公开(公告)号：US20230132660A1

公开(公告)日：2023-05-04

申请号：US17514815

申请日：2021-10-29

Applicant: Tokyo Electron Limited

Inventor： Chelsea Dubose ,  Barton Lane ,  Merritt Funk ,  Justin Moses ,  Yohei Yamazawa

IPC: H01J37/32 ,  H01Q13/18 ,  H01Q1/38 ,  H01Q7/00

Abstract: A radio frequency (RF) system including: a first conductive covering surface, a portion of the first conductive covering surface including a portion of the first outer wall of a first RF device; a second conductive covering surface aligned to the first conductive covering surface, the second conductive covering surface being disposed around the insulating hole; an insulating hole for an RF center conductor extending through the first conductive covering surface and the second conductive covering surface, the first conductive covering surface and the second conductive covering surface being disposed around the insulating hole; a cavity bounded by the first conductive covering surface and the second conductive covering surface, the cavity being an insulating region; and an RF signal pickup disposed within the cavity.

公开(公告)号：US11600474B2

公开(公告)日：2023-03-07

申请号：US16913526

申请日：2020-06-26

Applicant: Tokyo Electron Limited

Inventor： Barton Lane ,  Merritt Funk ,  Yohei Yamazawa ,  Justin Moses ,  Chelsea Dubose ,  Michael Hummel

IPC: H01J37/32 ,  H01J37/24

Abstract: A radio frequency (RF) system includes a RF power source configured to power a load with an RF signal; an RF pipe including an inner conductor and an outer conductor connected to ground coupling the RF power source to the load; and a current sensor aligned to a central axis of the RF pipe carrying the RF signal. A sensor casing is disposed around the RF pipe, where the sensor casing includes a conductive material connected to the outer conductor of the RF pipe. A gallery is disposed within the sensor casing and outside the outer conductor of the RF pipe, where the current sensor is disposed in the gallery. A slit in the outer conductor of the RF pipe exposes the current sensor to a magnetic field due to the current of the RF signal in the inner conductor of the RF pipe.

公开(公告)号：US20210407770A1

公开(公告)日：2021-12-30

申请号：US16913545

申请日：2020-06-26

Applicant: Tokyo Electron Limited

Inventor： Justin Moses ,  Barton Lane ,  Merritt Funk ,  Chelsea Dubose ,  Yohei Yamazawa ,  Michael Hummel

IPC: H01J37/32 ,  G01R29/08

Abstract: A radio frequency sensor assembly includes a sensor casing disposed around a central hole, the sensor casing including a first conductive cover and a second conductive cover. The assembly includes a cavity disposed around the central hole and includes a dielectric material, the cavity being bounded by a first major outer surface and a second major outer surface along a radial direction from a center of the central hole, where the first conductive cover is electrically coupled to the second conductive cover through a coupling region beyond the second major outer surface of the cavity, and electrically insulated from the second conductive cover by the cavity and the central hole. The assembly includes a current sensor electrically insulated from the sensor casing and including a current pickup disposed symmetrically around the central hole, the current pickup being disposed within the cavity and being insulated from the sensor casing.

公开(公告)号：US10796916B2

公开(公告)日：2020-10-06

申请号：US15941901

申请日：2018-03-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Merritt Funk ,  Jianping Zhao ,  Lee Chen

IPC: H01J37/32 ,  H01L21/268

Abstract: A processing system is disclosed, having a power transmission element with an interior cavity that propagates electromagnetic energy proximate to a continuous slit in the interior cavity. The continuous slit forms an opening between the interior cavity and a substrate processing chamber. The electromagnetic energy may generate an alternating charge in the continuous slit that enables the generation of an electric field that may propagate into the processing chamber. The electromagnetic energy may be conditioned prior to entering the interior cavity to improve uniformity or stability of the electric field. The conditioning may include, but is not limited to, phase angle, field angle, and number of feeds into the interior cavity.

公开(公告)号：US10510512B2

公开(公告)日：2019-12-17

申请号：US15880435

申请日：2018-01-25

Applicant: Tokyo Electron Limited

Inventor： Merritt Funk ,  Megan Doppel ,  Kazuki Moyama ,  Chelsea DuBose ,  Justin Moses

IPC: H01J37/32 ,  H01L21/3065

Abstract: Embodiments of method and system for controlling plasma performance are described. In an embodiment a method may include supplying power at a first set of power parameters to a plasma chamber. Additionally, the method may include forming plasma within the plasma chamber using the first set of power parameters. The method may also include measuring power coupling to the plasma at the first set of power parameters. Also, the method may include supplying power at a second set of power parameters to the plasma chamber. The method may additionally include measuring power coupling to the plasma at the second set of power parameters to the plasma. The method may also include adjusting the first set of power parameters based, at least in part, on the measuring of the power coupling at the second set of power parameters.

公开(公告)号：US09941126B2

公开(公告)日：2018-04-10

申请号：US14309090

申请日：2014-06-19

Applicant: Tokyo Electron Limited

Inventor： Merritt Funk ,  Jianping Zhao ,  Lee Chen

IPC: H01L21/268 ,  H01J37/32

CPC classification number: H01L21/268 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/32266

Abstract: A processing system is disclosed, having a power transmission element with an interior cavity that propagates electromagnetic energy proximate to a continuous slit in the interior cavity. The continuous slit forms an opening between the interior cavity and a substrate processing chamber. The electromagnetic energy may generate an alternating charge in the continuous slit that enables the generation of an electric field that may propagate into the processing chamber. The electromagnetic energy may be conditioned prior to entering the interior cavity to improve uniformity or stability of the electric field. The conditioning may include, but is not limited to, phase angle, field angle, and number of feeds into the interior cavity.

公开(公告)号：US09799494B2

公开(公告)日：2017-10-24

申请号：US15088930

申请日：2016-04-01

Applicant: Tokyo Electron Limited

Inventor： Lee Chen ,  Merritt Funk

IPC: H01J37/32 ,  H01L21/3065 ,  C23C16/515 ,  C23C16/517

CPC classification number: H01J37/32596 ,  C23C16/515 ,  C23C16/517 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32467 ,  H01L21/3065

Abstract: A processing method and system are provided for processing a substrate with a plasma in the presence of an electro-negative gas. A processing gas is injected into a processing chamber. The gas includes a high electron affinity gas species. A surface is provided in the plasma chamber onto which the gas species has a tendency to chemisorb. The gas species is exposed to the surface, chemisorbed onto it, and the surface is exposed to energy that causes negative ions of the chemisorbed gas species, that interact in the plasma to release secondary electrons. A neutralizer grid may be provided to separate from the chamber a second chamber in which forms a low energy secondary plasma for processing the substrate that is dense in electrons and contains high energy neutrals of the gas species and high energy positive ions of processing gas. Pulsed energy may be used to excite plasma or bias the substrate. A hollow cathode source is also provided.

公开(公告)号：US20160293386A1

公开(公告)日：2016-10-06

申请号：US15088930

申请日：2016-04-01

Applicant: Tokyo Electron Limited

Inventor： Lee Chen ,  Merritt Funk

IPC: H01J37/32

CPC classification number: H01J37/32596 ,  C23C16/515 ,  C23C16/517 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32467 ,  H01L21/3065

Abstract: A processing method and system are provided for processing a substrate with a plasma in the presence of an electro-negative gas. A processing gas is injected into a processing chamber. The gas includes a high electron affinity gas species. A surface is provided in the plasma chamber onto which the gas species has a tendency to chemisorb. The gas species is exposed to the surface, chemisorbed onto it, and the surface is exposed to energy that causes negative ions of the chemisorbed gas species, that interact in the plasma to release secondary electrons. A neutralizer grid may be provided to separate from the chamber a second chamber in which forms a low energy secondary plasma for processing the substrate that is dense in electrons and contains high energy neutrals of the gas species and high energy positive ions of processing gas. Pulsed energy may be used to excite plasma or bias the substrate. A hollow cathode source is also provided.

Abstract translation: 提供一种处理方法和系统，用于在存在电负气体的情况下用等离子体处理衬底。 处理气体被注入到处理室中。 气体包括高电子亲和气体种类。 在等离子体室中设置表面，气体种类具有化学吸附的倾向。 气体物质暴露于表面，化学吸附到其上，并且表面暴露于引起化学吸附气体物质的负离子的能量，其在等离子体中相互作用以释放二次电子。 可以提供中和器栅格以与室隔开第二室，其中形成用于处理电子致密的基板的低能二次等离子体，并且包含处理气体的气体种类和高能正离子的高能中性物质。 脉冲能量可用于激发等离子体或偏置衬底。 还提供了一种空心阴极源。

公开(公告)号：US09301383B2

公开(公告)日：2016-03-29

申请号：US13829959

申请日：2013-03-14

Applicant: Tokyo Electron Limited

Inventor： Jianping Zhao ,  Lee Chen ,  Merritt Funk ,  Radha Sundararajan

IPC: H01L21/302 ,  H01L21/461 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H05H1/46 ,  H01F41/06 ,  H01L21/3065 ,  H01J37/32

CPC classification number: H05H1/46 ,  C23F1/00 ,  H01F41/06 ,  H01J37/32192 ,  H01J37/3222 ,  H01L21/3065 ,  Y10T29/49016

Abstract: A surface wave plasma (SWP) source couples microwave (MW) energy into a processing chamber through, for example, a radial line slot antenna, to result in a low mean electron energy (Te). An ICP source, is provided between the SWP source and the substrate and is energized at a low power, less than 100 watts for 300 mm wafers, for example, at about 25 watts. The ICP source couples energy through a peripheral electric dipole coil to reduce capacitive coupling.

Abstract translation: 表面波等离子体（SWP）源通过例如径向线缝隙天线将微波（MW）能量耦合到处理室中，以产生较低的平均电子能量（Te）。 ICP源设置在SWP源和衬底之间，并以低功率通电，对于300mm晶片，例如在约25瓦特，小于100瓦特。 ICP源通过外围电偶极线圈耦合能量以减少电容耦合。

公开(公告)号：US09111873B2

公开(公告)日：2015-08-18

申请号：US14054902

申请日：2013-10-16

Applicant: Tokyo Electron Limited

Inventor： Lee Chen ,  Jianping Zhao ,  Merritt Funk ,  Zhiying Chen

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/683 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01J37/32422 ,  H01J37/3266 ,  H01L21/683

Abstract: A plasma processing apparatus includes a processing chamber having a plasma processing space therein and a substrate support in the processing chamber at a first end for supporting a substrate. A plasma source is coupled into the processing space and configured to form a plasma at a second end of the processing chamber opposite said first end. The apparatus further includes a magnetic grid having an intensity of a magnetic flux therein, a plurality of passageways penetrating from a first side to a second side, a thickness, a transparency, a passageway aspect ratio, and a position within the processing chamber between the second end and the substrate. The intensity, the thickness, the transparency, the passageway aspect ratio, and the position are configured to cause electrons having energies above an acceptable maximum level to divert from the direction. A method of obtaining low average electron energy flux onto the substrate is also provided.

Abstract translation: 等离子体处理装置包括其中具有等离子体处理空间的处理室和用于支撑基板的第一端处于处理室中的基板支撑件。 等离子体源耦合到处理空间中并且被配置为在与第一端相对的处理室的第二端处形成等离子体。 该装置还包括具有其中的磁通强度的磁栅格，从第一侧穿透到第二侧的多个通道，厚度，透明度，通道纵横比以及处理室内的位置 第二端和衬底。 强度，厚度，透明度，通道长宽比和位置被配置为使能量高于可接受的最大电平的电子从该方向转移。 还提供了一种在基板上获得低平均电子能量通量的方法。