Abstract:
A memory device of the current invention includes a memory layer having nanochannels sandwiched between an upper electrode and a lower electrode, in which the memory layer is made of an organic-inorganic complex for use in formation of nanopores, and has metal nanoparticles or metal ions fed into the nanopores. Therefore, the memory device has excellent processability, high reproducibility, and uniform performance.
Abstract:
A multi-functional cyclic silicate compound, a siloxane-based polymer prepared from the silicate compound and a process of producing an insulating film using the siloxane-based polymer. The silicate compound of the present invention is highly compatible with conventional pore-generating substances and hardly hygroscopic, so it is useful for the preparation of a siloxane-based polymer suitable to a SOG process. Furthermore, a film produced by the use of such siloxane-based polymer is excellent in mechanical properties, thermal stability and crack resistance and enhanced in insulating properties by virtue of its low hygroscopicity. Therefore, in the field of semiconductor production, this film is of great use as an insulating film.
Abstract:
A dendrimer according to example embodiments may include a triphenylamine core, wherein a conjugated dendron having no heteroatoms is coupled to the triphenylamine core. An organic memory device according to example embodiments may include an organic active layer between a first electrode and a second electrode, wherein the organic active layer includes the dendrimer according to example embodiments. A barrier layer may be provided between the first and second electrodes. A method of manufacturing the organic memory device according to example embodiments may include forming an organic active layer between a first electrode and a second electrode, the organic active layer including the dendrimer according to example embodiments.
Abstract:
Provided is a method for providing a personalization service in a ubiquitous environment and an intelligent gadget thereof. The intelligent gadget includes: a gadget service block for collecting and processing data to provide a personalization service; and a gadget interface block for forming a gadget network between gadgets and providing a cooperating service based on the collected and processed data.
Abstract:
A liquid crystal display includes a light guide plate guiding incident light, a first point light source assembly including first point light source elements providing the light to the light guide plate and a first support substrate having the first point light source elements, the first point light source assembly being disposed at one side of the light guide plate, a second point light source assembly including second point light source elements providing the light to the light guide plate and a second support substrate having the second point light source elements, the second point light source assembly being disposed at the other side of the light guide plate, a liquid crystal panel assembly disposed on the light guide plate and displaying image information, and a lower container accommodating the light guide plate, first and second point light source assemblies, and liquid crystal panel assembly, wherein the first support substrate is larger in area than the second support substrate.
Abstract:
Disclosed herein are ferrocene-containing polymers in which ferrocene is conjugated to the backbone of conductive conjugated polymers. Further disclosed are organic memory devices comprising the ferrocene-containing polymers. Because the organic memory devices possess the advantages of decreased switching time, decreased operating voltage, decreased fabrication costs and increased reliability, they may be used as highly integrated large-capacity memory devices.
Abstract:
An image sensor an image sensor includes an image sensing element which converts incident light into an analogue signal, a voltage generator which includes a variable resistor circuit and which generates a ramping voltage, where a slope of the ramping voltage is variable and corresponds a resistance value of the variable resistor circuit, a converter which converts a voltage of the analogue signal into a digital signal using the ramping voltage generated by the voltage generator, and a controller which controls the resistance value of the variable resistance circuit.
Abstract:
The present invention provides a composition for preparing porous dielectric thin films containing pore-generating material, said composition comprising gemini detergent, and/or a quaternary alkyl ammonium salt, a thermo-stable organic or inorganic matrix precursor, and solvent for dissolving the two solid components. There is also provided an interlayer insulating film having good mechanical properties such as hardness, modulus and hydroscopicity, which is required for semiconductor devices.
Abstract:
A method for manufacturing molten iron including the steps of producing reducing material of mixed hot fine direct reduced iron and calcined additives, the reducing material being produced from multiple fluidized beds; charging the reducing material to at least one pair of roller presses; roll pressing the reducing material through the one pair of roller presses to produce continuous compacted material having protrusions formed on pressed surfaces; crushing the compacted material; charging the crushed compacted material to a coal packed bed; and supplying oxygen to the coal packed bed to manufacture molten iron, wherein in the producing compacted material, the compacted material is formed such that acute and obtuse angles are formed between a center line formed along a length of a cross section that is cut along a lengthwise direction perpendicular to an axial direction of the roller presses and connecting lines that connect grooves closest to each other across the cross sectional area. An apparatus for manufacturing molten iron performs the inventive method for manufacturing molten iron. The processes involved in manufacturing molten iron using the invention are convenient, efficient, improve productivity, and allow for more flexibility with respect to equipment operation during the manufacture of compacted material.
Abstract:
The present invention discloses a transistor array and a layout method, the array including a plurality of first LSB transistors arranged along diagonal directions of a central portion of a first quadrant of an array including a plurality of rows and a plurality of columns; a plurality of first MSB transistors arranged along diagonal directions above and below the plurality of first LSB transistors, respectively; a plurality of second LSB transistors and a plurality of second MSB transistors arranged on a second quadrant of the array to be symmetrical in a Y-axis direction to the plurality of first LSB transistors and the plurality of first MSB transistors; a plurality of third LSB transistors and a plurality of third MSB transistors arranged on a third quadrant of the array to be symmetrical in an X-axis direction to the plurality of first LSB transistors and the plurality of first MSB transistors; and a plurality of fourth LSB transistors and a plurality of fourth MSB transistors arranged on a fourth quadrant of the array to be symmetrical in a Y-axis direction to the plurality of third LSB transistors and the plurality of third MSB transistors, such that the transitor array can minimize the effects of temperature distribution and process variation.