公开(公告)号：US20140179026A1

公开(公告)日：2014-06-26

申请号：US14055846

申请日：2013-10-16

Applicant: Institute of Physics, Chinese Academy of Sciences ,  Tsinghua University

Inventor： QI-KUN XUE ,  KE HE ,  XU-CUN MA ,  XI CHEN ,  LI-LI WANG ,  YA-YU WANG ,  LI LV ,  CUI-ZU CHANG ,  XIAO FENG

IPC: H01L43/14 ,  H01L43/06

CPC classification number: H01L43/14 ,  H01L43/065

Abstract: A method for generating quantum anomalous Hall effect is provided. A topological insulator quantum well film in 3QL to 5QL is formed on an insulating substrate. The topological insulator quantum well film is doped with a first element and a second element to form the magnetically doped topological insulator quantum well film. The doping of the first element and the second element respectively introduce hole type charge carriers and electron type charge carriers in the magnetically doped topological insulator quantum well film, to decrease the carrier density of the magnetically doped topological insulator quantum well film to be smaller than or equal to 1×1013cm−2. One of the first element and the second element magnetically dopes the topological insulator quantum well film. An electric field is applied to the magnetically doped topological insulator quantum well film to decrease the carrier density.

Abstract translation: 提供了一种产生量子异常霍尔效应的方法。 在绝缘基板上形成3QL至5QL中的拓扑绝缘体量子阱膜。 拓扑绝缘体量子阱膜掺杂有第一元素和第二元素以形成磁掺杂拓扑绝缘子量子阱膜。 第一元件和第二元件的掺杂在磁性掺杂拓扑绝缘子量子阱膜中分别引入孔型电荷载流子和电子型电荷载流子，以将磁性掺杂拓扑绝缘子量子阱膜的载流子密度降低到或小于 等于1×1013cm-2。 第一元素和第二元素之一磁性掺杂拓扑绝缘体量子阱膜。 将电场施加到磁性掺杂拓扑绝缘体量子阱膜以降低载流子密度。

公开(公告)号：US08629539B2

公开(公告)日：2014-01-14

申请号：US13350970

申请日：2012-01-16

Applicant: Shaun D. Milano ,  Michael C. Doogue ,  William P. Taylor

Inventor： Shaun D. Milano ,  Michael C. Doogue ,  William P. Taylor

IPC: H01L23/495 ,  H01L23/14

CPC classification number: H01L43/04 ,  G01R33/0029 ,  G01R33/0052 ,  G01R33/0076 ,  G01R33/07 ,  G01R33/09 ,  H01L23/3107 ,  H01L23/3142 ,  H01L23/49503 ,  H01L23/49506 ,  H01L23/49541 ,  H01L23/49575 ,  H01L24/17 ,  H01L43/02 ,  H01L43/06 ,  H01L43/065 ,  H01L43/08 ,  H01L43/12 ,  H01L43/14 ,  H01L2224/16 ,  H01L2224/16245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/4826 ,  H01L2224/49171 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2924/15311 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Methods and apparatus to provide an integrated circuit package having a conductive leadframe, a non-conductive die paddle mechanically coupled to the leadframe, and a die disposed on the die paddle and electrically connected to the leadframe. With this arrangement, eddy currents are reduced near the magnetic field transducer to reduce interference with magnetic fields.

Abstract translation: 提供集成电路封装的方法和装置，其具有导电引线框架，机械耦合到引线框架的非导电管芯焊盘以及设置在管芯焊盘上并电连接到引线框架的管芯。 通过这种布置，磁场传感器附近的涡流减小，以减少对磁场的干扰。

公开(公告)号：US08564083B2

公开(公告)日：2013-10-22

申请号：US13421026

申请日：2012-03-15

Applicant: Christian Schott ,  Peter Hofmann

Inventor： Christian Schott ,  Peter Hofmann

IPC: H01L27/22

CPC classification number: H01L43/065 ,  G01R33/077 ,  H01L43/14

Abstract: The invention relates to a vertical Hall sensor integrated in a semiconductor chip and a method for the production thereof. The vertical Hall sensor has an electrically conductive well of a first conductivity type, which is embedded in an electrically conductive region of a second conductivity type. The electrical contacts are arranged along a straight line on a planar surface of the electrically conductive well. The electrically conductive well is generated by means of high-energy ion implantation and subsequent heating, so that it has a doping profile which either has a maximum which is located at a depth T1 from the planar surface of the electrically conductive well, or is essentially constant up to a depth T2.

Abstract translation: 本发明涉及集成在半导体芯片中的垂直霍尔传感器及其制造方法。 垂直霍尔传感器具有第一导电类型的导电孔，其被嵌入第二导电类型的导电区域中。 电触头沿着导电孔的平坦表面上的直线布置。 通过高能离子注入和随后的加热产生导电孔，使得其具有掺杂分布，其具有位于距导电孔的平坦表面的深度T1处的最大值，或基本上 恒定到深度T2。

公开(公告)号：US08466526B2

公开(公告)日：2013-06-18

申请号：US13135299

申请日：2011-06-30

Applicant: Takaaki Hioka ,  Toshihiko Omi

Inventor： Takaaki Hioka ,  Toshihiko Omi

IPC: H01L29/82 ,  H01L43/00 ,  H01L23/58

CPC classification number: H01L43/065 ,  G01R33/07

Abstract: A Hall sensor has a P-type semiconductor substrate and a Hall sensing portion having a square shape and an N-type conductivity disposed on a surface of the semiconductor substrate. The Hall sensor includes Hall voltage output terminals having the same shape with each other, and control current input terminals having the same shape with each other. The Hall voltage output terminals are disposed at respective ones of four vertices of the Hall sensing portion. The control current input terminals include pairs of control current input terminals disposed at respective ones of the four vertices of the Hall sensing portion and arranged on both sides of respective ones of the Hall voltage output terminals in spaced apart relation from the Hall voltage output terminals so as to prevent electrical connection between the control current input terminals and the Hall voltage output terminals.

Abstract translation: 霍尔传感器具有P型半导体基板和设置在半导体基板的表面上的具有正方形和N型导电体的霍尔感测部分。 霍尔传感器包括具有相同形状的霍尔电压输出端子和彼此具有相同形状的控制电流输入端子。 霍尔电压输出端子设置在霍尔感测部分的四个顶点中的相应的一个。 控制电流输入端子包括设置在霍尔感测部分的四个顶点中的各个顶点处的一对控制电流输入端子，并且布置在与霍尔电压输出端子间隔开的相应霍尔电压输出端子的两侧，因此 以防止控制电流输入端子与霍尔电压输出端子之间的电气连接。

公开(公告)号：US20130127453A1

公开(公告)日：2013-05-23

申请号：US13298917

申请日：2011-11-17

Applicant: Udo Ausserlechner

Inventor： Udo Ausserlechner

IPC: G01R33/06

CPC classification number: G01R33/072 ,  G01L1/12 ,  G01R33/07 ,  G01R33/077 ,  H01L43/065

Abstract: An electronic device is disclosed as a part of a magnetic field sensor or a mechanical stress sensor. The electronic device includes a Hall effect region, a first contact (temporarily functioning as a first supply contact), a second contact (second supply contact), and a third contact (temporarily functioning as a first sense contact) that are arranged in or on a surface of the Hall effect region. The first contact and the third contact are arranged in a substantially symmetrical manner to each other with respect to the second contact. An electrical current distribution within the Hall effect region is influenced by a physical quantity (e.g. magnetic field strength or mechanical stress) to be measured. A sense signal tapped at the third contact is a function of the current distribution, the sense signal thus being indicative of the physical quantity. A corresponding sensing method using the electronic device is also disclosed.

Abstract translation: 电子装置被公开为磁场传感器或机械应力传感器的一部分。 电子设备包括霍尔效应区域，布置在其中或之上的第一触点（暂时用作第一电源触点），第二触点（第二电源触点）和第三触点（暂时用作第一感测触点） 霍尔效应区域的一个表面。 第一触点和第三触点以相对于第二触点彼此基本对称的方式布置。 霍尔效应区域内的电流分布受待测量的物理量（例如磁场强度或机械应力）的影响。 在第三触点处抽头的感测信号是电流分布的函数，因此感测信号表示物理量。 还公开了使用该电子设备的相应的感测方法。

公开(公告)号：US20130099782A1

公开(公告)日：2013-04-25

申请号：US13806638

申请日：2011-07-01

Applicant: Pavel Kejik ,  Serge Reymond

Inventor： Pavel Kejik ,  Serge Reymond

IPC: G01R33/07

CPC classification number: G01R33/07 ,  G01R33/0005 ,  G01R33/075 ,  H01L43/065

Abstract: Integrated circuit Hall sensor system comprising a plurality of elementary blocks (EB), each elementary block including a Hall cell (4), a differential pair (8) of an input stage of a Differential Difference Amplifier (DDA), and terminals (12a, 12b), wherein the terminals (12a, 12b) are placed laterally on opposing outer sides of each elementary block parallel to a Y axis and the plurality of elementary blocks are arranged in a juxtaposed manner to form at least one row (6a, 6b) extending along an X axis orthogonal to the Y axis and interconnected by the terminals.

Abstract translation: 包括多个基本块（EB）的集成电路霍尔传感器系统，每个基本块包括霍尔单元（4），差分差分放大器（DDA）的输入级的差分对（8）和端子（12a， 12b），其中端子（12a，12b）横向地放置在平行于Y轴的每个基本块的相对的外侧上，并且多个基本块以并置的方式布置以形成至少一行（6a，6b） 沿着与Y轴正交的X轴延伸并由端子互连。

公开(公告)号：US08222679B2

公开(公告)日：2012-07-17

申请号：US12593493

申请日：2008-03-26

Applicant: Thomas Uhlig ,  Felix Fuernhammer ,  Christoph Ellmers

Inventor： Thomas Uhlig ,  Felix Fuernhammer ,  Christoph Ellmers

IPC: H01L29/66

CPC classification number: H01L27/22 ,  G01R33/07 ,  H01L43/065

Abstract: A semiconductor device with an integrated circuit on a semiconductor substrate comprises a Hall effect sensor in a first active region and a lateral high voltage MOS transistor in a second active region. The semiconductor device of the present invention is characterized in that the structure of the integrated Hall effect sensor is strongly related with the structure of a high-voltage DMOS transistor. The integrated Hall effect sensor is in some features similar to a per se known high-voltage DMOS transistor having a double RESURF structure. The control contacts of the Hall effect sensor correspond to the source and drain contacts of the high-voltage DMOS transistor. The semiconductor device of the present invention allows a simplification of the process integration.

Abstract translation: 在半导体衬底上具有集成电路的半导体器件包括第一有源区中的霍尔效应传感器和第二有源区中的横向高压MOS晶体管。 本发明的半导体器件的特征在于，集成霍尔效应传感器的结构与高电压DMOS晶体管的结构密切相关。 集成的霍尔效应传感器具有与本身已知的具有双重RESURF结构的已知高压DMOS晶体管相似的特征。 霍尔效应传感器的控制触点对应于高压DMOS晶体管的源极和漏极触点。 本发明的半导体器件允许简化工艺集成。

公开(公告)号：US08154282B2

公开(公告)日：2012-04-10

申请号：US12281841

申请日：2007-03-07

Applicant: Patrick Warin ,  Matthieu Jamet

Inventor： Patrick Warin ,  Matthieu Jamet

IPC: G01R33/12

CPC classification number: G01R33/07 ,  G11C11/18 ,  H01L43/065

Abstract: The invention concerns a magnetic field-sensitive component, a magnetic field sensing device and a memory structure each incorporating said component, and a method for detecting a magnetic field using said component. A component according to the invention comprises: at least one diluted magnetic semiconductor, first means for generating an electric current in said semiconductor along one predetermined direction, and second means for producing a signal representing a Hall voltage transverse to said direction, and it is so designed that the semiconductor is selected from the group consisting of II/VI and IV/IV type semiconductors and comprises a zone sensitive to said field which forms all or part of a magnetic quantum well, wherein are confined current carriers incorporated by doping in the semiconductor and inducing in said well ferromagnetic exchange interactions.

Abstract translation: 本发明涉及一种磁场敏感元件，磁场感测装置和各自包含所述部件的存储器结构，以及一种使用所述部件检测磁场的方法。 根据本发明的部件包括：至少一个稀释磁性半导体，用于沿着一个预定方向在所述半导体中产生电流的第一装置，以及用于产生表示横向于所述方向的霍尔电压的信号的第二装置， 设计为半导体选自II / VI和IV / IV型半导体，并且包括对所述场敏感的区域，其形成全部或部分磁量子阱，其中是通过掺杂在半导体中并入的限定电流载流子 并诱导所述阱铁磁交换相互作用。

公开(公告)号：US08154280B2

公开(公告)日：2012-04-10

申请号：US12516538

申请日：2007-11-29

Applicant: Ichiro Shibasaki ,  Hirotaka Geka ,  Atsushi Okamoto

Inventor： Ichiro Shibasaki ,  Hirotaka Geka ,  Atsushi Okamoto

IPC: G01R33/02 ,  H01L31/107

CPC classification number: H01L29/201 ,  G01R33/07 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/0262 ,  H01L43/065 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H01L43/14 ,  Y10T428/12681

Abstract: Relating to a thin film lamination and a thin film magnetic sensor using the thin film lamination and a method for manufacturing the thin film lamination that realizes a thin film conducting layer having high electron mobility and sheet resistance as an InAsSb operating layer. A thin film lamination is provided which is characterized by having an AlxIn1−xSb mixed crystal layer formed on a substrate, and an InAsxSb1−x (0

Abstract translation: 关于使用该薄膜层叠体的薄膜层叠体和薄膜磁传感器以及实现作为InAsSb操作层的具有高电子迁移率和薄层电阻的薄膜导电层的薄膜层压体的制造方法。 提供了一种薄膜层压体，其特征在于在基板上形成Al x In 1-x Sb混合晶体层，以及直接形成在Al x In 1-x Sb层上的InAs x Sb 1-x（0

公开(公告)号：US20110127583A1

公开(公告)日：2011-06-02

申请号：US12593493

申请日：2008-03-26

Applicant: Thomas Uhlig ,  Felix Fuernhammer ,  Christoph Ellmers

Inventor： Thomas Uhlig ,  Felix Fuernhammer ,  Christoph Ellmers

IPC: H01L27/22

CPC classification number: H01L27/22 ,  G01R33/07 ,  H01L43/065

Abstract: A semiconductor device with an integrated circuit on a semiconductor substrate comprises a Hall effect sensor in a first active region and a lateral high voltage MOS transistor in a second active region. The semiconductor device of the present invention is characterized in that the structure of the integrated Hall effect sensor is strongly related with the structure of a high-voltage DMOS transistor. The integrated Hall effect sensor is in some features similar to a per se known high-voltage DMOS transistor having a double RESURF structure. The control contacts of the Hall effect sensor correspond to the source and drain contacts of the high-voltage DMOS transistor. The semiconductor device of the present invention allows a simplification of the process integration.

Abstract translation: 在半导体衬底上具有集成电路的半导体器件包括第一有源区中的霍尔效应传感器和第二有源区中的横向高压MOS晶体管。 本发明的半导体器件的特征在于，集成霍尔效应传感器的结构与高电压DMOS晶体管的结构密切相关。 集成的霍尔效应传感器具有与本身已知的具有双重RESURF结构的已知高压DMOS晶体管相似的特征。 霍尔效应传感器的控制触点对应于高压DMOS晶体管的源极和漏极触点。 本发明的半导体器件允许简化工艺集成。