公开(公告)号：US06371744B1

公开(公告)日：2002-04-16

申请号：US09646996

申请日：2000-09-22

申请人： Masaru Mito ,  Masashi Yoshimura ,  Masaaki Takahashi

发明人： Masaru Mito ,  Masashi Yoshimura ,  Masaaki Takahashi

IPC分类号： F04C1816

CPC分类号： F04C29/005 ,  F04C2/086 ,  F04C2/18 ,  F04C13/002 ,  F04C15/0038 ,  F04C15/0088 ,  F04C15/0096 ,  F04C18/084 ,  F04C18/16 ,  F04C2220/12 ,  F05C2201/0442 ,  F05C2201/0466 ,  F05C2203/0808

摘要： A dry vacuum pump that includes a casting having an inner cylinder communicating with an inlet and an outlet of the pump, shafts supported by the casting, spiral toothed parts formed on the shaft a plurality of screw rotors each of which includes the shaft and the spiral toothed parts received in the inner cylinder intermeshing with each other. Timing gears each of which are attached to the respective shafts of the screw rotors that intermesh with each other. Locking mechanisms for fixing the timing gears to the shaft. Both of the shaft and the toothed part are made of spheroidal graphite cast iron containing 20 to 30 wt % of nickel are cast integrally.

摘要翻译： 一种干式真空泵，包括具有与泵的入口和出口连通的内筒的铸件，由铸件支撑的轴，在轴上形成的螺旋齿形部分，多个螺旋转子，每个螺杆转子包括轴和螺旋 容纳在内筒中的齿形部件相互啮合。 每个定时齿轮连接到彼此相互啮合的螺杆转子的相应轴上。 用于将正时齿轮固定到轴上的锁定机构。 轴和齿形部分均由含有20〜30重量％镍的球墨铸铁制成。

公开(公告)号：US5827472A

公开(公告)日：1998-10-27

申请号：US536446

申请日：1995-09-29

申请人： Masashi Yoshimura ,  Takeshi Satoh ,  Akira Yamaguchi ,  Akira Yamakawa

发明人： Masashi Yoshimura ,  Takeshi Satoh ,  Akira Yamaguchi ,  Akira Yamakawa

IPC分类号： C04B35/584

CPC分类号： C04B35/584

摘要： A process for the production of a silicon nitride sintered body which comprises heat-treating a stock of silicon nitride sintered body within a temperature range of from the temperature at which the internal friction of the stock exhibits a peculiar peak maximum minus 150.degree. C. to that plus 150.degree. C. A representative used in the process is one which is produced by mixing powdered silicon nitride with powdery sintering aids so as to give a powder mixture comprising 5 to 15% by weight (in terms of oxide) of at least one element selected from the group consisting of rare earth elements and aluminum, 0.5 to 5% by weight (in terms of oxide) of at least one element selected from the group consisting of Mg, Ti and Ca and the balance of Si.sub.3 N.sub.4, molding the powder mixture, and sintering the resulting compact in a nitrogen-containing atmosphere at 1500.degree. to 1700.degree. C.

摘要翻译： 一种氮化硅烧结体的制造方法，其特征在于，在从所述坯料的内部摩擦显示出特有的峰值最大值-150℃到+ 150℃的温度的温度范围内，对氮化硅烧结体的原料进行热处理， 该加工过程中使用的代表是通过将粉状氮化硅与粉末状烧结助剂混合制成的代表物，从而得到包含5至15重量％（以氧化物计）至少一种 选自由稀土元素和铝组成的组的元素为0.5〜5重量％（以氧化物计），选自Mg，Ti和Ca中的至少一种元素，余量为Si 3 N 4，将粉末成型 混合，在1500〜1700℃的含氮气氛中烧结。

公开(公告)号：US5424256A

公开(公告)日：1995-06-13

申请号：US138346

申请日：1993-10-18

申请人： Masashi Yoshimura ,  Takehisa Yamamoto ,  Shinichi Yamagata ,  Jin-Joo Matsui ,  Akira Yamakawa

发明人： Masashi Yoshimura ,  Takehisa Yamamoto ,  Shinichi Yamagata ,  Jin-Joo Matsui ,  Akira Yamakawa

IPC分类号： C04B35/593 ,  C04B35/599

CPC分类号： C04B35/5935

摘要： Silicon nitride sintered bodies consisting of prismatic crystal grains of Si.sub.3 N.sub.4 and/or sialon, equi-axed crystal grains of Si.sub.3 N.sub.4 and/or sialon, a grain boundary phase existing among the prismatic and equi-axed crystal grains and dispersed particles in the grain boundary phase, in which the prismatic crystal grains have an average grain size of 0.3 .mu.m or less in minor axis and an average grain size of 5 .mu.m or less in major axis, the equi-axed crystal grains have an average grain size of 0.5 .mu.m or less and the dispersed particles have an average size of 0.1 .mu.m or less, the volume of the dispersed particles being 0.05% by volume or more based on the total volume of the rest of the sintered body. The silicon nitride sintered bodies have a strength sufficient for use as structural materials of machine parts or members, with a minimized scattering of the strength as well as high reliability, superior productivity and advantageous production cost.

摘要翻译： 由Si 3 N 4和/或赛隆的棱柱状晶粒构成的氮化硅烧结体，Si 3 N 4等离子晶粒和/或赛隆，棱晶相和等轴晶粒中存在的晶界相和晶界相中的分散粒子 其中棱柱晶粒的短轴平均粒径为0.3μm以下，长轴的平均粒径为5μm以下，等轴晶粒的平均粒径为0.5μm m以下，分散粒子的平均粒径为0.1μm以下，相对于烧结体的其余部分的总体积，分散粒子的体积为0.05体积％以上。 氮化硅烧结体具有足以用作机械部件或部件的结构材料的强度，其强度的极小散射以及高可靠性，优异的生产率和有利的生产成本。

公开(公告)号：US08962365B2

公开(公告)日：2015-02-24

申请号：US13696873

申请日：2011-12-21

申请人： Issei Satoh ,  Yuki Seki ,  Koji Uematsu ,  Yoshiyuki Yamamoto ,  Hideki Matsubara ,  Shinsuke Fujiwara ,  Masashi Yoshimura

发明人： Issei Satoh ,  Yuki Seki ,  Koji Uematsu ,  Yoshiyuki Yamamoto ,  Hideki Matsubara ,  Shinsuke Fujiwara ,  Masashi Yoshimura

IPC分类号： H01L21/00 ,  H01L21/02 ,  C30B23/02 ,  C30B25/18 ,  C30B29/40

CPC分类号： H01L21/0254 ,  C03C10/0018 ,  C04B35/106 ,  C04B35/16 ,  C04B35/185 ,  C04B35/481 ,  C04B35/486 ,  C04B35/488 ,  C04B35/645 ,  C04B35/6455 ,  C04B2235/3225 ,  C04B2235/3244 ,  C04B2235/3246 ,  C04B2235/3463 ,  C04B2235/9607 ,  C30B23/025 ,  C30B25/183 ,  C30B29/406 ,  H01L21/02002 ,  H01L21/02422 ,  H01L21/02436 ,  H01L21/02458 ,  H01L21/02658 ,  H01L21/02664

摘要： The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate including a support substrate dissoluble in hydrofluoric acid and a single crystal film arranged on a side of a main surface of the support substrate, a coefficient of thermal expansion in the main surface of the support substrate being more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal, forming a GaN-based film on a main surface of the single crystal film arranged on the side of the main surface of the support substrate, and removing the support substrate by dissolving the support substrate in hydrofluoric acid. Thus, the method of manufacturing a GaN-based film capable of efficiently obtaining a GaN-based film having a large main surface area, less warpage, and good crystallinity, as well as a composite substrate used therefor are provided.

摘要翻译： 本发明的制造GaN基膜的方法包括以下步骤：制备复合基板，该复合基板包括可溶于氢氟酸的支撑基板和布置在支撑基板的主表面侧的单晶膜，热膨胀系数 支撑基板的主表面比GaN晶体大0.8倍以上且小于热膨胀系数的1.2倍，在配置在该基板侧的单晶膜的主面上形成GaN基膜 支撑基板的主表面，并且通过将支撑基板溶解在氢氟酸中来除去支撑基板。 因此，提供了能够有效地获得具有较大主表面积，较少翘曲和良好结晶度的GaN基膜的GaN基膜的制造方法以及用于其的复合基板。

公开(公告)号：US08697550B2

公开(公告)日：2014-04-15

申请号：US13643206

申请日：2011-11-10

申请人： Issei Satoh ,  Yuki Seki ,  Koji Uematsu ,  Yoshiyuki Yamamoto ,  Hideki Matsubara ,  Shinsuke Fujiwara ,  Masashi Yoshimura

发明人： Issei Satoh ,  Yuki Seki ,  Koji Uematsu ,  Yoshiyuki Yamamoto ,  Hideki Matsubara ,  Shinsuke Fujiwara ,  Masashi Yoshimura

IPC分类号： H01L21/20

CPC分类号： H01L33/007 ,  H01L21/76256 ,  H01L33/0079

摘要： The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in a main surface is more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a side of the main surface of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage is provided.

摘要翻译： 本发明的制造GaN基膜的方法包括以下步骤：制备复合基板，该复合基板包括主表面的热膨胀系数大于0.8倍且小于1.2倍的支撑基板 GaN晶体沿轴向的热膨胀系数和布置在支撑基板的主表面侧的单晶膜，单晶膜相对于垂直于主表面的轴线具有三重对称性 单晶膜，并且在复合衬底中的单晶膜的主表面上形成GaN基膜。 因此，提供了一种制造能够制造具有大的主表面积和较少翘曲的GaN基膜的GaN基膜的方法。

公开(公告)号：US08673796B2

公开(公告)日：2014-03-18

申请号：US13262311

申请日：2010-03-31

申请人： Masashi Yoshimura ,  Masaki Fukuma ,  Yutaka Tsuji ,  Shigeru Nakayama

发明人： Masashi Yoshimura ,  Masaki Fukuma ,  Yutaka Tsuji ,  Shigeru Nakayama

IPC分类号： C04B35/00

CPC分类号： C04B35/443 ,  C04B35/62635 ,  C04B35/63416 ,  C04B35/63448 ,  C04B35/63488 ,  C04B2235/658 ,  C04B2235/6581 ,  C04B2235/661 ,  C04B2235/77 ,  C04B2235/96 ,  C04B2235/9653

摘要： To provide a light-transmitting window material made of a spinel sintered body, wherein the largest diameter of pores contained in the light-transmitting window material is not more than 100 μm, and the number of pores having a largest diameter of not less than 10 μm is not more than 2.0 per 1 cm3 of the light-transmitting window material, and wherein light scattering factors are further reduced, and a method for producing a spinel light-transmitting window material including the steps of preparing a spinel molded body; a primary sintering step of sintering the spinel molded body at normal pressure or less or in a vacuum at a temperature in the range of 1500 to 1900° C.; and a secondary sintering step of sintering the spinel molded body under pressure at a temperature in the range of 1500 to 2000° C., wherein the relative density of the spinel molded body after the primary sintering step is 95 to 96% and the relative density of the spinel molded body after the secondary sintering step is 99.8% or more.

摘要翻译： 为了提供由尖晶石烧结体制成的透光窗材料，其中包含在透光窗材料中的最大直径的孔不大于100μm，并且具有最大直径不小于10的孔数 每1cm 3的透光窗材料的母体不超过2.0，进一步减少光散射因子，以及包括制备尖晶石成型体的尖晶石透光窗材料的方法。 在1500〜1900℃的温度下，在常压或以下或真空中烧结尖晶石成型体的一次烧结工序。 以及二次烧结工序，在1500〜2000℃的温度范围内的压力下烧结尖晶石成形体，其中，一次烧结工序后的尖晶石成型体的相对密度为95〜96％，相对密度 的二次烧结步骤后的尖晶石成型体为99.8％以上。

公开(公告)号：US20130040442A1

公开(公告)日：2013-02-14

申请号：US13643206

申请日：2011-11-10

申请人： Issei Satoh ,  Yuki Seki ,  Koji Uematsu ,  Yoshiyuki Yamamoto ,  Hideki Matsubara ,  Shinsuke Fujiwara ,  Masashi Yoshimura

发明人： Issei Satoh ,  Yuki Seki ,  Koji Uematsu ,  Yoshiyuki Yamamoto ,  Hideki Matsubara ,  Shinsuke Fujiwara ,  Masashi Yoshimura

IPC分类号： H01L21/20

CPC分类号： H01L33/007 ,  H01L21/76256 ,  H01L33/0079

摘要： The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in a main surface is more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a side of the main surface of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage is provided.

摘要翻译： 本发明的制造GaN基膜的方法包括以下步骤：制备复合基板，该复合基板包括主表面的热膨胀系数大于0.8倍且小于1.2倍的支撑基板 GaN晶体沿轴向的热膨胀系数和布置在支撑基板的主表面侧的单晶膜，单晶膜相对于垂直于主表面的轴线具有三重对称性 单晶膜，并且在复合衬底中的单晶膜的主表面上形成GaN基膜。 因此，提供了一种制造能够制造具有大的主表面积和较少翘曲的GaN基膜的GaN基膜的方法。

公开(公告)号：US20120093713A1

公开(公告)日：2012-04-19

申请号：US13262311

申请日：2010-03-31

申请人： Masashi Yoshimura ,  Masaki Fukuma ,  Yutuka Tsuji ,  Shigiru Nakayama

发明人： Masashi Yoshimura ,  Masaki Fukuma ,  Yutuka Tsuji ,  Shigiru Nakayama

IPC分类号： C01F7/02 ,  C04B35/64

CPC分类号： C04B35/443 ,  C04B35/62635 ,  C04B35/63416 ,  C04B35/63448 ,  C04B35/63488 ,  C04B2235/658 ,  C04B2235/6581 ,  C04B2235/661 ,  C04B2235/77 ,  C04B2235/96 ,  C04B2235/9653

摘要： To provide a light-transmitting window material made of a spinel sintered body, wherein the largest diameter of pores contained in the light-transmitting window material is not more than 100 μm, and the number of pores having a largest diameter of not less than 10 μm is not more than 2.0 per 1 cm3 of the light-transmitting window material, and wherein light scattering factors are further reduced, and a method for producing a spinel light-transmitting window material including the steps of preparing a spinel molded body; a primary sintering step of sintering the spinel molded body at normal pressure or less or in a vacuum at a temperature in the range of 1500 to 1900° C.; and a secondary sintering step of sintering the spinel molded body under pressure at a temperature in the range of 1500 to 2000° C., wherein the relative density of the spinel molded body after the primary sintering step is 95 to 96% and the relative density of the spinel molded body after the secondary sintering step is 99.8% or more.

摘要翻译： 为了提供一种由尖晶石烧结体制成的透光窗材料，其中包含在透光窗材料中的最大直径的孔不大于100μm，并且具有最大直径不小于10的孔数 μm为1cm 3以下的透光窗材料不超过2.0，进一步减少光散射因子，以及包括制备尖晶石成型体的尖晶石透光窗材料的方法。 在1500〜1900℃的温度下，在常压或以下或真空中烧结尖晶石成型体的一次烧结工序。 以及二次烧结工序，在1500〜2000℃的温度范围内的压力下烧结尖晶石成形体，其中，一次烧结工序后的尖晶石成型体的相对密度为95〜96％，相对密度 的二次烧结步骤后的尖晶石成型体为99.8％以上。

公开(公告)号：US20110272734A1

公开(公告)日：2011-11-10

申请号：US13144696

申请日：2009-11-11

申请人： Akihiro Hachigo ,  Takao Nakamura ,  Masashi Yoshimura

发明人： Akihiro Hachigo ,  Takao Nakamura ,  Masashi Yoshimura

IPC分类号： H01L33/30

CPC分类号： C30B25/18 ,  C30B29/403 ,  H01L33/007

摘要： The present invention is a minimal-defect light-emitting device substrate that enables emitted light to issue from a device's substrate side, and is a light-emitting device 100 substrate furnished with a transparent substrate 10 that is transparent to light of wavelengths between 400 nm and 600 nm, inclusive, and a nitride-based compound semiconductor thin film 1c formed onto one of the major surfaces of the transparent substrate 10 by a join. Letting the thermal expansion coefficient of the transparent substrate along a direction perpendicular to the major surface of the transparent substrate be α1, and the thermal expansion coefficient of the nitride-based compound semiconductor thin film be α2, then (α1−α2)/α2 is between −0.5 and 1.0, inclusive, and at up to 1200° C. the transparent substrate does not react with the nitride-based compound semiconductor thin film 1c. The absolute index of refraction of the transparent substrate 10 preferably is between 60% and 140%, inclusive, of the absolute index of refraction of the nitride-based compound semiconductor thin film.

摘要翻译： 本发明是一种使发射光能够从器件的衬底侧发出的最小缺陷发光器件衬底，并且是配备透明衬底10的发光器件100衬底，透明衬底10对波长在400nm之间的光是透明的 和600nm，以及通过接合形成在透明基板10的一个主表面上的氮化物系化合物半导体薄膜1c。 使透明基板沿着与透明基板的主面垂直的方向的热膨胀系数为α1，氮化物系化合物半导体薄膜的热膨胀系数为α2，则α1-α2/α2为 在-0.5和1.0之间，并且在高达1200℃下，透明衬底不与氮化物基化合物半导体薄膜1c反应。 透明基板10的绝对折射率优选在氮化物系化合物半导体薄膜的绝对折射率的60％〜140％的范围内。

公开(公告)号：US20100252950A1

公开(公告)日：2010-10-07

申请号：US12743778

申请日：2008-11-21

申请人： Masashi Yoshimura ,  Akihito Fujii ,  Shigeru Nakayama

发明人： Masashi Yoshimura ,  Akihito Fujii ,  Shigeru Nakayama

IPC分类号： C04B41/81

CPC分类号： C04B41/87 ,  C04B35/443 ,  C04B41/009 ,  C04B41/4529 ,  C04B2111/80 ,  G02F1/1303 ,  G02F2201/38 ,  C04B41/5055 ,  C04B41/5027 ,  C04B41/5041 ,  C04B35/00

摘要： There is provided a method of producing a polycrystalline transparent ceramic substrate used in a transparent substrate or the like for a liquid crystal projector. The method of producing a polycrystalline transparent ceramic substrate is characterized in comprising a step for sintering a ceramic body molded into a predetermined shape and producing a polycrystalline transparent ceramic sintered body, a step for cutting the polycrystalline transparent ceramic sintered body and producing a plurality of polycrystalline transparent ceramic cut bodies, a step for polishing the cut surfaces of the polycrystalline transparent ceramic cut bodies and producing polycrystalline transparent ceramic polished bodies, and a step for applying an antireflection coating to the polycrystalline transparent ceramic polished bodies and producing coated polycrystalline transparent ceramic bodies.

摘要翻译： 提供一种用于液晶投影仪的透明基板等中使用的多晶透明陶瓷基板的制造方法。 多晶透明陶瓷基板的制造方法的特征在于，包括将模制成规定形状的陶瓷体烧结并制造多晶透明陶瓷烧结体的工序，切断多晶透明陶瓷烧结体的工序，制造多个多晶体 透明陶瓷切割体，用于抛光多晶透明陶瓷切割体的切割表面并制造多晶透明陶瓷抛光体的步骤，以及将抗反射涂层施加到多晶透明陶瓷抛光体并制造涂覆的多晶透明陶瓷体的步骤。