LIGHT EMITTING DEVICE AND LED DISPLAY APPARATUS HAVING THE SAME

    公开(公告)号:US20230282797A1

    公开(公告)日:2023-09-07

    申请号:US18197729

    申请日:2023-05-16

    CPC classification number: H01L33/62 H01L27/156 H01L33/382 H01L33/40 H01L33/486

    Abstract: A light emitting device including a first light emitting stack, a second light emitting stack disposed under the first light emitting stack, a third light emitting stack disposed under the second light emitting stack, first, second, third, and fourth connection electrodes disposed over the first light emitting stack, and electrically connected to the first, second, and third light emitting stacks, and bonding metal layers disposed on upper surfaces of the first, second, third, and fourth connection electrodes, in which each of the first, second, third, and fourth connection electrodes includes a groove on an upper surface thereof, and the bonding metal layers cover the grooves of the first, second, third, and fourth connection electrodes, respectively.

    PASSIVATION COVERED LIGHT EMITTING UNIT STACK

    公开(公告)号:US20220393063A1

    公开(公告)日:2022-12-08

    申请号:US17847122

    申请日:2022-06-22

    Abstract: A light emitting chip including a light emitting structure including first, second, and third light emitting sub-units to emit light of a first color, a second color, and a third color and vertically stacked on each other, and having at least one mesa structure and at least one sidewall having a stepped structure; a plurality of vias electrically connected to the light emitting sub-units, each via has a top surface exposed from the light emitting structure and a bottom surface contacting the light emitting structure, a part of the bottom surfaces of the vias disposed on substantially the same level; and a first passivation layer covering at least a part of the light emitting structure, in which the first passivation layer has a bottom surface exposing the light emitting structure to permit light from the first, second, and third sub-units to be emitted from the light emitting chip.

    LED UNIT FOR DISPLAY AND DISPLAY APPARATUS HAVING THE SAME

    公开(公告)号:US20200066690A1

    公开(公告)日:2020-02-27

    申请号:US16673114

    申请日:2019-11-04

    Abstract: A light emitting device for a display including a plurality of pixel regions defined between at least one separation region disposed between the pixel regions, and a barrier disposed in the separation region, in which each of the pixel regions includes a first LED stack, a second LED stack disposed on the first LED stack, a third LED stack disposed on the second LED stack, and electrode pads electrically connected to the first, second, and third LED stacks, the electrode pads comprising a common electrode pad, a first electrode pad, a second electrode pad, and a third electrode pad, the common electrode pad is connected to the first, second, and third LED stacks, the first, second, and third electrode pads are connected to the first, second, and third LED stacks, respectively, and the first, second, and third LED stacks are configured to be independently driven using the electrode pads.

    LIGHT EMITTING DEVICE
    56.
    发明申请

    公开(公告)号:US20200058825A1

    公开(公告)日:2020-02-20

    申请号:US16536691

    申请日:2019-08-09

    Abstract: A light emitting device including first, second, and third light emitting parts disposed one over another and each including an n-type semiconductor layer, an active layer, a p-type semiconductor layer, a first adhesion layer disposed between the first and second light emitting parts and including first coupling patterns that are adhesive and conductive, and a second adhesion layer disposed between the second and third light emitting parts and including second coupling patterns that are adhesive and conductive, in which the third light emitting part has a mesa structure exposing a portion of the second coupling patterns of the second adhesion layer.

    HIGH-POWER LIGHT-EMITTING DIODE AND LIGHT-EMITTING MODULE HAVING THE SAME

    公开(公告)号:US20180351042A1

    公开(公告)日:2018-12-06

    申请号:US16100783

    申请日:2018-08-10

    Abstract: A light-emitting diode includes: a gallium nitride substrate; a first semiconductor layer disposed thereon; a mesa including a second semiconductor layer disposed on the first semiconductor layer and an intervening active layer; a first contact layer including an outer contact part in contact with the first semiconductor layer near an edge of the substrate and an inner contact part in contact with the first semiconductor layer within a region encompassed by the outer contact part; a second contact layer disposed on the mesa in contact with the second semiconductor layer; an upper insulation layer having first and second opening parts overlapping the first and second contact layers; and first and second electrode pads electrically connected to the first and second contact layers through the first and second opening parts, wherein the LED can be driven at 150 A/cm2 or more and has a maximum junction temperature of 180° C. or more.

    LIGHT EMITTING DEVICE
    59.
    发明申请
    LIGHT EMITTING DEVICE 审中-公开
    发光装置

    公开(公告)号:US20160365486A1

    公开(公告)日:2016-12-15

    申请号:US15244744

    申请日:2016-08-23

    Abstract: A light emitting device includes a light emitting structure including a support structure including a first bulk electrode a second bulk electrode disposed on and electrically connected to the first electrode and the second electrode, respectively. A substrate is disposed adjacent to the support structure, wherein each of the first and second bulk electrodes includes an upper region and a lower region with the upper regions of the first and second bulk electrodes being separated from each other by a first distance. The substrate includes a first interconnection portion and a second interconnection portion electrically connected to the first bulk electrode and the second bulk electrode, respectively, and separated from each other by a second distance. The second distance is greater than the first distance.

    Abstract translation: 发光器件包括发光结构,其包括支撑结构,该支撑结构包括分别设置在第一电极和第二电极上并与之电连接的第一体电极和第二体电极。 衬底被布置成与支撑结构相邻,其中第一和第二体电极中的每一个包括上部区域和下部区域,其中第一和第二体电极的上部区域彼此分开第一距离。 衬底包括分别电连接到第一体电极和第二体电极的第一互连部分和第二互连部分,并且彼此分开第二距离。 第二距离大于第一距离。

    HIGH EFFICIENCY LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME
    60.
    发明申请
    HIGH EFFICIENCY LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME 审中-公开
    高效发光二极管及其制造方法

    公开(公告)号:US20150243847A1

    公开(公告)日:2015-08-27

    申请号:US14694651

    申请日:2015-04-23

    Abstract: Exemplary embodiments of the present invention relate to a high-efficiency light emitting diode (LED). The LED according to an exemplary embodiment includes a substrate, a semiconductor stack arranged on the substrate, wherein the semiconductor stack has a p-type semiconductor layer, an active layer and an n-type semiconductor layer, a first metal layer interposed between the substrate and the semiconductor stack, the first metal layer ohmic-contacted with the semiconductor stack, a first electrode pad arranged on the semiconductor stack, an electrode extension extending from the first electrode pad, wherein the electrode extension has a contact region contacting the n-type semiconductor layer, a first insulating layer interposed between the substrate and the semiconductor stack, wherein the first insulating layer covers a surface region of the p-type semiconductor layer under the contact region of the electrode extension, and a second insulating layer interposed between the first electrode pad and the semiconductor stack.

    Abstract translation: 本发明的示例性实施例涉及一种高效率发光二极管(LED)。 根据示例性实施例的LED包括衬底,布置在衬底上的半导体堆叠,其中半导体堆叠具有p型半导体层,有源层和n型半导体层,插入在衬底之间的第一金属层 半导体堆叠,与半导体堆叠欧姆接触的第一金属层,布置在半导体堆叠上的第一电极焊盘,从第一电极焊盘延伸的电极延伸部,其中电极延伸部具有接触n型 半导体层,插入在所述基板和所述半导体堆叠之间的第一绝缘层,其中所述第一绝缘层覆盖所述电极延伸部的接触区域下方的所述p型半导体层的表面区域,以及插入在所述第一绝缘层之间的第二绝缘层 电极焊盘和半导体堆叠。

Patent Agency Ranking