公开(公告)号：US20190221698A1

公开(公告)日：2019-07-18

申请号：US16194029

申请日：2018-11-16

申请人： Alta Devices, Inc.

发明人： Brendan M. KAYES ,  Sylvia SPRUYTTE ,  I-Kang DING ,  Rose TWIST ,  Gregg HIGASHI

IPC分类号： H01L31/056 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/0735 ,  H01L31/0725

CPC分类号： H01L33/38 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/02363 ,  H01L31/056 ,  H01L31/0684 ,  H01L31/0725 ,  H01L31/0735 ,  H01L33/52 ,  Y02E10/52 ,  Y02E10/547

摘要： An optoelectronic device is disclosed. The optoelectronic device comprises a semiconductor structure; a plurality of contacts on the front side of the semiconductor structure; and a plurality of non-continuous metal contacts on a back side of the semiconductor structure. In an embodiment, a plurality of non-continuous back contacts on an optoelectronic device improve the reflectivity and reduce the losses associated with the back surface of the device.

公开(公告)号：US10337087B2

公开(公告)日：2019-07-02

申请号：US15876001

申请日：2018-01-19

申请人： ALTA DEVICES, INC.

发明人： Thomas Gmitter ,  Gang He ,  Melissa Archer ,  Siew Neo

IPC分类号： C22C29/00 ,  C30B33/06 ,  C30B29/42 ,  C30B29/40 ,  C30B33/08 ,  C30B29/00 ,  C30B33/10

摘要： Embodiments described herein provide processes for forming and removing epitaxial films and materials from growth wafers by epitaxial lift off (ELO) processes. In some embodiments, the growth wafer has edge surfaces with an off-axis orientation which is utilized during the ELO process. The off-axis orientation of the edge surface provides an additional variable for controlling the etch rate during the ELO process and therefore the etch front may be modulated to prevent the formation of high stress points which reduces or prevents stressing and cracking the epitaxial film stack. In one embodiment, the growth wafer is rectangular and has an edge surface with an off-axis orientation rotated by an angle greater than 0° and up to 90° relative to an edge orientation of at 0°.

公开(公告)号：US20190109261A1

公开(公告)日：2019-04-11

申请号：US16198139

申请日：2018-11-21

申请人： Alta Devices, Inc.

发明人： Brendan C. KAYES ,  Sylvia SPRUYTTE ,  I-Kang DING ,  Rose TWIST ,  Gregg HIGASHI

IPC分类号： H01L33/38 ,  H01L31/056 ,  H01L31/0216 ,  H01L31/068

摘要： An optoelectronic device is disclosed. The optoelectronic device comprises a semiconductor structure; a plurality of contacts on the front side of the semiconductor structure; and a plurality of non-continuous metal contacts on a back side of the semiconductor structure. In an embodiment, a plurality of non-continuous back contacts on an optoelectronic device improve the reflectivity and reduce the losses associated with the back surface of the device.

公开(公告)号：US20180240928A1

公开(公告)日：2018-08-23

申请号：US15958844

申请日：2018-04-20

申请人： Alta Devices, Inc.

发明人： Brendan M. KAYES ,  Hui NIE ,  Isik C. KIZILYALLI

IPC分类号： H01L31/0735 ,  H01L31/0224 ,  H01L31/18

CPC分类号： H01L31/0735 ,  H01L31/022441 ,  H01L31/1896 ,  Y02E10/52 ,  Y02E10/544

摘要： Embodiments generally relate to optoelectronic semiconductor devices such as solar cells. In one aspect, a device includes an absorber layer made of gallium arsenide (GaAs) and having only one type of doping. An emitter layer is located closer than the absorber layer to a back side of the device and is made of a different material and having a higher bandgap than the absorber layer. A heterojunction is formed between the emitter layer and the absorber layer, and a p-n junction is formed between the emitter layer and the absorber layer and at least partially within the different material at a location offset from the heterojunction. An intermediate layer is located between the absorber layer and the emitter layer and provides the offset of the p-n junction from the heterojunction, and includes a graded layer and an ungraded back window layer.

公开(公告)号：US20180229342A1

公开(公告)日：2018-08-16

申请号：US15953064

申请日：2018-04-13

申请人： Alta Devices, Inc.

发明人： Stephen M. FISHER ,  Robindranath BANERJEE ,  Christopher L. BEAUDRY ,  Brian J. BROWN

IPC分类号： B24B7/22

CPC分类号： B24B7/228 ,  B24B7/224 ,  B24B27/0023 ,  B24B27/0069 ,  B24B27/0076 ,  B24B37/105 ,  B24B37/345 ,  B24B41/005 ,  H01L21/67173 ,  H01L21/67219 ,  H01L21/6776 ,  H01L31/00 ,  H01L31/18

摘要： A method and system for polishing a plurality of workpieces is disclosed. The method and system comprises providing a polishing tool with multiple polishing heads; and providing a substrate tray that can hold the plurality of work pieces in a fixed position on a tray underneath the polishing heads. The system and method includes moving the tray within the polisher. Finally, the method and system includes configuring the multiple polishing heads with the appropriate pad/slurry combinations to polish the workpieces and to create a finished polished surface on the plurality of work pieces.

公开(公告)号：US09853489B2

公开(公告)日：2017-12-26

申请号：US14989659

申请日：2016-01-06

申请人： ALTA DEVICES, Inc.

发明人： Gang He ,  Brendan Kayes ,  Christopher France

IPC分类号： H01M10/44 ,  H02J7/00 ,  H02J7/35 ,  H02J7/02 ,  H02J50/30 ,  H02J50/90

CPC分类号： H02J7/355 ,  H02J7/0036 ,  H02J7/0044 ,  H02J7/025 ,  H02J7/35 ,  H02J50/30 ,  H02J50/90

摘要： A charging device configured to charge a mobile device through the solar cells integrated on the mobile device. The charging device converts wall power to light energy which can be absorbed by the solar cells and then converted to electricity for storage in the rechargeable battery of the mobile device. The charging device includes a light source configured to emit a light beam having a spectrum tuned to the spectral response of the solar cells. The charging device includes a proximity sensor for detecting the presence of a mobile device within the charging device housing and responsively signaling the activation of the light source. The charging device includes logic for wirelessly communicating with the mobile device as well as controlling the charging process in various stages and aspects. The light source may be LEDs that also serve to transmit light communication signals to the mobile device.

公开(公告)号：US20170323987A1

公开(公告)日：2017-11-09

申请号：US15656575

申请日：2017-07-21

申请人： ALTA DEVICES, INC.

发明人： Hui NIE ,  Brendan M. KAYES ,  Isik C. KIZILYALLI

IPC分类号： H01L31/0304 ,  H01L31/0443 ,  H01L31/0735 ,  H01L27/142

CPC分类号： H01L31/03046 ,  H01L27/142 ,  H01L31/0304 ,  H01L31/0443 ,  H01L31/0735 ,  Y02E10/544 ,  Y02P70/521

摘要： Embodiments of the invention generally relate to photovoltaic devices. In one embodiment, a method for forming a gallium arsenide based photovoltaic device includes providing a semiconductor structure, the structure including an absorber layer comprising gallium arsenide. A bypass function is provided in a p-n junction of the semiconductor structure, where under reverse-bias conditions the p-n junction breaks down in a controlled manner by a Zener breakdown effect.

公开(公告)号：US09679814B2

公开(公告)日：2017-06-13

申请号：US14723223

申请日：2015-05-27

申请人： ALTA DEVICES, Inc.

发明人： Melissa Archer ,  Harry Atwater ,  Thomas Gmitter ,  Gang He ,  Andreas Hegedus ,  Gregg Higashi ,  Stewart Sonnenfeldt

IPC分类号： H01L21/78 ,  H01L21/683 ,  H01L21/02 ,  H01L21/306

CPC分类号： H01L21/7813 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/30612 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/7806 ,  H01L2221/6835 ,  H01L2221/68381

摘要： Embodiments of the invention generally relate to epitaxial lift off (ELO) thin films and devices and methods used to form such films and devices. In one embodiment, a method for forming an ELO thin film is provided which includes depositing an epitaxial material over a sacrificial layer on a substrate, adhering a flattened, pre-curved support handle onto the epitaxial material, and removing the sacrificial layer during an etching process. The etching process includes bending the pre-curved support handle to have substantial curvature while peeling the epitaxial material from the substrate and forming an etch crevice therebetween. Compression is maintained within the epitaxial material during the etching process. The flattened, pre-curved support handle may be formed by flattening a pre-curved support material.

公开(公告)号：US09647148B2

公开(公告)日：2017-05-09

申请号：US14480147

申请日：2014-09-08

申请人： ALTA DEVICES, Inc.

发明人： Andreas Hegedus

IPC分类号： H01L21/02 ,  H01L31/0224 ,  H01L31/02 ,  H01L31/18 ,  H01L21/66

CPC分类号： H01L31/022433 ,  H01L22/22 ,  H01L31/0201 ,  H01L31/02013 ,  H01L31/02021 ,  H01L31/188 ,  Y02E10/50

摘要： An optoelectronic device including at least one of a solar device, a semiconductor device, and an electronic device. The device includes a semiconductor unit. A plurality of metal fingers is disposed on a surface of the semiconductor unit for electrical conduction. Each of the metal fingers includes a pad area for forming an electrical contact. The optoelectronic device includes a plurality of pad areas that is available for connection to a bus bar, wherein each of the metal fingers is connected to a corresponding pad area for forming an electrical contact.

公开(公告)号：US09537025B1

公开(公告)日：2017-01-03

申请号：US14696106

申请日：2015-04-24

申请人： Alta Devices, Inc.

发明人： Brendan M. Kayes ,  Gregg S. Higashi ,  Frank Reinhardt ,  Sylvia Spruytte

IPC分类号： H01L31/02 ,  H01L31/0236 ,  H01L31/18 ,  H01L33/00

CPC分类号： H01L31/02363 ,  H01L31/022425 ,  H01L31/02366 ,  H01L31/056 ,  H01L31/0735 ,  H01L31/18 ,  H01L31/184 ,  H01L31/1884 ,  H01L31/1892 ,  H01L33/0062 ,  H01L2933/0091 ,  Y02E10/52 ,  Y02E10/544 ,  Y02P70/521

摘要： Embodiments generally relate to optoelectronic devices and more specifically, to textured layers in optoelectronic devices. In one embodiment, a method for providing a textured layer in an optoelectronic device includes depositing a first layer of a first material and depositing an island layer of a second material on the first layer. Depositing the island layer includes forming one or more islands of the second material to provide at least one textured surface of the island layer, where the textured surface is operative to cause scattering of light.

摘要翻译： 实施例通常涉及光电子器件，更具体地涉及光电器件中的纹理层。 在一个实施例中，用于在光电子器件中提供纹理化层的方法包括沉积第一材料的第一层并在第一层上沉积第二材料的岛层。 沉积岛层包括形成第二材料的一个或多个岛以提供岛层的至少一个纹理表面，其中织构表面可操作以引起光的散射。