公开(公告)号：US20120214276A1

公开(公告)日：2012-08-23

申请号：US13455425

申请日：2012-04-25

申请人： Yoshiaki OIKAWA ,  Hotaka MARUYAMA ,  Hiromichi GODO ,  Daisuke KAWAE ,  Shunpei YAMAZAKI

发明人： Yoshiaki OIKAWA ,  Hotaka MARUYAMA ,  Hiromichi GODO ,  Daisuke KAWAE ,  Shunpei YAMAZAKI

IPC分类号： H01L21/363

CPC分类号： H01L27/1225 ,  G02F1/1368 ,  G02F2201/121 ,  G02F2201/123 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/156 ,  H01L27/3248 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

摘要： An object is to provide a semiconductor device provided with a thin film transistor having excellent electric characteristics using an oxide semiconductor layer. An In—Sn—O-based oxide semiconductor layer including SiOX is used for a channel formation region. In order to reduce contact resistance between the In—Sn—O-based oxide semiconductor layer including SiOX and a wiring layer formed from a metal material having low electric resistance, a source region or drain region is formed between a source electrode layer or drain electrode layer and the In—Sn—O-based oxide semiconductor layer including SiOX. The source region or drain region and a pixel region are formed using an In—Sn—O-based oxide semiconductor layer which does not include SiOX.

摘要翻译： 本发明的目的是提供一种具有使用氧化物半导体层的具有优异电特性的薄膜晶体管的半导体器件。 包括SiOX的In-Sn-O系氧化物半导体层用于沟道形成区域。 为了降低包含SiOX的In-Sn-O系氧化物半导体层与由电阻低的金属材料形成的布线层之间的接触电阻，在源电极层或漏电极之间形成源极区或漏极区 层和包含SiOX的In-Sn-O系氧化物半导体层。 使用不包含SiOX的In-Sn-O系氧化物半导体层来形成源极区域或漏极区域以及像素区域。

公开(公告)号：US20120211874A1

公开(公告)日：2012-08-23

申请号：US13461249

申请日：2012-05-01

申请人： Shunpei YAMAZAKI ,  Toru TAKAYAMA ,  Junya MARUYAMA ,  Yumiko OHNO

发明人： Shunpei YAMAZAKI ,  Toru TAKAYAMA ,  Junya MARUYAMA ,  Yumiko OHNO

IPC分类号： H01L29/02

CPC分类号： H01L27/1218 ,  H01L23/291 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/3244 ,  H01L29/66757 ,  H01L29/78603 ,  H01L51/0002 ,  H01L51/0021 ,  H01L51/0024 ,  H01L51/003 ,  H01L2221/68368 ,  H01L2924/0002 ,  Y10S438/928 ,  Y10S438/982 ,  H01L2924/00

摘要： It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Further, it is also an object of the present invention to bond a layer to be peeled to various base materials to provide a lighter semiconductor device and a manufacturing method thereof. Particularly, it is an object to bond various elements typified by a TFT, (a thin film diode, a photoelectric conversion element comprising a PIN junction of silicon, or a silicon resistance element) to a flexible film to provide a lighter semiconductor device and a manufacturing method thereof.

摘要翻译： 本发明的目的是提供一种不会对被剥离层造成损伤的剥离方法，并且不仅使表面积小的层被剥离，而且还允许具有大表面积的被剥离层 要完全去皮。 此外，本发明的另一个目的是将要剥离的层粘合到各种基材上以提供更轻的半导体器件及其制造方法。 特别地，目的是将由TFT表示的各种元素（薄膜二极管，包含硅的PIN结的光电转换元件或硅电阻元件）粘合到柔性膜上以提供更轻的半导体器件和 其制造方法。

公开(公告)号：US20120206503A1

公开(公告)日：2012-08-16

申请号：US13363408

申请日：2012-02-01

申请人： Yoshiharu HIRAKATA ,  Jun KOYAMA ,  Shunpei YAMAZAKI

发明人： Yoshiharu HIRAKATA ,  Jun KOYAMA ,  Shunpei YAMAZAKI

IPC分类号： G09G5/00 ,  G09G3/36 ,  G02F1/1335

CPC分类号： H04N13/31 ,  G02B27/225 ,  G02F1/13306 ,  G02F1/1347 ,  G02F1/136209 ,  G02F1/1368 ,  G09G3/003 ,  H01L27/1225 ,  H04N13/324 ,  H04N13/359 ,  H04N13/361 ,  H04N2213/001

摘要： A display device capable of displaying both a 3D image and a 2D image is provided. The display device includes a plurality of optical filter regions where light-blocking panels for producing binocular disparity are arranged in matrix. The light-blocking panel can select whether to transmit light emitted from a display panel in each of the plurality of optical filter regions. Thus, in the display device, some regions where binocular disparity is produced can be provided. Consequently, the display device can display both a 3D image and a 2D image.

摘要翻译： 提供能够同时显示3D图像和2D图像的显示装置。 显示装置包括多个滤光器区域，其中用于产生双目视差的遮光板被排列成矩阵。 遮光面板可以选择是否在多个滤光器区域中的每一个中透射从显示面板发射的光。 因此，在显示装置中，可以提供产生双目视差的一些区域。 因此，显示装置可以同时显示3D图像和2D图像。

公开(公告)号：US20120206446A1

公开(公告)日：2012-08-16

申请号：US13367715

申请日：2012-02-07

申请人： Shunpei YAMAZAKI ,  Jun KOYAMA

发明人： Shunpei YAMAZAKI ,  Jun KOYAMA

IPC分类号： G06T15/00

CPC分类号： H04N13/366 ,  G02B27/2214 ,  H04N13/31 ,  H04N13/315 ,  H04N13/324

摘要： A display device includes a display panel including a matrix of pixel regions, and a shutter panel including a matrix of optical shutter regions each of which state is selected from a light-transmitting state and a light-shielding state. In a first display state, the display panel performs display regarding one pixel region as a display element unit, and each of the plurality of optical shutter regions in the shutter panel is brought into a light-transmitting state or a light-shielding state. In a second display state, the display panel performs display regarding at least two pixel regions as the display element unit, and each of the plurality of optical shutter regions in the shutter panel is brought into a light-transmitting state or a light-shielding state. As a result, the range of distance with which 3D images can be displayed can differ between the first display state and the second display state.

摘要翻译： 显示装置包括包括像素区域矩阵的显示面板和包括光闸区域矩阵的快门面板，每个光闸区域的状态均选自透光状态和遮光状态。 在第一显示状态下，显示面板执行关于一个像素区域的显示作为显示元件单元，并且快门面板中的多个光学快门区域中的每一个进入透光状态或遮光状态。 在第二显示状态下，显示面板执行关于至少两个像素区域的显示作为显示元件单元，并且快门面板中的多个光学快门区域中的每一个进入透光状态或遮光状态 。 结果，可以显示3D图像的距离的范围可以在第一显示状态和第二显示状态之间不同。

公开(公告)号：US20120187396A1

公开(公告)日：2012-07-26

申请号：US13355950

申请日：2012-01-23

申请人： Shunpei YAMAZAKI ,  Teruyuki FUJII ,  Sho NAGAMATSU

发明人： Shunpei YAMAZAKI ,  Teruyuki FUJII ,  Sho NAGAMATSU

IPC分类号： H01L29/786 ,  H01L21/44

CPC分类号： H01L29/7869 ,  H01L23/564 ,  H01L29/36 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78621 ,  H01L2924/0002 ,  H01L2924/00

摘要： A base insulating film is formed over a substrate. A first oxide semiconductor film is formed over the base insulating film, and then first heat treatment is performed to form a second oxide semiconductor film. Then, selective etching is performed to form a third oxide semiconductor film. An insulating film is formed over the first insulating film and the third oxide semiconductor film. A surface of the insulating film is polished to expose a surface of the third oxide semiconductor film, so that a sidewall insulating film is formed in contact with at least a side surface of the third oxide semiconductor film. Then, a source electrode and a drain electrode are formed over the sidewall insulating film and the third oxide semiconductor film. A gate insulating film and a gate electrode are formed.

摘要翻译： 在基板上形成基极绝缘膜。 在基底绝缘膜上形成第一氧化物半导体膜，然后进行第一热处理以形成第二氧化物半导体膜。 然后，进行选择性蚀刻以形成第三氧化物半导体膜。 绝缘膜形成在第一绝缘膜和第三氧化物半导体膜上。 抛光绝缘膜的表面以暴露第三氧化物半导体膜的表面，使得形成与第三氧化物半导体膜的至少侧面接触的侧壁绝缘膜。 然后，在侧壁绝缘膜和第三氧化物半导体膜上形成源电极和漏电极。 形成栅极绝缘膜和栅电极。

公开(公告)号：US20120181522A1

公开(公告)日：2012-07-19

申请号：US13417551

申请日：2012-03-12

申请人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Hisao IKEDA ,  Yasuo NAKAMURA ,  Keiko SAITO

发明人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Hisao IKEDA ,  Yasuo NAKAMURA ,  Keiko SAITO

IPC分类号： H01L27/32

CPC分类号： H01L27/3272 ,  H01L27/1218 ,  H01L27/1222 ,  H01L27/3211 ,  H01L27/322 ,  H01L27/3244 ,  H01L27/3248 ,  H01L33/08 ,  H01L33/36 ,  H01L33/50 ,  H01L33/56 ,  H01L33/58 ,  H01L51/5052 ,  H01L51/5088 ,  H01L51/5092 ,  H01L51/5203 ,  H01L51/5212 ,  H01L51/5228 ,  H01L51/5237 ,  H01L51/5246 ,  H01L51/5253 ,  H01L51/5259 ,  H01L51/5262 ,  H01L51/5284 ,  H01L51/56 ,  H01L2251/5315

摘要： The present invention provides a light-emitting device comprising a first light-emitting element that emits red light, a second light-emitting element that emits green light, a third light-emitting element that emits blue light, and a color filter, where the color filter comprises a first coloring layer that selectively transmits red light, a second coloring layer that selectively transmits green light, and a third coloring layer that selectively transmits blue light, the first to third light-emitting elements respectively correspond to the first to third coloring layers, wherein each of the first to third light-emitting elements has a first electrode, an electroluminescent layer on the first electrode, and a second electrode on the electroluminescent layer, and wherein the electroluminescent layer includes a layer in contact with the second electrode, and a metal oxide or a benzoxazole derivative is included in the layer in contact with the second electrode.

摘要翻译： 本发明提供一种包括发射红光的第一发光元件，发出绿光的第二发光元件，发出蓝光的第三发光元件和滤色器的发光器件，其中 滤色器包括选择性地透射红光的第一着色层，选择性地透射绿光的第二着色层和选择性地透射蓝光的第三着色层，第一至第三发光元件分别对应于第一至第三着色层 层，其中第一至第三发光元件中的每一个具有第一电极，第一电极上的电致发光层和电致发光层上的第二电极，并且其中电致发光层包括与第二电极接触的层， 并且在与第二电极接触的层中包含金属氧化物或苯并恶唑衍生物。

公开(公告)号：US20120175610A1

公开(公告)日：2012-07-12

申请号：US13346072

申请日：2012-01-09

申请人： Shunpei YAMAZAKI

发明人： Shunpei YAMAZAKI

IPC分类号： H01L29/786 ,  H01L21/34

CPC分类号： H01L29/66969 ,  H01L21/477 ,  H01L29/7869

摘要： A manufacturing method of a semiconductor device includes the steps of: forming a gate electrode over a substrate; forming a gate insulating film over the gate electrode; forming an oxide semiconductor film; performing heat treatment to form a second oxide semiconductor film after the step of forming the first oxide semiconductor film; forming a first conductive film; forming a first resist mask including regions whose thicknesses are different; etching the second oxide semiconductor film and the first conductive film using the first resist mask to form a third oxide semiconductor film and a second conductive film; reducing the size of the first resist mask to form a second resist mask; selectively etching the second conductive film using the second resist mask to remove a part of the second conductive film so that a source electrode and a drain electrode are formed.

摘要翻译： 半导体器件的制造方法包括以下步骤：在衬底上形成栅电极; 在栅电极上形成栅极绝缘膜; 形成氧化物半导体膜; 在形成第一氧化物半导体膜的步骤之后进行热处理以形成第二氧化物半导体膜; 形成第一导电膜; 形成包括厚度不同的区域的第一抗蚀剂掩模; 使用第一抗蚀剂掩模蚀刻第二氧化物半导体膜和第一导电膜，以形成第三氧化物半导体膜和第二导电膜; 减小第一抗蚀剂掩模的尺寸以形成第二抗蚀剂掩模; 使用第二抗蚀剂掩模选择性地蚀刻第二导电膜以去除第二导电膜的一部分，从而形成源电极和漏电极。

公开(公告)号：US20120175608A1

公开(公告)日：2012-07-12

申请号：US13345795

申请日：2012-01-09

申请人： Shunpei YAMAZAKI

发明人： Shunpei YAMAZAKI

IPC分类号： H01L29/786 ,  H01L21/34

CPC分类号： H01L27/1288 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/467 ,  H01L21/469 ,  H01L21/477 ,  H01L27/1214 ,  H01L27/1259 ,  H01L27/127 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

摘要： The semiconductor device includes a gate electrode over a substrate, a gate insulating layer over the gate electrode, an oxide semiconductor layer over the gate insulating layer, and a source electrode and a drain electrode over the oxide semiconductor layer. A length of part of an outer edge of the oxide semiconductor layer from an outer edge of the source electrode to an outer edge of the drain electrode is more than three times, preferably more than five times as long as a channel length of the semiconductor device. Further, oxygen is supplied from the gate insulating layer to the oxide semiconductor layer by heat treatment. In addition, an insulating layer is formed after the oxide semiconductor layer is selectively etched.

摘要翻译： 该半导体器件包括：衬底上的栅电极，栅电极上的栅极绝缘层，栅极绝缘层上的氧化物半导体层，以及氧化物半导体层上的源电极和漏电极。 从源电极的外边缘到漏电极的外边缘的氧化物半导体层的外边缘的一部分的长度是半导体器件的沟道长度的三倍以上，优选大于五倍 。 此外，通过热处理从栅极绝缘层向氧化物半导体层提供氧。 此外，在氧化物半导体层被选择性蚀刻之后形成绝缘层。

公开(公告)号：US20120161125A1

公开(公告)日：2012-06-28

申请号：US13330811

申请日：2011-12-20

申请人： Shunpei YAMAZAKI

发明人： Shunpei YAMAZAKI

IPC分类号： H01L29/12 ,  H01L21/336 ,  H01L21/425 ,  H01L29/78

CPC分类号： H01L29/7869 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78693

摘要： A semiconductor device capable of high speed operation is provided. Further, a highly reliable semiconductor device is provided. An oxide semiconductor having crystallinity is used for a semiconductor layer of a transistor. A channel formation region, a source region, and a drain region are formed in the semiconductor layer. The source region and the drain region are formed in such a manner that one or more of elements selected from rare gases and hydrogen are added to the semiconductor layer by an ion doping method or an ion implantation method with the use of a channel protective layer as a mask.

摘要翻译： 提供能够进行高速运转的半导体装置。 此外，提供了高度可靠的半导体器件。 具有结晶性的氧化物半导体用于晶体管的半导体层。 沟道形成区域，源极区域和漏极区域形成在半导体层中。 源极区域和漏极区域以这样的方式形成，即通过使用沟道保护层的离子掺杂方法或离子注入方法将选自稀有气体和氢气中的一种或多种元素添加到半导体层中 一个面具

公开(公告)号：US20120161124A1

公开(公告)日：2012-06-28

申请号：US13330801

申请日：2011-12-20

申请人： Shunpei YAMAZAKI

发明人： Shunpei YAMAZAKI

IPC分类号： H01L29/78 ,  H01L21/34

CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/426 ,  H01L27/1203 ,  H01L27/1225 ,  H01L27/1229 ,  H01L29/04 ,  H01L29/0847 ,  H01L29/36 ,  H01L29/42364 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78621 ,  H01L29/78696

摘要： A semiconductor device in which fluctuation in electric characteristics due to miniaturization is less likely to be caused is provided. The semiconductor device includes an oxide semiconductor film including a first region, a pair of second regions in contact with side surfaces of the first region, and a pair of third regions in contact with side surfaces of the pair of second regions; a gate insulating film provided over the oxide semiconductor film; and a first electrode that is over the gate insulating film and overlaps with the first region. The first region is a CAAC oxide semiconductor region. The pair of second regions and the pair of third regions are each an amorphous oxide semiconductor region containing a dopant. The dopant concentration of the pair of third regions is higher than the dopant concentration of the pair of second regions.