中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

101 records (took 0.029 seconds)

    LIQUID CRYSTAL DISPLAY DEVICE AND ELECTRONIC DEVICE INCLUDING THE SAME
    52.
    发明申请
    LIQUID CRYSTAL DISPLAY DEVICE AND ELECTRONIC DEVICE INCLUDING THE SAME 审中-公开

    公开(公告)号：US20170133511A1

    公开(公告)日：2017-05-11

    申请号：US15416164

    申请日：2017-01-26

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Ryo ARASAWA ,  Hideaki SHISHIDO ,  Shunpei YAMAZAKI

    IPC: H01L29/786 ,  H01L29/49 ,  G02F1/1343 ,  G09G3/36 ,  G02F1/1362 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/24

    Abstract: A liquid crystal display device is provided in which the aperture ratio can be increased in a pixel including a thin film transistor in which an oxide semiconductor is used. In the liquid crystal display device, the thin film transistor including a gate electrode, a gate insulating layer and an oxide semiconductor layer which are provided so as to overlap with the gate electrode, and a source electrode and a drain electrode which overlap part of the oxide semiconductor layer is provided between a signal line and a pixel electrode which are provided in a pixel portion. The off-current of the thin film transistor is 1×10−13 A or less. A potential can be held only by a liquid crystal capacitor, without a capacitor which is parallel to a liquid crystal element, and a capacitor connected to the pixel electrode is not formed in the pixel portion.

    LIGHT-EMITTING DISPLAY DEVICE AND ELECTRONIC DEVICE INCLUDING THE SAME
    53.
    发明申请
    LIGHT-EMITTING DISPLAY DEVICE AND ELECTRONIC DEVICE INCLUDING THE SAME 审中-公开
    发光显示装置和包括其的电子装置

    公开(公告)号：US20160233239A1

    公开(公告)日：2016-08-11

    申请号：US15131119

    申请日：2016-04-18

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Ryo ARASAWA ,  Hideaki SHISHIDO

    IPC: H01L27/12

    Abstract: An object is to provide a light-emitting display device in which a pixel including a thin film transistor using an oxide semiconductor has a high aperture ratio. The light-emitting display device includes a plurality of pixels each including a thin film transistor and a light-emitting element. The pixel is electrically connected to a first wiring functioning as a scan line. The thin film transistor includes an oxide semiconductor layer over the first wiring with a gate insulating film therebetween. The oxide semiconductor layer is extended beyond the edge of a region where the first wiring is provided. The light-emitting element and the oxide semiconductor layer overlap with each other.

    Abstract translation: 本发明的目的是提供一种发光显示装置，其中包括使用氧化物半导体的薄膜晶体管的像素具有高开口率。 发光显示装置包括多个像素，每个像素包括薄膜晶体管和发光元件。 像素电连接到用作扫描线的第一布线。 薄膜晶体管包括在第一布线之间的氧化物半导体层，其间具有栅极绝缘膜。 氧化物半导体层延伸超过设置有第一布线的区域的边缘。 发光元件和氧化物半导体层彼此重叠。

    SEMICONDUCTOR DEVICE AND DISPLAY DEVICE
    54.
    发明申请
    SEMICONDUCTOR DEVICE AND DISPLAY DEVICE 有权
    半导体器件和显示器件

    公开(公告)号：US20150372146A1

    公开(公告)日：2015-12-24

    申请号：US14741961

    申请日：2015-06-17

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Hideaki SHISHIDO ,  Satoru SAITO ,  Yukinori SHIMA ,  Daisuke KUROSAKI ,  Junichi KOEZUKA ,  Shunpei YAMAZAKI

    IPC: H01L29/786 ,  H01L29/417 ,  H01L29/04 ,  H01L29/24 ,  H01L29/06

    CPC classification number: H01L29/7869 ,  H01L29/04 ,  H01L29/0692 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/41775 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/78696

    Abstract: A semiconductor device with stable electrical characteristics is provided. The semiconductor device includes an oxide semiconductor film, a first gate electrode, a second gate electrode, a first conductive film, and a second conductive film. The first gate electrode is electrically connected to the second gate electrode. The first conductive film and the second conductive film function as a source electrode and a drain electrode. The oxide semiconductor film includes a first region that overlaps with the first conductive film, a second region that overlaps with the second conductive film, and a third region that overlaps with a gate electrode and the third conductive film. The first region includes a first edge that is opposed to the second region. The second region includes a second edge that is opposed to the first region. The length of the first edge is shorter than the length of the second edge.

    Abstract translation: 提供具有稳定电特性的半导体器件。 半导体器件包括氧化物半导体膜，第一栅电极，第二栅电极，第一导电膜和第二导电膜。 第一栅电极电连接到第二栅电极。 第一导电膜和第二导电膜用作源电极和漏电极。 氧化物半导体膜包括与第一导电膜重叠的第一区域，与第二导电膜重叠的第二区域和与栅电极和第三导电膜重叠的第三区域。 第一区域包括与第二区域相对的第一边缘。 第二区域包括与第一区域相对的第二边缘。 第一边缘的长度短于第二边缘的长度。

    SEMICONDUCTOR DEVICE
    55.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号：US20150214379A1

    公开(公告)日：2015-07-30

    申请号：US14677071

    申请日：2015-04-02

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Takayuki ABE ,  Hideaki SHISHIDO

    IPC: H01L29/786 ,  H01L27/32 ,  H01L29/423

    CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/3248 ,  H01L29/42376 ,  H01L29/42384 ,  H01L29/78606 ,  H01L29/78645 ,  H01L29/78648

    Abstract: The threshold voltage is shifted in a negative or positive direction in some cases by an unspecified factor in a manufacturing process of the thin film transistor. If the amount of shift from 0 V is large, driving voltage is increased, which results in an increase in power consumption of a semiconductor device. Thus, a resin layer having good flatness is formed as a first protective insulating film covering the oxide semiconductor layer, and then a second protective insulating film is formed by a sputtering method or a plasma CVD method under a low power condition over the resin layer. Further, in order to adjust the threshold voltage to a desired value, gate electrodes are provided over and below an oxide semiconductor layer.

    Abstract translation: 在薄膜晶体管的制造过程中，阈值电压在负方向或正方向上偏移一些未指定因子。 如果从0V的偏移量大，则驱动电压增加，这导致半导体器件的功耗的增加。 因此，形成具有良好平坦度的树脂层作为覆盖氧化物半导体层的第一保护绝缘膜，然后通过溅射法或等离子体CVD法在低功率条件下在树脂层上形成第二保护绝缘膜。 此外，为了将阈值电压调整为期望值，在氧化物半导体层的上方和下方设置栅电极。

    DISPLAY DEVICE
    56.
    发明申请
    DISPLAY DEVICE 审中-公开
    显示设备

    公开(公告)号：US20150144946A1

    公开(公告)日：2015-05-28

    申请号：US14552029

    申请日：2014-11-24

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Koji KUSUNOKI ,  Hiroyuki MIYAKE ,  Hideaki SHISHIDO

    IPC: G02F1/1335 ,  H01L27/12 ,  G02F1/1362 ,  G02F1/1333 ,  G02F1/1343 ,  G02F1/1368

    CPC classification number: G02F1/133621 ,  G02F1/133345 ,  G02F1/134309 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/134354 ,  H01L27/1225

    Abstract: A display device that includes a capacitor with low power consumption even when the number of subpixels included in a pixel is increased is provided. The area of an opening in a subpixel that controls transmission of white light is smaller than the area of an opening in each of subpixels that control transmission of red light, green light, and blue light. A transistor included in each subpixel includes an oxide semiconductor film. The capacitor includes a first electrode and a second electrode. The first electrode is a metal oxide film in contact with an inorganic insulating film over the transistor. The second electrode is a light-transmitting conductive film that is over the inorganic insulating film and is electrically connected to the transistor.

    Abstract translation: 提供了即使当包括在像素中的子像素的数量增加时，也包括具有低功耗的电容器的显示装置。 控制白光传输的子像素中的开口面积小于控制红光，绿光，蓝光的透射的各子像素的开口面积。 包括在每个子像素中的晶体管包括氧化物半导体膜。 电容器包括第一电极和第二电极。 第一电极是与晶体管上的无机绝缘膜接触的金属氧化物膜。 第二电极是在无机绝缘膜上方并且与晶体管电连接的透光导电膜。

    IMAGING DEVICE AND OPERATION METHOD THEREOF
    57.
    发明申请
    IMAGING DEVICE AND OPERATION METHOD THEREOF 有权
    成像装置及其操作方法

    公开(公告)号：US20150034831A1

    公开(公告)日：2015-02-05

    申请号：US14446911

    申请日：2014-07-30

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Hiroyuki MIYAKE ,  Hideaki SHISHIDO

    IPC: G01T1/24 ,  H01L27/146 ,  G01T1/20 ,  G01T1/208

    CPC classification number: H01L27/14659 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14663 ,  H04N5/32 ,  H04N5/374

    Abstract: Provided is an imaging device that can correct an output value of a pixel circuit. The imaging device includes a pixel circuit, a current detection circuit, an A/D converter, one or more memory circuit portions, and an arithmetic circuit portion. The pixel circuit includes a transistor, a charge accumulation portion, and a light-receiving element. The memory circuit portion includes a first look-up table, a second look-up table, and a region where image data output from the arithmetic circuit portion is stored. The first look-up table stores data of potentials of the charge accumulation portion, which depends on the intensity of light. The second look-up table stores output data of the transistor, which depends on the potentials of the charge accumulation portion.

    Abstract translation: 提供了可以校正像素电路的输出值的成像装置。 成像装置包括像素电路，电流检测电路，A / D转换器，一个或多个存储器电路部分和运算电路部分。 像素电路包括晶体管，电荷累积部分和光接收元件。 存储器电路部分包括第一查找表，第二查找表和存储从运算电路部分输出的图像数据的区域。 第一查找表存储电荷累积部分的电位的数据，其依赖于光的强度。 第二查找表存储取决于电荷累积部分的电位的晶体管的输出数据。

    DISPLAY APPARATUS AND ELECTRONIC DEVICE INCLUDING THE DISPLAY APPARATUS
    59.
    发明申请
    DISPLAY APPARATUS AND ELECTRONIC DEVICE INCLUDING THE DISPLAY APPARATUS 有权

    公开(公告)号：US20240412687A1

    公开(公告)日：2024-12-12

    申请号：US18695921

    申请日：2022-10-03

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Koji KUSUNOKI ,  Tomoaki ATSUMI ,  Hideaki SHISHIDO ,  Susumu KAWASHIMA

    IPC: G09G3/3233 ,  G09G3/3266 ,  H10K59/127 ,  H10K59/131 ,  H10K59/35

    Abstract: A display apparatus with a novel structure is provided. The display apparatus includes a display portion where a first transistor and a display element are provided to be stacked. The display portion includes a first sub-display portion and a second sub-display portion. The first sub-display portion and the second sub-display portion each include a plurality of pixel circuits each controlling the display element and a gate line driver circuit outputting a signal for driving the plurality of pixel circuits. The gate line driver circuit and the plurality of pixel circuits each include a first transistor. In the display portion, the number of image rewriting times per unit time for image data in the first sub-display portion is smaller than the number of image rewriting times per unit time for image data in the second sub-display portion.

Patent Agency Ranking