公开(公告)号：US10038415B2

公开(公告)日：2018-07-31

申请号：US15516995

申请日：2015-09-23

Applicant: CAVENDISH KINETICS, INC.

Inventor： Ray Parkhurst

IPC: H03F3/191 ,  H03F1/56 ,  H03F3/195 ,  H03F3/213

CPC classification number: H03F1/56 ,  H03F1/565 ,  H03F3/195 ,  H03F3/213 ,  H03F3/245 ,  H03F2200/102 ,  H03F2200/387 ,  H03F2200/451 ,  H03H7/40 ,  H03H2007/013

Abstract: Embodiments disclosed herein generally relate to power amplifier matching circuits used for matching impedance and harmonic control in a device, such as a cellular phone. In one example, a power amplifier matching circuit includes two DVCs, four inductors, a transistor, and a capacitor. Utilizing the two DVCs, the impedance matching ratio and the center frequency of the circuit are capable of adjustment as needed. Moreover, the inclusion of the two DVCs may also prevent harmonic frequencies from undesirably passing through the power amplifier matching circuit to the antenna of a cellular device. The power amplifier matching circuit may be used in conjunction with an amplifier, where the output of the amplifier is proportional to the current in the circuit.

公开(公告)号：US09754724B2

公开(公告)日：2017-09-05

申请号：US14898678

申请日：2014-06-04

Applicant: CAVENDISH KINETICS, INC.

Inventor： Robertus Petrus Van Kampen ,  Richard L. Knipe

IPC: H01L49/02 ,  H01G5/16 ,  H01G5/18

CPC classification number: H01G5/16 ,  H01G5/18 ,  H01L28/60

Abstract: The present invention generally relates to a MEMS digital variable capacitor (DVC) (900) and a method for manufacture thereof. The movable plate (938) within a MEMS DVC should have the same stress level to ensure proper operation of the MEMS DVC. To obtain the same stress level, the movable plate is decoupled from CMOS ground during fabrication. The movable plate is only electrically coupled to CMOS ground after the plate has been completely formed. The coupling occurs by using the same layer (948) that forms the pull-up electrode as the layer that electrically couples the movable plate to CMOS ground. As the same layer couples the movable plate to CMOS ground and also provides the pull-up electrode for the MEMS DVC, the deposition occurs in the same processing step. By electrically coupling the movable plate to CMOS ground after formation, the stress in each of the layers of the movable plate can be substantially identical.

公开(公告)号：US09711291B2

公开(公告)日：2017-07-18

申请号：US14779542

申请日：2014-04-02

Applicant: CAVENDISH KINETICS, INC.

Inventor： Richard L. Knipe ,  Robertus Petrus Van Kampen

IPC: H01G5/18 ,  B81B3/00 ,  H01G5/16 ,  H01H59/00 ,  H01G5/011 ,  H01G5/013

CPC classification number: H01G5/18 ,  B81B3/0051 ,  B81B3/007 ,  B81B2201/0221 ,  H01G5/011 ,  H01G5/0136 ,  H01G5/16 ,  H01H59/0009 ,  H01H2059/0072

Abstract: The present invention generally relates to a MEMS DVC and a method for fabrication thereof. The MEMS DVC comprises a plate movable from a position spaced a first distance from an RF electrode and a second position spaced a second distance from the RF electrode that is less than the first distance. When in the second position, the plate is spaced from the RF electrode by a dielectric layer that has an RF plateau over the RF electrode. One or more secondary landing contacts and one or more plate bend contacts may be present as well to ensure that the plate obtains a good contact with the RF plateau and a consistent Cmax value can be obtained. On the figure PB contact is the plate bend contact, SL contact is the Second Landing contact and the PD electrode is the Pull Down electrode.

公开(公告)号：US20160221823A1

公开(公告)日：2016-08-04

申请号：US15024942

申请日：2014-09-15

Applicant: CAVENDISH KINETICS, INC

Inventor： Mickael RENAULT

IPC: B81C1/00

CPC classification number: B81C1/0038 ,  B81C1/00801 ,  B81C2201/0108 ,  B81C2201/0176 ,  B81C2201/053

Abstract: The present invention generally relates to a method for forming a MEMS device and a MEMS device formed by the method. When forming the MEMS device, sacrificial material is deposited around the switching element within the cavity body. The sacrificial material is eventually removed to free the switching element in the cavity. The switching element has a thin dielectric layer thereover to prevent etchant interaction with the conductive material of the switching element. During fabrication, the dielectric layer is deposited over the sacrificial material. To ensure good adhesion between the dielectric layer and the sacrificial material, a silicon rich silicon oxide layer is deposited onto the sacrificial material before depositing the dielectric layer thereon.

Abstract translation: 本发明一般涉及用于形成MEMS器件的方法和通过该方法形成的MEMS器件。 当形成MEMS器件时，牺牲材料沉积在腔体内的开关元件周围。 牺牲材料最终被去除以释放空腔中的开关元件。 开关元件在其上具有薄的电介质层，以防止蚀刻剂与开关元件的导电材料的相互作用。 在制造期间，介电层沉积在牺牲材料上。 为了确保电介质层和牺牲材料之间的良好粘合性，在沉积其上的电介质层之前，将富硅氧化硅层沉积到牺牲材料上。

公开(公告)号：US20160207763A1

公开(公告)日：2016-07-21

申请号：US14914504

申请日：2014-09-02

Applicant: CAVENDISH KINETICS, INC.

Inventor： Brian I. TROY ,  James F. BOBEY ,  Mickael RENAULT ,  Joseph Damian Gordon LACEY ,  Thomas L. MAGUIRE

IPC: B81C1/00 ,  H01G5/16

CPC classification number: B81C1/00611 ,  H01G5/16

Abstract: The present invention generally relates to a method of fabricating a MEMS device. In the MEMS device, a movable plate is disposed within a cavity such that the movable plate is movable within the cavity. To form the cavity, sacrificial material may be deposited and then the material of the movable plate is deposited thereover. The sacrificial material is removed to free the mov able plate to move within the cavity. The sacrificial material, once deposited, may not be sufficiently planar because the height difference between the lowest point and the highest point of the sacrificial material may be quite high. To ensure the movable plate is sufficiently planar, the planarity of the sacrificial material should be maximized. To maximize the surface planarity of the sacrificial material, the sacrificial material may be deposited and then conductive heated to permit the sacrificial material to reflow and thus, be planarized.

Abstract translation: 本发明一般涉及制造MEMS器件的方法。 在MEMS装置中，可动板设置在空腔内，使得可移动板可在空腔内移动。 为了形成空腔，可以沉积牺牲材料，然后将可移动板的材料沉积在其上。 去除牺牲材料以使可移动板在空腔内移动。 由于牺牲材料的最低点和最高点之间的高度差可能相当高，牺牲材料一旦被沉积就可能不够平坦。 为了确保可动板足够平坦，牺牲材料的平面度应该被最大化。 为了使牺牲材料的表面平坦度最大化，可以沉积牺牲材料，然后进行导电加热，以使牺牲材料回流并因此被平坦化。

公开(公告)号：US20160200565A1

公开(公告)日：2016-07-14

申请号：US14914071

申请日：2014-08-27

Applicant: CAVENDISH KINETICS, INC

Inventor： Mickael RENAULT

IPC: B81B7/00 ,  B81C1/00 ,  H01G5/18 ,  B81B3/00

CPC classification number: B81B7/0006 ,  B81B3/0078 ,  B81B2201/0221 ,  B81C1/00095 ,  B81C1/00341 ,  H01G5/18 ,  H01H1/0036 ,  H01H59/0009 ,  H01H2001/0052 ,  H01H2001/0084

Abstract: The present invention generally relates to an RF MEMS DVC and a method for manufacture thereof. To ensure that undesired grain growth does not occur and contribute to an uneven RF electrode, a multilayer stack comprising an AlCu layer and a layer containing titanium may be used. The titanium diffuses into the AlCu layer at higher temperatures such that the grain growth of the AlCu will be inhibited and the switching element can be fabricated with a consistent structure, which leads to a consistent, predictable capacitance during operation.

Abstract translation: 本发明一般涉及RF MEMS DVC及其制造方法。 为了确保不发生不期望的晶粒生长并且有助于不均匀的RF电极，可以使用包括AlCu层和包含钛的层的多层堆叠。 钛在更高的温度下扩散到AlCu层中，使得AlCu的晶粒生长将被抑制，并且开关元件可以以一致的结构制造，这在操作期间导致一致的可预测的电容。

公开(公告)号：US20160115014A1

公开(公告)日：2016-04-28

申请号：US14895182

申请日：2014-05-30

Applicant: CAVENDISH KINETICS, INC.

Inventor： Robertus Petrus VAN KAMPEN

IPC: B81B3/00 ,  H01G5/16

CPC classification number: B81B3/0086 ,  B81B2201/0221 ,  B81B2203/04 ,  H01G5/16 ,  H01G5/18 ,  H01G5/38 ,  H01H59/0009

Abstract: The present invention generally relates to a MEMS DVC. The MEMS DVC has an RF electrode and is formed above a CMOS substrate. To reduce noise in the RF signal, a poly-resistor that is connected between a waveform controller and the electrodes of the MEMS element, may be surrounded by an isolated p-well or an isolated n-well. The isolated well is coupled to an RF ground shield that is disposed between the poly-resistor and the MEMS element. Due to the presence of the isolated well that surrounds the poly-resistor, the substrate resistance does not influence the dynamic behavior of each MEMS element in the MEMS DVC and noise in the RF signal is reduced.

Abstract translation: 本发明一般涉及一种MEMS DVC。 MEMS DVC具有RF电极并且形成在CMOS衬底之上。 为了降低RF信号中的噪声，连接在波形控制器和MEMS元件的电极之间的多电阻器可以被隔离的p阱或隔离的n阱包围。 隔离的阱耦合到设置在多电阻器和MEMS元件之间的RF接地屏蔽。 由于存在围绕多电阻器的隔离阱，衬底电阻不影响MEMS DVC中每个MEMS元件的动态特性，并且降低了RF信号中的噪声。

公开(公告)号：US20160065058A1

公开(公告)日：2016-03-03

申请号：US14783281

申请日：2014-04-02

Applicant: CAVENDISH KINETICS, INC

Inventor： Robertus Petrus VAN KAMPEN ,  Cong Quoc KHIEU ,  James Douglas HUFFMAN ,  Richard L. KNIPE

IPC: H02M3/07 ,  B81B7/00

CPC classification number: H02M3/07 ,  B81B7/00 ,  B81B7/008 ,  B81B2201/014 ,  B81B2203/0109

Abstract: The present invention generally relates to a DVC having a charge-pump coupled to a MEMS device. The charge-pump is designed to control the output voltage delivered to the electrodes, such as the pull-in electrode or the pull-off electrode, that move the switching element within the MEMS device between locations spaced far from and disposed closely to the RF electrode.

Abstract translation: 本发明一般涉及具有耦合到MEMS器件的电荷泵的DVC。 电荷泵被设计成控制传递到电极的输出电压，例如拉入电极或拉出电极，其将MEMS器件内的开关元件移动到与RF紧密相邻的位置处 电极。

公开(公告)号：US20150235771A1

公开(公告)日：2015-08-20

申请号：US14420152

申请日：2013-08-07

Applicant: CAVENDISH KINETICS, INC.

Inventor： Robertus Petrus Van Kampen ,  Richard L. Knipe

IPC: H01G5/16 ,  H01G5/38

CPC classification number: H01G5/16 ,  H01G5/18 ,  H01G5/38 ,  H01L27/01 ,  H01L27/0207 ,  H01L27/0805 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/19041 ,  H01L2924/19104 ,  H01L2924/0001

Abstract: A variable capacitor (300) comprises cells (200, 400) that have an RF electrode (202, 402) coupled to a bond pad (30). Each cell comprises a plurality of MEMS devices (100) the capacitance of which can be changed by means of a movable electrode. The MEMS devices are placed in a sealed cavity of the cell and are arranged next to each other along the length of the RF electrode of the cell. The RF electrode of each cell can be trimmed so as to obtain an RF line (402) and a further ground electrode (404) and so as to scale the RF capacitance of the cell without impacting the mechanical performance of the MEMS cells. Each cell has the same control capacitance irrespective of the RF capacitance. This allows each cell to use the same isolation resistor required for RF operation and thus each cell has the same parasitic capacitance. This allows the CMOS control circuit to be optimized and the dynamic performance of the cells to be matched.

Abstract translation: 可变电容器（300）包括具有耦合到接合焊盘（30）的RF电极（202,402）的电池（200,400）。 每个单元包括多个MEMS器件（100），其电容可以通过可移动电极来改变。 MEMS器件被放置在电池的密封空腔中并且沿着电池的RF电极的长度彼此相邻地布置。 可以对每个单元的RF电极进行修整，以获得RF线（402）和另外的接地电极（404），以便在不影响MEMS单元的机械性能的情况下缩放电池的RF电容。 每个单元都具有与RF电容无关的相同的控制电容。 这允许每个单元使用RF操作所需的相同的隔离电阻，因此每个单元具有相同的寄生电容。 这允许CMOS控制电路被优化并且电池的动态性能匹配。

公开(公告)号：US20140036345A1

公开(公告)日：2014-02-06

申请号：US13941851

申请日：2013-07-15

Applicant: CAVENDISH KINETICS INC.

Inventor： Charles Gordon SMITH ,  Richard L. KNIPE

IPC: G02B26/08

CPC classification number: G02B26/0833 ,  B81B2201/042 ,  B81C1/00317 ,  B81C2203/0136 ,  B81C2203/0145 ,  G02B26/0841

Abstract: The current disclosure shows how to make a fast switching array of mirrors for projection displays. Because the mirror does not have a via in the middle connecting to the underlying spring support, there is an improved contrast ratio that results from not having light scatter off the legs or vias like existing technologies. Because there are no supporting contacts, the mirror can be made smaller making smaller pixels that can be used to make higher density displays. In addition, because there is not restoring force from any supporting spring support, the mirror stays in place facing one or other direction due to adhesion. This means there is no need to use a voltage to hold the mirror in position. This means that less power is required to run the display.

Abstract translation: 目前的公开内容显示了如何制造用于投影显示器的反射镜的快速切换阵列。 因为反射镜在连接到下面的弹簧支撑件的中间没有通孔，所以存在改善的对比度，这是由于不像现有技术那样从腿部或通孔没有光散射。 因为没有支撑触点，镜子可以做得更小，从而可以用较小的像素来制作更高密度的显示器。 另外，由于没有来自任何支撑弹簧支撑件的恢复力，因为粘附，反射镜保持在面向一个或另一个方向的位置。 这意味着不需要使用电压将镜子保持在适当的位置。 这意味着运行显示器需要较少的电力。