公开(公告)号：US06664876B2

公开(公告)日：2003-12-16

申请号：US10170392

申请日：2002-06-14

申请人： Hiroyuki Watanabe ,  Tsutomu Yamamoto ,  Yoshihide Wadayama ,  Hirotaka Takeshima ,  Kenji Sakakibara ,  Takao Honmei

发明人： Hiroyuki Watanabe ,  Tsutomu Yamamoto ,  Yoshihide Wadayama ,  Hirotaka Takeshima ,  Kenji Sakakibara ,  Takao Honmei

IPC分类号： H01F500

CPC分类号： H01F6/04 ,  G01R33/3806 ,  G01R33/3815 ,  G01R33/3854

摘要： Effect of vibration of a refrigerator on a superconducting coil is reduced to reduce disturbance in an image. A coolant tank for supplying a coolant to coil containers is provided separately from the coil containers, and the refrigerator is placed in the coolant tank, and a coolant circulation passage connects between the coolant tank and the coil containers.

摘要翻译： 冷却器对超导线圈的振动的影响减小，以减少图像中的干扰。用于向线圈容器供应冷却剂的冷却剂罐与线圈容器分开设置，并且将冰箱放置在冷却剂箱中，并且将冷却剂 循环通道连接在冷却剂箱和线圈容器之间。

公开(公告)号：US06633443B1

公开(公告)日：2003-10-14

申请号：US08521115

申请日：1995-08-29

申请人： Hiroyuki Watanabe ,  Satoshi Takarada

发明人： Hiroyuki Watanabe ,  Satoshi Takarada

IPC分类号： G11B509

CPC分类号： G11B20/10212 ,  G11B20/1423

摘要： A peak detection circuit receives a playback signal from a magnetic storage medium and generates a peak detection signal. A shift register transmits the peak detection signal, and a pattern detection circuit is responsive to signals from the shift register to detect a first predetermined temporal pattern of peaks in the peak detection signal. A pattern correction circuit adjusts the relative timing of peaks in the peak detection signal so that the first predetermined temporal pattern of peaks in the peak detection signal is converted to a second predetermined temporal pattern of peaks in a corrected peak detection signal.

摘要翻译： 峰值检测电路从磁存储介质接收重放信号并产生峰值检测信号。 移位寄存器发送峰值检测信号，并且模式检测电路响应于来自移位寄存器的信号，以检测峰值检测信号中的峰值的第一预定时间模式。 图案校正电路调整峰值检测信号中的峰值的相对定时，使得峰值检测信号中的峰值的第一预定时间图案被转换为校正峰值检测信号中的峰值的第二预定时间图案。

公开(公告)号：US06553787B1

公开(公告)日：2003-04-29

申请号：US09701427

申请日：2001-02-05

申请人： Kazuhiro Akiho ,  Masaki Kusuhara ,  Hiroyuki Watanabe ,  Tomoyasu Uno

发明人： Kazuhiro Akiho ,  Masaki Kusuhara ,  Hiroyuki Watanabe ,  Tomoyasu Uno

IPC分类号： C03B1901

CPC分类号： C03B19/095 ,  C30B15/10 ,  C30B35/002 ,  Y02P40/57 ,  Y10S65/04

摘要： Present invention suppresses undesirable effects of the bubbles trapped in a silica glass crucible on single crystallization during the pulling process under a high-temperature load. When raw material powder is melted in a mold 1, graphite components of electrodes and impurities contained in the raw material are removed by introducing hydrogen gas and/or oxygen gas immediately after the start of arc discharge. Graphite and impurities are prevented from entering the product crucible, thereby suppressing the volume increase rate of the bubbles and reducing the inner pressure of the bubbles. Gases remaining in voids of an accumulated layer of silica powder formed inside the mold 1 can be replaced with helium gas, by supplying helium gas to the accumulated layer from the mold 1.

摘要翻译： 本发明在高温负载下，在牵引过程中抑制了在二氧化硅玻璃坩埚中捕获的气泡对单结晶的不良影响。 当原料粉末在模具1中熔化时，通过在电弧放电开始之后立即引入氢气和/或氧气来除去原料中包含的电极和杂质的石墨成分。 防止石墨和杂质进入产品坩埚，从而抑制气泡的体积增加率并降低气泡的内部压力。 残留在模具1内部形成的二氧化硅粉末的空隙中的气体可以用氦气代替，通过从模具1向积聚层供给氦气。

公开(公告)号：US06380064B1

公开(公告)日：2002-04-30

申请号：US09223404

申请日：1998-12-30

申请人： Hideki Mizuhara ,  Shinichi Tanimoto ,  Hiroyuki Watanabe ,  Yasunori Inoue

发明人： Hideki Mizuhara ,  Shinichi Tanimoto ,  Hiroyuki Watanabe ,  Yasunori Inoue

IPC分类号： H01L214763

CPC分类号： H01L23/53223 ,  H01L21/76838 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device having a semiconductor substrate and a wiring layer, which is doped with an impurity, located on the substrate. The semiconductor device has upper and lower wiring layers apart from each other. An electric insulating film electrically insulates between the upper and lower wiring layers. The insulating film has a contact hole. A wiring material is packed with the contact hole to electrically connect the upper and lower wiring layers. The impurity is contained in the lower wiring layer to decrease its resistivity.

摘要翻译： 具有半导体衬底和掺杂有杂质的布线层的半导体器件位于衬底上。 半导体器件具有彼此分开的上和下布线层。 电绝缘膜在上下布线层之间电绝缘。 绝缘膜具有接触孔。 布线材料装有接触孔以电连接上下布线层。 杂质包含在下布线层中以降低其电阻率。

公开(公告)号：US06326318B1

公开(公告)日：2001-12-04

申请号：US09521865

申请日：2000-03-08

申请人： Hiroyuki Watanabe ,  Hideki Mizuhara ,  Kaori Misawa ,  Masaki Hirase ,  Hiroyuki Aoe

发明人： Hiroyuki Watanabe ,  Hideki Mizuhara ,  Kaori Misawa ,  Masaki Hirase ,  Hiroyuki Aoe

IPC分类号： H01L2131

CPC分类号： H01L21/02126 ,  H01L21/02129 ,  H01L21/02131 ,  H01L21/02282 ,  H01L21/02321 ,  H01L21/02351 ,  H01L21/3115 ,  H01L21/31155 ,  H01L21/3121 ,  H01L21/316 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76877

摘要： A semiconductor device and a process for producing the same. The device has two conducting layers that are spaced from each other and an organic insulating film for electrically insulating these two conducting layers from each other. The organic insulating film contains contact holes with plugs being embedded therein so as to electrically connect these two conducting layers by the plugs. The process contains a step of forming the organic insulating film on the lower conducting layer. An impurity having a kinetic energy is introduced into the organic insulating film. Next, contact holes are formed in the organic insulating film, and then plugs are formed in the contact holes. An upper conducting layer is formed on the organic insulating film so as to be electrically connected to the plugs.

摘要翻译： 半导体器件及其制造方法。 该器件具有彼此间隔开的两个导电层和用于将这两个导电层彼此电绝缘的有机绝缘膜。 有机绝缘膜包含嵌入其中的插塞的接触孔，以便通过插头将这两个导电层电连接。 该方法包括在下导电层上形成有机绝缘膜的步骤。 具有动能的杂质被引入到有机绝缘膜中。 接下来，在有机绝缘膜中形成接触孔，然后在接触孔中形成插塞。 在有机绝缘膜上形成上导电层，以电连接到插头。

公开(公告)号：US06288438B1

公开(公告)日：2001-09-11

申请号：US08923901

申请日：1997-09-04

申请人： Hideki Mizuhara ,  Hiroyuki Watanabe ,  Noriaki Kojima

发明人： Hideki Mizuhara ,  Hiroyuki Watanabe ,  Noriaki Kojima

IPC分类号： H01L2358

CPC分类号： H01L21/76859 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76825 ,  H01L21/76829 ,  H01L21/7685 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device that allows improvement in adhesion between insulation films having a 2-layered structure together with improvement of planarization and film characteristics, and a fabrication method thereof are obtained. In the fabrication method of the semiconductor device, an insulation film of a 2-layered structure having at least an upper layer and a lower layer is formed on a semiconductor substrate. Then, impurities are introduced into the upper insulation film under a condition where impurities arrive at least at the interface between the upper insulation film and the lower insulation film. By improving the adhesion between the upper and lower insulation films, the upper insulation film does not easily peel off.

摘要翻译： 获得能够提高具有2层结构的绝缘膜与提高平坦化和膜特性之间的粘附性的半导体器件及其制造方法。 在半导体器件的制造方法中，在半导体衬底上形成至少具有上层和下层的2层结构的绝缘膜。 然后，杂质至少在上绝缘膜和下绝缘膜之间的界面处到达上述绝缘膜的情况下被引入。 通过改善上下绝缘膜之间的粘附性，上绝缘膜不容易剥离。

公开(公告)号：US06268657B1

公开(公告)日：2001-07-31

申请号：US08877931

申请日：1997-06-18

申请人： Hiroyuki Watanabe ,  Hideki Mizuhara ,  Kaori Misawa ,  Masaki Hirase ,  Hiroyuki Aoe

发明人： Hiroyuki Watanabe ,  Hideki Mizuhara ,  Kaori Misawa ,  Masaki Hirase ,  Hiroyuki Aoe

IPC分类号： H01L21321

CPC分类号： H01L21/02164 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/02131 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02321 ,  H01L21/02351 ,  H01L21/3115 ,  H01L21/31155 ,  H01L21/3121 ,  H01L21/316 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76877

摘要： A semiconductor device and a process for producing the same. The device has two conducting layers that are spaced from each other and an insulating film for electrically insulating these two conducting layers from each other. The insulating film contains contact holes with plugs being embedded therein so as to electrically connect these two conducting layers by the plugs. The process contains a step of forming the insulating film on the lower conducting layer. An impurity having a kinetic energy is introduced into the insulating film. Next, contact holes are formed in the insulating film, and then plugs are formed in the contact holes. An upper conducting layer is formed on the insulating film so as to be electrically connected to the plugs.

摘要翻译： 半导体器件及其制造方法。 该器件具有彼此间隔开的两个导电层和用于将这两个导电层彼此电绝缘的绝缘膜。 绝缘膜包含嵌入其中的插塞的接触孔，以便通过插头将这两个导电层电连接。 该方法包括在下导电层上形成绝缘膜的步骤。 具有动能的杂质被引入到绝缘膜中。 接下来，在绝缘膜中形成接触孔，然后在接触孔中形成插塞。 在绝缘膜上形成上导电层以与插头电连接。

公开(公告)号：US06263186B1

公开(公告)日：2001-07-17

申请号：US09535730

申请日：2000-03-27

申请人： Akira Okamoto ,  Norio Joichi ,  Hiroyuki Watanabe ,  Hideo Yamane ,  Youbao Peng

发明人： Akira Okamoto ,  Norio Joichi ,  Hiroyuki Watanabe ,  Hideo Yamane ,  Youbao Peng

IPC分类号： G03G1500

CPC分类号： G03G15/6564

摘要： An image forming apparatus includes: a sheet feeding member for feeding a recording material; an image recording member for recording an image on the recording material; a conveyance path connecting the sheet feeding member and the image recording member, along which the recording material is conveyed; a registration member which is provided in the conveyance path located at the upstream side of the image recording member in the conveyance direction for the recording material, and stops the leading edge of the recording material when being hit by the leading edge, and then, starts conveyance of the recording material; a loop forming member which is provided in the conveyance path located at the upstream side of the registration member in the conveyance direction for the recording material, and forms a loop on the recording material which is stopped by the registration member; a first driving source for driving the registration member; a second driving source for driving the loop forming member; and a drive controller for controlling the first driving source and the second driving source. The drive controller drives both the first driving source and the second driving source after the leading edge of the recording material hits the registration member.

摘要翻译： 图像形成装置包括：用于馈送记录材料的片材进给构件; 用于在记录材料上记录图像的图像记录部件; 输送路径，连接所述供纸构件和所述图像记录构件，所述记录材料沿着所述输送路径被传送; 记录部件，其设置在位于图像记录部件的上游侧的传送路径中，用于记录材料的传送方向，并且在被前缘撞击时停止记录材料的前缘，然后开始 传送记录材料; 环形成部件设置在位于记录材料的输送方向上的配准部件的上游侧的输送路径中，并且在由记录部件停止的记录材料上形成回路; 用于驱动所述注册构件的第一驱动源; 用于驱动所述环形成构件的第二驱动源; 以及用于控制第一驱动源和第二驱动源的驱动控制器。 驱动控制器在记录材料的前缘撞击对准构件之后驱动第一驱动源和第二驱动源。

公开(公告)号：USD444778S1

公开(公告)日：2001-07-10

申请号：US29130390

申请日：2000-09-29

申请人： Masafumi Ito ,  Hiroyuki Watanabe ,  Minoru Sube

设计人： Masafumi Ito ,  Hiroyuki Watanabe ,  Minoru Sube

公开(公告)号：USD431238S

公开(公告)日：2000-09-26

申请号：US94679

申请日：1998-10-07

申请人： Masafumi Ito ,  Hiroyuki Watanabe ,  Yukio Iikura

设计人： Masafumi Ito ,  Hiroyuki Watanabe ,  Yukio Iikura