：2017-06-20

申请号：US15159873

申请日：2016-05-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masashi Tsubuku ,  Toshihiko Takeuchi ,  Yasumasa Yamane ,  Masashi Oota

IPC: H01L27/14 ,  H01L29/786 ,  H01L29/66 ,  H01L29/04 ,  H01L29/10 ,  H01L21/02 ,  H01L21/477 ,  H01L29/417 ,  H01L29/423

CPC classification number: H01L29/7869 ,  H01L21/02483 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/477 ,  H01L21/84 ,  H01L27/1207 ,  H01L27/1225 ,  H01L27/1248 ,  H01L29/045 ,  H01L29/1033 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78621 ,  H01L29/78696

Abstract: A semiconductor device includes a first oxide semiconductor film, a second oxide semiconductor film over the first oxide semiconductor film, a source electrode in contact with the second oxide semiconductor film, a drain electrode in contact with the second oxide semiconductor film, a metal oxide film over the second oxide semiconductor film, the source electrode, and the drain electrode, a gate insulating film over the metal oxide film, and a gate electrode over the gate insulating film. The metal oxide film contains M (M represents Ti, Ga, Y, Zr, La, Ce, Nd, or Hf) and Zn. The metal oxide film includes a portion where x/(x+y) is greater than 0.67 and less than or equal to 0.99 when a target has an atomic ratio of M:Zn=x:y.

公开(公告)号：US09666697B2

公开(公告)日：2017-05-30

申请号：US14313145

申请日：2014-06-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tetsuhiro Tanaka ,  Toshihiko Takeuchi ,  Yasumasa Yamane ,  Takayuki Inoue ,  Shunpei Yamazaki

IPC: H01L29/49 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L29/66969 ,  H01L29/4908 ,  H01L29/7869 ,  H01L29/78696

Abstract: A manufacturing method of a semiconductor device in which the threshold voltage is adjusted is provided. The semiconductor device includes a first semiconductor, an electrode electrically connected to the first semiconductor, a gate electrode, and an electron trap layer between the gate electrode and the first semiconductor. By performing heat treatment at higher than or equal to 125° C. and lower than or equal to 450° C. and, at the same time, keeping a potential of the gate electrode higher than a potential of the electrode for 1 second or more, the threshold voltage is increased.