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    PROCESS FOR PREPARING ALKYL-INDIUM COMPOUNDS AND THE USE THEREOF
    62.
    发明申请
    PROCESS FOR PREPARING ALKYL-INDIUM COMPOUNDS AND THE USE THEREOF 审中-公开

    公开(公告)号：US20170349610A1

    公开(公告)日：2017-12-07

    申请号：US15550136

    申请日：2016-02-11

    申请人： UMICORE AG & CO. KG

    发明人： Annika FREY ,  Ralf KARCH ,  Andreas RIVAS-NASS ,  Eileen WOERNER ,  Angelino DOPPIU

    IPC分类号： C07F5/00

    CPC分类号： C07F5/00

    摘要： The invention relates to a process for the cost-effective and environmentally responsible preparation of alkyl indium sesquichloride in high yield and with high selectivity and purity. The alkyl indium sesquichloride prepared in accordance with the invention is particularly suitable, also as a result of its high purity and yield, for preparation of indium-containing precursors in accordance with demand, in high yield and with high selectivity and purity. As a result of the high purity, the indium-containing precursors that are preparable are particularly suitable for metal-organic chemical vapor deposition (MOCVD) or metal-organic vapor phase epitaxy (MOVPE). The novel process according to the invention is characterized by the improved execution of the process, in particular by rapid process control. Owing to targeted and extensive use of raw materials that are inexpensive and have a low level of environmental pollution, the process is also suitable for use on an industrial scale.

    METHOD FOR PRODUCING TRIALKYLGALLIUM COMPOUNDS AND THE USE THEREOF
    66.
    发明申请
    METHOD FOR PRODUCING TRIALKYLGALLIUM COMPOUNDS AND THE USE THEREOF 审中-公开

    公开(公告)号：US20170081344A1

    公开(公告)日：2017-03-23

    申请号：US15126043

    申请日：2015-03-12

    申请人： Umicore AG & Co. KG

    发明人： Wolf SCHORN ,  Jörg SUNDERMEYER ,  Annika FREY ,  Ralf KARCH ,  Andreas RIVAS-NASS ,  Eileen WOERNER ,  Angelino DOPPIU

    IPC分类号： C07F5/00 ,  C23C16/18 ,  H01L21/02

    CPC分类号： C07F5/00 ,  C23C16/18 ,  H01L21/0262

    摘要： The invention relates to an improved process for inexpensive and environmentally benign preparation of trialkylgallium compounds of the general formula: R3Ga in high yield and selectivity, where R is alkyl of 1 to 4 carbon atoms. Trialkylgallium is prepared according to the invention via the intermediate stage alkylgallium dichloride (RGaCl2) or dialkylgallium chloride/alkylgallium dichloride mixture (R2GaCl/RGaCl2). The RGaCl2 obtained or the R2GaCl/RGaCl2 mixture also forms part of the subject-matter of the present invention.The novel process of the present invention is notable for improved process management. The process intentionally makes substantial use of inexpensive starting materials and reagents of low environmental impact and so is also useful for the industrial scale.The trialkylgallium compounds obtained are very pure and so are particularly useful as organometallic precursor for metal-organic chemical vapour deposition (MOCVD) or metal-organic vapour phase epitaxy (MOVPE) in semiconductor and microsystem technology.