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    Robust pierce gun having multiple transmitting and emitting section
    53.
    发明授权
    Robust pierce gun having multiple transmitting and emitting section 失效
    坚固的穿孔枪具有多个发射和发射部分

    公开(公告)号：US06642657B2

    公开(公告)日：2003-11-04

    申请号：US09992694

    申请日：2001-11-20

    Applicant: Frederick M. Mako ,  Amnon Fisher

    Inventor： Frederick M. Mako ,  Amnon Fisher

    IPC: H01J2306

    CPC classification number: H01J3/023 ,  H01J23/06 ,  H01J2201/3423

    Abstract: An electron gun that generate an electron flow and the application of this gun to produce rf energy or for injectors. The electron gun includes an electrostatic cavity having a first stage with emitting faces and multiple stages with emitting sections. The gun also includes a mechanism for producing an electrostatic force which encompasses the emitting faces and the multiple emitting sections so electrons are directed from the emitting faces toward the emitting sections to contact the emitting sections and generate additional electrons and to further contact other emitting sections to generate additional electrons and so on then finally to escape the end of the cavity. A method for producing a flow of electrons.

    Abstract translation: 产生电子流的电子枪以及该枪用于产生射流能量或喷射器的应用。 电子枪包括具有发射面的第一级和具有发射部的多级的静电腔。 枪还包括用于产生静电力的机构，其包围发射面和多个发射部分，使得电子从发射面朝向发射部分引导以接触发射部分并产生附加电子并且进一步接触其它发射部分 产生额外的电子等等，然后最终逃离空腔的末端。 一种产生电子流的方法。

    Cathode structure for reduced emission and robust handling properties
    54.
    发明授权
    Cathode structure for reduced emission and robust handling properties 失效
    阴极结构，减少排放和强大的处理性能

    公开(公告)号：US6146229A

    公开(公告)日：2000-11-14

    申请号：US080424

    申请日：1998-05-18

    Applicant: Arlynn W. Smith ,  Warren David Vrescak

    Inventor： Arlynn W. Smith ,  Warren David Vrescak

    IPC: H01J1/34 ,  H01J9/12 ,  H01J9/02

    CPC classification number: H01J9/12 ,  H01J1/34 ,  H01J2201/3423 ,  H01J2231/5001

    Abstract: A photocathode device for use in an image intensifier, fabricated with a photoemissive semiconductor wafer having an active cathode layer which includes a central region of a first predetermined height surrounded by a peripheral region of a second predetermined height. The first predetermined height of the central region is configured to be greater than the second predetermined height of the peripheral region in order to create a recessed contact structure which is less likely to have unwanted emission points. A layer of conductive material covers the peripheral region to provide an electrical contact to the photocathode device. A layer of insulating material covers the layer of conductive material in order to protect the contact layer from being damage during handling operations.

    Abstract translation: 一种用于图像增强器的光电阴极器件，其由具有活性阴极层的发光半导体晶片制造，所述活性阴极层包括由第二预定高度的周边区域包围的第一预定高度的中心区域。 中心区域的第一预定高度被配置为大于周边区域的第二预定高度，以便产生不太可能具有不需要的发射点的凹陷接触结构。 一层导电材料覆盖周边区域以提供与光电阴极器件的电接触。 一层绝缘材料覆盖导电材料层，以保护接触层在操作过程中不被损坏。

    Method of making thin-film continuous dynodes for electron multiplication
    56.
    发明授权
    Method of making thin-film continuous dynodes for electron multiplication 失效
    制造电子倍增的薄膜连续倍增极的方法

    公开(公告)号：US5726076A

    公开(公告)日：1998-03-10

    申请号：US365242

    申请日：1994-12-28

    Applicant: G. William Tasker ,  Jerry Randall Horton

    Inventor： G. William Tasker ,  Jerry Randall Horton

    IPC: H01J9/12 ,  H01J43/24 ,  H01J49/02 ,  H01J41/00

    CPC classification number: H01J43/246 ,  H01J49/025 ,  H01J9/12 ,  H01J2201/32 ,  H01J2201/3423

    Abstract: The invention is directed to continuous dynodes formed by thin-film processing techniques. According to one embodiment of the invention, a continuous dynode is formed by reacting a chemical vapor in the presence of a substrate at a temperature and pressure sufficient to result in chemical vapor deposition. In another embodiment, the layer is formed by liquid phase deposition and in another embodiment, the layer is formed by nitriding or oxidizing a substrate.

    Abstract translation: 本发明涉及通过薄膜加工技术形成的连续倍增极。 根据本发明的一个实施方案，通过在足以导致化学气相沉积的温度和压力下在基板存在下使化学气相反应形成连续的倍增极。 在另一个实施方案中，该层通过液相沉积形成，并且在另一个实施方案中，该层通过氮化或氧化底物而形成。

    Photoemitter electron tube and photodetector
    57.
    发明授权
    Photoemitter electron tube and photodetector 失效
    Photoemitter电子管和光电探测器

    公开(公告)号：US5591986A

    公开(公告)日：1997-01-07

    申请号：US299664

    申请日：1994-09-02

    Applicant: Minoru Niigaki ,  Toru Hirohata ,  Tuneo Ihara ,  Masami Yamada

    Inventor： Minoru Niigaki ,  Toru Hirohata ,  Tuneo Ihara ,  Masami Yamada

    IPC: H01J1/34 ,  H01L27/14 ,  H01J31/00 ,  H01L29/49

    CPC classification number: H01J1/34 ,  H01J2201/3423

    Abstract: The present invention provides a photoemission device excellent in quantum efficiency of photoelectric conversion, a high-sensitive electron tube employing it, and a high-sensitive photodetecting apparatus. A photoemission device of the present invention is arranged to have a photon absorbing layer for absorbing incident photons to excite photoelectrons, an insulator layer layered on one surface of the photon absorbing layer, a lead electrode layered on the insulator layer, and a contact formed on the other surface of the photon absorbing layer to apply a predetermined polarity voltage between the lead electrode and the other surface of the photon absorbing layer, whereby the photoelectrons excited by the incident photons entering the photon absorbing layer and moving toward the one side are made to be emitted by an electric field formed between the lead electrode and the one surface by the predetermined polarity voltage.

    Abstract translation: 本发明提供了一种光电转换量子效率优异的使用它的高灵敏度电子管和高灵敏度光电检测装置的光电发射装置。 本发明的发光装置被配置为具有用于吸收入射光子以激发光电子的光子吸收层，层叠在光子吸收层的一个表面上的绝缘体层，层叠在绝缘体层上的引线电极和形成在 光子吸收层的另一个表面，以在引线电极和光子吸收层的另一个表面之间施加预定的极性电压，由此进入光子吸收层并朝向一侧移动的入射光子激发的光电子被制成 由形成在引线电极和一个表面之间的电场发射预定的极性电压。

    Process of emitting highly spin-polarized electron beam and semiconductor device therefor
    58.
    发明授权
    Process of emitting highly spin-polarized electron beam and semiconductor device therefor 失效
    发射高自旋极化电子束的工艺及其半导体器件

    公开(公告)号：US5523572A

    公开(公告)日：1996-06-04

    申请号：US410760

    申请日：1995-03-27

    Applicant: Tsutomu Nakanishi ,  Hiromichi Horinaka ,  Takashi Saka ,  Toshihiro Kato

    Inventor： Tsutomu Nakanishi ,  Hiromichi Horinaka ,  Takashi Saka ,  Toshihiro Kato

    IPC: H01J1/34 ,  H01J3/02 ,  H01J37/00

    CPC classification number: H01J1/34 ,  H01J3/021 ,  H01J2201/3423 ,  H01J2203/0296

    Abstract: A process of producing a highly spin-polarized electron beam, including the steps of applying a light energy to a semiconductor device comprising a first compound semiconductor layer having a first lattice constant and a second compound semiconductor layer having a second lattice constant different from the first lattice constant, the second semiconductor layer being in junction contact with the first semiconductor layer to provide a strained semiconductor heterostructure, a magnitude of mismatch between the first and second lattice constants defining an energy splitting between a heavy hole band and a light hole band in the second semiconductor layer, such that the energy splitting is greater than a thermal noise energy in the second semiconductor layer in use; and extracting the highly spin-polarized electron beam from the second semiconductor layer upon receiving the light energy. A semiconductor device for emitting, upon receiving a light energy, a highly spin-polarized electron beam, including a first compound semiconductor layer formed of gallium arsenide phosphide, GaAs.sub.1-x P.sub.x, and having a first lattice constant; and a second compound semiconductor layer provided on the first semiconductor layer, the second semiconductor layer having a second lattice constant different from the first lattice constant and a thickness, t, smaller than the thickness of the first semiconductor layer.

    Abstract translation: 一种生产高自旋极化电子束的方法，包括以下步骤：向包括具有第一晶格常数的第一化合物半导体层和具有不同于第一晶格常数的第二晶格常数的第二化合物半导体层的半导体器件施加光能 晶格常数，所述第二半导体层与所述第一半导体层接触接触以提供应变的半导体异质结构，所述第一和第二晶格常数之间的失配量的大小限定了所述第一和第二晶格常数之间的重孔带和所述光孔带之间的能量分裂 第二半导体层，使得能量分裂大于使用中的第二半导体层中的热噪声能量; 以及在接收到光能时从第二半导体层提取高自旋极化的电子束。 一种半导体器件，用于在接收到光能时发射包括由砷化镓磷化物GaAs1-xPx形成的并具有第一晶格常数的第一化合物半导体层的高度自旋极化的电子束; 以及设置在所述第一半导体层上的第二化合物半导体层，所述第二半导体层具有与所述第一晶格常数不同的第二晶格常数和小于所述第一半导体层的厚度的厚度t。

    Infrared-sensitive photocathode
    59.
    发明授权
    Infrared-sensitive photocathode 失效
    红外敏感光电阴极

    公开(公告)号：US5404026A

    公开(公告)日：1995-04-04

    申请号：US004766

    申请日：1993-01-14

    Applicant: Raymond P. Mariella, Jr. ,  Gregory A. Cooper

    Inventor： Raymond P. Mariella, Jr. ,  Gregory A. Cooper

    IPC: H01J1/34 ,  H01L29/161 ,  H01L29/205

    CPC classification number: H01J1/34 ,  H01J2201/3423

    Abstract: A single-crystal, multi-layer device incorporating an IR absorbing layer that is compositionally different from the Ga.sub.x Al.sub.1-x Sb layer which acts as the electron emitter. Many different IR absorbing layers can be envisioned for use in this embodiment, limited only by the ability to grow quality material on a chosen substrate. A non-exclusive list of possible IR absorbing layers would include GaSb, InAs and InAs/Ga.sub.w In.sub.y Al.sub.1-y-w Sb superlattices. The absorption of the IR photon excites an electron into the conduction band of the IR absorber. An externally applied electric field then transports electrons from the conduction band of the absorber into the conduction band of the Ga.sub.x Al.sub.1-x Sb, from which they are ejected into vacuum. Because the band alignments of Ga.sub.x Al.sub.1-x Sb can be made the same as that of GaAs, emitting efficiencies comparable to GaAs photocathodes are obtainable. The present invention provides a photocathode that is responsive to wavelengths within the range of 0.9 .mu.m to at least 10 .mu.m.

    Abstract translation: 结合了IR吸收层的单晶多层器件，该吸收层在组成上不同于充当电子发射体的GaxAl1-xSb层。 可以设想许多不同的IR吸收层用于该实施方案中，这仅限于在所选择的基底上生长优质材料的能力。 可能的IR吸收层的非排他性列表将包括GaSb，InAs和InAs / GawInyAl1-y-wSb超晶格。 IR光子的吸收激发电子进入IR吸收体的导带。 外部施加的电场然后将电子从吸收器的导带传输到GaxAl1-xSb的导带，从它们被喷射到真空中。 因为GaxAl1-xSb的带对准可以与GaAs相同，所以可获得与GaAs光电阴极相当的发射效率。 本发明提供一种响应波长在0.9μm至至少10μm之间的光电阴极。

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