METHOD OF NANOSCALE PATTERNING BASED ON CONTROLLED PINHOLE FORMATION

    公开(公告)号:US20190105812A1

    公开(公告)日:2019-04-11

    申请号:US16099493

    申请日:2017-06-01

    Abstract: A method of nanoscale patterning is disclosed. The method comprises: mixing predetermined amounts of a first solvent and a second solvent to generate a solvent, the first solvent and the second solvent being immiscible with each other; dissolving a solute material in the solvent to generate a coating material, the solute material having solubility that is higher in the first solvent than in the second solvent; and applying the coating material onto a substrate to form a plurality of pinholes in the coating material. The formation of the plurality of pinholes is associated with suspension drops mostly comprised of the second solvent, separated from the solute material dissolved in the first solvent, in the coating material. A method of making a stamp with a nanoscale pattern is also disclosed based on the above method.

    Doping engineered hole transport layer for perovskite-based device

    公开(公告)号:US10115918B2

    公开(公告)日:2018-10-30

    申请号:US15523500

    申请日:2015-11-05

    Abstract: An optoelectronic device is provided, the device comprising an active layer comprising organometal halide perovskite and a hole transport layer (HTL) formed by vacuum evaporation and configured to transport hole carriers. The HTL includes a first sublayer comprising a hole transport material (HTM) doped with an n-dopant and disposed adjacent to the active layer, a second sublayer comprising the HTM that is undoped and disposed adjacent to the first sublayer, and a third sublayer comprising the HTM doped with a p-dopant and disposed adjacent to the second sublayer. The doping concentration of the n-dopant for the n-doped sublayer is determined to match the highest occupied molecular orbital energy level of the n-doped sublayer with the valence band maximum energy level of the perovskite active layer.

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