Abstract:
The present invention relates to a heat sink having juxtaposed heat pipes and a method for manufacturing the same. The heat sink includes a base, a plurality of heat pipes and a pair of side strips. The base has a surface on which an open trough and an insertion trough on both sides of the open trough are provided. Each heat pipe has an evaporating section. The evaporating sections are juxtaposed in the open trough and adhered to each other. Each evaporating section has a planar surface. The side strips are fixed into the insertion troughs and protrude from the surface of the base. The planar surface of each evaporating section and the outer surface of each side strip are coplanar. By this structure, the thermal contact surface between the heat pipes and electronic heat-generating sources is increased, so that the heat-dissipating efficiency of the heat sink is improved.
Abstract:
A method for testing a digital camera module reads a digital image from the digital camera module under test, extracts a tricolor coefficient of each pixel of the digital image to form a measurement array, and compares the measurement array with a reference array to find tricolor coefficient differences. The method extracts an edge of the digital image, processes the edge of the digital image using binarization to obtain measurement binary values, and compares the measurement binary values with reference binary values to find binary values differences. The method further compares a count of the tricolor coefficient differences with a first acceptable value, and compares a count of the binary values differences with a second acceptable value to determine quality of the digital camera module.
Abstract:
A liquid crystal composite material and a liquid crystal electro-optical display device are provided. A liquid crystal composite material, includes: a liquid crystal; a polymer; and a modified inorganic layered material, wherein the modified inorganic layered material is formed by modifying an inorganic layered material with a conjugated oligomer, and the conjugated oligomer has a quaternary ammonium group or sulfonate group.
Abstract:
A memory device comprises a memory array, a status register, a status-register write-protect bit and a security register. The memory array contains a number of memory blocks. The status register includes at least one protection bit indicative of a protection status of at least one corresponding block of the memory blocks. The status-register write-protect bit is coupled with the status register for preventing a state change of the at least one protection bit. The security register includes at least one register-protection bit for preventing the state change in one of the at least one protection bit of the status register and the status-register write-protect bit.
Abstract:
A touch panel includes a substrate, and a plurality of sensing pads. The plurality of sensing pads are disposed on the substrate, wherein two adjacent sensing pads are correspondingly disposed in parallel, and each of the sensing pads includes a central part and a plurality of protrusion parts. The central part has a plurality of sides, and the plurality of protrusion parts extend outwardly from each side of the central part. The plurality of protrusion parts disposed between each side of the two adjacent sensing pads are staggeredly arranged in sequence. A gap between any two adjacent sensing pads is identical to each other.
Abstract:
This invention discloses a fabrication method of organic thin-film transistors (OTFTs) using the micro-contact printing. The OTFT can be of the bottom-gate or top-gate configuration. The micro-contact printing operation of this fabrication method does not require clean-room environment and high processing temperature, and does not have the problem of 2D shrinkage of the printed patterns either. Furthermore, the pre-wetting technique employed in the micro-contact printing results in improved fidelity in the pattern transfer and solves the problems of pairing and cross-talking between neighboring patterns.
Abstract:
The invention relates to a nose cleaner in removing booger to make nasal vestibule clean, no matter a nose cleaner alone or a nose and tooth cleaner. A nose cleaner alone has a handle and a nose cleaning body. The nose cleaning body can be put into a nostril in removing booger to make nasal vestibule clean. On the other hand, a nose and tooth cleaner has a handle, a tooth cleaning body, and a nose cleaning body. It is convenient that besides of cleaning teeth with the tooth cleaning body, the nose cleaning body is availed to a user in putting into a nostril and removing booger to make nasal vestibule clean.
Abstract:
A memory and method for charging a word line thereof are disclosed. The memory includes a first word line driver, a first word line and a first switch. The first word line driver is connected to a first operational voltage for receiving a first control signal. The first word line comprises a start terminal connected to an output terminal of the first word line driver. The first switch is connected to a second operational voltage and an end terminal of the first word line. The second operational voltage is not smaller than the first operational voltage. When the first word line driver is controlled by the first control signal to start charging up the first word line, the first switch is simultaneously turned on to provide another charging path for the first word line until the first word line is charged to the first operational voltage.
Abstract:
A system for displaying images is disclosed. A display panel having a multi-domain pixel structure comprises a plurality of electrodes that are physically separated form one another, each defining a domain within pixel, and a capacitance element, electrically connecting the electrodes.
Abstract:
A semiconductor structure comprising an SRAM/inverter cell and a method for forming the same are provided, wherein the SRAM/inverter cell has an improved write margin. The SRAM/inverter cell includes a pull-up PMOS device comprising a gate dielectric over the semiconductor substrate, a gate electrode on the gate dielectric wherein the gate electrode comprises a p-type impurity and an n-type impurity, and a stressor formed in a source/drain region. The device drive current of the pull-up PMOS device is reduced due to the counter-doping of the gate electrode.