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    Luminescent diode
    51.
    发明授权
    Luminescent diode 失效
    发光二极管

    公开(公告)号：US4062035A

    公开(公告)日：1977-12-06

    申请号：US763548

    申请日：1977-01-28

    Applicant: Guenter Winstel

    Inventor： Guenter Winstel

    IPC: H01L33/00 ,  H01L33/42 ,  H01L33/44

    CPC classification number: H01L33/44 ,  H01L33/0037 ,  H01L33/42

    Abstract: A semiconductor luminescent device is disclosed of the MIS type which has a semiconductor body, a semiconductor monocrystalline insulating layer on one surface of the body and an electrode on the outer major surface of the insulating layer, which electrode is light transmissive. The crystal structure of the insulating layer is substantially the same as the crystal structure of the semiconductor body and has a spacing of energy bands which is greater than the light quanta which are emitted during a radiative recombination of charge carriers in the semiconductor body. The interval of the energy bands of the insulating layer is at least 2 kT greater than the interval of the energy bands of the semiconductor body. It is preferable that the crystal structure of the insulating layer have a deviation of its lattice interval of less than 1% from that of the semiconductor body.

    Abstract translation: 公开了一种半导体发光器件，其具有半导体本体，在本体的一个表面上的半导体单晶绝缘层和绝缘层的外主表面上的电极，该电极是透光的。 绝缘层的晶体结构与半导体本体的晶体结构基本相同，并且具有大于在半导体本体中的电荷载流子的辐射复合期间发射的光量子点的能带间隔。 绝缘层的能带的间隔比半导体本体的能带的间隔大至少2kT。 优选绝缘层的晶体结构与半导体本体的晶格间隔的偏差小于1％。

    Light emitting device
    57.
    发明授权
    Light emitting device 有权
    发光装置

    公开(公告)号：US08030664B2

    公开(公告)日：2011-10-04

    申请号：US12000360

    申请日：2007-12-12

    Applicant: Won Ha Moon ,  Chang Hwan Choi ,  Dong Woohn Kim ,  Hyun Jun Kim

    Inventor： Won Ha Moon ,  Chang Hwan Choi ,  Dong Woohn Kim ,  Hyun Jun Kim

    IPC: H01L33/06

    CPC classification number: H01L33/0037 ,  H01L33/08 ,  H01L33/22 ,  H01L2933/0083 ,  Y10S977/762

    Abstract: There is provided a light emitting device of a simpler structure, capable of ensuring a broad light emitting area and a high light emitting efficiency, while manufactured in a simplified and economically efficient process. The light emitting device including: a semiconductor layer; an active layer formed on the semiconductor layer, the active layer comprising at least one of a quantum well structure, a quantum dot and a quantum line; an insulating layer formed on the active layer; and a metal layer formed on the insulating layer.

    Abstract translation: 提供了一种结构简单的发光器件，其能够在简化且经济有效的工艺制造的同时确保宽的发光面积和高发光效率。 该发光器件包括：半导体层; 形成在所述半导体层上的有源层，所述有源层包括量子阱结构，量子点和量子线中的至少一个; 形成在所述有源层上的绝缘层; 以及形成在所述绝缘层上的金属层。

    OPTICAL DEVICE HAVING STRAINED BURIED CHANNEL
    58.
    发明申请
    OPTICAL DEVICE HAVING STRAINED BURIED CHANNEL 有权
    具有应变通道的光学器件

    公开(公告)号：US20090261383A1

    公开(公告)日：2009-10-22

    申请号：US12441381

    申请日：2007-08-17

    Applicant: Bongki Mheen ,  Jeong-Woo Park ,  Hyun-Soo Kim ,  Gyungock Kim

    Inventor： Bongki Mheen ,  Jeong-Woo Park ,  Hyun-Soo Kim ,  Gyungock Kim

    IPC: H01L29/80

    CPC classification number: G02F1/025 ,  G02F1/2257 ,  H01L33/0037

    Abstract: Provided is an optical device having a strained buried channel area. The optical device includes: a semiconductor substrate of a first conductive type; a gate insulating layer formed on the semiconductor substrate; a gate of a second conductive type opposite to the first conductive type, formed on the gate insulating layer; a high density dopant diffusion area formed in the semiconductor substrate under the gate and doped with a first conductive type dopant having a higher density than the semiconductor substrate; a strained buried channel area formed of a semiconductor material having a different lattice parameter from a material of which the semiconductor substrate is formed and extending between the gate insulating layer and the semiconductor substrate to contact the high density dopant diffusion area; and a semiconductor cap layer formed between the gate insulating layer and the strained buried channel area.

    Abstract translation: 提供了具有应变埋入通道区域的光学装置。 该光学器件包括：第一导电类型的半导体衬底; 形成在半导体衬底上的栅极绝缘层; 形成在栅极绝缘层上的与第一导电类型相反的第二导电类型的栅极; 形成在所述半导体衬底下的高密度掺杂剂扩散区，并且掺杂有比所述半导体衬底更高密度的第一导电型掺杂剂; 由半导体材料形成的应变掩埋沟道区域，具有与形成半导体衬底的材料不同的晶格参数，并且在栅极绝缘层和半导体衬底之间延伸以接触高密度掺杂剂扩散区域; 以及形成在栅绝缘层和应变埋入沟道区之间的半导体盖层。

    High speed electron tunneling devices
    59.
    发明申请
    High speed electron tunneling devices 有权
    高速电子隧道装置

    公开(公告)号：US20040232505A1

    公开(公告)日：2004-11-25

    申请号：US10877874

    申请日：2004-06-26

    Inventor： Garret Moddel ,  Blake J. Eliasson

    IPC: H01L021/00 ,  H01L029/82

    CPC classification number: H01L27/1446 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y20/00 ,  H01L29/7311 ,  H01L29/7606 ,  H01L29/82 ,  H01L31/08 ,  H01L31/101 ,  H01L33/0004 ,  H01L33/0037 ,  H01L39/22 ,  H01L45/00

    Abstract: A detector includes a voltage source for providing a bias voltage and first and second non-insulating layers, which are spaced apart such that the bias voltage can be applied therebetween and form an antenna for receiving electromagnetic radiation and directing it to a specific location within the detector. The detector also includes an arrangement serving as a transport of electrons, including tunneling, between and to the first and second non-insulating layers when electromagnetic radiation is received at the antenna. The arrangement includes a first insulating layer and a second layer configured such that using only the first insulating in the arrangement would result in a given value of nonlinearity in the transport of electrons while the inclusion of the second layer increases the nonlinearity above the given value. A portion of the electromagnetic radiation incident on the antenna is converted to an electrical signal at an output.

    Abstract translation: 检测器包括用于提供偏置电压的电压源和第一和第二非绝缘层，其间隔开，使得偏置电压可以在其间施加，并形成用于接收电磁辐射的天线，并将其引导到位于 探测器。 当在天线处接收到电磁辐射时，检测器还包括用作电子传输的装置，包括隧穿，并在第一和第二非绝缘层之间和之间。 该布置包括第一绝缘层和第二层，其被配置为使得仅使用布置中的第一绝缘体将导致电子传输中的非线性的给定值，而包含第二层的非线性增加了高于给定值的非线性。 入射在天线上的电磁辐射的一部分在输出端被转换成电信号。

    High speed electron tunneling device and applications
    60.
    发明授权
    High speed electron tunneling device and applications 有权
    高速电子隧道装置及其应用

    公开(公告)号：US06756649B2

    公开(公告)日：2004-06-29

    申请号：US10347534

    申请日：2003-01-20

    Applicant: Garret Moddel ,  Blake J. Eliasson

    Inventor： Garret Moddel ,  Blake J. Eliasson

    IPC: H01L2982

    CPC classification number: H01L27/1446 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y20/00 ,  H01L29/7311 ,  H01L29/7606 ,  H01L29/82 ,  H01L31/08 ,  H01L31/101 ,  H01L33/0004 ,  H01L33/0037 ,  H01L39/22 ,  H01L45/00

    Abstract: A modulator includes a voltage source, a first arrangement including first and second non-insulating layers configured such that a modulation voltage from the voltage source can be applied there across, and a second arrangement between the first and second non-insulating layers. The second arrangement includes a first amorphous layer configured such that a transport of electrons between the first and second non-insulating layers includes tunneling. The first arrangement further includes an antenna structure for absorbing part of an input radiation, while a remainder of the input radiation is reflected. The second arrangement cooperates with the first arrangement such that the antenna exhibits a first absorptivity, when a first modulation voltage is applied to the first arrangement, and exhibits a distinct, second absorptivity, when a second modulation voltage is applied, thereby causing the antenna to reflect a different amount of input radiation to an output as modulated radiation.

    Abstract translation: 调制器包括电压源，第一装置包括第一和第二非绝缘层，第一和第二非绝缘层被配置成使得来自电压源的调制电压可以在其上施加，并且第一和第二非绝缘层之间的第二布置。 第二布置包括第一非晶层，其被配置为使得在第一和第二非绝缘层之间的电子传输包括隧穿。 第一布置还包括用于吸收输入辐射的一部分的天线结构，而反射输入辐射的其余部分。 第二布置与第一布置配合，使得当施加第一调制电压时，天线呈现第一吸收率，并且当施加第二调制电压时，其呈现明显的第二吸收率，从而使天线 将不同数量的输入辐射反射为输出作为调制辐射。

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