公开(公告)号：US09831101B2

公开(公告)日：2017-11-28

申请号：US15149464

申请日：2016-05-09

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Toshinari Sasaki ,  Junichiro Sakata ,  Hiroki Ohara ,  Shunpei Yamazaki

IPC分类号： H01L21/00 ,  H01L21/477 ,  H01L21/02 ,  H01L21/383 ,  H01L21/46 ,  H01L29/66 ,  H01L29/786 ,  H01L27/12

CPC分类号： H01L21/477 ,  H01L21/02565 ,  H01L21/02664 ,  H01L21/383 ,  H01L21/46 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

摘要： An object is to manufacture a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which an oxide semiconductor film is used for a semiconductor layer including a channel formation region, heat treatment (for dehydration or dehydrogenation) is performed to improve the purity of the oxide semiconductor film and reduce impurities including moisture or the like. After that, slow cooling is performed under an oxygen atmosphere. Besides impurities including moisture or the like exiting in the oxide semiconductor film, heat treatment causes reduction of impurities including moisture or the like exiting in a gate insulating layer and those in interfaces between the oxide semiconductor film and films which are provided over and below the oxide semiconductor and in contact therewith.

公开(公告)号：US20170141231A1

公开(公告)日：2017-05-18

申请号：US15321975

申请日：2015-06-24

申请人： JOLED INC.

发明人： Mitsutaka MATSUMOTO ,  Arinobu KANEGAE

IPC分类号： H01L29/786 ,  H01L21/385 ,  H01L21/383 ,  H01L29/24 ,  H01L29/66

CPC分类号： H01L29/7869 ,  H01L21/383 ,  H01L21/385 ,  H01L21/471 ,  H01L21/473 ,  H01L27/1225 ,  H01L27/1266 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78696 ,  H01L51/50

摘要： A thin film transistor includes: a substrate; an undercoat layer disposed on the substrate; an oxide semiconductor layer formed above the undercoat layer and including at least indium; a gate insulating layer located opposite the undercoat layer with the oxide semiconductor layer being between the gate insulating layer and the undercoat layer; a gate electrode located opposite the oxide semiconductor layer with the gate insulating layer being between the gate electrode and the oxide semiconductor layer; and a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, wherein fluorine is included in a region which is an internal region in the oxide semiconductor layer and is close to the undercoat layer.

公开(公告)号：US20170117305A1

公开(公告)日：2017-04-27

申请号：US15399154

申请日：2017-01-05

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Junichi KOEZUKA ,  Naoto YAMADE ,  Yuhei SATO ,  Yutaka OKAZAKI ,  Shunpei YAMAZAKI

IPC分类号： H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  H01L21/477

CPC分类号： H01L27/1274 ,  H01L21/02565 ,  H01L21/02609 ,  H01L21/02667 ,  H01L21/383 ,  H01L21/44 ,  H01L21/477 ,  H01L27/1225 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

摘要： A semiconductor device using an oxide semiconductor is provided with stable electric characteristics to improve the reliability. In a manufacturing process of a transistor including an oxide semiconductor film, an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a first crystalline oxide semiconductor film) is formed; oxygen is added to the oxide semiconductor film to amorphize at least part of the oxide semiconductor film, so that an amorphous oxide semiconductor film containing an excess of oxygen is formed; an aluminum oxide film is formed over the amorphous oxide semiconductor film; and heat treatment is performed thereon to crystallize at least part of the amorphous oxide semiconductor film, so that an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a second crystalline oxide semiconductor film) is formed.

公开(公告)号：US20170033227A1

公开(公告)日：2017-02-02

申请号：US15225592

申请日：2016-08-01

申请人： Gang Yu ,  Chan-Long Shieh ,  Tian Xiao ,  Fatt Foong

发明人： Gang Yu ,  Chan-Long Shieh ,  Tian Xiao ,  Fatt Foong

IPC分类号： H01L29/786 ,  H01L23/00 ,  H01L23/31 ,  H01L29/49

CPC分类号： H01L29/7869 ,  H01L21/321 ,  H01L21/324 ,  H01L21/383 ,  H01L21/428 ,  H01L21/44 ,  H01L21/47635 ,  H01L21/477 ,  H01L21/823418 ,  H01L23/3171 ,  H01L23/564 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/78696 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method including providing a substrate with a gate, a layer of gate insulator material adjacent the gate, and a layer of metal oxide semiconductor material positioned on the gate insulator opposite the gate, forming a selectively patterned etch stop passivation layer and heating at elevated temperature in an oxygen-containing or nitrogen-containing or inert ambience to selectively increase the carrier concentration in regions of the metal oxide semiconductor not covered by the etch stop layer, on which overlying and spaced apart source/drain metals are formed. Subsequently heating the transistor in an oxygen-containing or nitrogen-containing or inert ambience to further improve the source/drain contacts and adjust the threshold voltage to a desired level. Providing additional passivation layer(s) on top of the transistor with electric insulation and barrier property to moisture and chemicals in the surrounding environment.

摘要翻译： 一种方法，包括提供具有栅极的衬底，与栅极相邻的栅极绝缘体材料层和位于与栅极相对的栅极绝缘体上的金属氧化物半导体材料层，形成选择性图案化的蚀刻停止钝化层并在高温下加热 在含氧或含氮或惰性气氛中选择性地增加未被蚀刻停止层覆盖的金属氧化物半导体的区域中的载流子浓度，其上形成有上层和间隔开的源极/漏极金属。 随后在含氧或含氮或惰性气氛中加热晶体管，以进一步改善源极/漏极接触，并将阈值电压调节到期望的水平。 在晶体管的顶部提供额外的钝化层，具有电气绝缘和对周围环境中的潮湿和化学物质的阻隔性能。

公开(公告)号：US09543145B2

公开(公告)日：2017-01-10

申请号：US15046962

申请日：2016-02-18

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Junichi Koezuka ,  Naoto Yamade ,  Yuhei Sato ,  Yutaka Okazaki ,  Shunpei Yamazaki

IPC分类号： H01L21/00 ,  H01L21/02 ,  H01L29/786 ,  H01L29/66 ,  H01L21/383 ,  H01L21/44 ,  H01L21/477 ,  H01L27/12

CPC分类号： H01L27/1274 ,  H01L21/02565 ,  H01L21/02609 ,  H01L21/02667 ,  H01L21/383 ,  H01L21/44 ,  H01L21/477 ,  H01L27/1225 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

摘要： A semiconductor device using an oxide semiconductor is provided with stable electric characteristics to improve the reliability. In a manufacturing process of a transistor including an oxide semiconductor film, an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a first crystalline oxide semiconductor film) is formed; oxygen is added to the oxide semiconductor film to amorphize at least part of the oxide semiconductor film, so that an amorphous oxide semiconductor film containing an excess of oxygen is formed; an aluminum oxide film is formed over the amorphous oxide semiconductor film; and heat treatment is performed thereon to crystallize at least part of the amorphous oxide semiconductor film, so that an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a second crystalline oxide semiconductor film) is formed.

摘要翻译： 使用氧化物半导体的半导体器件具有稳定的电特性以提高可靠性。 在包括氧化物半导体膜的晶体管的制造工艺中，形成含有基本上垂直于其顶表面的c轴的晶体（也称为第一晶体氧化物半导体膜）的氧化物半导体膜; 氧化物被添加到氧化物半导体膜中以使至少部分氧化物半导体膜非晶化，从而形成含有过量氧的非晶氧化物半导体膜; 在非晶氧化物半导体膜上形成氧化铝膜; 在其上进行热处理以使非晶氧化物半导体膜的至少一部分结晶，使得含有具有基本上垂直于其顶表面的c轴的晶体的氧化物半导体膜（也称为第二结晶氧化物半导体膜 ） 形成了。

公开(公告)号：US09412623B2

公开(公告)日：2016-08-09

申请号：US14833462

申请日：2015-08-24

申请人： Gang Yu ,  Chan-Long Shieh ,  Tian Xiao ,  Fatt Foong

发明人： Gang Yu ,  Chan-Long Shieh ,  Tian Xiao ,  Fatt Foong

IPC分类号： H01L21/383 ,  H01L29/786 ,  H01L29/49 ,  H01L29/66 ,  H01L23/00 ,  H01L21/8234 ,  H01L21/4763 ,  H01L21/324 ,  H01L21/321 ,  H01L21/477 ,  H01L21/428 ,  H01L29/45

CPC分类号： H01L29/7869 ,  H01L21/321 ,  H01L21/324 ,  H01L21/383 ,  H01L21/428 ,  H01L21/44 ,  H01L21/47635 ,  H01L21/477 ,  H01L21/823418 ,  H01L23/3171 ,  H01L23/564 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/78696 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method including providing a substrate with a gate, a layer of gate insulator material adjacent the gate, and a layer of metal oxide semiconductor material positioned on the gate insulator opposite the gate, forming a selectively patterned etch stop passivation layer and heating at elevated temperature in an oxygen-containing or nitrogen-containing or inert ambience to selectively increase the carrier concentration in regions of the metal oxide semiconductor not covered by the etch stop layer, on which overlying and spaced apart source/drain metals are formed. Subsequently heating the transistor in an oxygen-containing or nitrogen-containing or inert ambience to further improve the source/drain contacts and adjust the threshold voltage to a desired level. Providing additional passivation layer(s) on top of the transistor with electric insulation and barrier property to moisture and chemicals in the surrounding environment.

摘要翻译： 一种方法，包括提供具有栅极的衬底，与栅极相邻的栅极绝缘体材料层和位于与栅极相对的栅极绝缘体上的金属氧化物半导体材料层，形成选择性图案化的蚀刻停止钝化层并在高温下加热 在含氧或含氮或惰性气氛中选择性地增加未被蚀刻停止层覆盖的金属氧化物半导体的区域中的载流子浓度，其上形成有上层和间隔开的源极/漏极金属。 随后在含氧或含氮或惰性气氛中加热晶体管，以进一步改善源极/漏极接触并将阈值电压调节到所需的电平。 在晶体管的顶部提供额外的钝化层，具有电气绝缘和对周围环境中的潮湿和化学物质的阻隔性能。

公开(公告)号：US20150380529A1

公开(公告)日：2015-12-31

申请号：US14831972

申请日：2015-08-21

申请人： SEMICONDUCTOR ENERGY LABORARTORY CO., LTD.

发明人： Atsuo ISOBE ,  Kunio HOSOYA

IPC分类号： H01L29/66 ,  H01L21/02 ,  H01L21/4757 ,  H01L29/51 ,  H01L29/49 ,  H01L21/383 ,  H01L21/425 ,  H01L29/24 ,  H01L29/786 ,  H01L21/441

CPC分类号： H01L29/66969 ,  H01L21/02178 ,  H01L21/02244 ,  H01L21/0237 ,  H01L21/02565 ,  H01L21/383 ,  H01L21/425 ,  H01L21/441 ,  H01L21/47573 ,  H01L27/10873 ,  H01L27/1108 ,  H01L27/1156 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/495 ,  H01L29/517 ,  H01L29/7869

摘要： To improve productivity of a transistor that includes an oxide semiconductor and has good electrical characteristics. In a top-gate transistor including a gate insulating film and a gate electrode over an oxide semiconductor film, a metal film is formed over the oxide semiconductor film, oxygen is added to the metal film to form a metal oxide film, and the metal oxide film is used as a gate insulating film. After an oxide insulating film is formed over the oxide semiconductor film, a metal film may be formed over the oxide insulating film. Oxygen is added to the metal film to form a metal oxide film and added also to the oxide semiconductor film or the oxide insulating film.

摘要翻译： 为了提高包含氧化物半导体的晶体管的生产率，具有良好的电气特性。 在包括氧化物半导体膜上的栅绝缘膜和栅电极的顶栅晶体管中，在氧化物半导体膜上形成金属膜，向金属膜中添加氧以形成金属氧化物膜，并且金属氧化物 膜用作栅极绝缘膜。 在氧化物半导体膜上形成氧化物绝缘膜之后，可以在氧化物绝缘膜上形成金属膜。 向金属膜中添加氧以形成金属氧化物膜，并且还添加到氧化物半导体膜或氧化物绝缘膜。

公开(公告)号：US20150243768A1

公开(公告)日：2015-08-27

申请号：US14710675

申请日：2015-05-13

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Shunpei Yamazaki

IPC分类号： H01L29/66 ,  H01L29/24 ,  H01L21/441 ,  H01L21/477 ,  H01L21/383 ,  H01L29/786 ,  H01L21/02

CPC分类号： H01L29/66969 ,  H01L21/02175 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/383 ,  H01L21/441 ,  H01L21/473 ,  H01L21/47576 ,  H01L21/477 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/78606 ,  H01L29/7869

摘要： A semiconductor device using an oxide semiconductor, with stable electric characteristics and high reliability. In a process for manufacturing a bottom-gate transistor including an oxide semiconductor film, dehydration or dehydrogenation is performed by heat treatment and oxygen doping treatment is performed. The transistor including the oxide semiconductor film subjected to the dehydration or dehydrogenation by the heat treatment and the oxygen doping treatment is a transistor having high reliability in which the amount of change in threshold voltage of the transistor by the bias-temperature stress test (BT test) can be reduced.

摘要翻译： 一种使用氧化物半导体的半导体器件，具有稳定的电气特性和高可靠性。 在制造包括氧化物半导体膜的底栅晶体管的工艺中，通过热处理进行脱水或脱氢，并进行氧掺杂处理。 包括通过热处理和氧掺杂处理进行脱水或脱氢的氧化物半导体膜的晶体管是具有高可靠性的晶体管，其中通过偏置 - 温度应力测试（BT测试）晶体管的阈值电压的变化量 ）可以减少。

公开(公告)号：US20150179774A1

公开(公告)日：2015-06-25

申请号：US14570422

申请日：2014-12-15

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Naoto Yamade ,  Yoshitaka Yamamoto ,  Hideomi Suzawa ,  Masayuki Sakakura ,  Yuhei Sato ,  Yasumasa Yamane

IPC分类号： H01L29/66 ,  H01L21/02 ,  H01L21/383 ,  H01L21/465 ,  H01L21/441 ,  H01L21/425 ,  H01L29/786 ,  H01L21/477

CPC分类号： H01L29/66969 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/383 ,  H01L21/425 ,  H01L21/441 ,  H01L21/465 ,  H01L21/477 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

摘要： The semiconductor device is manufactured by the following method. A first oxide semiconductor film is formed over a first gate electrode and a first insulating film, oxygen is added to the first oxide semiconductor film, and then a second oxide semiconductor film is formed over the first oxide semiconductor film. Then, heat treatment is performed. Next, part of the first insulating film, part of the first oxide semiconductor film, and part of the second oxide semiconductor film are etched to form a first gate insulating film having a projection. Next, a pair of electrodes is formed over the second oxide semiconductor film, and a third oxide semiconductor film is formed over the second oxide semiconductor film and the pair of electrodes. Then, a second gate insulating film is formed over the third oxide semiconductor film, and a second gate electrode is formed over the second gate insulating film.

摘要翻译： 半导体器件通过以下方法制造。 在第一栅电极和第一绝缘膜上形成第一氧化物半导体膜，在第一氧化物半导体膜上添加氧，然后在第一氧化物半导体膜上形成第二氧化物半导体膜。 然后进行热处理。 接下来，蚀刻第一绝缘膜的一部分，第一氧化物半导体膜的一部分和第二氧化物半导体膜的一部分，以形成具有突起的第一栅极绝缘膜。 接着，在第二氧化物半导体膜上形成一对电极，在第二氧化物半导体膜和一对电极上形成第三氧化物半导体膜。 然后，在第三氧化物半导体膜上形成第二栅极绝缘膜，在第二栅极绝缘膜上形成第二栅电极。

公开(公告)号：US20140370656A1

公开(公告)日：2014-12-18

申请号：US14476797

申请日：2014-09-04

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki

IPC分类号： H01L21/4757 ,  H01L21/473

CPC分类号： H01L29/66969 ,  H01L21/02175 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/383 ,  H01L21/441 ,  H01L21/473 ,  H01L21/47576 ,  H01L21/477 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/78606 ,  H01L29/7869

摘要： A semiconductor device using an oxide semiconductor, with stable electric characteristics and high reliability. In a process for manufacturing a bottom-gate transistor including an oxide semiconductor film, dehydration or dehydrogenation is performed by heat treatment and oxygen doping treatment is performed. The transistor including the oxide semiconductor film subjected to the dehydration or dehydrogenation by the heat treatment and the oxygen doping treatment is a transistor having high reliability in which the amount of change in threshold voltage of the transistor by the bias-temperature stress test (BT test) can be reduced.

摘要翻译： 使用氧化物半导体的半导体器件，具有稳定的电特性和高可靠性。 在制造包括氧化物半导体膜的底栅晶体管的工艺中，通过热处理进行脱水或脱氢，并进行氧掺杂处理。 包括通过热处理和氧掺杂处理进行脱水或脱氢的氧化物半导体膜的晶体管是具有高可靠性的晶体管，其中通过偏置 - 温度应力测试（BT测试）晶体管的阈值电压的变化量 ）可以减少。