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    Semiconductor component with a structure for avoiding parallel-path currents and method for fabricating a semiconductor component
    51.
    发明授权
    Semiconductor component with a structure for avoiding parallel-path currents and method for fabricating a semiconductor component 失效
    具有避免并联路径电流的结构的半导体元件和用于制造半导体元件的方法

    公开(公告)号：US06469365B1

    公开(公告)日：2002-10-22

    申请号：US09415728

    申请日：1999-10-12

    申请人： Wolfgang Werner

    发明人： Wolfgang Werner

    IPC分类号： H01L2900

    CPC分类号： H01L27/0921 ,  H01L21/761

    摘要： A semiconductor component having a structure for avoiding parallel-path currents in the semiconductor component includes a substrate of a first conductivity type having a surface. A plurality of separate wells of a second conductivity type with a more highly doped edge layer of the second conductivity type are disposed at the surface of the substrate and are isolated from one another by pn junctions. At least one of the wells is completely surrounded by an insulating well of the first conductivity type. The doping of the insulating well is higher than that of the substrate. A method for fabricating a semiconductor component is also provided.

    摘要翻译： 具有用于避免半导体部件中的平行通路电流的结构的半导体部件包括具有表面的第一导电型的基板。 具有第二导电类型的更高掺杂边缘层的具有第二导电类型的多个单独的阱设置在衬底的表面并且通过pn结彼此隔离。 至少一个孔被第一导电类型的绝缘阱完全包围。 绝缘阱的掺杂高于衬底的掺杂。 还提供了一种制造半导体部件的方法。

    Semiconductor component
    52.
    发明授权
    Semiconductor component 有权
    半导体元件

    公开(公告)号：US06337499B1

    公开(公告)日：2002-01-08

    申请号：US09530668

    申请日：2000-08-04

    申请人： Wolfgang Werner

    发明人： Wolfgang Werner

    IPC分类号： H01L2978

    CPC分类号： H01L29/7802 ,  H01L21/2255 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/41766

    摘要： The invention is directed to a semiconductor component having a semiconductor body with two principal faces, at least two electrodes at least one electrode being provided on a principal face, and zones of a conductivity type opposite one another that are arranged in alternation in the semiconductor body and extend perpendicularly to the two principal faces. For an application of a voltage to the two electrodes, the zones arranged in alternation mutually clear of charge carriers so that an essentially constant field strength is built up in the semiconductor body between the two electrodes These zones arranged in alternation inventively contain at least one cavity that is preferably closed by a glass layer.

    摘要翻译： 本发明涉及一种具有半导体主体的半导体部件，该半导体器件具有两个主面，至少两个电极，至少一个电极设置在主面上，以及导电类型彼此相对的区域，其在半导体本体中交替布置 并垂直于两个主面延伸。 为了对两个电极施加电压，交替布置的区域相互清除电荷载体，使得在两个电极之间的半导体本体中建立基本上恒定的场强。这些交替布置的区域本来包含至少一个空腔 优选由玻璃层封闭。

    Process for producing an epitaxial layer with laterally varying doping
    53.
    发明授权
    Process for producing an epitaxial layer with laterally varying doping 有权
    用于制造具有横向变化的掺杂的外延层的工艺

    公开(公告)号：US06171935B2

    公开(公告)日：2001-01-09

    申请号：US09317694

    申请日：1999-05-24

    申请人： Paul Nance ,  Wolfgang Werner

    发明人： Paul Nance ,  Wolfgang Werner

    IPC分类号： H01L2120

    CPC分类号： H01L29/7802 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/30604 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/0873 ,  H01L29/1095 ,  H01L29/66712 ,  Y10S438/969

    摘要： A process for producing an epitaxial layer with laterally varying doping includes the following steps: (a) applying a patterned insulator layer to a semiconductor body; (b) growing a first epitaxial layer on the semiconductor body and the patterned insulator layer so that monocrystalline regions are formed over the semiconductor body and polycrystalline regions are formed over the patterned insulator layer, the angle of inclination (&agr;) of the interface between the monocrystalline regions and the polycrystalline regions depending on the grain size of the polycrystalline regions; (c) removing the polycrystalline regions and the insulator layer, and (d) growing a second epitaxial layer which, together with the monocrystalline regions of the first epitaxial layer, forms the epitaxial layer.

    摘要翻译： 用于制造具有横向变化掺杂的外延层的方法包括以下步骤：（a）将图案化的绝缘体层施加到半导体本体; （b）在半导体主体和图案化的绝缘体层上生长第一外延层，使得在半导体主体上形成单晶区域，并且多晶区域形成在图案化的绝缘体层之上，其中界面的倾斜角（α） 单晶区域和多晶区域取决于多晶区域的晶粒尺寸; （c）去除多晶区域和绝缘体层，以及（d）生长第二外延层，其与第一外延层的单晶区域一起形成外延层。

    Method for producing a low-impedance contact between a metallizing layer and a semiconductor material
    54.
    发明授权
    Method for producing a low-impedance contact between a metallizing layer and a semiconductor material 失效
    用于在金属化层和半导体材料之间产生低阻抗接触的方法

    公开(公告)号：US6146982A

    公开(公告)日：2000-11-14

    申请号：US853158

    申请日：1997-05-08

    申请人： Wolfgang Werner ,  Klaus Wiesinger ,  Andreas Preussger

    发明人： Wolfgang Werner ,  Klaus Wiesinger ,  Andreas Preussger

    IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/336 ,  H01L21/3205 ,  H01L21/331

    CPC分类号： H01L21/28512

    摘要： A method for producing a low-impedance contact between a metallizing layer and a semiconductor material of a first conductivity type having a semiconductor surface, an insulation layer on the semiconductor surface and a semiconductor layer on the insulation layer, includes applying a first insulating layer with a predetermined content of dopants on the semiconductor layer, and structuring the first insulating layer by anisotropic etching, forming first and second openings. The semiconductor layer is anisotropically etched by using the first insulating layer as a mask. A first dopant of a second conductivity type is implanted and driven through the first opening into the semiconductor material with a first phototechnique, forming a first zone in the semiconductor material. A second dopant of the first conductivity type is implanted through the second opening into the semiconductor material with a second phototechnique. A second doped insulating layer is applied over the entire surface. The second insulating layer is anisotropically back-etched down to the semiconductor surface, with peripheral insulating webs remaining in the first opening. The semiconductor material is self-adjustingly anisotropically etched down to the first zone, by using the second insulating layer as a mask. A third dopant of higher doping and of the second conductivity type is implanted into the first zone by using the second insulating layer as a mask. A metallizing layer is applied.

    摘要翻译： 一种用于在金属化层和具有半导体表面的半导体材料的半导体材料，半导体表面上的绝缘层和绝缘层上的半导体层之间产生低阻抗接触的方法，包括：将第一绝缘层与 半导体层上的预定含量的掺杂剂，并且通过各向异性蚀刻构造第一绝缘层，形成第一和第二开口。 通过使用第一绝缘层作为掩模对半导体层进行各向异性蚀刻。 第一导电类型的第一掺杂剂通过第一光刻技术被注入和驱动通过第一开口进入半导体材料，在半导体材料中形成第一区。 第一导电类型的第二掺杂剂通过第二开口以第二光电技术注入半导体材料。 在整个表面上施加第二掺杂绝缘层。 将第二绝缘层各向异性地向下蚀刻到半导体表面，其中外围绝缘网保留在第一开口中。 通过使用第二绝缘层作为掩模，将半导体材料自适应地各向异性地蚀刻到第一区域。 通过使用第二绝缘层作为掩模，将较高掺杂和第二导电类型的第三掺杂剂注入第一区。 施加金属化层。

    Coated slides and apparatus for coating same
    56.
    发明授权
    Coated slides and apparatus for coating same 失效
    涂层滑片和用于涂覆的装置

    公开(公告)号：US4224277A

    公开(公告)日：1980-09-23

    申请号：US899666

    申请日：1978-04-24

    申请人： Heinz Macho ,  Hans Lange ,  Dieter Berger ,  Wolfgang Werner

    发明人： Heinz Macho ,  Hans Lange ,  Dieter Berger ,  Wolfgang Werner

    IPC分类号： C03C17/28 ,  G01N1/30 ,  G01N1/31 ,  G01N1/28 ,  G02B21/34

    CPC分类号： G01N1/30 ,  G01N1/312

    摘要： Pre-coated microscope slides are produced on a large scale by spraying a dyestuff solution on to microscope slides which are passed at a constant speed under a spray nozzle, the pattern of which is kept rectangular by means of a mask. Apparatus for carrying out the process includes a conveyor belt, a regulatable spraying device positioned above the conveyor belt and a mask positioned between the spraying device and the conveyor belt.

    摘要翻译： 通过将染料溶液喷涂到显微镜载玻片上，通过在喷嘴下以恒定速度通过的图案，通过掩模将其图案保持为矩形，大规模生产预涂式显微镜载玻片。 用于执行该过程的装置包括传送带，位于传送带上方的可调节喷涂装置和位于喷涂装置与传送带之间的掩模。

    Sugar centrifuge with a device for blocking and unblocking an opening thereof
    59.
    发明授权
    Sugar centrifuge with a device for blocking and unblocking an opening thereof 失效
    糖离心机具有用于阻塞和解除其开口的装置

    公开(公告)号：US3989536A

    公开(公告)日：1976-11-02

    申请号：US643510

    申请日：1975-12-22

    申请人： Wolfgang Werner

    发明人： Wolfgang Werner

    IPC分类号： B04B11/05 ,  C13F1/06

    CPC分类号： B04B11/05

    摘要： A centrifuge drum is mounted for rotation about an upright axis and has a bottom wall provided with an opening. A closure member is mounted for movement relative to the bottom wall between a first position in which it sealingly blocks the opening, and a second position in which it unblocks the opening. A fluid-pressure actuated arrangement is operable to move the closure member to its first position and maintain it there as long as desired. A connecting head is provided which connects the fluid pressure-actuated arrangement with a source of pressure fluid.

    摘要翻译： 离心机滚筒安装成围绕直立轴线旋转并具有设置有开口的底壁。 闭合构件被安装成相对于底壁在第一位置和第二位置之间移动，第一位置在其中密封地阻挡开口，第二位置使其打开开口。 流体压力致动装置可操作以将封闭构件移动到其第一位置，并且如期望的那样将其保持在那里。 提供连接头，其将流体压力驱动装置与压力流体源连接。

    Field-effect semiconductor device and manufacturing method therefor
    60.
    发明授权
    Field-effect semiconductor device and manufacturing method therefor 有权
    场效应半导体器件及其制造方法

    公开(公告)号：US09064887B2

    公开(公告)日：2015-06-23

    申请号：US13602614

    申请日：2012-09-04

    申请人： Wolfgang Werner

    发明人： Wolfgang Werner

    IPC分类号： H01L29/66 ,  H01L29/872 ,  H01L29/78

    CPC分类号： H01L27/0629 ,  H01L29/04 ,  H01L29/1095 ,  H01L29/1604 ,  H01L29/1608 ,  H01L29/165 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/66068 ,  H01L29/66431 ,  H01L29/66734 ,  H01L29/66893 ,  H01L29/66909 ,  H01L29/66924 ,  H01L29/7395 ,  H01L29/78 ,  H01L29/7805 ,  H01L29/7806 ,  H01L29/7813 ,  H01L29/8083 ,  H01L29/8611 ,  H01L29/872 ,  H01L2924/0002 ,  H01L2924/00

    摘要： According to an embodiment of a field-effect semiconductor device, the field-effect semiconductor device includes a semiconductor body and a source electrode. The semiconductor body includes a drift region, a gate region and a source region of a first semiconductor material having a first band-gap and an anode region of a second semiconductor material having a second band-gap lower than the first band-gap. The drift region is of a first conductivity type. The gate region forms a pn-junction with the drift region. The source region is of the first conductivity type and in resistive electric connection with the drift region and has a higher maximum doping concentration than the drift region. The anode region is of the second conductivity type, forms a heterojunction with the drift region and is spaced apart from the source region. The source metallization is in resistive electric connection with the source region and the anode region.

    摘要翻译： 根据场效应半导体器件的实施例，场效应半导体器件包括半导体本体和源电极。 半导体本体包括具有第一带隙的第一半导体材料的漂移区域，栅极区域和源极区域以及具有低于第一带隙的第二带隙的第二半导体材料的阳极区域。 漂移区是第一导电类型。 栅极区域与漂移区域形成pn结。 源区具有第一导电类型并且与漂移区电阻电连接并且具有比漂移区更高的最大掺杂浓度。 阳极区域是第二导电类型，与漂移区域形成异质结并且与源极区域间隔开。 源极金属化与源极区域和阳极区域电阻电连接。