公开(公告)号：US09153485B2

公开(公告)日：2015-10-06

申请号：US14258885

申请日：2014-04-22

申请人： Micron Technology, Inc.

发明人： Nishant Sinha ,  Gurtej S. Sandhu

IPC分类号： C23F3/00 ,  H01L21/768

CPC分类号： H01L21/76879 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76867

摘要： Embodiments disclosed include methods of processing substrates, including methods of forming conductive connections to substrates. In one embodiment, a method of processing a substrate includes forming a material to be etched over a first material of a substrate. The material to be etched and the first material are of different compositions. The material to be etched is etched in a dry etch chamber to expose the first material. After the etching, the first material is contacted with a non-oxygen-containing gas in situ within the dry etch chamber effective to form a second material physically contacting onto the first material. The second material comprises a component of the first material and a component of the gas. In one embodiment, the first material is contacted with a gas that may or may not include oxygen in situ within the dry etch chamber effective to form a conductive second material.

摘要翻译： 公开的实施例包括处理衬底的方法，包括形成与衬底的导电连接的方法。 在一个实施例中，处理衬底的方法包括在衬底的第一材料上形成待蚀刻的材料。 待蚀刻的材料和第一种材料具有不同的组成。 待蚀刻的材料在干蚀刻室中蚀刻以暴露第一材料。 在蚀刻之后，第一材料在干蚀刻室内原位与非含氧气体接触，有效地形成物理接触第一材料的第二材料。 第二材料包括第一材料的组分和气体的组分。 在一个实施方案中，第一材料与可在干蚀刻室内原位包含氧的气​​体接触，有效地形成导电的第二材料。

公开(公告)号：US09034772B2

公开(公告)日：2015-05-19

申请号：US13945203

申请日：2013-07-18

申请人： Tokyo Electron Limited

发明人： Koji Maruyama ,  Mikio Yamamoto

IPC分类号： H01L21/302 ,  H01L21/461 ,  C23F1/00 ,  C23F3/00 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/768 ,  H01L21/308 ,  H01J37/32

CPC分类号： H01L21/3065 ,  H01J37/32449 ,  H01J37/32706 ,  H01J2237/334 ,  H01L21/3081 ,  H01L21/76898

摘要： A method of etching a substrate by plasma via a mask having a predetermined pattern at back of a silicon layer of the substrate, a semiconductor device being formed at front of which supported by a support substrate, includes a main etching step in which plasma is generated by supplying a process gas including a mixed gas whose flow ratio of fluorine compound gas, oxygen gas and silicon fluoride gas is 2:1:1.5 or a process gas including a mixed gas in which at least the ratio of one of the oxygen gas and the silicon fluoride gas, using the fluorine compound gas as a standard, is larger than the above ratio, and the substrate is etched by the plasma; and an over etching step in which the substrate is further etched by plasma while applying a high frequency for bias whose frequency is less than or equal to 400 kHz.

摘要翻译： 一种通过等离子体通过在衬底的硅层背面具有预定图案的掩模蚀刻衬底的方法，形成在其前面由支撑衬底支撑的半导体器件包括主要蚀刻步骤，其中产生等离子体 通过提供包括氟化合物气体，氧气和氟化硅气体的流量比为2:1:1.5的混合气体的处理气体，或者包括混合气体的处理气体，其中至少一个氧气与 使用氟化合物气体作为标准的氟化硅气体大于上述比例，并且通过等离子体蚀刻衬底; 以及过蚀刻步骤，其中通过等离子体进一步蚀刻衬底，同时施加频率小于或等于400kHz的偏压的高频。

公开(公告)号：US08409462B2

公开(公告)日：2013-04-02

申请号：US12929707

申请日：2011-02-09

申请人： Joseph Francis Keenan ,  Vadim Mark Daskal ,  James Joseph Hughes

发明人： Joseph Francis Keenan ,  Vadim Mark Daskal ,  James Joseph Hughes

IPC分类号： C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  C23F3/00

CPC分类号： A61B17/3211 ,  A61B17/32 ,  A61B2017/00526 ,  B28D5/022

摘要： A method for manufacturing surgical blades from either a crystalline or poly-crystalline material, preferably in the form of a wafer, is disclosed. The method includes preparing the crystalline or poly-crystalline wafers by mounting them and machining trenches into the wafers. The methods for machining the trenches, which form the bevel blade surfaces, include a diamond blade saw, laser system, ultrasonic machine, and a hot forge press. The wafers are then placed in an etchant solution which isotropically etches the wafers in a uniform manner, such that layers of crystalline or poly-crystalline material are removed uniformly, producing single or double bevel blades. Nearly any angle can be machined into the wafer which remains after etching. The resulting radii of the blade edges is 5-500 nm, which is the same caliber as a diamond edged blade, but manufactured at a fraction of the cost.

摘要翻译： 公开了一种从晶体或多晶材料制造手术刀片的方法，优选以晶片的形式。 该方法包括通过安装晶片或多晶晶片并将沟槽加工到晶片中来制备。 用于加工形成斜面刀片表面的沟槽的方法包括金刚石刀片锯，激光系统，超声波机器和热锻压机。 然后将晶片放置在蚀刻剂溶液中，其均匀地蚀刻晶片，使得均匀地去除晶体或多晶材料层，产生单斜面或双斜面叶片。 在蚀刻后保留的晶片中几乎可以加工任何角度。 叶片边缘的最终半径为5-500nm，其与金刚石边缘刀片相同的口径，但是以成本的一小部分制造。

公开(公告)号：US08404595B2

公开(公告)日：2013-03-26

申请号：US11860788

申请日：2007-09-25

申请人： Masanobu Honda ,  Manabu Sato ,  Yoshiki Igarashi

发明人： Masanobu Honda ,  Manabu Sato ,  Yoshiki Igarashi

IPC分类号： H01L23/302 ,  H01L21/461 ,  B23P15/00 ,  C03C25/00 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  C23F3/00 ,  B44C1/22

CPC分类号： H01L21/467 ,  H01J37/32091 ,  H01J37/32165 ,  H01L21/31116

摘要： A plasma processing method for processing a target substrate uses a plasma processing apparatus which includes a vacuum evacuable processing vessel for accommodating the target substrate therein, a first electrode disposed in the processing vessel and connected to a first RF power supply for plasma generation and a second electrode disposed to face the first electrode. The method includes exciting a processing gas containing fluorocarbon in the processing vessel to generate a plasma while applying a negative DC voltage having an absolute value ranging from about 100 V to 1500 V or an RF power of a frequency lower than about 4 MHz to the second electrode. The target layer is etched by the plasma, thus forming recesses on the etching target layer based on the pattern of the resist layer.

摘要翻译： 用于处理目标基板的等离子体处理方法使用等离子体处理装置，该等离子体处理装置包括用于容纳目标基板的真空可排除处理容器，设置在处理容器中的第一电极，并连接到用于等离子体产生的第一RF电源， 设置成面对第一电极的电极。 该方法包括在处理容器中激发含有碳氟化合物的处理气体，以产生等离子体，同时施加绝对值范围从约100V至1500V或低于约4MHz的RF功率的负DC电压至第二 电极。 通过等离子体蚀刻目标层，由此基于抗蚀剂层的图案在蚀刻目标层上形成凹部。

公开(公告)号：US08187486B1

公开(公告)日：2012-05-29

申请号：US12002085

申请日：2007-12-13

申请人： Xinye Liu ,  Chiukin Steven Lai

发明人： Xinye Liu ,  Chiukin Steven Lai

IPC分类号： B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  C23F3/00

CPC分类号： C23F1/08 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/76229 ,  H01L21/76814 ,  H01L21/76837

摘要： Etching of nitride and oxide layers with reactant gases is modulated by etching in different process regimes. High etch selectivity to silicon nitride is achieved in an adsorption regime where the partial pressure of the etchant is lower than its vapor pressure. Low etch selectivity to silicon nitride is achieved in a condensation regime where the partial pressure of the etchant is higher than its vapor pressure. By controlling partial pressure of the etchant, very high etch selectivity to silicon nitride may be achieved.

摘要翻译： 用反应气体蚀刻氮化物和氧化物层是通过不同工艺制程的蚀刻来调节的。 在其中蚀刻剂的分压低于其蒸汽压力的吸附方案中实现了对氮化硅的高蚀刻选择性。 在其中腐蚀剂的分压高于其蒸汽压力的冷凝方案中实现对氮化硅的低蚀刻选择性。 通过控制蚀刻剂的分压，可以实现对氮化硅的非常高的蚀刻选择性。

公开(公告)号：US07578946B2

公开(公告)日：2009-08-25

申请号：US10635651

申请日：2003-08-07

申请人： Taro Ikeda

发明人： Taro Ikeda

IPC分类号： B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F3/00

CPC分类号： H01L21/02046 ,  H01J37/321 ,  H01J37/32165 ,  H01L21/32137

摘要： An object of the present invention is to provide a plasma processing system and a plasma processing method which use inductive coupled plasmas but do not cause disadvantages due to slant electric fields immediately after plasmas have been ignited. An other object of the present invention is to provide a plasma processing system and a plasma processing method which use inductive coupled plasmas and include a Faraday shield to thereby remove slant magnetic fields so as to ensure the ignition of plasmas.The plasma processing system comprises a chamber 31, a bell jar 32, a coil 42 disposed on the outside of the belljar 32, a Faraday shield 44 disposed between the belljar 32 and the coil 42, a susceptor 33, a conducting member 49 disposed upper of the belljar 32, a first high-frequency electric power source for the coil 42 to generate induced electromagnetic fields, and a second high-frequency electric power source 34 for generating electric fields between the susceptor 33 and the conducting member 49.

摘要翻译： 本发明的目的是提供一种等离子体处理系统和等离子体处理方法，其使用电感耦合等离子体，但是在等离子体点火之后立即不会由于倾斜电场而引起缺点。 本发明的另一个目的是提供一种等离子体处理系统和等离子体处理方法，其使用电感耦合等离子体并包括法拉第屏蔽，从而去除倾斜的磁场，以确保等离子体的点燃。 等离子体处理系统包括一个室31，一个钟罩32，一个设在喇叭口32的外侧的一个线圈42，一个位于喇叭口32与线圈42之间的法拉第屏蔽罩44，一个基座33，一个设在上面的导电件49 喇叭形32，用于线圈42产生感应电磁场的第一高频电源，以及用于在基座33和导电部件49之间产生电场的第二高频电源34。

公开(公告)号：US20060160472A1

公开(公告)日：2006-07-20

申请号：US11369973

申请日：2006-03-08

申请人： Shiro Kawashima ,  Hiromi Akahori ,  Matuo Suzuki ,  Hidekatu Hirahara ,  Aturo Yamamoto ,  Katuya Kawamori

发明人： Shiro Kawashima ,  Hiromi Akahori ,  Matuo Suzuki ,  Hidekatu Hirahara ,  Aturo Yamamoto ,  Katuya Kawamori

IPC分类号： B24C1/00 ,  B32B3/30 ,  B22F5/00 ,  C23F3/00

CPC分类号： B24C1/06 ,  B24C3/325 ,  Y10T29/47 ,  Y10T29/479 ,  Y10T428/12229 ,  Y10T428/12389 ,  Y10T428/12993

摘要： There is provided a surface treated product that moves relatively in a fluid, wherein a surface of the surface treated product has continuous dimples, each dimple having a diameter of 10 to 2500 μm and a depth of 50 μm or less. The surface treated product significantly reduces resistance of a fluid to an object in the fluid, and significantly improves a flow state of the fluid.

摘要翻译： 提供了一种在流体中相对运动的表面处理产品，其中表面处理产品的表面具有连续的凹坑，每个凹窝的直径为10至2500μm，深度为50μm或更小。 表面处理的产品显着降低流体中流体对物体的阻力，并显着改善流体的流动状态。

公开(公告)号：US20060096952A1

公开(公告)日：2006-05-11

申请号：US11266232

申请日：2005-11-04

申请人： Masanobu Honda

发明人： Masanobu Honda

IPC分类号： C23F1/00 ,  B44C1/22 ,  G05B21/00 ,  C23F3/00

CPC分类号： H01L21/31116

摘要： Disclosed is a plasma processing method for processing a target object by using a plasma of a process gas containing a fluorocarbon compound. Used is a fluorocarbon compound having at least one triple bond within the molecule and at least one CF3 group bonded by a single bond to the carbon atom forming the triple bond with the adjacent carbon atom such as 1,1,1,4,4,4-hexafluoro-2-butyne or 1,1,1,4,4,5,5,5-octafluoro-2-pentyne.

摘要翻译： 公开了一种通过使用含有氟碳化合物的处理气体的等离子体来处理目标物体的等离子体处理方法。 使用的是在分子内具有至少一个三键的氟碳化合物和至少一个通过单键与碳原子键合的至少一个CF 3基团，与碳原子形成与相邻碳原子的三键，例如1， 1,1,4,4,4-六氟-2-丁炔或1,1,1,4,4,5,5,5-八氟-2-戊炔。

公开(公告)号：US20060057472A1

公开(公告)日：2006-03-16

申请号：US10940714

申请日：2004-09-15

申请人： Robert Fu Tsai

发明人： Robert Fu Tsai

IPC分类号： C23F1/00 ,  C25D5/02 ,  C23F3/00 ,  B44C1/22 ,  G03F1/00

CPC分类号： C23F4/00 ,  C23C18/1605 ,  C23C18/1608 ,  C23C18/1653 ,  C23C18/1689 ,  C23C18/1879 ,  C23C18/52 ,  C23F1/02 ,  C25D5/022 ,  C25D5/48 ,  G03F1/46 ,  G03F1/54 ,  G03F1/68

摘要： A method for making a chrome photo-mask is disclosed. A photo-mask blank is activated with activator on its upper surface for electroless chrome plating Next, the activated photo-mask blank is then immersed in the electroless chrome plating solution for being coated with a thin chrome layer. The electroless chrome plating process will continue until a desired thickness is formed. Preferably, an electro-plating process is employed after the growth of an initial electroless chrome layer. Then, the photo-mask blank with the chrome layer is subject to oxidation for forming an antireflection layer on the chrome layer. After the antireflective layer is successively formed, a resist film is formed on the antireflective layer. The resist film is then patterned in accordance with the predetermined pattern. Next, the antireflective layer and the chromium layer are dry-etched or wet-etched through openings in the patterned resist film. The resist film is subsequently stripped to form the desired photo-mask.

摘要翻译： 公开了一种制造铬光掩模的方法。 光刻掩模坯料在其上表面用活化剂激活用于无电镀铬接下来，将活化的光掩模坯料浸入无电镀铬溶液中以涂覆薄铬层。 无电镀铬工艺将持续直到形成所需的厚度。 优选地，在初始化学镀铬层生长之后采用电镀工艺。 然后，具有铬层的光掩模坯料经过氧化，以在铬层上形成抗反射层。 在连续形成抗反射层之后，在抗反射层上形成抗蚀剂膜。 然后根据预定图案对抗蚀剂膜进行图案化。 接下来，通过图案化的抗蚀剂膜中的开口对抗反射层和铬层进行干蚀刻或湿蚀刻。 随后剥离抗蚀剂膜以形成所需的光掩模。

公开(公告)号：US07008553B2

公开(公告)日：2006-03-07

申请号：US10339475

申请日：2003-01-09

申请人： Roger Dale Wustman ,  Mark Alan Rosenzweig ,  William Clarke Brooks ,  Brian H. Pilsner ,  James Douglas Risbeck ,  Richard Roy Worthing, Jr.

发明人： Roger Dale Wustman ,  Mark Alan Rosenzweig ,  William Clarke Brooks ,  Brian H. Pilsner ,  James Douglas Risbeck ,  Richard Roy Worthing, Jr.

IPC分类号： B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  C23F3/00

CPC分类号： C23F1/44 ,  F01D5/005 ,  F05D2230/80 ,  F05D2230/90 ,  F05D2300/611 ,  Y02T50/67 ,  Y02T50/671 ,  Y10T29/49318

摘要： A method for selectively removing an aluminide coating from at least one surface of a metal-based substrate by: (a) contacting the surface of the substrate with at least one stripping composition comprising nitric acid at a temperature less than about 20° C. to degrade the coating without damaging the substrate; and (b) removing the degraded coating without damaging the substrate. Also disclosed is a method for replacing a worn or damaged aluminide coating on at least one surface of a metal-based substrate by selectively removing the coating using the above steps, and then applying a new aluminide coating to the surface of the substrate. Turbine engine parts, such as high-pressure turbine blades, treated using the above methods are also disclosed.

摘要翻译： 一种用于通过以下步骤从金属基底材的至少一个表面选择性去除铝化物涂层的方法：（a）使基底的表面与至少一种包含硝酸的汽提组合物在小于约20℃的温度下接触至 降低涂层而不损坏基材; 和（b）除去降解的涂层而不损坏基材。 还公开了一种用于通过使用上述步骤选择性地除去涂层来替代金属基底材的至少一个表面上的磨损或损坏的铝化物涂层的方法，然后将新的铝化物涂层施加到衬底的表面。 还公开了使用上述方法处理的涡轮发动机部件，例如高压涡轮机叶片。