摘要:
An electromagnetic relay having a moving contact plate and fixed contact plates juxtaposed with one another on a base. A moving iron plate is rotated during magnetization/demagnetization of a coil block put on the base to reciprocate a card in a horizontal direction. The moving contact plate is allowed to undergo elastic deformation so that a contact on the moving contact plate is brought into contact and out of contact with contacts on the fixed contact plates. The top corners of the moving contact plate is bent into an upper component and a lower components in such a fashion as to form card acceptance portions, and a distal end portion of the card is brought into contact with an inner surface of the card acceptance portions.
摘要:
A shift control system for a V-belt type continuously variable transmission is provided. The shift control system comprises a controller programmed to store an actual transmission ratio of the continuously variable transmission at stop of an associated vehicle drive source, and inhibit, at restart of the vehicle drive source, an initializing operation for returning an operational position of the shift actuator to a standard position when the actual transmission ratio is more on a high-speed side than a predetermined transmission ratio. A shift control method is also provided.
摘要:
The shift control apparatus for a continuously-variable transmission includes; a primary pulley; a secondary pulley connected with the primary pulley by a belt; a shift actuator adapted to vary a speed ratio; a line pressure adjusting section configured to adjust a line pressure; a secondary-pressure adjusting section configured to adjust a secondary pressure; and a control section configured to control the shift actuator, the line pressure adjusting section, and the secondary-pressure adjusting section. Moreover, the control section includes a fail determining section configured to determine whether the shift actuator is under a failed condition. The control section is configured to carry out a fail-safe shift-actuator fixing control to fix the shift actuator, when the fail determining section determines that the shift actuator is under the failed condition, and is configured to carry out a fail-safe hydraulic control to bring the line pressure to its upper limit pressure and bring the secondary pressure to its maximum pressure, when a control-start criterion predetermined to secure driving performance of the vehicle is satisfied under the failed condition.
摘要:
The invention provides an electromagnetic relay excellent in insulating property and high in opening and closing characteristics and productivity.Therefore, a pair of pedestal portions for coil terminals are arranged in the outer circumferential edge portion of the lower flange portion of a spool. A coil drawing-out groove continuously connected to the upper face of the above pedestal portion for a coil terminal is formed along the outer circumferential edge portion of the above lower flange portion. A storing concave portion able to store a shading coil attached to a magnetic pole portion of an iron core projected from a central hole of the above spool is formed on the lower face of the above lower flange portion.
摘要:
A plurality of a first conductive layers are provided at a certain interval L in a vertical direction, with a dielectric sandwiched therebetween. The certain interval L is set so that the first dielectric has an equivalent oxide thickness DEOT that satisfies the following relation (1). Dsio2
摘要:
The semiconductor memory device of the present invention includes a plurality of memory strings having a plurality of electrically reprogrammable memory cells connected in series, the memory strings having a column shaped semiconductor, a first insulation film formed around the column shaped semiconductor, a charge accumulation layer formed around the first insulation film, a second insulation film formed around the charge accumulation film and a plurality of electrodes formed around the second insulation film, a bit line connected to one end of the memory strings via a plurality of selection transistors, and a conducting layer extending in two dimensions and in which the plurality of electrodes of the memory strings and the plurality of electrodes of different memory strings are shared respectively, wherein each end part of the conducting layer is formed in step shapes in a direction parallel with the bit line.
摘要:
A electromagnetic relay including a plate-shaped pivoting piece (32), one end of which is supported in cantilever state, pivoted by a movable block (40), which reciprocates in the up-down direction on the basis of excitation and demagnetization of an electromagnet block (20) housed within a housing (10, 50), and causes a movable contact (34) formed on the other end of the plate-shaped pivoting piece (32) to make/break contact with an anchored contact (36) formed on the tip section of an anchored contact terminal (35). In particular, the one-end section of the plate-shaped pivoting piece (32) is supported pivotably in cantilever state by the upper end section of a movable contact terminal (31), with a support spring (33) comprising a conductive sheet spring material interposed therebetween.
摘要:
A control device for a vehicle continuously variable transmission comprises a shift control means for controlling either of or both the speed ratio at the continuously variable transmission mechanism and the gear position at the subtransmission mechanism so as to adjust an overall speed ratio to a final speed ratio and a torque capacity control means for controlling the torque capacity at a disengagement-side frictional engagement element in the subtransmission mechanism so as to sustain a torque capacity value substantially equal to zero in an inertia phase occurring during a process of adjusting the gear position at the subtransmission mechanism from the first gear position to the second gear position when a negative torque is input to the vehicle continuously variable transmission.
摘要:
A non-volatile semiconductor storage device has a plurality of memory strings with a plurality of electrically rewritable memory cells connected in series. Each of the memory strings includes: a columnar semiconductor layer extending in a direction perpendicular to a substrate; a plurality of conductive layers formed at a sidewall of the columnar semiconductor layer via memory layers; and interlayer insulation layers formed above of below the conductive layers. A sidewall of the conductive layers facing the columnar semiconductor layer is formed to be inclined such that the distance thereof from a central axis of the columnar semiconductor layer becomes larger at lower position thereof than at upper position thereof. While, a sidewall of the interlayer insulation layers facing the columnar semiconductor layer is formed to be inclined such that the distance thereof from a central axis of the columnar semiconductor layer becomes smaller at lower position thereof than at upper position thereof.