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    Bulk acoustic wave resonator and manufacturing method thereof, filter using the same, semiconductor integrated circuit device using the same, and high frequency module using the same
    51.
    发明授权
    Bulk acoustic wave resonator and manufacturing method thereof, filter using the same, semiconductor integrated circuit device using the same, and high frequency module using the same 失效
    体声波谐振器及其制造方法，使用其的滤波器，使用其的半导体集成电路器件，以及使用其的高频模块

    公开(公告)号：US07221242B2

    公开(公告)日：2007-05-22

    申请号：US11067374

    申请日：2005-02-28

    申请人： Kengo Asai ,  Hisanori Matsumoto ,  Atsushi Isobe ,  Mitsutaka Hikita

    发明人： Kengo Asai ,  Hisanori Matsumoto ,  Atsushi Isobe ,  Mitsutaka Hikita

    IPC分类号： H03H9/00 ,  H01L41/00

    CPC分类号： H03H3/02 ,  H03H9/0542 ,  H03H9/0571 ,  H03H9/174 ,  H03H9/564 ,  H03H9/706

    摘要： A bulk acoustic wave resonator in which the problem of the technology for forming the diaphragm structure is resolved, which is more compact and improved the frequency accuracy, and the manufacturing method thereof, a filter using the same, a semiconductor integrated circuit device using the same, and a high frequency module using the same are provided. The bulk acoustic wave resonator according to the present invention comprises a substrate having a first surface and a second surface opposite to the first surface, and a staked resonator including a first electrode film in contact with the first surface, a piezoelectric film overlaying the first electrode film and a second electrode film overlaying the piezoelectric film. The substrate is provided with an air gap including a first aperture opening at the first surface and a second aperture opening at the second surface at the position corresponding to the staked resonator, respectively and having air gap generally vertical shape to the first surface, and another air gap having a tapered shape in the vicinity of the first surface.

    摘要翻译： 解决了用于形成隔膜结构的技术的问题的体声波谐振器，其更紧凑并且提高了频率精度，其制造方法，使用该隔膜结构的滤波器，使用该隔膜结构的半导体集成电路器件 ，并且提供使用该模块的高频模块。 根据本发明的体声波谐振器包括具有与第一表面相对的第一表面和第二表面的基板，以及包括与第一表面接触的第一电极膜的支架谐振器，覆盖第一电极的压电膜 膜和覆盖压电膜的第二电极膜。 衬底设置有气隙，该空气间隙包括在第一表面处的第一孔径开口和位于对应于桩状共振器的位置处的第二表面处的第二孔口开口，并且具有大致垂直于第一表面的气隙，另一个 气隙在第一表面附近具有锥形形状。

    Monolithic duplexer and fabrication method thereof
    52.
    发明申请
    Monolithic duplexer and fabrication method thereof 有权
    单片双工器及其制造方法

    公开(公告)号：US20070024391A1

    公开(公告)日：2007-02-01

    申请号：US11392624

    申请日：2006-03-30

    申请人： Sang-chul Sul ,  Duck-hwan Kim ,  Chul-soo Kim ,  In-sang Song ,  Moon-chul Lee ,  Kyu-dong Jung ,  Jea-shik Shin

    发明人： Sang-chul Sul ,  Duck-hwan Kim ,  Chul-soo Kim ,  In-sang Song ,  Moon-chul Lee ,  Kyu-dong Jung ,  Jea-shik Shin

    IPC分类号： H03H7/46

    CPC分类号： H03H3/02 ,  H03H9/0571 ,  H03H9/706

    摘要： A monolithic duplexer and a fabrication method thereof. The monolithic duplexer includes a device wafer, a plurality of elements distanced from each other on a top portion of a device wafer, first sealing parts formed on the top portion of the device wafer, and a plurality of first ground planes formed between the plurality of elements. A cap wafer is also provided having an etched area for packaging the device wafer, a plurality of protrusion parts, a plurality of ground posts, and cavities. Second sealing parts are formed on a bottom portion of the protrusion parts, and a plurality of second ground planes cover the plurality of ground posts. Via holes vertically penetrate the cap wafer to connect to the plurality of the second ground planes, and ground terminals are formed on top portions of the via holes. The first sealing parts and the first ground planes are attached to the second sealing parts and the second ground planes, respectively.

    摘要翻译： 一种单片双工器及其制造方法。 单片双工器包括器件晶片，在器件晶片的顶部彼此远离的多个元件，形成在器件晶片的顶部上的第一密封部分和形成在器件晶片的顶部之间的多个第一接地平面 元素。 还提供了盖晶片，其具有用于封装器件晶片，多个突出部分，多个接地柱和空腔的蚀刻区域。 第二密封部分形成在突出部分的底部上，并且多个第二接地平面覆盖多个接地柱。 通孔垂直穿过盖晶片以连接到多个第二接地平面，并且接地端子形成在通孔的顶部上。 第一密封部分和第一接地平面分别附接到第二密封部分和第二接地平面。

    Packaging methodology for duplexers using FBARs
    55.
    发明授权
    Packaging methodology for duplexers using FBARs 失效
    使用FBAR的双工器的封装方法

    公开(公告)号：US06838956B2

    公开(公告)日：2005-01-04

    申请号：US10243144

    申请日：2002-09-13

    申请人： Paul Bradley

    发明人： Paul Bradley

    IPC分类号： H04B1/38 ,  H03H9/10 ,  H03H9/58 ,  H03H9/70 ,  H03H9/54

    CPC分类号： H03H9/706 ,  H03H9/0571

    摘要： A filter assembly includes a ceramic substrate. A die including a film bulk acoustic resonator receive-band filter, positioned on the ceramic substrate, having an input and an output, includes a plurality of film bulk acoustic resonators. The filter assembly includes a first and a second loop of current. The first loop includes a first wire bond connected to the input of the die, and a second wire bond connected to a first one of the plurality of film bulk acoustic resonators. The second loop includes a third wire bond connected to the output of the die, and a fourth wire bond connected to a second one of the plurality of film bulk acoustic resonators, wherein the first loop induces parasitic current in the second loop. The first and the second wire bonds are positioned proximate to one another to minimize the area of the first loop, and the third and the fourth wire bonds are positioned proximate to one another to minimize the area of the second loop.

    Duplexer and manufacturing method thereof
    56.
    发明申请
    Duplexer and manufacturing method thereof 有权
    双工器及其制造方法

    公开(公告)号：US20040196116A1

    公开(公告)日：2004-10-07

    申请号：US10486719

    申请日：2004-02-13

    发明人： Eiju Komuro ,  Katsuhiko Gunji

    IPC分类号： H03H009/70

    CPC分类号： H03H9/706 ,  H03H3/02 ,  H03H9/0571 ,  H03H9/132 ,  H03H9/175 ,  H03H9/564 ,  H03H9/568 ,  H04B1/52

    摘要： A duplexer (1) comprises a chip (10) including a transmission filter (97) for passing a transmission signal therethrough and interrupting a reception signal and a reception filter (98) for passing a reception signal therethrough and interrupting a transmission signal. Each of the transmission filter (97) and the reception filter (98) includes thin-film piezoelectric resonators (16 and 17) each of which has a piezoelectric thin film that exhibits a piezoelectric property and two excitation electrodes that are disposed on both surfaces of the piezoelectric thin film and apply an excitation voltage to the piezoelectric thin film. All of the thin-film piezoelectric resonators (16 and 17) that the transmission filter (97) and the reception filter (98) include are disposed on a single base.

    摘要翻译： 双工器（1）包括芯片（10），其包括用于通过传输信号并中断接收信号的传输滤波器（97）和用于通过接收信号并中断传输信号的接收滤波器（98）。 发送滤波器（97）和接收滤波器（98）中的每一个均包括薄膜压电谐振器（16和17），每个薄膜压电谐振器具有压电性能的压电薄膜和设置在两个表面上的压电特性的两个激励电极 压电薄膜，并向压电薄膜施加激发电压。 发送滤波器（97）和接收滤波器（98）包括的所有薄膜压电谐振器（16和17）都设置在单个基座上。

    Duplexer filter having film bulk acoustic resonator and semiconductor package thereof
    57.
    发明申请
    Duplexer filter having film bulk acoustic resonator and semiconductor package thereof 失效
    具有膜体声波谐振器的双相滤波器及其半导体封装

    公开(公告)号：US20040164367A1

    公开(公告)日：2004-08-26

    申请号：US10780713

    申请日：2004-02-19

    发明人： Jae-Yeong Park

    IPC分类号： H01L021/00 ,  H01L029/82

    CPC分类号： H03H9/706 ,  H03H9/02094 ,  H03H9/0571 ,  H03H9/0576 ,  H03H9/173 ,  H03H9/174 ,  H03H9/175 ,  H03H9/587 ,  H03H9/72 ,  H03H9/725

    摘要： Disclosed are a film bulk acoustic resonator, a duplexer filter having the same, and a semiconductor package thereof. The film bulk acoustic resonator comprising: a semiconductor substrate; a lower electrode more than two layers formed at an upper surface of the semiconductor substrate; a piezoelectric layer deposited on an upper surface of the lower electrode with a certain thickness; and an upper electrode more than two layers formed at an upper surface of the piezoelectric layer, has an excellent bonding characteristic. The duplexer filter can microminiaturize a size thereof by integrating a film bulk acoustic filter formed by connecting the plurality of film bulk acoustic resonators serially and in parallel and peripheral passive elements of the film bulk acoustic filter into one semiconductor chip. Also, the semiconductor package is suitable for the duplexer filter.

    摘要翻译： 公开了一种薄膜体声波谐振器，具有该双体滤波器的双层滤波器及其半导体封装。 该膜体声波谐振器包括：半导体衬底; 形成在所述半导体衬底的上表面的多于两层的下电极; 沉积在具有一定厚度的下电极的上表面上的压电层; 并且形成在压电层的上表面处的多于两层的上电极具有优异的接合特性。 双工器滤波器可以通过将通过将多个膜体声波谐振器串联并联并联的薄膜体声滤波器与薄膜体声滤波器的外围无源元件组合成一个半导体芯片而将其尺寸微小化。 此外，半导体封装适用于双工器滤波器。

    Multi-frequency antenna duplexer
    58.
    发明申请
    Multi-frequency antenna duplexer 有权
    多频天线双工器

    公开(公告)号：US20020186097A1

    公开(公告)日：2002-12-12

    申请号：US10049257

    申请日：2002-06-14

    发明人： Toru Sakuragawa ,  Yuki Satoh ,  Kozo Murakami ,  Ryoichi Takayama

    IPC分类号： H01P001/213 ,  H03H009/64

    CPC分类号： H03H9/706 ,  H03H9/0571 ,  H03H9/0576 ,  H03H9/72 ,  H03H9/725 ,  H03H2250/00

    摘要： A small-size multi-frequency antenna duplexer using surface acoustic wave filters and capable of dealing with a plurality of frequencies. Each antenna duplexer comprises two surface acoustic wave (SAW) filters used for transmission and reception, respectively, and having different frequency pass bands; a phase substrate; and a package housing the foregoing filters and substrate. The pass bands of the antenna duplexers are different from one another. This multi-frequency antenna duplexer comprises a plurality of antenna duplexers. A respective package (14) contains a transmitting surface acoustic wave filter (11a, 11b), a receiving surface acoustic wave filter (12a, 12b) and a phase substrate (13a, 13b). In this way, the size of multi-frequency antenna duplexer can be reduced.

    摘要翻译： 一种使用表面声波滤波器并且能够处理多个频率的小尺寸多频天线双工器。 每个天线双工器包括分别用于发送和接收并具有不同频带的两个表面声波（SAW）滤波器; 相衬底; 以及容纳上述过滤器和基板的包装。 天线双工器的通带彼此不同。 该多频天线双工器包括多个天线双工器。 相应的封装（14）包含透射表面声波滤波器（11a，11b），接收声表面波滤波器（12a，12b）和相位衬底（13a，13b）。 以这种方式，可以减小多频天线双工器的尺寸。

    ACOUSTIC WAVE DEVICE
    59.
    发明申请
    ACOUSTIC WAVE DEVICE 审中-公开

    公开(公告)号：US20170346463A1

    公开(公告)日：2017-11-30

    申请号：US15430849

    申请日：2017-02-13

    申请人： TAIYO YUDEN CO., LTD.

    发明人： Kazushige HATAKEYAMA ,  Takuma KUROYANAGI

    IPC分类号： H03H9/64

    CPC分类号： H03H9/02913 ,  H03H9/02086 ,  H03H9/0523 ,  H03H9/0547 ,  H03H9/0571 ,  H03H9/0576 ,  H03H9/1014 ,  H03H9/1071 ,  H03H9/64

    摘要： An acoustic wave device includes: a first substrate that includes a first acoustic wave filter located on an upper surface of the first substrate; a second substrate that is flip-chip mounted on the upper surface of the first substrate through a bump, and includes a second acoustic wave filter on a lower surface of the second substrate, the lower surface of the second substrate facing the upper surface of the first substrate across an air gap; and a shield electrode that is supported by the upper surface of the first substrate, and is located between at least a part of the first acoustic wave filter and at least a part of the second acoustic wave filter through the air gap.