公开(公告)号：US08658517B2

公开(公告)日：2014-02-25

申请号：US13643206

申请日：2011-11-10

申请人： Issei Satoh ,  Yuki Seki ,  Koji Uematsu ,  Yoshiyuki Yamamoto ,  Hideki Matsubara ,  Shinsuke Fujiwara ,  Masashi Yoshimura

发明人： Issei Satoh ,  Yuki Seki ,  Koji Uematsu ,  Yoshiyuki Yamamoto ,  Hideki Matsubara ,  Shinsuke Fujiwara ,  Masashi Yoshimura

IPC分类号： H01L21/20

摘要： The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in a main surface is more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a side of the main surface of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage is provided.

公开(公告)号：US08962365B2

公开(公告)日：2015-02-24

申请号：US13696873

申请日：2011-12-21

申请人： Issei Satoh ,  Yuki Seki ,  Koji Uematsu ,  Yoshiyuki Yamamoto ,  Hideki Matsubara ,  Shinsuke Fujiwara ,  Masashi Yoshimura

发明人： Issei Satoh ,  Yuki Seki ,  Koji Uematsu ,  Yoshiyuki Yamamoto ,  Hideki Matsubara ,  Shinsuke Fujiwara ,  Masashi Yoshimura

IPC分类号： H01L21/00 ,  H01L21/02 ,  C30B23/02 ,  C30B25/18 ,  C30B29/40

CPC分类号： H01L21/0254 ,  C03C10/0018 ,  C04B35/106 ,  C04B35/16 ,  C04B35/185 ,  C04B35/481 ,  C04B35/486 ,  C04B35/488 ,  C04B35/645 ,  C04B35/6455 ,  C04B2235/3225 ,  C04B2235/3244 ,  C04B2235/3246 ,  C04B2235/3463 ,  C04B2235/9607 ,  C30B23/025 ,  C30B25/183 ,  C30B29/406 ,  H01L21/02002 ,  H01L21/02422 ,  H01L21/02436 ,  H01L21/02458 ,  H01L21/02658 ,  H01L21/02664

摘要： The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate including a support substrate dissoluble in hydrofluoric acid and a single crystal film arranged on a side of a main surface of the support substrate, a coefficient of thermal expansion in the main surface of the support substrate being more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal, forming a GaN-based film on a main surface of the single crystal film arranged on the side of the main surface of the support substrate, and removing the support substrate by dissolving the support substrate in hydrofluoric acid. Thus, the method of manufacturing a GaN-based film capable of efficiently obtaining a GaN-based film having a large main surface area, less warpage, and good crystallinity, as well as a composite substrate used therefor are provided.

摘要翻译： 本发明的制造GaN基膜的方法包括以下步骤：制备复合基板，该复合基板包括可溶于氢氟酸的支撑基板和布置在支撑基板的主表面侧的单晶膜，热膨胀系数 支撑基板的主表面比GaN晶体大0.8倍以上且小于热膨胀系数的1.2倍，在配置在该基板侧的单晶膜的主面上形成GaN基膜 支撑基板的主表面，并且通过将支撑基板溶解在氢氟酸中来除去支撑基板。 因此，提供了能够有效地获得具有较大主表面积，较少翘曲和良好结晶度的GaN基膜的GaN基膜的制造方法以及用于其的复合基板。

公开(公告)号：US08697550B2

公开(公告)日：2014-04-15

申请号：US13643206

申请日：2011-11-10

申请人： Issei Satoh ,  Yuki Seki ,  Koji Uematsu ,  Yoshiyuki Yamamoto ,  Hideki Matsubara ,  Shinsuke Fujiwara ,  Masashi Yoshimura

发明人： Issei Satoh ,  Yuki Seki ,  Koji Uematsu ,  Yoshiyuki Yamamoto ,  Hideki Matsubara ,  Shinsuke Fujiwara ,  Masashi Yoshimura

IPC分类号： H01L21/20

CPC分类号： H01L33/007 ,  H01L21/76256 ,  H01L33/0079

摘要： The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in a main surface is more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a side of the main surface of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage is provided.

摘要翻译： 本发明的制造GaN基膜的方法包括以下步骤：制备复合基板，该复合基板包括主表面的热膨胀系数大于0.8倍且小于1.2倍的支撑基板 GaN晶体沿轴向的热膨胀系数和布置在支撑基板的主表面侧的单晶膜，单晶膜相对于垂直于主表面的轴线具有三重对称性 单晶膜，并且在复合衬底中的单晶膜的主表面上形成GaN基膜。 因此，提供了一种制造能够制造具有大的主表面积和较少翘曲的GaN基膜的GaN基膜的方法。

公开(公告)号：US20130040442A1

公开(公告)日：2013-02-14

申请号：US13643206

申请日：2011-11-10

申请人： Issei Satoh ,  Yuki Seki ,  Koji Uematsu ,  Yoshiyuki Yamamoto ,  Hideki Matsubara ,  Shinsuke Fujiwara ,  Masashi Yoshimura

发明人： Issei Satoh ,  Yuki Seki ,  Koji Uematsu ,  Yoshiyuki Yamamoto ,  Hideki Matsubara ,  Shinsuke Fujiwara ,  Masashi Yoshimura

IPC分类号： H01L21/20

CPC分类号： H01L33/007 ,  H01L21/76256 ,  H01L33/0079

摘要： The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in a main surface is more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a side of the main surface of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage is provided.

摘要翻译： 本发明的制造GaN基膜的方法包括以下步骤：制备复合基板，该复合基板包括主表面的热膨胀系数大于0.8倍且小于1.2倍的支撑基板 GaN晶体沿轴向的热膨胀系数和布置在支撑基板的主表面侧的单晶膜，单晶膜相对于垂直于主表面的轴线具有三重对称性 单晶膜，并且在复合衬底中的单晶膜的主表面上形成GaN基膜。 因此，提供了一种制造能够制造具有大的主表面积和较少翘曲的GaN基膜的GaN基膜的方法。

公开(公告)号：US20130149847A1

公开(公告)日：2013-06-13

申请号：US13696873

申请日：2011-12-21

申请人： Issei Satoh ,  Yuki Seki ,  Koji Uematsu ,  Yoshiyuki Yamamoto ,  Hideki Matsubara ,  Shinsuke Fujiwara ,  Masashi Yoshimura

发明人： Issei Satoh ,  Yuki Seki ,  Koji Uematsu ,  Yoshiyuki Yamamoto ,  Hideki Matsubara ,  Shinsuke Fujiwara ,  Masashi Yoshimura

IPC分类号： H01L21/02

CPC分类号： H01L21/0254 ,  C03C10/0018 ,  C04B35/106 ,  C04B35/16 ,  C04B35/185 ,  C04B35/481 ,  C04B35/486 ,  C04B35/488 ,  C04B35/645 ,  C04B35/6455 ,  C04B2235/3225 ,  C04B2235/3244 ,  C04B2235/3246 ,  C04B2235/3463 ,  C04B2235/9607 ,  C30B23/025 ,  C30B25/183 ,  C30B29/406 ,  H01L21/02002 ,  H01L21/02422 ,  H01L21/02436 ,  H01L21/02458 ,  H01L21/02658 ,  H01L21/02664

摘要： The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate including a support substrate dissoluble in hydrofluoric acid and a single crystal film arranged on a side of a main surface of the support substrate, a coefficient of thermal expansion in the main surface of the support substrate being more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal, forming a GaN-based film on a main surface of the single crystal film arranged on the side of the main surface of the support substrate, and removing the support substrate by dissolving the support substrate in hydrofluoric acid. Thus, the method of manufacturing a GaN-based film capable of efficiently obtaining a GaN-based film having a large main surface area, less warpage, and good crystallinity, as well as a composite substrate used therefor are provided.

摘要翻译： 本发明的制造GaN基膜的方法包括以下步骤：制备复合基板，该复合基板包括可溶于氢氟酸的支撑基板和布置在支撑基板的主表面侧的单晶膜，热膨胀系数 支撑基板的主表面比GaN晶体大0.8倍以上且小于热膨胀系数的1.2倍，在配置在该基板侧的单晶膜的主面上形成GaN基膜 支撑基板的主表面，并且通过将支撑基板溶解在氢氟酸中来除去支撑基板。 因此，提供了能够有效地获得具有较大主表面积，较少翘曲和良好结晶度的GaN基膜的GaN基膜的制造方法以及用于其的复合基板。

公开(公告)号：US20130168693A1

公开(公告)日：2013-07-04

申请号：US13820599

申请日：2012-02-13

申请人： Issei Satoh ,  Hiroaki Yoshida ,  Yoshiyuki Yamamoto ,  Akihiro Hachigo ,  Hideki Matsubara

发明人： Issei Satoh ,  Hiroaki Yoshida ,  Yoshiyuki Yamamoto ,  Akihiro Hachigo ,  Hideki Matsubara

IPC分类号： H01L29/20 ,  H01L21/02

CPC分类号： H01L29/2003 ,  H01L21/02104 ,  H01L21/76254

摘要： A protective-film-attached composite substrate includes a support substrate, an oxide film disposed on the support substrate, a semiconductor layer disposed on the oxide film, and a protective film protecting the oxide film by covering a portion that is a part of the oxide film and covered with none of the support substrate and the semiconductor layer. A method of manufacturing a semiconductor device includes the steps of: preparing the protective-film-attached composite substrate; and epitaxially growing, on the semiconductor layer of the protective-film-attached composite substrate, at least one functional semiconductor layer causing an essential function of a semiconductor device to be performed. Thus, there are provided a protective-film-attached composite substrate having a large effective region where a high-quality functional semiconductor layer can be epitaxially grown, and a method of manufacturing a semiconductor device in which the protective-film-attached composite substrate is used.

摘要翻译： 保护膜附着复合基板包括支撑基板，设置在支撑基板上的氧化膜，设置在氧化膜上的半导体层，以及通过覆盖作为氧化物的一部分的部分来保护氧化膜的保护膜 并且不覆盖支撑基板和半导体层。 制造半导体器件的方法包括以下步骤：制备保护膜附着复合衬底; 并且在保护膜附着复合衬底的半导体层上外延生长至少一个引起半导体器件的基本功能的功能半导体层。 因此，提供了可以外延生长高品质功能半导体层的具有大的有效区域的保护膜附着复合基板，以及制造其中保护膜附着复合基板的半导体器件的制造方法 用过的。

公开(公告)号：US20130032928A1

公开(公告)日：2013-02-07

申请号：US13641582

申请日：2011-11-07

申请人： Issei Satoh ,  Hiroaki Yoshida ,  Yoshiyuki Yamamoto ,  Akihiro Hachigo ,  Hideki Matsubara

发明人： Issei Satoh ,  Hiroaki Yoshida ,  Yoshiyuki Yamamoto ,  Akihiro Hachigo ,  Hideki Matsubara

IPC分类号： H01L29/20

CPC分类号： H01L21/76254 ,  H01L21/0242 ,  H01L21/02488 ,  H01L21/0254

摘要： A group III nitride composite substrate includes a support substrate, an oxide film formed on the support substrate, and a group III nitride layer formed on the oxide film. The oxide film may be a film selected from the group consisting of a TiO2 film and a SrTiO3 film, and an impurity may be added to the oxide film. Accordingly, the group III nitride composite substrate having a high bonding strength between the support substrate and the group III nitride layer is provided.

摘要翻译： III族氮化物复合衬底包括支撑衬底，形成在支撑衬底上的氧化物膜和形成在氧化物膜上的III族氮化物层。 氧化物膜可以是选自TiO 2膜和SrTiO 3膜的膜，并且可以向氧化物膜中添加杂质。 因此，提供了在支撑基板和III族氮化物层之间具有高结合强度的III族氮化物复合基板。

公开(公告)号：US20130137220A1

公开(公告)日：2013-05-30

申请号：US13814037

申请日：2012-03-26

申请人： Hideki Matsubara ,  Kuniaki Ishihara

发明人： Hideki Matsubara ,  Kuniaki Ishihara

IPC分类号： H01L21/50

CPC分类号： H01L21/50 ,  H01L21/187 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L33/0079 ,  H01L2224/03002 ,  H01L2224/0401 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/0603 ,  H01L2224/13144 ,  H01L2224/16225 ,  H01L2224/81005 ,  H01L2924/1033 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/351 ,  H01L2924/00

摘要： A method of manufacturing a GaN-based semiconductor device includes the steps of: preparing a composite substrate including: a support substrate having a thermal expansion coefficient at a ratio of not less than 0.8 and not more than 1.2 relative to a thermal expansion coefficient of GaN; and a GaN layer bonded to the support substrate, using an ion implantation separation method; growing at least one GaN-based semiconductor layer on the GaN layer of the composite substrate; and removing the support substrate of the composite substrate by dissolving the support substrate. Thus, the method of manufacturing a GaN-based semiconductor device is provided by which GaN-based semiconductor devices having excellent characteristics can be manufactured at a high yield ratio.

摘要翻译： 制造GaN基半导体器件的方法包括以下步骤：制备复合衬底，该复合衬底包括：热膨胀系数相对于GaN的热膨胀系数不小于0.8且不大于1.2的支撑衬底 ; 以及使用离子注入分离方法结合到所述支撑衬底的GaN层; 在复合衬底的GaN层上生长至少一个GaN基半导体层; 以及通过溶解所述支撑基板来移除所述复合基板的所述支撑基板。 因此，提供了制造GaN基半导体器件的方法，通过其可以以高屈服比制造具有优异特性的GaN基半导体器件。

公开(公告)号：US08155163B2

公开(公告)日：2012-04-10

申请号：US12531855

申请日：2008-01-29

申请人： Hirohisa Saito ,  Hideki Matsubara

发明人： Hirohisa Saito ,  Hideki Matsubara

IPC分类号： H01S5/00

CPC分类号： H01S5/18 ,  B82Y20/00 ,  H01L2224/48091 ,  H01L2224/48463 ,  H01S5/0206 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/0425 ,  H01S5/105 ,  H01S5/2009 ,  H01S5/34333 ,  H01L2924/00014

摘要： A photonic crystal laser comprises an n-type substrate, an n-type clad layer, an active layer, a p-type clad layer, a photonic crystal layer, a p-type electrode, an n-type electrode and a package member. The n-type clad layer is formed on a first surface of the n-type substrate. The active layer is formed on the n-type clad layer. The p-type clad layer is formed on the active layer. The photonic crystal layer is formed between the n-type clad layer and the active layer or between the active layer and the p-type clad layer, and includes a photonic crystal portion. The p-type electrode is formed on the photonic crystal portion. The n-type electrode is formed on a second surface, and includes a light-transmitting portion arranged on a position opposed to the photonic crystal portion and an outer peripheral portion having lower light transmittance than the light-transmitting portion.

摘要翻译： 光子晶体激光器包括n型衬底，n型覆盖层，有源层，p型覆盖层，光子晶体层，p型电极，n型电极和封装构件。 n型覆盖层形成在n型衬底的第一表面上。 有源层形成在n型覆层上。 p型覆盖层形成在有源层上。 光子晶体层形成在n型覆盖层与有源层之间或者在有源层与p型覆盖层之间，并且包括光子晶体部分。 p型电极形成在光子晶体部分上。 n型电极形成在第二表面上，并且包括布置在与光子晶体部分相对的位置的透光部分和具有比透光部分低的透光率的外周部分。

公开(公告)号：US06420731B1

公开(公告)日：2002-07-16

申请号：US09603855

申请日：2000-06-26

申请人： Koji Katayama ,  Hideki Matsubara ,  Akihiko Saegusa

发明人： Koji Katayama ,  Hideki Matsubara ,  Akihiko Saegusa

IPC分类号： H01L2715

CPC分类号： H01L33/40 ,  H01L33/28 ,  H01L33/42

摘要： An injected current restriction region for restricting an increase in defects by restricting an injected current for light emission is provided inside a ZnSe-based LED. When an end of a light transmitting Au electrode is separated from a cleavage plane, a region near the cleavage plane serves as the injected current restriction region.

摘要翻译： 在ZnSe基LED内部设置用于通过限制用于发光的注入电流来限制缺陷增加的注入电流限制区域。 当透光性Au电极的端部与解理面分离时，解理面附近的区域成为注入电流限制区域。