公开(公告)号：US20070028771A1

公开(公告)日：2007-02-08

申请号：US11498017

申请日：2006-08-03

Applicant: Ji-Young Shin ,  Chung-Sam Jun ,  Kye-Weon Kim

Inventor： Ji-Young Shin ,  Chung-Sam Jun ,  Kye-Weon Kim

IPC: B01D53/02

CPC classification number: B01D53/70 ,  B01D53/04 ,  B01D53/0454 ,  B01D2253/102 ,  B01D2253/104 ,  B01D2253/106 ,  B01D2253/108 ,  B01D2256/26 ,  B01D2257/2066 ,  B01D2258/0216 ,  B01D2259/40083 ,  B01D2259/402 ,  Y02C20/30

Abstract: PFC is recycled from a gas mixture using adsorption technology and techniques. Two adsorption units each include an adsorbent having a selectivity by which the PFC is selectively adsorbed with respect to the other gas(es) that make up the mixture. The gas mixture is selectively supplied to one of the first and second adsorption units and a condition is created in the first adsorption unit so that the PFC is adsorbed in the first adsorption unit. Once the adsorbent is saturated in the first adsorption unit, a condition is created in the first adsorption unit that causes the PFC to be desorbed. At this time, the gas mixture is selectively supplied to the second adsorption unit, and a condition is created in the second adsorption unit so that the PFC is adsorbed. Once the adsorbent is saturated in the second adsorption unit, a condition is created in the second adsorption unit that causes the PFC to be desorbed. High-purity PFC gas can be obtained from the exhaust gas even if the gas mixture is exhaust gas of a semiconductor device manufacturing process having a low concentration of PFC.

Abstract translation: 使用吸附技术和技术，从气体混合物回收PFC。 两个吸附单元各自包括具有选择性的吸附剂，通过该吸附剂相对于构成混合物的其它气体选择性地吸附PFC。 气体混合物被选择性地供应到第一和第二吸附单元之一，并且在第一吸附单元中产生条件，使得PFC吸附在第一吸附单元中。 一旦吸附剂在第一吸附单元中饱和，则在第一吸附单元中产生使PFC解吸的条件。 此时，将气体混合物选择性地供给到第二吸附单元，并且在第二吸附单元中产生条件以使PFC被吸附。 一旦吸附剂在第二吸附单元中饱和，则在引起PFC解吸的第二吸附单元中产生一个条件。 即使气体混合物是具有低浓度PFC的半导体器件制造方法的废气，也可以从废气中获得高纯度PFC气体。

公开(公告)号：US20070022815A1

公开(公告)日：2007-02-01

申请号：US11428804

申请日：2006-07-05

Applicant: Kwang-Soo KIM ,  Chung-Sam JUN

Inventor： Kwang-Soo KIM ,  Chung-Sam JUN

IPC: G01N29/04

CPC classification number: G01N29/48 ,  G01N29/043 ,  G01N29/223 ,  G01N2291/0421 ,  G01N2291/0422 ,  G01N2291/044 ,  G01N2291/056 ,  G01N2291/101

Abstract: A method of inspecting a substrate is provided comprising applying ultrasonic waves to a substrate, receiving echo pulse signals transmitted through the substrate, and analyzing received echo pulse signals to detect defects in the substrate. Thus, defects in the substrate may be detected.

Abstract translation: 提供一种检查基板的方法，包括向基板施加超声波，接收通过基板传输的回波脉冲信号，以及分析接收到的回波脉冲信号以检测基板中的缺陷。 因此，可以检测衬底中的缺陷。

公开(公告)号：US20070013901A1

公开(公告)日：2007-01-18

申请号：US11423677

申请日：2006-06-12

Applicant: Jong-An Kim ,  Dong-Chun Lee ,  Chung-Sam Jun ,  Ik-Chul Kim ,  Sang-Hee Kim

Inventor： Jong-An Kim ,  Dong-Chun Lee ,  Chung-Sam Jun ,  Ik-Chul Kim ,  Sang-Hee Kim

IPC: G01N21/88

CPC classification number: G01N21/9501 ,  G01N2021/8825

Abstract: An optical inspection tool used to detect surface defects of a substrate include a chuck for holding a substrate and a lens unit disposed over the chuck. The lens unit includes at least a pair of oblique beam paths therein, wherein light penetrating the beam paths travels without angular deflection. The beam paths take the form of spaces formed through the lens unit, or flat portions formed on a lens within the lens unit. A camera is installed on the lens unit, and the camera converts light passing through the lens unit into an image. Methods of detecting surface defects of the substrate using the inspection tool are also provided.

Abstract translation: 用于检测基板的表面缺陷的光学检查工具包括用于保持基板的卡盘和设置在卡盘上方的透镜单元。 透镜单元在其中包括至少一对倾斜光束路径，其中穿透光束路径的光行进而没有角度偏转。 光束路径采取通过透镜单元形成的空间的形式，或形成在透镜单元内的透镜上的平坦部分。 相机安装在镜头单元上，相机将通过镜头单元的光转换为图像。 还提供了使用检查工具检测基板的表面缺陷的方法。

公开(公告)号：US07046760B2

公开(公告)日：2006-05-16

申请号：US10789445

申请日：2004-03-01

Applicant: Tae-Kyoung Kim ,  Sun-Yong Choi ,  Chung-Sam Jun ,  Jeong-Hyun Choi

Inventor： Tae-Kyoung Kim ,  Sun-Yong Choi ,  Chung-Sam Jun ,  Jeong-Hyun Choi

IPC: G01N23/223 ,  H01L21/66

CPC classification number: H01L22/14 ,  H01L21/32155

Abstract: A method of measuring a concentration of dopants of an objective thin film includes measuring a concentration of dopants of a first wafer, forming the objective thin film on the first wafer to form a second wafer, measuring a concentration of dopants of the second wafer, and obtaining the concentration of dopants of the objective thin film by subtracting the concentration of dopants of the first wafer from the concentration of dopants of the second wafer. Therefore, the concentration of dopants of the objective thin film may be measured without the use of a criterion wafer, thereby reducing measuring time. Also, the concentration of dopants of the objective thin film may be easily controlled, and therefore promptly corrected if necessary.

Abstract translation: 测量目标薄膜的掺杂剂浓度的方法包括测量第一晶片的掺杂剂的浓度，在第一晶片上形成目标薄膜以形成第二晶片，测量第二晶片的掺杂剂的浓度，以及 通过从第二晶片的掺杂剂的浓度减去第一晶片的掺杂剂的浓度来获得目标薄膜的掺杂剂的浓度。 因此，可以在不使用标准晶片的情况下测量目标薄膜的掺杂剂的浓度，从而减少测量时间。 此外，可以容易地控制目标薄膜的掺杂剂的浓度，因此如果需要，可以及时校正。

公开(公告)号：US20060082766A1

公开(公告)日：2006-04-20

申请号：US11253028

申请日：2005-10-17

Applicant: Joung-Soo Kim ,  Sang-Mun Chon ,  Chung-Sam Jun ,  Yu-Sin Yang

Inventor： Joung-Soo Kim ,  Sang-Mun Chon ,  Chung-Sam Jun ,  Yu-Sin Yang

IPC: G01N21/88

CPC classification number: G01N21/95607 ,  G01N21/21 ,  G01N21/47

Abstract: In a method of inspecting defects, a first actual region of an actual object is inspected based on a first characteristic parameter as an inspection condition. A point where an inspection region of the actual object is changed into a second actual region from the first actual region is determined. The second actual region is then inspected based on a second characteristic parameter as the inspection condition. The first and second parameters may include contrast of a light that is reflected from a reference object, intensity of the light, brightness of the light, a size of a minute structure on the reference object, etc. The characteristic parameters of each reference region on the reference object are set. Thus, the defects may be accurately classified so that a time and a cost for reviewing the defects may be markedly reduced.

Abstract translation: 在检查缺陷的方法中，基于作为检查条件的第一特征参数来检查实际物体的第一实际区域。 确定实际物体的检查区域从第一实际区域变为第二实际区域的点。 然后基于作为检查条件的第二特征参数检查第二实际区域。 第一和第二参数可以包括从参考对象反射的光的对比度，光的强度，光的亮度，参考对象上的微小结构的大小等。每个参考区域的特征参数在 参考对象被设置。 因此，可以将缺陷精确地分类，从而可以显着降低检查缺陷的时间和成本。

公开(公告)号：US20060022698A1

公开(公告)日：2006-02-02

申请号：US11175363

申请日：2005-07-07

Applicant: Tae-Min Eom ,  Chung-Sam Jun ,  Yu-Sin Yang ,  Yun-Jung Jee

Inventor： Tae-Min Eom ,  Chung-Sam Jun ,  Yu-Sin Yang ,  Yun-Jung Jee

IPC: G01R31/26

CPC classification number: G01R31/1263 ,  Y10T29/41

Abstract: A method of inspecting a leakage current of a dielectric layer on a substrate including a cell array region having a plurality of cell blocks including a patterned structure, the dielectric layer formed on the patterned structure, and a peripheral circuit region includes depositing a corona ion charge on a cell block selected from the plurality of cell blocks and measuring a variance of a surface voltage caused by a leakage current through the dielectric layer on the selected cell block. The variance of the surface voltage is compared with reference data to determine a leakage current characteristic of the dielectric layer.

Abstract translation: 一种在包括具有包括图案化结构的多个单元块，形成在图案化结构上的电介质层和外围电路区域的单元阵列区域的基板上检查介质层的漏电流的方法，包括沉积电晕离子电荷 在从所述多个单元块中选择的单元块上测量由所选择的单元块上的介电层的漏电流引起的表面电压的方差。 将表面电压的方差与参考数据进行比较，以确定电介质层的漏电流特性。

公开(公告)号：US20050151456A1

公开(公告)日：2005-07-14

申请号：US11028895

申请日：2005-01-04

Applicant: Young-Jee Yoon ,  Chung-Sam Jun ,  Sang-Mun Chon

Inventor： Young-Jee Yoon ,  Chung-Sam Jun ,  Sang-Mun Chon

IPC: G01R31/302 ,  G01R31/307 ,  H01J1/304 ,  H01J3/02 ,  H01J37/065 ,  H01J37/073 ,  H01L21/66 ,  H01L21/768 ,  H01J1/02 ,  H01J1/14

CPC classification number: B82Y10/00 ,  G01R31/307 ,  H01J1/3042 ,  H01J37/073 ,  H01J2201/30469 ,  H01J2237/0635 ,  H01J2237/2594

Abstract: Electron-beam generators have wide area and directional beam generation capability. The generators include anode and cathode electrodes, which are disposed in spaced-apart and opposing relationship relative to each other. A clustered carbon nanotube array is provided to support the wide area and directional beam generation. The clustered nanotube array extends between the anode and cathode electrodes. The nanotube array also has a wide area emission surface thereon, which extends opposite a primary surface of the anode electrode. The clustered nanotube array is configured so that nanotubes therein provide conductive channels for electrons, which pass from the cathode electrode to the anode electrode via the emission surface.

Abstract translation: 电子束发生器具有广泛的面积和定向束产生能力。 发生器包括阳极和阴极电极，它们彼此间隔开和相对地设置。 提供聚簇碳纳米管阵列以支持广域和定向束产生。 聚集的纳米管阵列在阳极和阴极之间延伸。 纳米管阵列还具有与阳极电极的主表面相对延伸的广泛的发射表面。 聚集的纳米管阵列被配置为使得其中的纳米管为电子提供导电通道，电子通过发射表面从阴极电极传递到阳极电极。

公开(公告)号：US20050026054A1

公开(公告)日：2005-02-03

申请号：US10909238

申请日：2004-07-30

Applicant: Yu-Sin Yang ,  Chung-Sam Jun ,  Sang-Mun Chon ,  Sun-Yong Choi

Inventor： Yu-Sin Yang ,  Chung-Sam Jun ,  Sang-Mun Chon ,  Sun-Yong Choi

IPC: H01L21/027 ,  G03F7/00 ,  G03F7/20

CPC classification number: G03F7/70608 ,  G03F7/70616

Abstract: An apparatus for monitoring a photolithography process includes a measurer and a data processor. The measurer measures an optical characteristic of a substrate. The data processor determines defectiveness of the substrate based on the optical the measurer.

Abstract translation: 用于监测光刻工艺的装置包括测量器和数据处理器。 测量器测量衬底的光学特性。 数据处理器基于光学测量器来确定衬底的缺陷。

公开(公告)号：US20050018182A1

公开(公告)日：2005-01-27

申请号：US10786137

申请日：2004-02-26

Applicant: Pil-Sik Hyun ,  Sun-Yong Choi ,  Sang-Kil Lee ,  Chung-Sam Jun ,  Sang-Min Kim

Inventor： Pil-Sik Hyun ,  Sun-Yong Choi ,  Sang-Kil Lee ,  Chung-Sam Jun ,  Sang-Min Kim

IPC: H01L21/66 ,  G01N21/95 ,  G01N21/00

CPC classification number: G01N21/956 ,  G01N21/9501

Abstract: A method for classifying defects of an object includes irradiating lights having different wavelengths onto the object to create an inspection spot on the object, collecting scattered lights generated by the irradiated lights scattering from the inspection spot, and classifying defects of the object by type of defect by analyzing the scattered lights. An apparatus for classifying defects of an object includes light creating means emitting lights having different wavelengths to create an inspection spot on the object, and a detecting member for collecting scattered lights that are created from the lights scattering from the inspection spot, wherein the scattered lights are analyzed and classified in accordance with defects positioned on the inspection spot of the object.

Abstract translation: 用于对物体的缺陷进行分类的方法包括将不同波长的光照射到物体上以在物体上产生检查点，收集由检查点散射的照射光产生的散射光，并根据缺陷类型对物体的缺陷进行分类 通过分析散射光。 用于对物体的缺陷进行分类的装置包括：发光装置，其发射具有不同波长的光，以在物体上产生检查点;以及检测部件，用于收集从检查点散射的光产生的散射光，其中散射光 根据位于物体检查点的缺陷进行分析和分类。

公开(公告)号：US06528333B1

公开(公告)日：2003-03-04

申请号：US09584671

申请日：2000-06-01

Applicant: Chung-sam Jun ,  Sang-mun Chon ,  Sang-bong Choi ,  Hyung-suk Cho ,  Pil-sik Hyun ,  Kyu-hong Lim ,  Byung-am Lee

Inventor： Chung-sam Jun ,  Sang-mun Chon ,  Sang-bong Choi ,  Hyung-suk Cho ,  Pil-sik Hyun ,  Kyu-hong Lim ,  Byung-am Lee

IPC: H01L2166

CPC classification number: G01N21/21

Abstract: A method and device detect for the presence of defects, namely micro-scratches, in the surface of a wafer. Light is projected onto a medium at the surface of the wafer, at an angle at which light is not reflected by another layer that may be located under the medium. Light reflected by the surface of the wafer is converted into an electrical signal but any light scattered by the surface is excluded as much as possible from contributing to the formation of the signal. The electric signal corresponds to the intensity of the light reflected from the surface of the wafer. As the light is scanned across the wafer, the values of the electric signal are compared to yield a determination of whether defects are present in the medium. Because the light projected onto the surface of the wafer will be scattered by defects such as micro-scratches, the wafer can be successfully monitored for the existence of such micro-scratches. In particular, defects including micro-scratches formed in the medium can be detected regardless of the structure underlying the medium, such as a pattern layer.