公开(公告)号：US20060191894A1

公开(公告)日：2006-08-31

申请号：US11362121

申请日：2006-02-27

申请人： Ryosuke Usui ,  Hideki Mizuhara ,  Yasunori Inoue ,  Noriaki Kojima ,  Hiroyuki Watanabe ,  Shinya Nakano

发明人： Ryosuke Usui ,  Hideki Mizuhara ,  Yasunori Inoue ,  Noriaki Kojima ,  Hiroyuki Watanabe ,  Shinya Nakano

IPC分类号： H05B3/68

CPC分类号： G06F1/203 ,  H05K7/20445

摘要： In a heat radiation structure for an electronic appliance in which heat generated in a heat generating member inside a flap of the electronic appliance is radiated to a space outside the flap, a heat radiation plate integrally formed with a circuit element is thermally coupled to the heat generating member and is exposed outside the flap. Heat generated in the heat generating member is conducted to the heat radiation plate via a contact portion and is radiated to a space outside the flap from an exposed surface along with heat generated in the circuit element.

摘要翻译： 在用于电子设备的热辐射结构中，其中在电子设备的翼片内的发热元件中产生的热量辐射到翼片外部的空间，与电路元件整体形成的散热板热耦合到热 并且暴露在皮瓣外部。 在发热元件中产生的热量经由接触部分被传导到散热板，并且随着在电路元件中产生的热量从露出的表面辐射到翼片之外的空间。

公开(公告)号：US06288438B1

公开(公告)日：2001-09-11

申请号：US08923901

申请日：1997-09-04

申请人： Hideki Mizuhara ,  Hiroyuki Watanabe ,  Noriaki Kojima

发明人： Hideki Mizuhara ,  Hiroyuki Watanabe ,  Noriaki Kojima

IPC分类号： H01L2358

CPC分类号： H01L21/76859 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76825 ,  H01L21/76829 ,  H01L21/7685 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device that allows improvement in adhesion between insulation films having a 2-layered structure together with improvement of planarization and film characteristics, and a fabrication method thereof are obtained. In the fabrication method of the semiconductor device, an insulation film of a 2-layered structure having at least an upper layer and a lower layer is formed on a semiconductor substrate. Then, impurities are introduced into the upper insulation film under a condition where impurities arrive at least at the interface between the upper insulation film and the lower insulation film. By improving the adhesion between the upper and lower insulation films, the upper insulation film does not easily peel off.

摘要翻译： 获得能够提高具有2层结构的绝缘膜与提高平坦化和膜特性之间的粘附性的半导体器件及其制造方法。 在半导体器件的制造方法中，在半导体衬底上形成至少具有上层和下层的2层结构的绝缘膜。 然后，杂质至少在上绝缘膜和下绝缘膜之间的界面处到达上述绝缘膜的情况下被引入。 通过改善上下绝缘膜之间的粘附性，上绝缘膜不容易剥离。

公开(公告)号：US07301228B2

公开(公告)日：2007-11-27

申请号：US10725993

申请日：2003-12-03

申请人： Ryosuke Usui ,  Hideki Mizuhara ,  Yusuke Igarashi ,  Noriaki Kojima ,  Noriaki Sakamoto

发明人： Ryosuke Usui ,  Hideki Mizuhara ,  Yusuke Igarashi ,  Noriaki Kojima ,  Noriaki Sakamoto

IPC分类号： H01L23/04 ,  H01R9/09

CPC分类号： H01L21/6835 ,  H01L23/49822 ,  H01L23/49838 ,  H01L23/49894 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/97 ,  H01L2221/68345 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/49171 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/01088 ,  H01L2924/12042 ,  H01L2924/13055 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/30105 ,  H05K1/024 ,  H05K3/205 ,  H05K3/4676 ,  H05K3/4682 ,  H05K2201/068 ,  Y10S428/901 ,  Y10T428/24917 ,  H01L2224/85 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/0401

摘要： The present invention provides a low-profile and light-weight semiconductor device having improved product reliability and higher frequency performance. A multi-layer interconnect line structure is disposed just under circuit devices 410a and 410b. An Interlayer insulating film 405 that composes a part of the multi-layer interconnect line structure is formed of a material having a relative dielectric constant within a range from 1.0 to 3.7, and a dielectric loss tangent within a range from 0.0001 to 0.02.

摘要翻译： 本发明提供一种具有改进的产品可靠性和更高频率性能的低轮廓和轻量级的半导体器件。 多层互连线结构正好位于电路器件410a和410b的正下方。 组成多层互连线结构的一部分的层间绝缘膜405由相对介电常数为1.0〜3.7，介电损耗角正切为0.0001〜0.02的材料形成。

公开(公告)号：US06235648B1

公开(公告)日：2001-05-22

申请号：US09160044

申请日：1998-09-25

申请人： Hideki Mizuhara ,  Hiroyuki Watanabe ,  Naoteru Matsubara

发明人： Hideki Mizuhara ,  Hiroyuki Watanabe ,  Naoteru Matsubara

IPC分类号： H01L21461

CPC分类号： H01L21/76859 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/02137 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02321 ,  H01L21/02351 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31155 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/3185 ,  H01L21/76801 ,  H01L21/76825 ,  H01L21/76829

摘要： A semiconductor device including an insulation film superior in insulation characteristic is obtained. Boron ions are introduced by ion implantation into an organic SOG film with a silicon nitride film formed on the organic SOG film. By this boron implantation, the property of the organic SOG film is modified. The moisture and hydroxyl group included in the film are greatly reduced irrespective of the amount of dose of ions. By using such a layered film of a modified SOG film and a silicon nitride film thereupon as an interlayer insulation film or a passivation film, the water resistance of a semiconductor device can be improved sufficiently.

摘要翻译： 获得包括绝缘特性优异的绝缘膜的半导体器件。 通过离子注入将硼离子引入到在有机SOG膜上形成的氮化硅膜的有机SOG膜中。 通过这种硼注入，有机SOG膜的性质被改变。 包括在膜中的水分和羟基与离子的剂量无关地大大降低。 通过使用这样的改性SOG膜和氮化硅膜的分层膜作为层间绝缘膜或钝化膜，可以充分提高半导体器件的耐水性。

公开(公告)号：US06177343B1

公开(公告)日：2001-01-23

申请号：US09429698

申请日：1999-10-28

申请人： Hiroyuki Watanabe ,  Hideki Mizuhara ,  Kaori Misawa ,  Masaki Hirase ,  Hiroyuki Aoe

发明人： Hiroyuki Watanabe ,  Hideki Mizuhara ,  Kaori Misawa ,  Masaki Hirase ,  Hiroyuki Aoe

IPC分类号： H01L214763

CPC分类号： H01L21/02164 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/02131 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02321 ,  H01L21/02351 ,  H01L21/3115 ,  H01L21/31155 ,  H01L21/3121 ,  H01L21/316 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76877

摘要： A semiconductor device and a process for producing the same. The device has two conducting layers that are spaced from each other and an insulating film for electrically insulating these two conducting layers from each other. The insulating film contains contact holes with plugs being embedded therein so as to electrically connect these two conducting layers by the plugs. The process contains a step of forming the insulating film on the lower conducting layer. An impurity having a kinetic energy is introduced into the insulating film. Next, contact holes are formed in the insulating film, and then plugs are formed in the contact holes. An upper conducting layer is formed on the insulating film so as to be electrically connected to the plugs.

摘要翻译： 半导体器件及其制造方法。 该器件具有彼此间隔开的两个导电层和用于将这两个导电层彼此电绝缘的绝缘膜。 绝缘膜包含嵌入其中的插塞的接触孔，以便通过插头将这两个导电层电连接。 该方法包括在下导电层上形成绝缘膜的步骤。 具有动能的杂质被引入到绝缘膜中。 接下来，在绝缘膜中形成接触孔，然后在接触孔中形成插塞。 在绝缘膜上形成上导电层以与插头电连接。

公开(公告)号：US5898221A

公开(公告)日：1999-04-27

申请号：US953822

申请日：1997-09-25

申请人： Hideki Mizuhara ,  Shinichi Tanimoto ,  Hiroyuki Watanabe ,  Yasunori Inoue

发明人： Hideki Mizuhara ,  Shinichi Tanimoto ,  Hiroyuki Watanabe ,  Yasunori Inoue

IPC分类号： H01L21/768 ,  H01L23/532 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/53223 ,  H01L21/76838 ,  H01L23/5329 ,  H01L2924/0002

摘要： A semiconductor device having a semiconductor substrate and a wiring layer, which is doped with an impurity, located on the substrate. The semiconductor device has upper and lower wiring layers apart from each other. An electric insulating film electrically insulates between the upper and lower wiring layers. The insulating film has a contact hole. A wiring material is packed with the contact hole to electrically connect the upper and lower wiring layers. The impurity is contained in the lower wiring layer to decrease its resistivity.

摘要翻译： 具有半导体衬底和掺杂有杂质的布线层的半导体器件位于衬底上。 半导体器件具有彼此分开的上和下布线层。 电绝缘膜在上下布线层之间电绝缘。 绝缘膜具有接触孔。 布线材料装有接触孔以电连接上下布线层。 杂质包含在下布线层中以降低其电阻率。

公开(公告)号：US06794283B2

公开(公告)日：2004-09-21

申请号：US09320271

申请日：1999-05-27

申请人： Hiroyuki Watanabe ,  Hideki Mizuhara ,  Shinichi Tanimoto ,  Atsuhiro Nishida ,  Yoshikazu Yamaoka ,  Yasunori Inoue

发明人： Hiroyuki Watanabe ,  Hideki Mizuhara ,  Shinichi Tanimoto ,  Atsuhiro Nishida ,  Yoshikazu Yamaoka ,  Yasunori Inoue

IPC分类号： H01L214763

CPC分类号： H01L21/02126 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02351 ,  H01L21/31155 ,  H01L21/316 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76825 ,  H01L23/5226 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device superior in reliability and suitable for microminiaturization is provided. An organic SOG film is formed on a silicon oxide film. Boron ions are implanted into the organic SOG film. By introducing boron ions into the organic SOG film, the organic components in the film are decomposed. Also, the moisture and hydroxyl group included in the film are reduced. After a metal interconnection is embedded in a modified SOG film by the Damascene method, a modified SOG film is formed thereon. Then, contact holes are formed. After a contact hole interconnection is embedded in the contact holes, a modified SOG film and an upper metal interconnection are formed by the Damascene method.

摘要翻译： 提供了可靠性优异并且适合于微型化的半导体器件。 在氧化硅膜上形成有机SOG膜。 将硼离子注入到有机SOG膜中。 通过将硼离子引入有机SOG膜中，膜中的有机成分被分解。 此外，膜中包含的水分和羟基也被还原。 通过镶嵌法将金属互连嵌入改性SOG膜中之后，形成改性SOG膜。 然后，形成接触孔。 在接触孔嵌入接触孔互连后，通过镶嵌法形成改性SOG膜和上金属互连。

公开(公告)号：US06690084B1

公开(公告)日：2004-02-10

申请号：US09716334

申请日：2000-11-21

申请人： Hideki Mizuhara ,  Hiroyuki Watanabe ,  Naoteru Matsubara

发明人： Hideki Mizuhara ,  Hiroyuki Watanabe ,  Naoteru Matsubara

IPC分类号： H01L23522

CPC分类号： H01L21/02126 ,  H01L21/02129 ,  H01L21/02137 ,  H01L21/02282 ,  H01L21/02321 ,  H01L21/0234 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31155 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/3185 ,  H01L21/76825 ,  H01L21/76829

摘要： A semiconductor device including an insulation film superior in insulation characteristic is obtained. Boron ions are introduced by ion implantation into an organic SOG film with a silicon nitride film formed on the organic SOG film. By this boron implantation, the property of the organic SOG film is modified. The moisture and hydroxyl group included in the film are greatly reduced irrespective of the amount of dose of ions. By using such a layered film of a modified SOG film and a silicon nitride film thereupon as an interlayer insulation film or a passivation film, the water resistance of a semiconductor device can be improved sufficiently.

摘要翻译： 获得包括绝缘特性优异的绝缘膜的半导体器件。 通过离子注入将硼离子引入到在有机SOG膜上形成的氮化硅膜的有机SOG膜中。 通过这种硼注入，有机SOG膜的性质被改变。 包括在膜中的水分和羟基与离子的剂量无关地大大降低。 通过使用这样的改性SOG膜和氮化硅膜的分层膜作为层间绝缘膜或钝化膜，可以充分提高半导体器件的耐水性。

公开(公告)号：US6071807A

公开(公告)日：2000-06-06

申请号：US997049

申请日：1997-12-23

申请人： Hiroyuki Watanabe ,  Hideki Mizuhara ,  Kimihide Saito

发明人： Hiroyuki Watanabe ,  Hideki Mizuhara ,  Kimihide Saito

IPC分类号： H01L21/28 ,  H01L21/265 ,  H01L21/3115 ,  H01L21/316 ,  H01L21/768 ,  H01L29/78 ,  H01L21/00

CPC分类号： H01L21/76859 ,  H01L21/31155 ,  H01L21/76801 ,  H01L21/76819 ,  H01L21/76825 ,  H01L21/7685

摘要： A semiconductor device including an interlayer insulation film is obtained, superior in planarization, insulation characteristics, and adhesion, suitable for microminiaturization of an element, and without inducing the problem of signal delay. In the fabrication method of this semiconductor device, an interconnection is formed on semiconductor substrate. Then, a first insulation film is formed so as to be in contact on the interconnection. Impurities are introduced into the first insulation film under a condition where the impurities arrive at least at the interconnection. As a result, the first insulation film is reduced in moisture and becomes less hygroscopic. Therefore, the insulation characteristics of the first insulation film is improved. When an SOG film superior in planarization is employed as the first insulation film, it is possible to directly form that SOG film on an underlying interconnection. In addition, the adhesion intensity between the first insulation film and the interconnection is improved. Furthermore, the distance between the pattern in the underlying interconnection can be reduced. Also, the capacitance between the interconnections is reduced.

摘要翻译： 获得包括层间绝缘膜的半导体器件，其平坦化，绝缘特性和粘合性优异，适用于元件的微小化，并且不引起信号延迟的问题。 在该半导体器件的制造方法中，在半导体衬底上形成互连。 然后，形成第一绝缘膜以在互连上接触。 杂质在杂质到达至少互连的条件下被引入第一绝缘膜。 结果，第一绝缘膜的湿度降低并且吸湿性变差。 因此，提高了第一绝缘膜的绝缘特性。 当采用平面化优异的SOG膜作为第一绝缘膜时，可以在下面的互连上直接形成SOG膜。 此外，提高了第一绝缘膜和互连之间的粘附强度。 此外，底层互连中的图案之间的距离可以减小。 此外，互连之间的电容减小。

公开(公告)号：US06380064B1

公开(公告)日：2002-04-30

申请号：US09223404

申请日：1998-12-30

申请人： Hideki Mizuhara ,  Shinichi Tanimoto ,  Hiroyuki Watanabe ,  Yasunori Inoue

发明人： Hideki Mizuhara ,  Shinichi Tanimoto ,  Hiroyuki Watanabe ,  Yasunori Inoue

IPC分类号： H01L214763

CPC分类号： H01L23/53223 ,  H01L21/76838 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device having a semiconductor substrate and a wiring layer, which is doped with an impurity, located on the substrate. The semiconductor device has upper and lower wiring layers apart from each other. An electric insulating film electrically insulates between the upper and lower wiring layers. The insulating film has a contact hole. A wiring material is packed with the contact hole to electrically connect the upper and lower wiring layers. The impurity is contained in the lower wiring layer to decrease its resistivity.

摘要翻译： 具有半导体衬底和掺杂有杂质的布线层的半导体器件位于衬底上。 半导体器件具有彼此分开的上和下布线层。 电绝缘膜在上下布线层之间电绝缘。 绝缘膜具有接触孔。 布线材料装有接触孔以电连接上下布线层。 杂质包含在下布线层中以降低其电阻率。