利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

59 条记录 (耗时 0.03 秒)

    Surface acoustic wave device and substrate thereof
    51.
    发明授权
    Surface acoustic wave device and substrate thereof 失效
    声表面波器件及其衬底

    公开(公告)号：US06400061B1

    公开(公告)日：2002-06-04

    申请号：US09574310

    申请日：2000-05-19

    申请人： Kenji Inoue ,  Tsuguo Fukuda ,  Katsuo Sato ,  Hiroki Morikoshi ,  Katsumi Kawasaki ,  Kiyoshi Uchida

    发明人： Kenji Inoue ,  Tsuguo Fukuda ,  Katsuo Sato ,  Hiroki Morikoshi ,  Katsumi Kawasaki ,  Kiyoshi Uchida

    IPC分类号： H01L4108

    CPC分类号： H03H9/02543

    摘要： The present invention provides a piezoelectric substrate for a surface acoustic wave device which has high electromechanical coupling coefficient and low SAW velocity, and a surface acoustic wave device using the same. The present invention applies a single crystal comprising belonging to a point group 32 and having Ca3Ga2Ge4O14 type crystal structure. The basic component of the single crystal is comprised of La, Sr, Ta, Ga and O and is represented by the chemical formula: La3−xSrxTa0.5+0.5xGa5.5−0.5xO14. The composition ratio of Sr is preferably in the range of 0 x≦0.15, and more preferably in the range of 0.07 x≦0.08. The present invention also provides a surface acoustic wave device using that in which an interdigital finger electrode is formed in one main surface of the aforementioned piezoelectric substrate. When a cut angle of the substrate cut out of the single crystal and a propagation direction of surface acoustic waves are represented in terms of Euler angles (&phgr;, &thgr;, &psgr;), adequate characteristics can be obtained by selecting these angles.

    摘要翻译： 本发明提供了一种具有高机电耦合系数和低SAW速度的表面声波装置的压电基片和使用该压电基片的表面声波装置。 本发明应用包含属于点组32并具有Ca 3 Ga 2 Ge 4 O 14型晶体结构的单晶。 单晶的基本成分由La，Sr，Ta，Ga和O组成，由化学式La3-xSrxTa0.5 + 0.5xGa5.5-0.5xO14表示。 Sr的组成比优选地在0℃的范围内。“CUSTOM-CHARACTER FILE =”20“ID =”CUSTOM-CHARACTER- 00001“/> x <= 0.15，更优选在0.07 x <= 0.08。 本发明还提供一种使用在上述压电基板的一个主表面上形成叉指指状电极的表面声波装置。 当从单晶切割的基板的切割角度和表面声波的传播方向以欧拉角（phi，θ，psi）表示时，通过选择这些角度可以获得足够的特性。

    Method for the preparation of wire-formed silicon crystal
    53.
    发明授权
    Method for the preparation of wire-formed silicon crystal 失效
    线形硅晶体的制备方法

    公开(公告)号：US5667585A

    公开(公告)日：1997-09-16

    申请号：US579350

    申请日：1995-12-27

    申请人： Tsuguo Fukuda ,  Susumu Sakaguchi ,  Tadashi Kamioka ,  Toru Yamada ,  Teruhiko Hirasawa

    发明人： Tsuguo Fukuda ,  Susumu Sakaguchi ,  Tadashi Kamioka ,  Toru Yamada ,  Teruhiko Hirasawa

    IPC分类号： C30B13/00 ,  C30B15/00 ,  C30B28/08

    CPC分类号： C30B29/06 ,  C30B13/00 ,  C30B15/00

    摘要： Proposed is a low-cost method for the preparation of a wire-formed crystal of silicon having a diameter of 1 mm or smaller, in which a vertically held starting rod of silicon is melted at one end portion by high-frequency induction heating, a seed crystal is brought into contact with the molten portion and then the seed crystal and the starting silicon rod are pulled apart in the vertical direction at a controlled velocity with a controlled high-frequency power input so that the melt of silicon drawn by the seed crystal is solidified and crystallized into the form of a wire.

    摘要翻译： 提出了一种低成本的制备直径为1mm以下的硅线状晶体的低成本方法，其中通过高频感应加热在一端部将垂直保持的硅起始棒熔化， 使晶种与熔融部分接触，然后晶体和起始硅棒以受控的高频功率输入以受控的速度在垂直方向上拉开，使得由晶种吸收的硅熔体 被固化并结晶成线的形式。

    Optoelectric articles and a process for producing the same
    54.
    发明授权
    Optoelectric articles and a process for producing the same 失效
    光电制品及其制造方法

    公开(公告)号：US5539569A

    公开(公告)日：1996-07-23

    申请号：US411413

    申请日：1995-03-27

    申请人： Tsuguo Fukuda ,  Tatsuo Kawaguchi ,  Minoru Imaeda

    发明人： Tsuguo Fukuda ,  Tatsuo Kawaguchi ,  Minoru Imaeda

    IPC分类号： G02F1/03 ,  C30B19/00 ,  C30B19/02 ,  C30B29/30 ,  G02B6/12 ,  G02B6/13 ,  G02F1/00 ,  G02B6/10

    CPC分类号： G02B6/131 ,  C30B19/02 ,  C30B29/30 ,  G02B2006/12042

    摘要： According to the invention, a film of optoelectric single crystal may be formed on a substrate made of optoelectric single crystal by a liquid phase epitaxial process. The process comprises the steps of producing a melt of a solute and a melting medium, a solid phase and a liquid phase coexisting in the melt; then cooling the liquid phase for producing super cooling state in the liquid phase; and contacting the substrate to the liquid phase to form the film on the substrate by an epitaxial growing process. The film may be produced on the substrate, the film having a half value width of an X-ray rocking curve not more than that of the substrate.

    摘要翻译： 根据本发明，可以通过液相外延工艺在由光电单晶制成的基板上形成光电单晶膜。 该方法包括以下步骤：在熔体中共熔融溶质和熔融介质，固相和液相的熔体; 然后冷却液相以在液相中产生超冷却状态; 并将衬底接触液相，通过外延生长工艺在衬底上形成膜。 膜可以在基板上制造，该膜具有不大于基板的X射线摇摆曲线的半值宽度。

    Apparatus for manufacturing semiconductor single crystal
    55.
    发明授权
    Apparatus for manufacturing semiconductor single crystal 失效
    半导体单晶制造装置

    公开(公告)号：US4606037A

    公开(公告)日：1986-08-12

    申请号：US571194

    申请日：1984-01-16

    申请人： Kazutaka Terashima ,  Tsuguo Fukuda

    发明人： Kazutaka Terashima ,  Tsuguo Fukuda

    IPC分类号： C30B15/14 ,  C30B15/30 ,  H05B11/00

    CPC分类号： C30B15/14 ,  C30B15/305

    摘要： The heater member of a furnace for heating the crucible used for fusing raw materials for a semiconductor single crystal is provided with reinforcing members made of a material such as alumina or pyrolytic boron nitride which excels in electric insulating property, resistance to heat, and strength. When a magnetic field with an alternating current or pulsating current of electricity is applied to the site of single crystal growth for the purpose of stabilizing the growth of the single crystal, the furnace tends to sustain breakage. These reinforcing members thus used on the heater member impart improved durability to the furnace and enable the apparatus as a whole to enjoy a long service life.

    摘要翻译： 用于加热用于半导体单晶原料的坩埚的加热炉的加热器构件设置有由电绝缘性，耐热性和强度优异的诸如氧化铝或热解氮化硼的材料制成的加强构件。 当为了稳定单晶的生长而将具有交流电或脉动电流的磁场施加到单晶生长位置时，炉倾向于承受破裂。 因此，在加热器部件上使用的这些加强部件赋予炉子更高的耐久性，能使整个装置的使用寿命长。

    Apparatus for manufacturing single crystals
    56.
    发明授权
    Apparatus for manufacturing single crystals 失效
    单晶制造装置

    公开(公告)号：US4397813A

    公开(公告)日：1983-08-09

    申请号：US336708

    申请日：1982-01-04

    申请人： Syoichi Washizuka ,  Jisaburo Ushizawa ,  Yoshihiro Kokubun ,  Tsuguo Fukuda

    发明人： Syoichi Washizuka ,  Jisaburo Ushizawa ,  Yoshihiro Kokubun ,  Tsuguo Fukuda

    IPC分类号： C30B15/28 ,  C30B27/02 ,  C30B29/40 ,  H01L21/208

    CPC分类号： C30B15/28 ,  C30B27/02 ,  Y10T117/1008 ,  Y10T117/1068 ,  Y10T117/1072

    摘要： The invention provides a method and an apparatus for manufacturing single crystals wherein the weight of the single crystal pulled is measured by a weight detector. The measured weight is compared with a reference weight signal which is generated from a reference weight signal generator. A weight deviation signal representing a difference between these two signals is generated by a weight deviation detector. The weight deviation signal is differentiated by a first differentiation circuit and a differentiation output signal obtained is corrected for compensation for the buoyancy of the liquid encapsulant by a signal which is generated by a buoyancy correction signal generator. A corrected signal thus obtained is differentiated by a second differentiation circuit and is thereafter added to the corrected signal. The addition result is phase-compensated by a phase-compensating circuit. The phase-compensated signal is supplied to a heating control circuit. At the same time, the heating control circuit generates a heating control signal to a heating device in response to a program signal which is generated from a program signal generator. In response to the output signal from the heating device, a heater which controls the temperature of the melt held in a vessel and which is arranged outside the vessel is heated according to the program.

    摘要翻译： 本发明提供一种用于制造单晶的方法和装置，其中通过重量检测器测量单晶拉伸的重量。 将测量的权重与从参考权重信号发生器产生的参考权重信号进行比较。 表示这两个信号之间的差的重量偏差信号由重量偏差检测器产生。 权重偏差信号由第一微分电路区分，并且通过由浮力校正信号发生器产生的信号来校正获得的微分输出信号以补偿液体密封剂的浮力。 由此获得的校正信号由第二微分电路区分，然后加到校正信号上。 相加结果由相位补偿电路进行相位补偿。 相位补偿信号被提供给加热控制电路。 同时，加热控制电路响应于从节目信号发生器产生的节目信号，向加热装置产生加热控制信号。 响应于来自加热装置的输出信号，根据程序加热控制容器中保持的熔体的温度并设置在容器外部的加热器。