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63 条记录 (耗时 0.016 秒)

    Light emitting device
    51.
    发明授权
    Light emitting device 有权
    发光装置

    公开(公告)号：US08030664B2

    公开(公告)日：2011-10-04

    申请号：US12000360

    申请日：2007-12-12

    申请人： Won Ha Moon ,  Chang Hwan Choi ,  Dong Woohn Kim ,  Hyun Jun Kim

    发明人： Won Ha Moon ,  Chang Hwan Choi ,  Dong Woohn Kim ,  Hyun Jun Kim

    IPC分类号： H01L33/06

    CPC分类号： H01L33/0037 ,  H01L33/08 ,  H01L33/22 ,  H01L2933/0083 ,  Y10S977/762

    摘要： There is provided a light emitting device of a simpler structure, capable of ensuring a broad light emitting area and a high light emitting efficiency, while manufactured in a simplified and economically efficient process. The light emitting device including: a semiconductor layer; an active layer formed on the semiconductor layer, the active layer comprising at least one of a quantum well structure, a quantum dot and a quantum line; an insulating layer formed on the active layer; and a metal layer formed on the insulating layer.

    摘要翻译： 提供了一种结构简单的发光器件，其能够在简化且经济有效的工艺制造的同时确保宽的发光面积和高发光效率。 该发光器件包括：半导体层; 形成在所述半导体层上的有源层，所述有源层包括量子阱结构，量子点和量子线中的至少一个; 形成在所述有源层上的绝缘层; 以及形成在所述绝缘层上的金属层。

    OPTICAL DEVICE HAVING STRAINED BURIED CHANNEL
    52.
    发明申请
    OPTICAL DEVICE HAVING STRAINED BURIED CHANNEL 有权
    具有应变通道的光学器件

    公开(公告)号：US20090261383A1

    公开(公告)日：2009-10-22

    申请号：US12441381

    申请日：2007-08-17

    申请人： Bongki Mheen ,  Jeong-Woo Park ,  Hyun-Soo Kim ,  Gyungock Kim

    发明人： Bongki Mheen ,  Jeong-Woo Park ,  Hyun-Soo Kim ,  Gyungock Kim

    IPC分类号： H01L29/80

    CPC分类号： G02F1/025 ,  G02F1/2257 ,  H01L33/0037

    摘要： Provided is an optical device having a strained buried channel area. The optical device includes: a semiconductor substrate of a first conductive type; a gate insulating layer formed on the semiconductor substrate; a gate of a second conductive type opposite to the first conductive type, formed on the gate insulating layer; a high density dopant diffusion area formed in the semiconductor substrate under the gate and doped with a first conductive type dopant having a higher density than the semiconductor substrate; a strained buried channel area formed of a semiconductor material having a different lattice parameter from a material of which the semiconductor substrate is formed and extending between the gate insulating layer and the semiconductor substrate to contact the high density dopant diffusion area; and a semiconductor cap layer formed between the gate insulating layer and the strained buried channel area.

    摘要翻译： 提供了具有应变埋入通道区域的光学装置。 该光学器件包括：第一导电类型的半导体衬底; 形成在半导体衬底上的栅极绝缘层; 形成在栅极绝缘层上的与第一导电类型相反的第二导电类型的栅极; 形成在所述半导体衬底下的高密度掺杂剂扩散区，并且掺杂有比所述半导体衬底更高密度的第一导电型掺杂剂; 由半导体材料形成的应变掩埋沟道区域，具有与形成半导体衬底的材料不同的晶格参数，并且在栅极绝缘层和半导体衬底之间延伸以接触高密度掺杂剂扩散区域; 以及形成在栅绝缘层和应变埋入沟道区之间的半导体盖层。

    High speed electron tunneling devices
    53.
    发明申请
    High speed electron tunneling devices 有权
    高速电子隧道装置

    公开(公告)号：US20040232505A1

    公开(公告)日：2004-11-25

    申请号：US10877874

    申请日：2004-06-26

    发明人： Garret Moddel ,  Blake J. Eliasson

    IPC分类号： H01L021/00 ,  H01L029/82

    CPC分类号： H01L27/1446 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y20/00 ,  H01L29/7311 ,  H01L29/7606 ,  H01L29/82 ,  H01L31/08 ,  H01L31/101 ,  H01L33/0004 ,  H01L33/0037 ,  H01L39/22 ,  H01L45/00

    摘要： A detector includes a voltage source for providing a bias voltage and first and second non-insulating layers, which are spaced apart such that the bias voltage can be applied therebetween and form an antenna for receiving electromagnetic radiation and directing it to a specific location within the detector. The detector also includes an arrangement serving as a transport of electrons, including tunneling, between and to the first and second non-insulating layers when electromagnetic radiation is received at the antenna. The arrangement includes a first insulating layer and a second layer configured such that using only the first insulating in the arrangement would result in a given value of nonlinearity in the transport of electrons while the inclusion of the second layer increases the nonlinearity above the given value. A portion of the electromagnetic radiation incident on the antenna is converted to an electrical signal at an output.

    摘要翻译： 检测器包括用于提供偏置电压的电压源和第一和第二非绝缘层，其间隔开，使得偏置电压可以在其间施加，并形成用于接收电磁辐射的天线，并将其引导到位于 探测器。 当在天线处接收到电磁辐射时，检测器还包括用作电子传输的装置，包括隧穿，并在第一和第二非绝缘层之间和之间。 该布置包括第一绝缘层和第二层，其被配置为使得仅使用布置中的第一绝缘体将导致电子传输中的非线性的给定值，而包含第二层的非线性增加了高于给定值的非线性。 入射在天线上的电磁辐射的一部分在输出端被转换成电信号。

    High speed electron tunneling device and applications
    54.
    发明授权
    High speed electron tunneling device and applications 有权
    高速电子隧道装置及其应用

    公开(公告)号：US06756649B2

    公开(公告)日：2004-06-29

    申请号：US10347534

    申请日：2003-01-20

    申请人： Garret Moddel ,  Blake J. Eliasson

    发明人： Garret Moddel ,  Blake J. Eliasson

    IPC分类号： H01L2982

    CPC分类号： H01L27/1446 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y20/00 ,  H01L29/7311 ,  H01L29/7606 ,  H01L29/82 ,  H01L31/08 ,  H01L31/101 ,  H01L33/0004 ,  H01L33/0037 ,  H01L39/22 ,  H01L45/00

    摘要： A modulator includes a voltage source, a first arrangement including first and second non-insulating layers configured such that a modulation voltage from the voltage source can be applied there across, and a second arrangement between the first and second non-insulating layers. The second arrangement includes a first amorphous layer configured such that a transport of electrons between the first and second non-insulating layers includes tunneling. The first arrangement further includes an antenna structure for absorbing part of an input radiation, while a remainder of the input radiation is reflected. The second arrangement cooperates with the first arrangement such that the antenna exhibits a first absorptivity, when a first modulation voltage is applied to the first arrangement, and exhibits a distinct, second absorptivity, when a second modulation voltage is applied, thereby causing the antenna to reflect a different amount of input radiation to an output as modulated radiation.

    摘要翻译： 调制器包括电压源，第一装置包括第一和第二非绝缘层，第一和第二非绝缘层被配置成使得来自电压源的调制电压可以在其上施加，并且第一和第二非绝缘层之间的第二布置。 第二布置包括第一非晶层，其被配置为使得在第一和第二非绝缘层之间的电子传输包括隧穿。 第一布置还包括用于吸收输入辐射的一部分的天线结构，而反射输入辐射的其余部分。 第二布置与第一布置配合，使得当施加第一调制电压时，天线呈现第一吸收率，并且当施加第二调制电压时，其呈现明显的第二吸收率，从而使天线 将不同数量的输入辐射反射为输出作为调制辐射。

    Light-emitting device of gallium nitride compound semiconductor
    55.
    再颁专利
    Light-emitting device of gallium nitride compound semiconductor 失效
    氮化镓化合物半导体发光元件

    公开(公告)号：USRE36747E

    公开(公告)日：2000-06-27

    申请号：US844386

    申请日：1997-04-18

    申请人： Katsuhide Manabe ,  Masahiro Kotaki ,  Makoto Tamaki ,  Masafumi Hashimoto

    发明人： Katsuhide Manabe ,  Masahiro Kotaki ,  Makoto Tamaki ,  Masafumi Hashimoto

    IPC分类号： H01L33/00 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L27/14 ,  H01L29/00 ,  H01L31/00 ,  H01L49/00

    CPC分类号： H01L33/40 ,  H01L33/0037 ,  H01L33/38 ,  H01L33/32 ,  H01L33/382

    摘要： A light-emitting diode of GaN compound semiconductor emits a blue light from a plane rather than dots for improved luminous intensity. This diode includes a first electrode associated with a high-carrier density n.sup.+ layer and a second electrode associated with a high-impurity density .[.i.sub.H -layer.]. .Iadd.H-layer.Iaddend.. These electrodes are made up of a first Ni layer (110 .ANG. thick), a second Ni layer (1000 .ANG. thick), an Al layer (1500 .ANG. thick), a Ti layer (1000 .ANG. thick), and a third Ni layer (2500 .ANG. thick). The Ni layers of dual structure permit a buffer layer to be formed between them. This buffer layer prevents the Ni layer from peeling. The direct contact of the Ni layer with GaN lowers a drive voltage for light emission and increases luminous intensity.

    摘要翻译： GaN化合物半导体的发光二极管从平面发出蓝色光而不是点以改善发光强度。 该二极管包括与高载流子密度n +层相关联的第一电极和与高杂质密度[iH层] H层相关联的第二电极。 这些电极由第一Ni层（110厚），第二Ni层（1000厚），Al层（1500厚），Ti层（1000厚）和第三Ni层（ 2500 ANGSTROM厚）。 双层结构的Ni层允许在它们之间形成缓冲层。 该缓冲层防止Ni层脱落。 Ni层与GaN的直接接触降低了用于发光的驱动电压并增加了发光强度。