SUBSTRATE TREATMENT APPARATUS AND SUBSTRATE TREATMENT METHOD

    公开(公告)号:US20250014867A1

    公开(公告)日:2025-01-09

    申请号:US18710931

    申请日:2022-10-28

    Applicant: PSK INC.

    Abstract: The present invention provides an apparatus for treating a substrate. The apparatus for treating a substrate may comprise: a process treatment part which provides a treatment space where a substrate is treated; and a plasma source which generates plasma from process gas, wherein: the plasma source includes an antenna which has a coil wound in multiple turns, and a power application unit which applies high-frequency power to the coil; a first ground line is connected to one end of the coil and a second ground line is connected to the other end of the coil; and the power application unit is connected to the coil so as to apply high-frequency power directly to the coil at a position between one end and the other end of the coil.

    UPPER ELECTRODE UNIT AND SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME

    公开(公告)号:US20240297023A1

    公开(公告)日:2024-09-05

    申请号:US18026528

    申请日:2021-12-02

    Applicant: PSK INC.

    Abstract: A substrate processing apparatus is provided. The substrate processing apparatus includes a housing having an interior space, a lower electrode unit supporting a substrate in the interior space, an upper electrode unit facing the lower electrode unit, and a gas supply unit supplying a process gas to the interior space, wherein the upper electrode unit includes a dielectric plate facing an upper surface of the substrate supported by the lower electrode unit, a support body supporting the dielectric plate, wherein the support body and the dielectric plate are combined with each other to form a buffer space and the gas supply unit supplies the process gas to the interior space via the buffer space, and a baffle ring disposed on a flow path of the process gas flowing from the buffer space to the interior space.

    LOAD LOCK CHAMBER AND APPARATUS FOR TREATING SUBSTRATE

    公开(公告)号:US20240234184A9

    公开(公告)日:2024-07-11

    申请号:US18278678

    申请日:2021-11-02

    Applicant: PSK INC.

    CPC classification number: H01L21/67201 H01L21/67069 H01L21/67253 H01L21/681

    Abstract: Provided is an apparatus for treating a substrate, the apparatus including: an equipment front end module including a load port and a transfer frame; a process chamber for performing a process treatment on a substrate; and a load lock chamber disposed in a transfer path of the substrate transferred between the transfer frame and the process chamber, in which the load lock chamber includes: a housing having an interior space; a compartmentalizing plate for compartmentalizing the interior space into a first space, and a second space independent of the first space; and an aligning unit for aligning a notch of the substrate provided in any one of the first space and the second space.

    APPARATUS FOR TREATING SUBSTRATE
    65.
    发明公开

    公开(公告)号:US20240071783A1

    公开(公告)日:2024-02-29

    申请号:US18364626

    申请日:2023-08-03

    Applicant: PSK INC.

    Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a housing having a treating space; a support unit configured to support a substrate at the treating space; and a gas supply unit configured to supply a gas which is excited to a plasma to the treating space, and wherein the support unit includes: a chuck supporting a center region of the substrate; and an edge electrode formed in a ring shape, and wherein the edge electrode includes: a body portion surrounding the chuck at an outer side of the chuck; and a protrusion portion formed protruding to an outer side of the body portion, and a hole is formed at the protrusion portion penetrating the protrusion portion and which exhausts an atmosphere of the treating space.

    SUBSTRATE PROCESSING APPARATUS
    66.
    发明公开

    公开(公告)号:US20240055234A1

    公开(公告)日:2024-02-15

    申请号:US18270804

    申请日:2021-11-25

    Applicant: PSK INC.

    CPC classification number: H01J37/32513 H01J2237/2006

    Abstract: Disclosed is an apparatus for processing a substrate, the apparatus including: a housing providing a processing space therein; support unit disposed within the housing and supporting a substrate; and a plasma generating unit provided above the housing, in which the plasma supplying unit includes: a plasma chamber with a discharge space formed inside; a diffusion member provided between the plasma chamber and the housing, and diffusing plasma; a plasma source for generating plasma in the discharge space from process gas; and a sealing member provided between a lower flange of the plasma chamber and an upper flange of the diffusion member, and the sealing member includes: an inner sealing member inserted into a mounting groove formed in an upper surface of the upper flange; and an outer sealing member inserted into a space formed by combination of the upper flange and the lower flange, and positioned at a further outward side from the discharge space than the inner sealing member.

    SUPPORT UNIT, AND APPARATUS FOR TREATING SUBSTRATE WITH THE SAME

    公开(公告)号:US20230145538A1

    公开(公告)日:2023-05-11

    申请号:US17679900

    申请日:2022-02-24

    Applicant: PSK INC.

    Abstract: A substrate treating apparatus includes a housing, treating space and support unit to support a substrate, dielectric plate, gas supply unit, and plasma source to generate a plasma and including a top edge electrode above the edge region supported by the support unit and bottom edge electrode below the edge region supported by the support unit, which includes a support plate having an inner space and vacuum hole that communicates with the inner space and sucking the substrate on the top surface. A lift pin assembly can transfer the substrate between an outside transfer unit and the support plate. A decompression unit can apply negative pressure to the inner space. The lift pin assembly includes a base plate and through hole penetrating the base plate to provide negative pressure in a region under the base plate to a region over the base plate. Lift pins protrude from the base plate and support a bottom substrate surface. A driver can lift/lower the base plate within the inner space.

    ARC DETECTION METHOD AND ARC DETECTION SYSTEM

    公开(公告)号:US20220268828A1

    公开(公告)日:2022-08-25

    申请号:US17206379

    申请日:2021-03-19

    Applicant: PSK INC.

    Abstract: Disclosed herein is a method of detecting an arc generated in a semiconductor device. The method may comprise: performing a processing process for a substrate processing and collecting data according to the processing process; separating the collected data by setting sections; obtaining an average value and a standard deviation of the data separated for each section; and setting an upper limit and a lower limit for detecting the arc using the average value and the standard deviation.

    SUPPORT UNIT, APPARATUS FOR TREATING SUBSTRATE, AND METHOD FOR TREATING SUBSTRATE

    公开(公告)号:US20220181122A1

    公开(公告)日:2022-06-09

    申请号:US17510617

    申请日:2021-10-26

    Applicant: PSK INC.

    Abstract: The present invention provides a support unit included in an apparatus for treating a substrate by using plasma. The support unit may include: a chuck configured to support a lower surface of the substrate; a moving plate provided to surround the chuck when viewed from above; and a lifting member configured to change an exposed area of an edge region of the substrate supported by the chuck for the treating space by relatively moving the moving plate in an upper or lower direction with respect to the chuck.

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