公开(公告)号：US07833826B2

公开(公告)日：2010-11-16

申请号：US12323655

申请日：2008-11-26

Applicant: Shinsuke Oka

Inventor： Shinsuke Oka

IPC: H01L21/00

CPC classification number: H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78696 ,  H01L31/03685 ,  H01L31/1824 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

Abstract: After a gate oxide film 10 has been formed on a silicon substrate G, a first step of forming a microcrystalline silicon film by high electron density plasma of an electron temperature of 2.0 eV or less and a second step of forming an ultra-microcrystalline silicon film by high electron density plasma of an electron temperature higher than 2.0 eV are repeated. A stacked-layer film 20 of the ultra-microcrystalline silicon film and the microcrystalline silicon film is thereby formed. With the film formation method described above, at least one of an n-channel thin-film transistor and a p-channel thin-film transistor with the stacked-layer film 20 functioned as an active layer may be manufactured.

Abstract translation: 在硅基板G上形成了栅极氧化膜10之后，通过电子温度为2.0eV以下的高电子密度等离子体形成微晶硅膜的第一工序和形成超微晶硅膜的第二工序 通过高电子密度重复电子温度高于2.0eV的等离子体。 由此形成超微晶硅膜和微晶硅膜的叠层膜20。 利用上述成膜方法，可以制造作为活性层的层叠膜20的n沟道薄膜晶体管和p沟道型薄膜晶体管中的至少一种。

公开(公告)号：US20100269896A1

公开(公告)日：2010-10-28

申请号：US12637630

申请日：2009-12-14

Applicant: Shuran SHENG ,  Yong Kee Chae

Inventor： Shuran SHENG ,  Yong Kee Chae

IPC: H01L31/0288 ,  H01L31/02 ,  B05C11/00

CPC classification number: C23C16/325 ,  C23C16/5096 ,  H01L31/0236 ,  H01L31/0547 ,  H01L31/075 ,  H01L31/076 ,  H01L31/1824 ,  H01L31/202 ,  Y02E10/52 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

Abstract: A method and apparatus for forming solar cells is provided. Doped crystalline semiconductor alloys including carbon, oxygen, and nitrogen are used as light-trapping enhancement layers and charge collection layers for thin-film solar cells. The semiconductor alloy layers are formed by providing semiconductor source compound and a co-component source compound to a processing chamber and ionizing the gases to deposit a layer on a substrate. The alloy layers provide improved control of refractive index, wide optical bandgap and high conductivity.

Abstract translation: 提供一种用于形成太阳能电池的方法和装置。 包括碳，氧和氮的掺杂的晶体半导体合金被用作薄膜太阳能电池的光俘获增强层和电荷收集层。 半导体合金层通过向处理室提供半导体源化合物和共组分源化合物形成，并使气体离子化以在衬底上沉积一层。 合金层提供改进的折射率控制，宽光学带隙和高导电性。

公开(公告)号：US20100267193A1

公开(公告)日：2010-10-21

申请号：US12654493

申请日：2009-12-22

Applicant: Jeong-Woo Lee ,  Seong-Kee Park ,  Kyung-Jin Shim ,  Tae-Youn Kim ,  Won-Seo Park

Inventor： Jeong-Woo Lee ,  Seong-Kee Park ,  Kyung-Jin Shim ,  Tae-Youn Kim ,  Won-Seo Park

IPC: H01L31/0376

CPC classification number: H01L31/202 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/03921 ,  H01L31/075 ,  H01L31/078 ,  H01L31/1824 ,  H01L31/1884 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

Abstract: A method of manufacturing a solar cell includes forming a transparent conductive layer on a substrate by depositing a transparent conductive oxide under room temperature, crystallizing the transparent conductive layer by irradiating a laser beam to the transparent conductive layer using a first laser; selectively etching the crystallized transparent conductive layer to form embossed and depressed patterns at a surface of the transparent conductive layer; forming transparent electrodes in unit cells by patterning the transparent conductive layer having the embossed and depressed patterns; forming a p-n junction semiconductor layer on the transparent electrodes and patterning the p-n junction semiconductor layer; and forming rear electrodes on the patterned p-n junction semiconductor layer by forming a metallic material layer and patterning the metallic material layer, the rear electrodes corresponding to the unit cells.

Abstract translation: 一种制造太阳能电池的方法包括：在室温下沉积透明导电氧化物，在基板上形成透明导电层，通过使用第一激光将激光束照射到透明导电层，使透明导电层结晶化; 选择性地蚀刻结晶的透明导电层以在透明导电层的表面形成压花和凹陷图案; 通过图案化具有压花和凹陷图案的透明导电层，在单元电池中形成透明电极; 在透明电极上形成p-n结半导体层并构图p-n结半导体层; 以及在图案化的p-n结半导体层上形成后电极，通过形成金属材料层和图案化金属材料层，对应于单电池的后电极。

公开(公告)号：US20100267192A1

公开(公告)日：2010-10-21

申请号：US12424954

申请日：2009-04-16

Applicant: FANG MEI ,  David Tanner

Inventor： FANG MEI ,  David Tanner

IPC: H01L31/18 ,  B08B3/00 ,  C11D3/20

CPC classification number: H01L31/1824 ,  B08B3/08 ,  H01L31/03921 ,  H01L31/076 ,  H01L31/202 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

Abstract: The present disclosure relates to methods and related cleaning solutions (116) for cleaning a glass substrate (10, 112), such as for removing metal ion contaminates from a glass substrate (10, 112) having a transparent conductive oxide layer (12). One method includes: providing a glass substrate (10, 112) having a transparent conductive oxide (TCO) layer (12); and exposing the glass substrate (10, 112) to a cleaning solution (116) that includes 0.5% to 5% organic acid, wherein the organic acid used includes citric acid, acetic acid, or oxalic acid.

Abstract translation: 本公开涉及用于清洁玻璃基板（10,112）的方法和相关清洁溶液（116），例如用于从具有透明导电氧化物层（12）的玻璃基板（10,112）去除金属离子污染物。 一种方法包括：提供具有透明导电氧化物（TCO）层（12）的玻璃基板（10,112）; 并将玻璃基板（10,112）暴露于包含0.5％至5％有机酸的清洗溶液（116）中，其中所用的有机酸包括柠檬酸，乙酸或草酸。

公开(公告)号：US20100224229A1

公开(公告)日：2010-09-09

申请号：US12720214

申请日：2010-03-09

Applicant: Martin U. Pralle ,  James E. Carey

Inventor： Martin U. Pralle ,  James E. Carey

IPC: H01L31/042 ,  H01L31/00

CPC classification number: H01L31/0687 ,  H01L31/0236 ,  H01L31/03921 ,  H01L31/076 ,  H01L31/1804 ,  H01L31/1824 ,  H01L31/1864 ,  Y02E10/544 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

Abstract: A multi-junction thin film semiconductor photovoltaic devices having improved absorption properties and increased efficiencies and methods for making the same are disclosed.

Abstract translation: 公开了具有改进的吸收性能和提高效率的多结薄膜半导体光伏器件及其制造方法。

公开(公告)号：US20100206376A1

公开(公告)日：2010-08-19

申请号：US12705477

申请日：2010-02-12

Applicant: Dongjoo You ,  Sehwon Ahn ,  Heonmin Lee ,  Sunho Kim ,  Jeonghun Son

Inventor： Dongjoo You ,  Sehwon Ahn ,  Heonmin Lee ,  Sunho Kim ,  Jeonghun Son

IPC: H01L31/04 ,  H01L31/18 ,  H01L21/203

CPC classification number: C23C16/24 ,  C23C16/45565 ,  H01L31/0745 ,  H01L31/1824 ,  Y02E10/545 ,  Y02P70/521

Abstract: A solar cell, a method and apparatus for manufacturing a solar cell, and a method of depositing a thin film layer are disclosed. The manufacturing apparatus of a solar cell includes a substrate; a first electrode disposed on the substrate; a second electrode; and a photoelectric conversion layer disposed between the first electrode and the second electrode, wherein the photoelectric conversion layer includes a micro-crystalline silicon layer, and sensitivity of the micro-crystalline silicon layer is about 100 to about 1,000, the sensitivity being a ratio expressed as photo conductivity (PC)/dark conductivity (DC).

Abstract translation: 公开了太阳能电池，太阳能电池的制造方法和装置以及沉积薄膜层的方法。 太阳能电池的制造装置包括：基板; 设置在所述基板上的第一电极; 第二电极; 以及设置在所述第一电极和所述第二电极之间的光电转换层，其中所述光电转换层包括微晶硅层，并且所述微晶硅层的灵敏度为约100至约1,000，所述灵敏度为表示的比率 作为光电导率（PC）/暗电导率（DC）。

公开(公告)号：US20100139766A1

公开(公告)日：2010-06-10

申请号：US12623888

申请日：2009-11-23

Applicant: Satoshi TORIUMI ,  Toshiya ENDO ,  Eriko OHMORI

Inventor： Satoshi TORIUMI ,  Toshiya ENDO ,  Eriko OHMORI

IPC: H01L31/04 ,  H01L31/00 ,  H01L31/18

CPC classification number: H01L31/03685 ,  H01L31/0747 ,  Y02E10/545 ,  Y02E10/548

Abstract: A highly-efficient photoelectric conversion device is provided without complicating the manufacturing process. The photoelectric conversion device includes a unit cell having a semiconductor junction, in which a first impurity semiconductor layer having one conductivity type, a semiconductor layer including a first semiconductor region having a larger proportion of a crystalline semiconductor than an amorphous semiconductor and a second semiconductor region having a larger proportion of an amorphous semiconductor than a crystalline semiconductor and including both a radial crystal and a crystal having a needle-like growing end in the amorphous semiconductor, and a second impurity semiconductor layer having a conductivity type opposite to the conductivity type of the first impurity semiconductor layer are stacked in this order.

Abstract translation: 提供高效的光电转换装置，而不会使制造过程复杂化。 光电转换装置包括具有半导体结的单位电池，其中具有一种导电类型的第一杂质半导体层，包括具有比非晶半导体更大比例的结晶半导体的第一半导体区域的半导体层和第二半导体区域 具有比结晶半导体更大比例的非晶半导体，并且在非晶半导体中包括径向晶体和具有针状生长端的晶体，以及具有与导电类型相反的导电类型的第二杂质半导体层 第一杂质半导体层按顺序堆叠。

公开(公告)号：US20100132791A1

公开(公告)日：2010-06-03

申请号：US12597497

申请日：2008-05-29

Applicant: Jae-Ho Kim

Inventor： Jae-Ho Kim

IPC: H01L31/0248 ,  H01L31/18 ,  H01L31/042 ,  H01L31/0216 ,  H01L31/0384

CPC classification number: H01L31/03685 ,  H01L31/022466 ,  H01L31/03762 ,  H01L31/0745 ,  H01L31/202 ,  H01L31/208 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

Abstract: A method of fabricating a solar cell includes: sequentially forming a first electrode and a first impurity-doped semiconductor layer on a transparent substrate; forming a first intrinsic semiconductor layer on the first impurity-doped semiconductor layer; heating the first intrinsic semiconductor layer to form a second intrinsic semiconductor layer; and sequentially forming a second impurity-doped semiconductor layer and a second electrode on the second intrinsic semiconductor layer.

Abstract translation: 一种制造太阳能电池的方法包括：在透明基板上依次形成第一电极和第一杂质掺杂半导体层; 在所述第一杂质掺杂半导体层上形成第一本征半导体层; 加热第一本征半导体层以形成第二本征半导体层; 并在第二本征半导体层上依次形成第二杂质掺杂半导体层和第二电极。

公开(公告)号：US07687300B2

公开(公告)日：2010-03-30

申请号：US11876130

申请日：2007-10-22

Applicant: Yong Kee Chae ,  Soo Young Choi

Inventor： Yong Kee Chae ,  Soo Young Choi

IPC: H01L21/00

CPC classification number: H01L31/1824 ,  C23C16/24 ,  C23C16/46 ,  Y02E10/545 ,  Y02P70/521

Abstract: The present invention generally comprises a method for dynamically controlling the temperature of a solar cell substrate during microcrystalline silicon deposition. In amorphous silicon/microcrystalline tandem solar cells, microcrystalline silicon may be deposited using a higher power density and to a greater thickness than amorphous silicon. The higher the power density applied, the faster the deposition may occur, but the temperature of the deposition may also increase. At high temperatures, the likelihood of dopant diffusing into the intrinsic layer of the solar cell and damaging the cell is greater. By dynamically controlling the temperature of the susceptor, the substrate and hence, the dopant can be maintained at a substantially constant temperature below the value at which the dopant may diffuse into the intrinsic layer. The dynamic temperature control permits the microcrystalline silicon to be deposited at a high power density without damaging the solar cell.

Abstract translation: 本发明通常包括在微晶硅沉积期间动态地控制太阳能电池基板的温度的方法。 在非晶硅/微晶串联太阳能电池中，可以使用比非晶硅更高的功率密度和更大的厚度来沉积微晶硅。 施加的功率密度越高，沉积可能发生的越快，但沉积的温度也可能增加。 在高温下，掺杂剂扩散到太阳能电池的本征层并损坏电池的可能性更大。 通过动态地控制基座的温度，衬底和因此掺杂剂可以保持在低于掺杂剂可以扩散到本征层的值的基本上恒定的温度。 动态温度控制允许以高功率密度沉积微晶硅而不损坏太阳能电池。

公开(公告)号：US20090301551A1

公开(公告)日：2009-12-10

申请号：US12466141

申请日：2009-05-14

Applicant: Masud Akhtar ,  Alan E. Delahoy

Inventor： Masud Akhtar ,  Alan E. Delahoy

IPC: H01L31/04 ,  B05D3/14 ,  B32B9/04

CPC classification number: C23C16/24 ,  C23C16/452 ,  C23C16/45593 ,  H01L31/1816 ,  H01L31/1824 ,  Y02E10/545 ,  Y02P70/521

Abstract: A method for depositing a silicon film on a substrate includes a step of flowing a first silicon-containing gaseous composition through an electric discharge generated to form a second silicon-containing composition that is different than the first silicon-containing composition. The second composition is directed into a deposition chamber to form a silicon-containing film on one or more substrates positioned within the deposition chamber. The formation of crystalline silicon is controlled by the temperature of the deposition. Optionally, an activated hydrogen-containing composition is introduced into the deposition chamber during film deposition. The activated hydrogen-containing composition is formed by exposing hydrogen gas to microwave radiation.

Abstract translation: 用于在衬底上沉积硅膜的方法包括使第一含硅气体组合物流过所产生的放电以形成与第一含硅组合物不同的第二含硅组合物的步骤。 将第二组合物引导到沉积室中以在位于沉积室内的一个或多个基底上形成含硅膜。 结晶硅的形成由沉积物的温度控制。 任选地，在膜沉积期间将活化的含氢组合物引入沉积室。 活化的含氢组合物通过将氢气暴露于微波辐射而形成。