Electromagnetic relay
    51.
    发明授权
    Electromagnetic relay 有权
    电磁继电器

    公开(公告)号:US07205870B2

    公开(公告)日:2007-04-17

    申请号:US10706854

    申请日:2003-11-12

    IPC分类号: H01H51/22

    CPC分类号: H01H50/642

    摘要: An electromagnetic relay having a moving contact plate and fixed contact plates juxtaposed with one another on a base. A moving iron plate is rotated during magnetization/demagnetization of a coil block put on the base to reciprocate a card in a horizontal direction. The moving contact plate is allowed to undergo elastic deformation so that a contact on the moving contact plate is brought into contact and out of contact with contacts on the fixed contact plates. The top corners of the moving contact plate is bent into an upper component and a lower components in such a fashion as to form card acceptance portions, and a distal end portion of the card is brought into contact with an inner surface of the card acceptance portions.

    摘要翻译: 一种电磁继电器,其具有在基座上彼此并置的移动接触板和固定接触板。 移动铁板在放置在基座上的线圈块的磁化/退磁期间旋转,以使卡在水平方向上往复运动。 允许移动接触板进行弹性变形,使得可动接触板上的接触与固定接触板上的触点接触并脱离接触。 可移动接触板的顶角以形成卡接收部的方式弯曲成上部部件和下部部件,并且卡的远端部分与卡片接收部分的内表面接触 。

    Shift control apparatus and method for continuously variable transmission
    53.
    发明申请
    Shift control apparatus and method for continuously variable transmission 有权
    用于无级变速器的换档控制装置和方法

    公开(公告)号:US20060063641A1

    公开(公告)日:2006-03-23

    申请号:US11230520

    申请日:2005-09-21

    IPC分类号: F16H61/662

    摘要: The shift control apparatus for a continuously-variable transmission includes; a primary pulley; a secondary pulley connected with the primary pulley by a belt; a shift actuator adapted to vary a speed ratio; a line pressure adjusting section configured to adjust a line pressure; a secondary-pressure adjusting section configured to adjust a secondary pressure; and a control section configured to control the shift actuator, the line pressure adjusting section, and the secondary-pressure adjusting section. Moreover, the control section includes a fail determining section configured to determine whether the shift actuator is under a failed condition. The control section is configured to carry out a fail-safe shift-actuator fixing control to fix the shift actuator, when the fail determining section determines that the shift actuator is under the failed condition, and is configured to carry out a fail-safe hydraulic control to bring the line pressure to its upper limit pressure and bring the secondary pressure to its maximum pressure, when a control-start criterion predetermined to secure driving performance of the vehicle is satisfied under the failed condition.

    摘要翻译: 用于无级变速器的变速控制装置包括: 主滑轮; 通过带与主带轮连接的次级带轮; 换档致动器,适于改变速比; 管路压力调节部,其构造成调整管路压力; 被配置为调节二次压力的二次压力调节部; 以及控制部,被配置为控制所述换档致动器,所述管路压力调节部和所述二次压力调节部。 此外,控制部分包括:故障确定部分,被配置为确定换档致动器是否处于故障状态。 所述控制部构成为,在所述故障判定部判断为所述变速执行机构处于故障状态的情况下,执行故障保护换挡致动器固定控制以固定所述换档致动器,并且构成为进行故障保护液压 控制使线路压力达到其上限压力,并且在故障状态下满足为确保车辆的驾驶性能而确定的控制开始准则时,使二次压力达到其最大压力。

    Electromagnetic relay
    55.
    发明授权
    Electromagnetic relay 有权
    电磁继电器

    公开(公告)号:US06879229B2

    公开(公告)日:2005-04-12

    申请号:US10843212

    申请日:2004-05-11

    摘要: The invention provides an electromagnetic relay excellent in insulating property and high in opening and closing characteristics and productivity.Therefore, a pair of pedestal portions for coil terminals are arranged in the outer circumferential edge portion of the lower flange portion of a spool. A coil drawing-out groove continuously connected to the upper face of the above pedestal portion for a coil terminal is formed along the outer circumferential edge portion of the above lower flange portion. A storing concave portion able to store a shading coil attached to a magnetic pole portion of an iron core projected from a central hole of the above spool is formed on the lower face of the above lower flange portion.

    摘要翻译: 本发明提供绝缘性好,开闭特性和生产率高的电磁继电器。因此,在线轴的下凸缘部的外周缘部配置一对线圈端子用的基座部。 沿着上述下凸缘部的外周缘部形成有与线圈端子的上述基座部的上表面连续地连接的线圈拉出槽。 在上述下凸缘部的下表面上形成有能够存储从上述卷轴的中心孔突出的铁芯的磁极部附着的遮光线圈的存放凹部。

    Semiconductor memory device and manufacturing method thereof
    57.
    发明授权
    Semiconductor memory device and manufacturing method thereof 有权
    半导体存储器件及其制造方法

    公开(公告)号:US08659070B2

    公开(公告)日:2014-02-25

    申请号:US12561451

    申请日:2009-09-17

    IPC分类号: H01L29/792

    摘要: The semiconductor memory device of the present invention includes a plurality of memory strings having a plurality of electrically reprogrammable memory cells connected in series, the memory strings having a column shaped semiconductor, a first insulation film formed around the column shaped semiconductor, a charge accumulation layer formed around the first insulation film, a second insulation film formed around the charge accumulation film and a plurality of electrodes formed around the second insulation film, a bit line connected to one end of the memory strings via a plurality of selection transistors, and a conducting layer extending in two dimensions and in which the plurality of electrodes of the memory strings and the plurality of electrodes of different memory strings are shared respectively, wherein each end part of the conducting layer is formed in step shapes in a direction parallel with the bit line.

    摘要翻译: 本发明的半导体存储器件包括具有串联连接的多个电可再编程存储器单元的多个存储器串,具有列形半导体的存储器串,形成在柱状半导体周围的第一绝缘膜,电荷累积层 形成在第一绝缘膜周围,形成在电荷累积膜周围的第二绝缘膜和围绕第二绝缘膜形成的多个电极,经由多个选择晶体管连接到存储器串的一端的位线,以及导电 分别在存储器串的多个电极和不同的存储器串的多个电极中分别共享,其中导电层的每个端部在平行于位线的方向上形成为台阶形状 。

    ELECTROMAGNETIC RELAY
    58.
    发明申请
    ELECTROMAGNETIC RELAY 有权
    电磁继电器

    公开(公告)号:US20140043120A1

    公开(公告)日:2014-02-13

    申请号:US13989049

    申请日:2011-03-23

    IPC分类号: H01H51/06

    摘要: A electromagnetic relay including a plate-shaped pivoting piece (32), one end of which is supported in cantilever state, pivoted by a movable block (40), which reciprocates in the up-down direction on the basis of excitation and demagnetization of an electromagnet block (20) housed within a housing (10, 50), and causes a movable contact (34) formed on the other end of the plate-shaped pivoting piece (32) to make/break contact with an anchored contact (36) formed on the tip section of an anchored contact terminal (35). In particular, the one-end section of the plate-shaped pivoting piece (32) is supported pivotably in cantilever state by the upper end section of a movable contact terminal (31), with a support spring (33) comprising a conductive sheet spring material interposed therebetween.

    摘要翻译: 一种电磁继电器,包括其一端以悬臂状态支撑的板状枢转件(32),由可移动块(40)枢转,所述可移动块(40)在上下方向上往复运动,其基于激磁和退磁 电容器块(20),其容纳在壳体(10,50)内,并且使得形成在所述板状枢转片(32)的另一端上的可动接触件(34)与锚定接触件(36)形成/断开接触, 形成在锚定接触端子(35)的尖端部分上。 特别地,板状枢转片(32)的一端部通过可动接触端子(31)的上端部以悬臂状可枢转地支撑,支撑弹簧(33)包括导电板弹簧 介于其间的材料。

    Non-volatile semiconductor storage device and method of manufacturing the same
    60.
    发明授权
    Non-volatile semiconductor storage device and method of manufacturing the same 有权
    非易失性半导体存储装置及其制造方法

    公开(公告)号:US08426976B2

    公开(公告)日:2013-04-23

    申请号:US12392636

    申请日:2009-02-25

    IPC分类号: H01L29/792 H01L21/28

    摘要: A non-volatile semiconductor storage device has a plurality of memory strings with a plurality of electrically rewritable memory cells connected in series. Each of the memory strings includes: a columnar semiconductor layer extending in a direction perpendicular to a substrate; a plurality of conductive layers formed at a sidewall of the columnar semiconductor layer via memory layers; and interlayer insulation layers formed above of below the conductive layers. A sidewall of the conductive layers facing the columnar semiconductor layer is formed to be inclined such that the distance thereof from a central axis of the columnar semiconductor layer becomes larger at lower position thereof than at upper position thereof. While, a sidewall of the interlayer insulation layers facing the columnar semiconductor layer is formed to be inclined such that the distance thereof from a central axis of the columnar semiconductor layer becomes smaller at lower position thereof than at upper position thereof.

    摘要翻译: 非易失性半导体存储装置具有多个具有串联连接的多个电可重写存储单元的存储器串。 每个存储器串包括:在垂直于衬底的方向上延伸的柱状半导体层; 多个导电层,经由存储层形成在所述柱状半导体层的侧壁处; 以及形成在导电层下方的层间绝缘层。 形成面向柱状半导体层的导电层的侧壁,使得其与柱状半导体层的中心轴的距离在其下部位置比在其上部位置变大。 同时,面对柱状半导体层的层间绝缘层的侧壁形成为倾斜,使得其在柱状半导体层的中心轴线处的距离在其下部位置处比在其上部位置变小。