公开(公告)号：US07323728B2

公开(公告)日：2008-01-29

申请号：US11288117

申请日：2005-11-29

申请人： Toru Sugiyama

发明人： Toru Sugiyama

IPC分类号： H01L29/76

CPC分类号： H01L29/7304 ,  H01L27/0605 ,  H01L29/7371

摘要： Disclosed is a semiconductor device including an n+-type semiconductor layer formed on a substrate, a first n-type semiconductor layer formed on the n+-type semiconductor layer, a p-type semiconductor layer formed on the first n-type semiconductor layer and having a material having a first band gap, a second n-type semiconductor layer formed on the p-type semiconductor layer, being smaller than the p-type semiconductor layer in area and having a material having a second band gap larger than the first band gap, an implant portion formed to penetrate the p-type semiconductor layer, the first n-type semiconductor layer, and the n+-type semiconductor layer in a region where the second n-type semiconductor layer is not formed and to divide these layers into two regions, and an electrode formed on a region of the p-type semiconductor layer where the second n-type semiconductor layer is not formed, so as to bridge over the implant portion.

摘要翻译： 公开了一种半导体器件，包括形成在衬底上的n + +型半导体层，形成在n + +型半导体层上的第一n型半导体层， 形成在第一n型半导体层上并且具有第一带隙的材料的p型半导体层，形成在p型半导体层上的第二n型半导体层小于p型半导体层中的p型半导体层 并且具有比第一带隙大的第二带隙的材料，形成为穿透p型半导体层，第一n型半导体层和n型半导体层的注入部分， 在没有形成第二n型半导体层的区域中形成半导体层，并将这些层分成两个区域，以及形成在第二n型半导体层不是的p型半导体层的区域上的电极 形成，以便桥接在植入部分上。

公开(公告)号：US07247921B2

公开(公告)日：2007-07-24

申请号：US11148331

申请日：2005-06-09

申请人： Masayuki Sugiura ,  Yasuhiko Kuriyama ,  Toru Sugiyama ,  Yoshikazu Tanabe ,  Makoto Shibamiya

发明人： Masayuki Sugiura ,  Yasuhiko Kuriyama ,  Toru Sugiyama ,  Yoshikazu Tanabe ,  Makoto Shibamiya

IPC分类号： H01L29/06

CPC分类号： H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor apparatus includes a semiconductor substrate having a device region and a periphery region surrounding the device region; a semiconductor device provided in the device region of the semiconductor substrate; a first electrode pad provided on the semiconductor substrate; a second electrode pad provided on the semiconductor substrate; a strip-like, first conductivity type semiconductor pattern; and a strip-like, second conductivity type semiconductor pattern. The strip-like, first conductivity type semiconductor pattern extends in the periphery region of the semiconductor substrate, and the first electrode pad is electrically connected to one end of the first conductivity type semiconductor pattern. The strip-like, second conductivity type semiconductor pattern constitutes a p-n junction in conjunction with the first conductivity type semiconductor pattern. The first and second electrode pads are electrically connected to both ends of the second conductivity type semiconductor pattern.

摘要翻译： 半导体装置包括具有器件区域和围绕器件区域的周边区域的半导体衬底; 半导体器件，设置在所述半导体衬底的器件区域中; 设置在所述半导体基板上的第一电极焊盘; 设置在所述半导体衬底上的第二电极焊盘; 带状，第一导电型半导体图案; 和带状的第二导电型半导体图案。 带状第一导电型半导体图案在半导体衬底的周边区域中延伸，并且第一电极焊盘电连接到第一导电类型半导体图案的一端。 带状，第二导电型半导体图案与第一导电型半导体图案一起构成p-n结。 第一和第二电极焊盘电连接到第二导电类型半导体图案的两端。

公开(公告)号：US20060131608A1

公开(公告)日：2006-06-22

申请号：US11288117

申请日：2005-11-29

申请人： Toru Sugiyama

发明人： Toru Sugiyama

IPC分类号： H01L31/109 ,  H01L29/06

CPC分类号： H01L29/7304 ,  H01L27/0605 ,  H01L29/7371

摘要： Disclosed is a semiconductor device including an n+-type semiconductor layer formed on a substrate, a first n-type semiconductor layer formed on the n+-type semiconductor layer, a p-type semiconductor layer formed on the first n-type semiconductor layer and having a material having a first band gap, a second n-type semiconductor layer formed on the p-type semiconductor layer, being smaller than the p-type semiconductor layer in area and having a material having a second band gap larger than the first band gap, an implant portion formed to penetrate the p-type semiconductor layer, the first n-type semiconductor layer, and the n+-type semiconductor layer in a region where the second n-type semiconductor layer is not formed and to divide these layers into two regions, and an electrode formed on a region of the p-type semiconductor layer where the second n-type semiconductor layer is not formed, so as to bridge over the implant portion.

摘要翻译： 公开了一种半导体器件，包括形成在衬底上的n + +型半导体层，形成在n + +型半导体层上的第一n型半导体层， 形成在第一n型半导体层上并且具有第一带隙的材料的p型半导体层，形成在p型半导体层上的第二n型半导体层小于p型半导体层中的p型半导体层 并且具有比第一带隙大的第二带隙的材料，形成为穿透p型半导体层，第一n型半导体层和n型半导体层的注入部分， 在没有形成第二n型半导体层的区域中形成半导体层，并将这些层分成两个区域，以及形成在第二n型半导体层不是的p型半导体层的区域上的电极 形成，以便桥接在植入部分上。

公开(公告)号：US20060081078A1

公开(公告)日：2006-04-20

申请号：US11203702

申请日：2005-08-15

申请人： Shigekazu Nagai ,  Akio Saitoh ,  Toru Sugiyama ,  Masaki Miyahara

发明人： Shigekazu Nagai ,  Akio Saitoh ,  Toru Sugiyama ,  Masaki Miyahara

IPC分类号： F16H27/02

CPC分类号： F16H25/2015 ,  F16H25/2204 ,  F16H2025/2075 ,  Y10T74/18576 ,  Y10T74/1868 ,  Y10T74/18688

摘要： Disclosed is an electric actuator capable of effectively absorbing shock exerted on its component part. The electric actuator has a housing, a rod cover, a piston, a feed screw, a sliding nut, two piston dampers for absorbing shock exerted on the piston, a first end damper attached to one of the opposite ends of the housing, a second end damper attached to the rod cover. The sliding nut is axially displaceable relative to the piston when the piston damper absorbs shock.

摘要翻译： 公开了能够有效地吸收施加在其部件上的冲击的电致动器。 电致动器具有壳体，杆盖，活塞，进给螺杆，滑动螺母，用于吸收施加在活塞上的冲击的两个活塞阻尼器，附接到壳体的相对端中的一个的第一端阻尼器，第二 末端阻尼器连接到杆盖。 当活塞阻尼器吸收冲击时，滑动螺母可相对于活塞轴向移动。

公开(公告)号：US20050275076A1

公开(公告)日：2005-12-15

申请号：US11148331

申请日：2005-06-09

申请人： Masayuki Sugiura ,  Yasuhiko Kuriyama ,  Toru Sugiyama ,  Yoshikazu Tanabe ,  Makoto Shibamiya

发明人： Masayuki Sugiura ,  Yasuhiko Kuriyama ,  Toru Sugiyama ,  Yoshikazu Tanabe ,  Makoto Shibamiya

IPC分类号： H01L21/60 ,  H01L23/495 ,  H01L23/544

CPC分类号： H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor apparatus comprising: a semiconductor substrate having a device region and a periphery region surrounding the device region; a semiconductor device provided in the device region of the semiconductor substrate; a first electrode pad provided on the semiconductor substrate; a second electrode pad provided on the semiconductor substrate; a strip-like, first conductivity type semiconductor pattern; and a strip-like, second conductivity type semiconductor pattern. The strip-like, first conductivity type semiconductor pattern extends in the periphery region of the semiconductor substrate, and the first electrode pad is electrically connected to one end of the first conductivity type semiconductor pattern. The strip-like, second conductivity type semiconductor pattern constitutes a p-n junction in conjunction with the first conductivity type semiconductor pattern. The first and second electrode pads are electrically connected to both ends of the second conductivity type semiconductor pattern.

摘要翻译： 一种半导体装置，包括：半导体衬底，具有围绕所述器件区域的器件区域和周边区域; 半导体器件，设置在所述半导体衬底的器件区域中; 设置在所述半导体基板上的第一电极焊盘; 设置在所述半导体衬底上的第二电极焊盘; 带状，第一导电型半导体图案; 和带状的第二导电型半导体图案。 带状第一导电型半导体图案在半导体衬底的周边区域中延伸，并且第一电极焊盘电连接到第一导电类型半导体图案的一端。 带状，第二导电型半导体图案与第一导电型半导体图案一起构成p-n结。 第一和第二电极焊盘电连接到第二导电类型半导体图案的两端。

公开(公告)号：US06790694B2

公开(公告)日：2004-09-14

申请号：US10281231

申请日：2002-10-28

申请人： Toru Sugiyama ,  Kouhei Morizuka ,  Masayuki Sugiura ,  Yasuhiko Kuriyama ,  Yoshikazu Tanabe

发明人： Toru Sugiyama ,  Kouhei Morizuka ,  Masayuki Sugiura ,  Yasuhiko Kuriyama ,  Yoshikazu Tanabe

IPC分类号： H01L2192

CPC分类号： H01L24/05 ,  H01L21/78 ,  H01L23/488 ,  H01L23/564 ,  H01L23/66 ,  H01L24/03 ,  H01L24/06 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2223/6644 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/484 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/73265 ,  H01L2224/85444 ,  H01L2224/92247 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01031 ,  H01L2924/01047 ,  H01L2924/01067 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/05042 ,  H01L2924/10157 ,  H01L2924/10161 ,  H01L2924/10329 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13063 ,  H01L2924/13064 ,  H01L2924/14 ,  H01L2924/1423 ,  H01L2924/18301 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/01033 ,  H01L2924/00 ,  H01L2924/00012

摘要： A high frequency semiconductor module, includes: a semiconductor chip having top and bottom surfaces; a semiconductor element merged in the semiconductor chip; a ground pad of the semiconductor element disposed on the top surface; a metal layer configured to connect to the ground pad and extend to sidewalls of the semiconductor chip; a ground metal arranged on a surface of a mounting substrate; and a conductive material formed on the ground, configured to connect the metal layer and the ground metal.

摘要翻译： 高频半导体模块包括：具有顶表面和底表面的半导体芯片; 半导体元件合并在半导体芯片中; 所述半导体元件的接地焊盘设置在所述顶面上; 金属层，被配置为连接到所述接地焊盘并延伸到所述半导体芯片的侧壁; 布置在安装基板的表面上的接地金属; 以及形成在地面上的导电材料，被配置为连接金属层和接地金属。

公开(公告)号：US5234386A

公开(公告)日：1993-08-10

申请号：US922986

申请日：1992-07-31

申请人： Shigekazu Nagai ,  Akio Saitoh ,  Toru Sugiyama ,  Masahisa Hasegawa

发明人： Shigekazu Nagai ,  Akio Saitoh ,  Toru Sugiyama ,  Masahisa Hasegawa

IPC分类号： B23Q1/56 ,  B23Q37/00

CPC分类号： B23Q1/56 ,  B23Q37/00 ,  F16H19/0622 ,  F16H2019/0686 ,  F16H2025/2034 ,  F16H2025/204 ,  F16H2025/2075 ,  F16H25/2204 ,  Y10T403/341 ,  Y10T403/345 ,  Y10T74/18648 ,  Y10T74/1884 ,  Y10T74/20354

摘要： Disclosed is an actuator having a frame in which a drive source and a slider displaced under the action of the drive source are held, and an actuator arrangement comprising a plurality of actuators connected to each other by connecting devices. A beam member, which constitutes the frame, has a concave portion defined in a side thereof and the drive source is held in the concave portion. A slider base is held in the concave portion and includes the slider displaced along the concave portion. A cover is used to cover the concave portion defined in the beam member. The beam member has grooves defined in respective outer sides thereof, which have substantially T-shaped cross sections and enable other beam members to be mounted to the beam member. The grooves are defined along the longitudinal direction thereof so as to be substantially identical in structure to one another. According to the above construction, either other beam members or the actuators can be connected to one another by means of the grooves so as to assemble a desired actuator arrangement having a desired shape, thereby making it possible to place the actuator arrangement on a production line in a factory.

公开(公告)号：US08584546B2

公开(公告)日：2013-11-19

申请号：US12545508

申请日：2009-08-21

申请人： Yoshihiro Fukano ,  Toru Sugiyama ,  Masaki Imamura

发明人： Yoshihiro Fukano ,  Toru Sugiyama ,  Masaki Imamura

IPC分类号： F16H1/24

CPC分类号： F16H25/2219

摘要： A ball screw mechanism is equipped with a ball screw shaft formed from a metallic material, a displacement nut inserted over an outer circumferential side of the ball screw shaft, steel balls installed between a first screw groove formed on the ball screw shaft and a second screw groove formed in the displacement nut, and a pair of first and second return members, through which the steel balls are circulated between one end side and another end side of the displacement nut. The first and second return members include main body parts mounted respectively onto one end and another end of the displacement nut, and cylindrical parts that project outwardly with respect to the main body parts. A return passage, through which the steel balls are circulated, is formed inside of the main body parts and the cylindrical parts.

摘要翻译： 滚珠丝杠机构配备有由金属材料形成的滚珠丝杠轴，插入滚珠丝杠轴的外周侧的移动螺母，安装在形成于滚珠丝杠轴上的第一螺旋槽与第二螺丝 形成在位移螺母中的槽，以及一对第一和第二返回构件，钢球通过该一对第一和第二返回构件在位移螺母的一端侧和另一端侧之间循环。 第一和第二返回构件包括分别安装在位移螺母的一端和另一端的主体部分和相对于主体部分向外突出的圆柱形部件。 钢球循环的返回通道形成在主体部分和圆柱形部分的内部。

公开(公告)号：US20120241751A1

公开(公告)日：2012-09-27

申请号：US13238666

申请日：2011-09-21

申请人： Akira YOSHIOKA ,  Yasunobu Saito ,  Hidetoshi Fujimoto ,  Tetsuya Ohno ,  Wataru Saito ,  Toru Sugiyama

发明人： Akira YOSHIOKA ,  Yasunobu Saito ,  Hidetoshi Fujimoto ,  Tetsuya Ohno ,  Wataru Saito ,  Toru Sugiyama

IPC分类号： H01L29/20 ,  H01L21/20

CPC分类号： H01L29/7787 ,  H01L23/3171 ,  H01L29/0661 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/41758 ,  H01L29/4236 ,  H01L29/66462 ,  H01L29/7786 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to one embodiment, a nitride semiconductor device includes a first semiconductor layer, a second semiconductor layer, a first electrode, a second electrode, a third electrode, a first insulating film and a second insulating film. The first semiconductor layer includes a nitride semiconductor. The second semiconductor layer is provided on the first layer, includes a nitride semiconductor, and includes a hole. The first electrode is provided in the hole. The second electrode is provided on the second layer. The third electrode is provided on the second layer so that the first electrode is disposed between the third and second electrodes. The first insulating film is provided between the first electrode and an inner wall of the hole and between the first and second electrodes, and is provided spaced from the third electrode. The second insulating film is provided in contact with the second layer between the first and third electrodes.

摘要翻译： 根据一个实施例，氮化物半导体器件包括第一半导体层，第二半导体层，第一电极，第二电极，第三电极，第一绝缘膜和第二绝缘膜。 第一半导体层包括氮化物半导体。 第二半导体层设置在第一层上，包括氮化物半导体，并且包括孔。 第一电极设置在孔中。 第二电极设置在第二层上。 第三电极设置在第二层上，使得第一电极设置在第三和第二电极之间。 第一绝缘膜设置在第一电极和孔的内壁之间以及第一和第二电极之间，并且与第三电极间隔设置。 第二绝缘膜设置成与第一和第三电极之间的第二层接触。

公开(公告)号：US08110248B2

公开(公告)日：2012-02-07

申请号：US11884234

申请日：2006-02-14

申请人： Masaru Hori ,  Mineo Hiramatsu ,  Hiroyuki Kano ,  Satoshi Yoshida ,  Yukihisa Katayama ,  Toru Sugiyama

发明人： Masaru Hori ,  Mineo Hiramatsu ,  Hiroyuki Kano ,  Satoshi Yoshida ,  Yukihisa Katayama ,  Toru Sugiyama

IPC分类号： H01M4/96

CPC分类号： H01M8/0234 ,  H01M4/8817 ,  H01M4/96 ,  H01M2008/1095 ,  Y02P70/56

摘要： A fuel cell structure comprises a diffusion layer and/or a catalyst layer which are made of a carbonaceous porous material having a nano-size structure, such as carbon nanowall (CNW). A method of manufacturing the structure is also disclosed. The structure and method simplify the process of manufacturing a fuel cell electrode comprised of an electrode catalyst layer and a gas diffusion layer. The electrical conductivity of the catalyst layer is increased and the diffusion efficiency of the diffusion layer is improved, whereby the electricity generation efficiency of the fuel cell can be improved.

摘要翻译： 燃料电池结构包括由具有纳米尺寸结构的碳质多孔材料（例如碳纳米壁（CNW））制成的扩散层和/或催化剂层。 还公开了一种制造该结构的方法。 该结构和方法简化了制造由电极催化剂层和气体扩散层组成的燃料电池电极的工艺。 催化剂层的导电性提高，扩散层的扩散效率提高，能够提高燃料电池的发电效率。