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    Semiconductor memory device
    52.
    发明授权
    Semiconductor memory device 有权

    公开(公告)号：US11917805B2

    公开(公告)日：2024-02-27

    申请号：US17541584

    申请日：2021-12-03

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kyunghwan Lee ,  Yongseok Kim ,  Ilgweon Kim ,  Huijung Kim ,  Sungwon Yoo ,  Minhee Cho

    IPC: H10B12/00

    CPC classification number: H10B12/00

    Abstract: A semiconductor memory device includes: a first word line extending in a vertical direction; a second word line spaced apart from the first word line in a first horizontal direction and extending in the vertical direction; a first semiconductor pattern of a ring-shaped horizontal cross-section surrounding the first word line and constituting a portion of a first cell transistor; a second semiconductor pattern of a ring-shaped horizontal cross-section surrounding the second word line and constituting a portion of a second cell transistor; a cell capacitor between the first semiconductor pattern and the second semiconductor pattern and including a first electrode, a second electrode, and a capacitor dielectric film; a first bit line opposite the cell capacitor with respect to the first semiconductor pattern and extending in a second horizontal direction; and a second bit line opposite the cell capacitor with respect to the second semiconductor pattern.

    Semiconductor memory devices
    54.
    发明授权
    Semiconductor memory devices 有权

    公开(公告)号：US11887648B2

    公开(公告)日：2024-01-30

    申请号：US17362138

    申请日：2021-06-29

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jaeho Hong ,  Hyuncheol Kim ,  Yongseok Kim ,  Ilgweon Kim ,  Hyeoungwon Seo ,  Sungwon Yoo ,  Kyunghwan Lee

    IPC: H01L29/66 ,  G11C11/39 ,  G11C11/402 ,  H01L29/749 ,  H01L27/102

    CPC classification number: G11C11/4023 ,  G11C11/39 ,  H01L27/1027 ,  H01L29/66363 ,  H01L29/749

    Abstract: A semiconductor memory device according to the present inventive concept includes: a semiconductor substrate; a common source semiconductor layer doped with impurities of a first conductivity type on the semiconductor substrate; a plurality of insulating layers and a plurality of word line structures alternately stacked on the common source semiconductor layer; and a memory cell dielectric layer penetrating the plurality of insulating layers and the plurality of word line structures and covering an internal wall of a channel hole extending in a vertical direction, and a memory cell structure filling the channel hole. The memory cell structure includes a channel layer, which has the memory cell dielectric layer thereon and fills at least a portion of the channel hole, and a drain layer covering an upper surface of the channel layer, doped with impurities of a second conductivity type, and filling some of an upper portion of the channel hole.

    3D FERROELECTRIC MEMORY DEVICES
    57.
    发明公开
    3D FERROELECTRIC MEMORY DEVICES 审中-公开

    公开(公告)号：US20230309314A1

    公开(公告)日：2023-09-28

    申请号：US18108374

    申请日：2023-02-10

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Kyunghwan LEE ,  Yongseok Kim ,  Daewon Ha

    IPC: H10B51/20 ,  H10B51/10 ,  H01L29/51 ,  H01L29/78

    CPC classification number: H10B51/20 ,  H10B51/10 ,  H01L29/516 ,  H01L29/78391

    Abstract: A three-dimensional ferroelectric random access memory (3D FeRAM) device includes: a gate electrode extending in a vertical direction on a substrate; a ferroelectric pattern and a gate insulation pattern stacked on the gate electrode in a horizontal direction to surround the gate electrode; first and second channels spaced apart from each other in the horizontal direction on an outer sidewall of the gate insulation pattern; first source/drain pattern structures spaced apart from each other in the vertical direction on an outer sidewall of the first channel; and second source/drain pattern structures spaced apart from each other in the vertical direction on an outer sidewall of the second channel.

    Robot cleaner
    58.
    发明授权
    Robot cleaner 有权

    公开(公告)号：US11659971B2

    公开(公告)日：2023-05-30

    申请号：US16891673

    申请日：2020-06-03

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sinae Kim ,  Yongseok Kim ,  Minro Yun ,  Yeonkyu Jeong ,  Shin Kim ,  Jaeyoul Jeong

    IPC: A47L9/28 ,  A47L9/00

    CPC classification number: A47L9/2836 ,  A47L9/009 ,  A47L9/2852 ,  A47L9/2889 ,  A47L2201/04

    Abstract: Disclosed are a robot cleaner. The robot cleaner includes: a cleaner body configured to move in an area and clean the area; and a sensor assembly provided in the cleaner body. The sensor assembly includes: a main sensor configured to be moveable between a sensing position where the main sensor protrudes out of the cleaner body and a settled position where the main sensor is inside the cleaner body; a sensor position changer configured to allow the main sensor to move between the sensing position and the settled position; and a stopper configured to restrict the sensor position changer from allowing the main sensor at the sensing position to move towards the settled position.

    SEMICONDUCTOR DEVICES INCLUDING SEMICONDUCTOR PATTERN
    59.
    发明公开
    SEMICONDUCTOR DEVICES INCLUDING SEMICONDUCTOR PATTERN 审中-公开

    公开(公告)号：US20230163132A1

    公开(公告)日：2023-05-25

    申请号：US18098174

    申请日：2023-01-18

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Hyuncheol Kim ,  Yongseok Kim ,  Huijung Kim ,  Satoru Yamada ,  Sungwon Yoo ,  Kyunghwan Lee ,  Jaeho Hong

    IPC: H01L27/102 ,  H01L29/74

    CPC classification number: H01L27/1027 ,  H01L29/742

    Abstract: A semiconductor device includes a first conductive line and a second conductive line spaced apart from the first conductive line. A semiconductor pattern is disposed between the first conductive line and the second conductive line. The semiconductor pattern includes a first semiconductor pattern having first-conductivity-type impurities disposed adjacent to the first conductive line. A second semiconductor pattern having second-conductivity-type impurities is disposed adjacent to the second conductive line. A third semiconductor pattern is disposed between the first semiconductor pattern and the second semiconductor pattern. The third semiconductor pattern includes a first region disposed adjacent to the first semiconductor pattern and a second region disposed between the first region and the second semiconductor pattern. At least one of the first region and the second region comprises an intrinsic semiconductor layer. A first gate line crosses the first region and a second gate line crosses the second region.

    SEMICONDUCTOR DEVICE
    60.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20230075559A1

    公开(公告)日：2023-03-09

    申请号：US17741219

    申请日：2022-05-10

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Hyuncheol Kim ,  Yongseok Kim ,  Dongsoo Woo ,  Kyunghwan Lee

    IPC: H01L29/78 ,  H01L29/417 ,  H01L29/10

    Abstract: A semiconductor device includes: a channel; a gate structure on the channel; a first source/drain arranged at a first end of the channel and including a metal; a first tunable band-gap layer arranged between the channel and the first source/drain and having a band gap that changes according to stress; a first electrostrictive layer between the gate structure and the first tunable band-gap layer, the first electrostrictive layer having a property of being deformed based on and upon application of an electric field; and a second source/drain at a second end of the channel.

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