公开(公告)号：US20060180845A1

公开(公告)日：2006-08-17

申请号：US11350867

申请日：2006-02-10

申请人： Young-Kwan Cha ,  In-Kyeong Yoo ,  Soo-Hwan Jeong

发明人： Young-Kwan Cha ,  In-Kyeong Yoo ,  Soo-Hwan Jeong

IPC分类号： H01L21/8238 ,  H01L29/76 ,  H01L21/326

CPC分类号： H01L29/42332 ,  H01L29/40114 ,  H01L29/40117 ,  H01L29/7882

摘要： A memory device with a silicon rich oxide layer and a method of manufacturing the same are provided. The memory device with a silicon rich oxide layer may include a semiconductor substrate, source/drain regions formed on the semiconductor substrate, and a gate structure formed on the semiconductor substrate. The gate structure may contact with the source/drain regions and may include a silicon oxide layer with a silicon content greater than that of a silicon oxide layer (SiO2).

摘要翻译： 提供了具有富硅氧化物层的存储器件及其制造方法。 具有富硅氧化物层的存储器件可以包括半导体衬底，形成在半导体衬底上的源极/漏极区域和形成在半导体衬底上的栅极结构。 栅极结构可以与源极/漏极区域接触，并且可以包括具有大于氧化硅层（SiO 2）的硅含量的硅氧化物层。

公开(公告)号：US06998162B2

公开(公告)日：2006-02-14

申请号：US10441122

申请日：2003-05-20

申请人： In-kyeong Yoo ,  Soo-hwan Jeong ,  In-sook Kim

发明人： In-kyeong Yoo ,  Soo-hwan Jeong ,  In-sook Kim

IPC分类号： B32B3/02

CPC分类号： G11B7/26 ,  G11B7/24035 ,  G11B7/241 ,  Y10T428/21

摘要： An optical recording medium having a phase transition material film and a method of manufacturing the optical recording medium are provided. In the method, first, a phase transition material film, a sacrificial film, and a metal film are sequentially stacked on a substrate. Next, the metal film is anodized to form a metal oxide film having a plurality of holes, and portions of the sacrificial film exposed through the holes are anode-oxidized to form oxide films. Thereafter, the phase transition material film is patterned by removing the metal oxide film and by etching the sacrificial film and the phase transition material film using the oxide films as a mask. Then, the oxide films are removed from the sacrificial film, and an upper insulation film, a reflection film, and a protection film are deposited on the upper surface of the patterned phase transition material film. The optical recording medium can be simply manufactured by using a self-alignment method and can have a highly-integrated large-capacity memory.

摘要翻译： 提供具有相变材料膜的光记录介质和制造光记录介质的方法。 在该方法中，首先，将相变材料膜，牺牲膜和金属膜依次层叠在基板上。 接下来，金属膜被阳极化以形成具有多个孔的金属氧化物膜，并且通过孔露出的部分牺牲膜被阳极氧化以形成氧化物膜。 此后，通过去除金属氧化物膜并且通过使用氧化膜作为掩模蚀刻牺牲膜和相变材料膜来对相变材料膜进行图案化。 然后，从牺牲膜上除去氧化物膜，并且在图案化的相变材料膜的上表面上沉积上绝缘膜，反射膜和保护膜。 光记录介质可以通过使用自对准方法简单地制造，并且可以具有高度集成的大容量存储器。

公开(公告)号：US20050247921A1

公开(公告)日：2005-11-10

申请号：US11116332

申请日：2005-04-28

申请人： Myoung-jae Lee ,  In-kyeong Yoo ,  Sun-ae Seo ,  Dong-seok Suh ,  David Seo ,  Sang-hun Jeon

发明人： Myoung-jae Lee ,  In-kyeong Yoo ,  Sun-ae Seo ,  Dong-seok Suh ,  David Seo ,  Sang-hun Jeon

IPC分类号： H01L27/10 ,  H01L27/115 ,  H01L27/24 ,  H01L29/02 ,  H01L45/00

CPC分类号： G11C13/0004 ,  G11C2213/79 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146

摘要： A memory device using a multi-layer with a graded resistance change is provided. The memory device includes: a lower electrode; a data storage layer being located on the lower electrode and having the graded resistance change; and an upper electrode being located on the data storage layer.

摘要翻译： 提供了使用具有分级电阻变化的多层的存储器件。 存储器件包括：下电极; 数据存储层位于下电极上并具有分级电阻变化; 并且上电极位于数据存储层上。

公开(公告)号：US06867999B2

公开(公告)日：2005-03-15

申请号：US10776233

申请日：2004-02-12

申请人： In-kyeong Yoo ,  Byong-man Kim

发明人： In-kyeong Yoo ,  Byong-man Kim

IPC分类号： G11C11/412 ,  G11C16/04 ,  H01L21/28 ,  H01L21/336 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/423 ,  H01L29/788 ,  H01L29/792 ,  G11C7/00

CPC分类号： B82Y10/00 ,  G11C2216/08 ,  H01L21/28273 ,  H01L29/42332 ,  H01L29/66825 ,  H01L29/7881

摘要： A memory device including a single transistor having functions of RAM and ROM and methods for operating and manufacturing the same are provided. The memory device includes a single transistor formed on a substrate. The transistor may be a memory transistor having a gate with a nonvolatile memory element, or the nonvolatile memory element is provided between the transistor and the substrate.

摘要翻译： 提供了包括具有RAM和ROM功能的单个晶体管的存储器件及其操作和制造方法。 存储器件包括形成在衬底上的单个晶体管。 晶体管可以是具有带非易失性存储元件的栅极的存储晶体管，或者在晶体管和衬底之间提供非易失性存储元件。

公开(公告)号：US06815681B2

公开(公告)日：2004-11-09

申请号：US10465600

申请日：2003-06-20

申请人： Dong-wook Kim ,  In-kyeong Yoo ,  Chang-wook Moon ,  In-sook Kim

发明人： Dong-wook Kim ,  In-kyeong Yoo ,  Chang-wook Moon ,  In-sook Kim

IPC分类号： H01J3700

CPC分类号： H01J37/3175 ,  H01J2237/31781

摘要： An electron beam lithography apparatus, which uses a patterned emitter, includes a pyroelectric plate emitter that emits electrons using a patterned metal thin layer formed on the pyroelectric plate as a mask. When the emitter is heated, electrons are emitted from portions of the emitter covered with a patterned dielectric layer, and not from portions of the emitter covered with a patterned metal thin layer, and a pattern of the emitter is thereby projected onto a substrate. To prevent dispersion of emitted electron beams, the electron beams may be controlled by a permanent magnet, an electro-magnet, or a deflector unit. A one-to-one or x-to-one projection of a desired pattern on the substrate is thereby obtained.

摘要翻译： 使用图案化发射器的电子束光刻设备包括使用形成在热电板上的图案化金属薄层作为掩模发射电子的热电板发射器。 当发射极被加热时，电子从被图案化电介质层覆盖的发射体的部分发射，而不是由图案化的金属薄层覆盖的发射体的部分发射，并且因此将发射极的图案投影到衬底上。 为了防止发射的电子束的分散，电子束可以由永磁体，电磁体或偏转器单元来控制。 从而获得在衬底上所需图案的一对一或一对一投影。

公开(公告)号：US06784438B2

公开(公告)日：2004-08-31

申请号：US10688953

申请日：2003-10-21

申请人： In-kyeong Yoo ,  Chang-wook Moon ,  Dong-wook Kim

发明人： In-kyeong Yoo ,  Chang-wook Moon ,  Dong-wook Kim

IPC分类号： H01J37073

CPC分类号： B82Y30/00 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3175 ,  H01J2237/06358 ,  H01J2237/31781

摘要： An electron projection lithography apparatus using secondary electrons includes a secondary electron emitter which is spaced apart from a substrate holder by a first predetermined interval and has a patterned mask formed on a surface thereof to face the substrate holder, a primary electron emitter which is spaced apart by a second predetermined interval from the secondary electron emitter in a direction opposite to the substrate holder and emits primary electrons to the secondary electron emitter, a second power supply which applies a second predetermined voltage between the substrate holder and the secondary electron emitter, a first power supply which applies a first predetermined voltage between the secondary electron emitter and the primary electron emitter, and a magnetic field generator which controls a path of secondary electrons emitted from the secondary electron emitter.

公开(公告)号：US06740895B2

公开(公告)日：2004-05-25

申请号：US09865607

申请日：2001-05-29

申请人： In-Kyeong Yoo

发明人： In-Kyeong Yoo

IPC分类号： H01J3700

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3175 ,  H01J2237/31777

摘要： A method and apparatus for emission lithography using a patterned emitter wherein, in the apparatus for emission lithography, a pyroelectric emitter or a ferroelectric emitter is patterned using a mask and it is then heated. Upon heating, electrons are not emitted from that part of the emitter covered by the mask, but are emitted from the exposed part of the emitter not covered by the mask so that the shape of the emitter pattern is projected onto the substrate. To prevent dispersion of emitted electron beams, which are desired to be parallel, the electron beams are controlled using a magnet, a direct current magnetic field generator or a deflection system, thereby achieving an exact one-to-one projection or an exact x-to-one projection of the desired pattern etched on the substrate.

摘要翻译： 使用图案化发射器的发射光刻的方法和装置，其中在用于发射光刻的装置中，使用掩模对热电发射体或铁电发射体进行图案化，然后将其加热。 在加热时，电子不会从掩模覆盖的发射体的那部分发射，而是从未被掩模覆盖的发射体的暴露部分发射，使得发射极图案的形状投影到基板上。 为了防止所期望的平行的发射电子束的分散，使用磁体，直流磁场发生器或偏转系统来控制电子束，从而实现精确的一对一投影或精确的x- 在基板上刻蚀所需图案的一对一投影。

公开(公告)号：US06476402B1

公开(公告)日：2002-11-05

申请号：US09619526

申请日：2000-07-19

申请人： In-Kyeong Yoo

发明人： In-Kyeong Yoo

IPC分类号： H01J3700

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3175 ,  H01J2237/31777

摘要： A method and an apparatus for pyroelectric lithography using a patterned emitter is provided. In the apparatus for pyroelectric lithography, a pyroelectric emitter or a ferroelectric emitter is patterned using a mask and it is then heated. Upon heating, electrons are not emitted from that part of the emitter covered by the mask, but are emitted from the exposed part of the emitter not covered by the mask so that the shape of the emitter pattern is projected onto the substrate. To prevent dispersion of emitted electron beams, which are desired to be parallel, the electron beams are controlled using a magnet or a projection system, thereby achieving exact a one-to-one projection or a x-to-one projection of the desired pattern etched on the substrate.

摘要翻译： 提供了一种使用图案化发射器进行热电光刻的方法和装置。 在用于热电光刻的装置中，使用掩模对热电发射体或铁电发射体进行图案化，然后将其加热。 在加热时，电子不会从掩模覆盖的发射体的那部分发射，而是从未被掩模覆盖的发射体的暴露部分发射，使得发射极图案的形状投影到基板上。 为了防止希望平行的发射电子束的分散，使用磁体或投影系统控制电子束，从而精确地实现所需图案的一对一投影或一对一投影 蚀刻在基板上。

公开(公告)号：US6077716A

公开(公告)日：2000-06-20

申请号：US368580

申请日：1999-08-05

申请人： In-kyeong Yoo

发明人： In-kyeong Yoo

IPC分类号： H01L27/108 ,  G11C11/56 ,  H01L21/8246 ,  H01L27/115 ,  H01L21/00

CPC分类号： H01L27/11502 ,  G11C11/5657 ,  H01L27/11585 ,  H01L27/1159

摘要： The present invention relates to a matrix type multiple numeration system ferroelectric random access memory using a leakage current of dielectric, which is non-volatile and with which a multiple numeration system is realized, and a method for manufacturing the same. In the memory according to the present invention, the unit cells formed of the dielectric and ferroelectric capacitors are arranged in a matrix, the lower electrodes are connected to bit lines, and the upper electrodes are connected to word lines. Thus, a transistor for selecting cells is included for each word line and each bit line. Therefore, it is possible to heighten the integration degree, since the memory cells are each formed of only a dielectric and a ferroelectric capacitor, and to improve productivity since manufacturing processes are simple.

摘要翻译： 本发明涉及使用非易失性的电介质的漏电流并实现多计数系统的矩阵式多计数系统铁电随机存取存储器及其制造方法。 在根据本发明的存储器中，由电介质和铁电电容器形成的单电池以矩阵形式布置，下电极连接到位线，并且上电极连接到字线。 因此，用于选择单元的晶体管包括每个字线和每个位线。 因此，由于存储单元仅由电介质和铁电体电容器构成，所以可以提高积分度，并且由于制造工艺简单，所以提高了生产率。

公开(公告)号：US5986298A

公开(公告)日：1999-11-16

申请号：US961883

申请日：1997-10-31

申请人： In-kyeong Yoo

发明人： In-kyeong Yoo

IPC分类号： H01L27/108 ,  G11C11/56 ,  H01L21/8246 ,  H01L27/115 ,  H01L29/76

CPC分类号： H01L27/11502 ,  G11C11/5657 ,  H01L27/11585 ,  H01L27/1159

摘要： The present invention relates to a matrix type multiple numeration system ferroelectric random access memory using a leakage current of dielectric, which is non-volatile and with which a multiple numeration system is realized, and a method for manufacturing the same. In the memory according to the present invention, the unit cells formed of the dielectric and ferroelectric capacitors are arranged in a matrix, the lower electrodes are connected to bit lines, and the upper electrodes are connected to word lines. Thus, a transistor for selecting cells is included for each word line and each bit line. Therefore, it is possible to heighten the integration degree, since the memory cells are each formed of only a dielectric and a ferroelectric capacitor, and to improve productivity since manufacturing processes are simple.