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    SEMICONDUCTOR FILM, TRANSISTOR, SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND ELECTRONIC APPLIANCE
    53.
    发明申请
    SEMICONDUCTOR FILM, TRANSISTOR, SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND ELECTRONIC APPLIANCE 有权
    半导体膜，晶体管，半导体器件，显示器件和电子器件

    公开(公告)号：US20150243738A1

    公开(公告)日：2015-08-27

    申请号：US14626049

    申请日：2015-02-19

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Akihisa SHIMOMURA ,  Yasumasa YAMANE ,  Yuhei SATO ,  Takahisa ISHIYAMA ,  Kenichi OKAZAKI ,  Chiho KAWANABE ,  Masashi OOTA ,  Noritaka ISHIHARA

    IPC: H01L29/24 ,  C01G15/00 ,  H01L27/12

    CPC classification number: H01L29/7869 ,  C01G15/006 ,  C01P2002/72 ,  C01P2002/89 ,  C01P2004/04 ,  C01P2006/40 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/78696

    Abstract: Favorable electrical characteristics are given to a semiconductor device. Furthermore, a semiconductor device having high reliability is provided. One embodiment of the present invention is an oxide semiconductor film having a plurality of electron diffraction patterns which are observed in such a manner that a surface where the oxide semiconductor film is formed is irradiated with an electron beam having a probe diameter whose half-width is 1 nm. The plurality of electron diffraction patterns include 50 or more electron diffraction patterns which are observed in different areas, the sum of the percentage of first electron diffraction patterns and the percentage of second electron diffraction patterns accounts for 100%, the first electron diffraction patterns account for 90% or more, the first electron diffraction pattern includes observed points which indicates that a c-axis is oriented in a direction substantially perpendicular to the surface where the oxide semiconductor film is formed.

    Abstract translation: 给半导体器件提供有利的电特性。 此外，提供了具有高可靠性的半导体器件。 本发明的一个实施方案是具有多个电子衍射图案的氧化物半导体膜，其以使得形成氧化物半导体膜的表面被照射电子束，该电子束的半峰宽为 1nm。 多个电子衍射图案包括在不同区域中观察到的50个以上的电子衍射图案，第一电子衍射图案的百分比和第二电子衍射图案的百分比之和占100％，第一电子衍射图案占 90％以上时，第一电子衍射图案包括观察点，其表示c轴在与形成氧化物半导体膜的表面基本垂直的方向上取向。

    SEMICONDUCTOR DEVICE
    54.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号：US20150236165A1

    公开(公告)日：2015-08-20

    申请号：US14700433

    申请日：2015-04-30

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Masashi TSUBUKU ,  Yusuke NONAKA ,  Noritaka ISHIHARA ,  Masashi OOTA ,  Hideyuki KISHIDA

    IPC: H01L29/786 ,  H01L29/04

    CPC classification number: H01L29/7869 ,  H01L21/02565 ,  H01L21/477 ,  H01L29/045 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78696

    Abstract: Reducing hydrogen concentration in a channel formation region of an oxide semiconductor is important in stabilizing threshold voltage of a transistor including an oxide semiconductor and improving reliability. Hence, hydrogen is attracted from the oxide semiconductor and trapped in a region of an insulating film which overlaps with a source region and a drain region of the oxide semiconductor. Impurities such as argon, nitrogen, carbon, phosphorus, or boron are added to the region of the insulating film which overlaps with the source region and the drain region of the oxide semiconductor, thereby generating a defect. Hydrogen in the oxide semiconductor is attracted to the defect in the insulating film. The defect in the insulating film is stabilized by the presence of hydrogen.

    Abstract translation: 降低氧化物半导体的沟道形成区域中的氢浓度对于稳定包括氧化物半导体的晶体管的阈值电压和提高可靠性是重要的。 因此，氢被氧化物半导体吸引并被捕获在与氧化物半导体的源极区域和漏极区域重叠的绝缘膜的区域中。 杂质如氩，氮，碳，磷或硼添加到与氧化物半导体的源极区和漏极区重叠的绝缘膜的区域中，从而产生缺陷。 氧化物半导体中的氢被吸引到绝缘膜中的缺陷。 通过氢气的存在使绝缘膜中的缺陷稳定。

    SEMICONDUCTOR DEVICE
    55.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20150084043A1

    公开(公告)日：2015-03-26

    申请号：US14486089

    申请日：2014-09-15

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Noritaka ISHIHARA ,  Masashi OOTA ,  Masashi TSUBUKU ,  Masami JINTYOU ,  Yukinori SHIMA ,  Junichi KOEZUKA ,  Yasuharu HOSAKA ,  Shunpei YAMAZAKI

    IPC: H01L27/12 ,  H01L29/417 ,  H01L29/45

    CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/04 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42356 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/78693 ,  H01L29/78696

    Abstract: Defects in an oxide semiconductor film are reduced in a semiconductor device including the oxide semiconductor film. The electrical characteristics of a semiconductor device including an oxide semiconductor film are improved. The reliability of a semiconductor device including an oxide semiconductor film is improved. A semiconductor device including an oxide semiconductor layer; a metal oxide layer in contact with the oxide semiconductor layer, the metal oxide layer including an In-M oxide (M is Ti, Ga, Y, Zr, La, Ce, Nd, or Hf); and a conductive layer in contact with the metal oxide layer, the conductive layer including copper, aluminum, gold, or silver is provided. In the semiconductor device, y/(x+y) is greater than or equal to 0.75 and less than 1 where the atomic ratio of In to M included in the metal oxide layer is In:M=x:y.

    Abstract translation: 在包括氧化物半导体膜的半导体器件中，氧化物半导体膜中的缺陷减少。 提高了包括氧化物半导体膜的半导体器件的电特性。 提高了包括氧化物半导体膜的半导体器件的可靠性。 一种包括氧化物半导体层的半导体器件; 与氧化物半导体层接触的金属氧化物层，所述金属氧化物层包含In-M氧化物（M为Ti，Ga，Y，Zr，La，Ce，Nd或Hf）; 和与金属氧化物层接触的导电层，提供包括铜，铝，金或银的导电层。 在半导体器件中，y /（x + y）大于或等于0.75且小于1，其中包含在金属氧化物层中的In与M的原子比为In：M = x：y。

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