摘要:
A semiconductor memory device has a cell and amplifier portion, a syndrome generation circuit, an error checking and correction circuit, and a plurality of memory control blocks. The cell and amplifier portion has a memory cell array, a sense amplifier array, and a column gate array, and each of the memory control blocks has a data bus amplifier, a write amplifier, and a syndrome decoder circuit which decodes syndrome output from the syndrome generation circuit. Consequently, an occupancy area can be reduced by decreasing the number of wiring lines, and a large scale integration and a low power consumption can be realized.
摘要:
An oscillation device includes a first setting unit that outputs an oscillation period designation signal, a calculating unit that performs an arithmetic operation on the oscillation period designation signal, and an oscillating unit that generates an oscillation signal having a period based on the oscillation period designation signal subjected to the arithmetic operation.
摘要:
A semiconductor device includes a semiconductor substrate; a memory cell array including a plurality of memory cells formed on the semiconductor substrate and arranged in a matrix in a first direction and a second direction on the surface of the semiconductor substrate; a plurality of sense amplifiers formed on the semiconductor substrate and including a first sense amplifier and a second sense amplifier; and a plurality of bit lines extending along the first direction above the memory cell array, and arranged side by side in the second direction, wherein the plurality of bit lines include a first bit line pair formed in a first wiring layer and a second bit line pair formed in a second wiring layer located above the first wiring layer.
摘要:
Partial refresh information indicating enabling/disabling of a refresh operation is set according to an external input and is output as a partial set signal. A refresh request signal is output periodically corresponding to a memory block for which a refresh operation is enabled. The partial set signal is masked so as to enable a refresh operation for all of the memory blocks during a period in which the partial refresh information is changed by the external input. Thus, it is possible to prevent disabling of a refresh operation in response to a refresh request even when timing of changing the partial refresh information and timing of occurrence of the refresh request signal overlap. Consequently, the refresh operation can be executed securely, and malfunctioning of the semiconductor memory can be prevented.
摘要:
The present invention detects a sense amplifier having an unbalanced characteristic. In a test method for a semiconductor memory device for detecting a sense amplifier having an unbalanced characteristic, an intermediate potential having different H and L levels from normal operation is restored in a first memory cell of a first bit line connected to a test target sense amplifier, charge quantity when the capacitance of the capacitor is small is virtually stored in the first memory cell, then the data of the first memory cell is read, and a malfunction of the sense amplifier is checked based on the presence of an error of read data.
摘要:
A semiconductor memory device includes a timing signal circuit to generate a refresh timing signal comprised of a series of pulses, a refresh address circuit to generate a refresh address in synchronization with each pulse of the refresh timing signal, a pulse selecting circuit to assert a refresh request signal in synchronization with pulses selected from the series of pulses, and a memory core to receive the refresh address and the refresh request signal and to perform a refresh operation with respect to the refresh address in response to assertion of the refresh request signal, wherein arrangement is made to switch between a first operation mode in which the selected pulses are obtained by selecting one pulse out of every predetermined number of pulses from the series of pulses and a second operation mode in which the selected pulses are obtained by selecting consecutive pulses from the series of pulses.
摘要:
A clock output pad and a return clock receiving pad are disposed on a logic chip at a portion near a side of an integrated circuit chip and a portion near another side of the integrated circuit chip that opposes to the side. A clock receiving pad is disposed on a memory chip at portion near the side and the other side respectively. The clock receiving pad is electrically connected to the clock output pad and the return clock receiving pad. A plurality of clock signals are supplied from the logic chip to the memory chip, and a plurality of return clock signals are returned from the memory chip to the logic chip.
摘要:
A semiconductor storage device has a memory cell (501, 502) storing data; bit lines (BL1, BL2) connected to the memory cell, allowing therethrough data input or output to or from the memory cell; a sense amplifier (506a) connected to said bit lines, amplifying data on the bit lines; and a switching transistor (505a) connecting or disconnecting the bit line connected to the memory cell to or from the bit line connected to the sense amplifier. The switching transistor operates differently in a first memory cell access operation and in a second memory cell access operation.
摘要:
The present invention relates to a SDRAM and its control method which write or read data in synchronization with the external clock and its object is to provide a semiconductor memory device and its method which can be easily tested and evaluated by the conventional memory test equipment having a transfer type which transfers the data in synchronization with the rising and falling edges of the external clock. The semiconductor memory device has a write amplifier control section 14 and I/O data buffer/register 22 as a data transfer circuit corresponding to the data transfer type for the DDR type and SDR type. Also, a mode register 28 is formed to be used as a switch signal to switch the data transfer circuit to either DDR type or SDR type.
摘要:
A command receiver circuit receives a command signal in synchronization with either a rising edge or a falling edge of a clock signal. A data input/output circuit starts an output of read data and an input of write data in synchronization with the edges of the clock signal which are set in response to reception timing of the command signal. Since the command signal can be received in synchronization with both edges of the clock signal, it is possible to halve a clock cycle when a reception rate is the same as that of the conventional art. As a result of this, in a system on which the semiconductor memory device is mounted, it is possible to halve the frequency of a system clock and to reduce power consumption of a clock synchronization circuit in the system, without reducing a data input/output rate for the semiconductor memory device.