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51.发明授权公开(公告)号：US06411765B1
公开(公告)日：2002-06-25
申请号：US09533737
申请日：2000-03-23
申请人： Hideki Ono
发明人： Hideki Ono
IPC分类号： G02B610
CPC分类号： G02B6/12002 , G02B6/125 , G02B2006/12147
摘要： According to the present invention, which provides a optical waveguide element achieving high performance and high yield, that makes it possible to form a complex light-wave circuit structure without requiring a larger mounting area and a optical waveguide element manufacturing method, a optical waveguide element 100 is provided with an Si substrate 102 and a first light-wave circuit layer 112 and a second light-wave circuit layer 120 sequentially laminated on the substrate 102. At the first light-wave circuit layer 112, a first optical waveguide structure constituted of a first clad layer 104 formed toward the substrate 102, a first core portion 108 and a second clad layer 110 formed toward the second light-wave circuit layer 120 is achieved. In addition, at the second light-wave circuit layer 120, a second optical waveguide structure constituted of a second core portion 116 and a third clad layer 118 at the second light-wave circuit layer 120 is achieved. Since the first light-wave circuit layer 112 and the second light-wave circuit layer 120 are directly laminated, a directional optical coupling is induced between the first core portion 108 and the second core portion 116.
摘要翻译： 根据本发明，其提供了实现高性能和高产量的光波导元件，这使得可以形成复杂的光波形电路结构而不需要较大的安装面积和光波导元件制造方法，光波导元件 100设置有Si衬底102和顺序层压在衬底102上的第一光波电路层112和第二光波电路层120.在第一光波电路层112处，第一光波导结构由 实现朝向基板102形成的第一覆盖层104，朝向第二光波电路层120形成的第一芯部分108和第二覆盖层110。 此外，在第二光波电路层120处，实现了在第二光波电路层120处由第二芯部116和第三包层118构成的第二光波导结构。 由于第一光波电路层112和第二光波电路层120直接层叠，因此在第一芯部108和第二芯部116之间产生定向光耦合。
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52.发明授权公开(公告)号：US06353088B1
公开(公告)日：2002-03-05
申请号：US09646574
申请日：2000-09-19
IPC分类号： C08F600
CPC分类号： C08F6/003
摘要： This invention relates to a method for removing unreacted monomers and other volatile matters from a polymer solution composition produced from a mixture containing an aromatic vinyl monomer, utilizes two or more flash devolatilizing vessels, and effects the removal by adjusting the solid content of the polymer solution composition at the outlet of the devolitilizer before the last-stage devolitilizer to a level in excess of 97%, adding 0.5-4 parts by weight of a foaming agent to the total polymer solution composition, passing the polymer solution composition through the last-stage devolitilizer while maintaining the pressure of the polymer solution at 10 kg/cm2 or more by means of a pressure controller and the temperature in the range 190-260° C., introducing the polymer solution composition to a vapor-liquid separation vessel maintained at a vacuum of 20 Torr or less, and allowing the composition to foam.
摘要翻译： 本发明涉及从由含有芳香族乙烯基单体的混合物制备的聚合物溶液组合物中除去未反应的单体和其它挥发物的方法，利用两个或更多个闪蒸脱挥发容器，并通过调节聚合物溶液的固体含量 在最后阶段脱挥发酵剂之前的脱挥发剂的出口处的组成达到超过97％的水平，向总的聚合物溶液组合物中加入0.5-4重量份的发泡剂，使聚合物溶液组合物通过最后阶段 通过压力控制器和190-260℃的温度将聚合物溶液的压力保持在10kg / cm 2或更高的压力下，将聚合物溶液组合物引入保持在 真空度为20托或更低，并使组合物发泡。
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公开(公告)号：US6096374A
公开(公告)日：2000-08-01
申请号：US138667
申请日：1998-08-24
申请人： Masayuki Ohta , Takehiko Iwaoka , Fumiaki Arai , Hiroshi Tateishi , Masanori Rimoto , Hideki Ono , Tetsuo Tanaka , Yuji Natori
发明人： Masayuki Ohta , Takehiko Iwaoka , Fumiaki Arai , Hiroshi Tateishi , Masanori Rimoto , Hideki Ono , Tetsuo Tanaka , Yuji Natori
CPC分类号： B32B37/24 , B41C1/144 , B41N1/242 , B41N1/243 , B32B2305/026 , Y10T428/24322 , Y10T428/24331 , Y10T428/24802
摘要： A heat-sensitive stencil having a thermoplastic resin film, and a porous resin layer formed thereon. The stencil has an air permeability in the range of 1.0 cm.sup.3 /cm.sup.2 .multidot.sec to 157 cm.sup.3 /cm.sup.2 .multidot.sec in a portion thereof when the thermoplastic resin film of the portion is perforated to form perforations providing an open ratio S.sub.O /S.sub.P of at least 0.2, wherein S.sub.O represents a total area of the perforations and S.sub.P represents the area of the portion. The heat-sensitive stencil is prepared by applying a coating liquid containing the resin of the porous resin layer to the thermoplastic resin film and drying the coating. The coating liquid contains a mixture of a good solvent and a poor solvent less vaporizable than the good solvent so that the porous resin layer is formed after drying.
摘要翻译： 具有热塑性树脂膜的热敏模版和形成在其上的多孔树脂层。 当该部分的热塑性树脂膜被穿孔以形成提供至少为0.2的开放比率SO / SP的穿孔时，该模版的透气度在1.0cm 3 / cm 2×sec至157cm 3 / cm 2·sec的范围内，其中SO 表示穿孔的总面积，SP表示该部分的面积。 通过将含有多孔树脂层的树脂的涂布液涂布到热塑性树脂膜上并干燥该涂层来制备热敏模版。 涂布液含有良溶剂和不良溶剂不良溶剂的混合物，从而在干燥后形成多孔树脂层。
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公开(公告)号：US09683557B2
公开(公告)日：2017-06-20
申请号：US14002145
申请日：2011-03-07
申请人： Takuya Yoshida , Naoyuki Nagafuchi , Hideki Ono
发明人： Takuya Yoshida , Naoyuki Nagafuchi , Hideki Ono
CPC分类号： F03G6/003 , F01K3/004 , F01K3/16 , F01K3/18 , F03G6/00 , F03G6/005 , F03G6/065 , F03G6/067 , F24S20/20 , F24S60/00 , Y02E10/44 , Y02E10/46
摘要： An object of the present invention is to provide a solar heat steam cycle system capable of operating efficiently and stably in keeping with the status of collected or stored heat, and a control method for use with the system.The system includes a heat collector (1) which collects solar thermal energy, a thermal storage device (2) which stores the solar thermal energy collected by the heat collector, a feed water heater (3) which heats feed water, an evaporator (4) which evaporates the feed water supplied from the feed water heater, and a steam turbine (6) driven by steam generated by the evaporator. The system includes a control valve (31) which controls allocations of heating medium supplied from the thermal storage device to the evaporator and the feed water heater.
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55.发明申请公开(公告)号：US20130008827A1
公开(公告)日：2013-01-10
申请号：US13636182
申请日：2011-03-24
CPC分类号： C10G45/64 , B01J29/7461 , B01J29/7484 , B01J29/7492 , B01J29/7661 , B01J29/7684 , B01J29/7692 , B01J29/7861 , B01J29/7884 , B01J29/7892 , B01J37/0009 , B01J37/0201 , B01J37/18 , B01J37/30 , B01J2229/20 , B01J2229/42 , C07C5/2708 , C07C5/2775 , C10G45/62 , C10G65/043 , C10G2300/1022 , C10G2300/107 , C10G2300/1074 , C10G2300/1077 , C10G2300/1081 , C10G2300/30 , C10G2300/70 , C10G2400/10
摘要： The hydroisomerization catalyst of the present invention is a catalyst used for hydroisomerization of a hydrocarbon, including a support including a calcined zeolite modified with at least one metal selected from the group consisting of Na, K, Cs, Mg, Ca, Ba, and K, and having a thermal history that includes heating at 350° C. or more, and at least one inorganic oxide selected from the group consisting of alumina, silica, titania, boria, zirconia, magnesia, ceria, zinc oxide, phosphorus oxide, and a composite oxide containing a combination of at least two or more of these oxides; and at least one metal supported on the support and selected from the group consisting of elements belonging to Groups 8 to 10 of the periodic table, molybdenum and tungsten.
摘要翻译： 本发明的加氢异构化催化剂是用于烃的加氢异构化的催化剂，包括含有由选自Na，K，Cs，Mg，Ca，Ba和K中的至少一种金属改性的煅烧沸石的载体 并且具有包括在350℃以上的加热的热历史，以及选自氧化铝，二氧化硅，二氧化钛，氧化硼，氧化锆，氧化镁，二氧化铈，氧化锌，氧化磷和氧化铝中的至少一种无机氧化物 包含这些氧化物中的至少两种以上的组合的复合氧化物; 以及至少一种负载在载体上并选自元素周期表第8至10族的元素，钼和钨的金属。
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公开(公告)号：US20120292758A1
公开(公告)日：2012-11-22
申请号：US13465748
申请日：2012-05-07
申请人： Hideki Ono
发明人： Hideki Ono
IPC分类号： H01L23/48
CPC分类号： H01L51/0545 , H01L51/0018 , H01L51/105 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor element including an organic semiconductor layer and a layer disposed on the upper surface of the organic semiconductor layer, wherein the outline of the layer is inside the outline of the organic semiconductor layer.
摘要翻译： 一种半导体元件，包括有机半导体层和设置在有机半导体层的上表面上的层，其中该层的轮廓在有机半导体层的轮廓内。
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57.发明授权公开(公告)号：US08258514B2
公开(公告)日：2012-09-04
申请号：US12913912
申请日：2010-10-28
申请人： Akihiro Nomoto , Hideki Ono
发明人： Akihiro Nomoto , Hideki Ono
IPC分类号： H01L33/16
CPC分类号： H01L51/102 , H01L27/283 , H01L51/0023 , H01L51/0545
摘要： Disclosed herein is a semiconductor device which employs a thin-film transistor. In addition, the semiconductor device has a gate electrode, a gate insulation film, an organic semiconductor layer, a structure, a source electrode, a drain electrode, and an electrode material layer.
摘要翻译： 这里公开了采用薄膜晶体管的半导体器件。 此外，半导体器件具有栅电极，栅极绝缘膜，有机半导体层，结构，源电极，漏电极和电极材料层。
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公开(公告)号：US08226921B2
公开(公告)日：2012-07-24
申请号：US13158008
申请日：2011-06-10
申请人： Takashi Oyama , Kazuhisa Nakanishi , Tamotsu Tano , Keiji Higashi , Ippei Fujinaga , Hiromitsu Hashisaka , Toshitaka Fujii , Takashi Noro , Akio Sakamoto , Kiwamu Takeshita , Keizou Ikai , Masaki Fujii , Hideki Ono
发明人： Takashi Oyama , Kazuhisa Nakanishi , Tamotsu Tano , Keiji Higashi , Ippei Fujinaga , Hiromitsu Hashisaka , Toshitaka Fujii , Takashi Noro , Akio Sakamoto , Kiwamu Takeshita , Keizou Ikai , Masaki Fujii , Hideki Ono
IPC分类号： C01B31/00 , C01B31/04 , C01B57/04 , C01B53/00 , H01G4/00 , H01G9/00 , C01G1/00 , C01G17/00 , C01C3/00
摘要： The present invention provides a raw coke having such a structure that the graphitized product resulting from graphitization of the raw coke at a temperature of 2800° C. under an inactive gas atmosphere will have ratios of the crystallite size to the lattice constant of 360 or less in the (002) plane and 1500 or less in the (110) plane, as a raw coke providing active carbon produced by alkali-activating the raw coke, which is reduced in remaining alkali content and can simplify washing operation because washing liquid can easily pass through the activated carbon, or as a raw coke for the production of needle coke.
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公开(公告)号：US08148238B2
公开(公告)日：2012-04-03
申请号：US12379827
申请日：2009-03-03
申请人： Satoshi Taniguchi , Nobuhiro Suzuki , Hideki Ono
发明人： Satoshi Taniguchi , Nobuhiro Suzuki , Hideki Ono
IPC分类号： H01L21/30
CPC分类号： H01L29/205 , H01L21/02392 , H01L21/02463 , H01L21/02543 , H01L21/30612 , H01L29/66318 , H01L33/0079 , H01L33/02
摘要： There is provided a method of manufacturing a semiconductor device which, in the case where an InP-based device is formed with a sacrificial layer in between, is capable of obtaining better device characteristics than those in the case where an AlAs single layer is used as the sacrificial layer, and which does not have the possibility that the device layer is etched together with the sacrificial layer during etching of the sacrificial layer. A method of manufacturing a semiconductor device includes: a formation step of forming a sacrificial layer which is pseudomorphic to InP on an InP substrate, and then forming an InP-based device layer on the sacrificial layer; and a separation step of separating the InP substrate and the device layer from each other by etching the sacrificial layer.
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公开(公告)号：US20090268375A1
公开(公告)日：2009-10-29
申请号：US12158165
申请日：2006-12-27
申请人： Takashi Oyama , Kazuhisa Nakanishi , Tamotsu Tano , Keiji Higashi , Ippei Fujinaga , Hiromitsu Hashisaka , Toshitaka Fujii , Takashi Noro , Akio Sakamoto , Kiwamu Takeshita , Keizou Ikai , Masaki Fujii , Hideki Ono
发明人： Takashi Oyama , Kazuhisa Nakanishi , Tamotsu Tano , Keiji Higashi , Ippei Fujinaga , Hiromitsu Hashisaka , Toshitaka Fujii , Takashi Noro , Akio Sakamoto , Kiwamu Takeshita , Keizou Ikai , Masaki Fujii , Hideki Ono
摘要： The present invention provides a raw coke having such a structure that the graphitized product resulting from graphitization of the raw coke at a temperature of 2800° C. under an inactive gas atmosphere will have ratios of the crystallite size to the lattice constant of 360 or less in the (002) plane and 1500 or less in the (110) plane, as a raw coke providing active carbon produced by alkali-activating the raw coke, which is reduced in remaining alkali content and can simplify washing operation because washing liquid can easily pass through the activated carbon, or as a raw coke for the production of needle coke.
摘要翻译： 本发明提供一种具有这样一种结构的原焦炭，即在惰性气体气氛下，在2800℃的温度下由原焦炭石墨化产生的石墨化产物将使微晶尺寸与晶格常数之比为360以下 在（002）面中，在（110）面中为1500以下的原料焦炭，作为提供通过碱活化生焦炭生成的活性炭的原焦炭，其还原了剩余的碱含量，并且可以简化洗涤操作，因为洗涤液容易 通过活性炭，或作为用于生产针状焦的原焦炭。
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