公开(公告)号：US20100022100A1

公开(公告)日：2010-01-28

申请号：US12573794

申请日：2009-10-05

Applicant: Ping Xu ,  Christopher Dennis Bencher

Inventor： Ping Xu ,  Christopher Dennis Bencher

IPC: H01L21/31

CPC classification number: H01L21/76829 ,  C23C16/30 ,  C23C16/45523 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/3122 ,  H01L21/31633 ,  H01L21/76835

Abstract: A method is provided for processing a substrate surface by delivering a first gas mixture comprising a first organosilicon compound, a first oxidizing gas, and one or more hydrocarbon compounds into a chamber at deposition conditions sufficient to deposit a first low dielectric constant film on the substrate surface. A second gas mixture having a second organosilicon compound and a second oxidizing gas is delivered into the chamber at deposition conditions sufficient to deposit a second low dielectric constant film on the first low dielectric constant film. The flow rate of the second oxidizing gas into the chamber is increased, and the flow rate of the second organosilicon compound into the chamber is decreased to deposit an oxide rich cap on the second low dielectric constant film.

Abstract translation: 提供了一种通过将包含第一有机硅化合物，第一氧化气体和一种或多种烃化合物的第一气体混合物输送到室中的方法来处理衬底表面，该沉积条件足以在衬底上沉积第一低介电常数膜 表面。 具有第二有机硅化合物和第二氧化气体的第二气体混合物在足以在第一低介电常数膜上沉积第二低介电常数膜的沉积条件下被输送到室中。 进入室内的第二氧化气体的流量增加，第二有机硅化合物进入室的流量减少，从而在第二低介电常数膜上沉积氧化物富集盖。

公开(公告)号：US07488781B2

公开(公告)日：2009-02-10

申请号：US11136853

申请日：2005-05-25

Applicant: Ping Xu ,  Jack Hegenbarth ,  Xin Kang Chen ,  Jian Hou

Inventor： Ping Xu ,  Jack Hegenbarth ,  Xin Kang Chen ,  Jian Hou

IPC: C08F8/00

CPC classification number: C08J3/24 ,  C08F6/16 ,  C08F6/22 ,  C08F214/18 ,  C08J2327/18 ,  Y10T428/139 ,  C08L27/12

Abstract: Crosslinkable perfluoroelastomer compositions having low metal content and low compression set when crosslinked, and processes for producing the same, are provided. Compositions comprising terpolymers of TFE, PAVE, and CNVE having a metal content of less than 3000 ppb may be formed into high purity transparent perfluoroelastomer parts.

Abstract translation: 提供了交联时金属含量低，压缩永久变形的交联全氟弹性体组合物及其制造方法。 可以将包含金属含量小于3000ppb的TFE，PAVE和CNVE的三元共聚物的组合物形成为高纯度透明全氟弹性体部件。

公开(公告)号：US20070222517A1

公开(公告)日：2007-09-27

申请号：US11703546

申请日：2007-02-05

Applicant: Honglei Wu ,  Yong-Ping Xu

Inventor： Honglei Wu ,  Yong-Ping Xu

IPC: H03F3/45

CPC classification number: H03F3/45201 ,  H03F1/26 ,  H03F3/45659 ,  H03F3/45672 ,  H03F2200/372 ,  H03F2200/513 ,  H03F2203/45418 ,  H03F2203/45454

Abstract: Briefly, one or more embodiments of an amplifier, including example applications, are described.

Abstract translation: 简而言之，描述了包括示例应用的放大器的一个或多个实施例。

公开(公告)号：US20060270780A1

公开(公告)日：2006-11-30

申请号：US11136744

申请日：2005-05-25

Applicant: Ping Xu ,  Jack Hegenbarth

Inventor： Ping Xu ,  Jack Hegenbarth

IPC: C09D5/02

CPC classification number: C08L29/10 ,  C08K3/36 ,  C08L27/12 ,  C08L27/18 ,  C08L33/22 ,  C08L2205/02 ,  C08L2666/04

Abstract: High purity perfluoroelastomer composites and processes for producing the same are provided. High purity composites may be formed from compositions comprising a crosslinkable fluoroelastomer terpolymer of TFE, PAVE, and CNVE, and functionalized PTFE, which may be crosslinked to form crosslinked composites having low metal content and low compression set. Emulsion mixtures for forming the high purity composites are also provided.

Abstract translation: 提供了高纯度全氟弹性体复合材料及其制备方法。 高纯度复合材料可以由包含TFE，PAVE和CNVE的交联性含氟弹性体三元共聚物和官能化PTFE的组合物形成，其可以交联以形成具有低金属含量和低压缩永久变形的交联复合材料。 还提供了用于形成高纯度复合材料的乳液混合物。

公开(公告)号：US07001850B2

公开(公告)日：2006-02-21

申请号：US10894872

申请日：2004-07-20

Applicant: Srinivas D Nemani ,  Li-Qun Xia ,  Dian Sugiarto ,  Ellie Yieh ,  Ping Xu ,  Francimar Campana-Schmitt ,  Jia Lee

Inventor： Srinivas D Nemani ,  Li-Qun Xia ,  Dian Sugiarto ,  Ellie Yieh ,  Ping Xu ,  Francimar Campana-Schmitt ,  Jia Lee

IPC: H01L21/31 ,  H01L21/469

CPC classification number: H01L21/76834 ,  C23C16/325 ,  H01L21/0332 ,  H01L21/3081 ,  H01L21/31144 ,  H01L21/314 ,  H01L21/3148 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76829 ,  Y10S438/931

Abstract: A method of forming a silicon carbide layer for use in integrated circuit fabrication processes is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a dopant in the presence of an electric field. The as-deposited silicon carbide layer has a compressibility that varies as a function of the amount of dopant present in the gas mixture during later formation.

Abstract translation: 提供了一种形成用于集成电路制造工艺中的碳化硅层的方法。 碳化硅层通过在电场存在下使包含硅源，碳源和掺杂剂的气体混合物反应而形成。 沉积的碳化硅层具有随后期形成期间作为气体混合物中存在的掺杂剂量的函数而变化的压缩性。

公开(公告)号：US20050287527A1

公开(公告)日：2005-12-29

申请号：US10500878

申请日：2003-01-10

Applicant: Feng Ni ,  Zhengding Su ,  Ping Xu ,  Dmitri Tolkatchev ,  Michael Osborne ,  Anatol Koutychenko

Inventor： Feng Ni ,  Zhengding Su ,  Ping Xu ,  Dmitri Tolkatchev ,  Michael Osborne ,  Anatol Koutychenko

IPC: C12Q1/68 ,  G01N24/08 ,  G01N33/00 ,  G01N33/542 ,  G01R33/46 ,  G01R33/465

CPC classification number: G01N33/542 ,  G01N24/08 ,  G01R33/4625 ,  G01R33/465

Abstract: There is provided a method of quantitatively ranking transient ligand binding to target biomolecules by means of NMR relaxation dispersion profiles. The present invention also relates to a method to identify ligand site obeying two-state and more complex binding behavior in a transient complex of a ligand with a target molecule, still with the use of NMR. There is also provided an efficient method to quantitate fast dissociation rates of ligands containing at least one magnetic nuclei by performing NMR relaxation dispersion experiments at different protein concentrations, enabling the evaluation of populations and exchange rates, and extending the practical applicability of the NMR relaxation dispersion experiments.

Abstract translation: 提供了一种通过NMR松弛分散谱定量分析瞬时配体与靶生物分子结合的方法。 本发明还涉及在使用NMR的情况下，鉴定配体与靶分子的瞬时复合物中符合双态和更复杂结合行为的配体位点的方法。 还提供了通过在不同蛋白质浓度下进行NMR松弛分散实验来定量含有至少一个磁核的配体的快速解离速率的有效方法，使得能够评价群体和交换速率，并且扩展了NMR松弛分散体的实际适用性 实验。

公开(公告)号：US06867957B1

公开(公告)日：2005-03-15

申请号：US10065364

申请日：2002-10-09

Applicant: Paul C. F. Tong ,  Ming-Dou Ker ,  Ping Ping Xu

Inventor： Paul C. F. Tong ,  Ming-Dou Ker ,  Ping Ping Xu

IPC: H01L27/02 ,  H02H9/00

CPC classification number: H01L27/0262 ,  H01L27/0266

Abstract: Transistors with very thin gate oxides are protected against oxide failure by cascading two or more transistors in series between an output pad and ground. The intermediate source/drain node between the two cascaded transistors is usually floating during an ESD test, delaying snapback turn-on of a parasitic lateral NPN transistor. This intermediate node is used to drive the gate of an upper trigger transistor. A lower trigger transistor has a gate node that is charged by the ESD pulse on the pad through a coupling capacitor. When the coupled ESD pulse turns on the trigger transistors, the trigger transistors turn on a silicon-controlled rectifier (SCR) that is integrated with the trigger transistors.

Abstract translation: 具有非常薄的栅极氧化物的晶体管通过在输出焊盘和接地之间串联两个或更多个晶体管来保护免受氧化物故障。 两个级联晶体管之间的中间源极/漏极节点通常在ESD测试期间浮置，延迟了寄生侧面NPN晶体管的快速恢复导通。 该中间节点用于驱动上触发晶体管的栅极。 下触发晶体管具有通过耦合电容器通过焊盘上的ESD脉冲对其进行充电的栅极节点。 当耦合的ESD脉冲接通触发晶体管时，触发晶体管导通与触发晶体管集成的可控硅整流器（SCR）。

公开(公告)号：US06768435B2

公开(公告)日：2004-07-27

申请号：US10188071

申请日：2002-07-03

Applicant: Yong-Ping Xu

Inventor： Yong-Ping Xu

IPC: H03M300

CPC classification number: H03M3/404 ,  H03H7/01 ,  H03M3/344 ,  H03M3/348

Abstract: A bandpass sigma-delta modulator using acoustic resonators or micro-mechanical resonators. In order to improve resolution at high frequencies, acoustic resonators or micro-mechanical resonators are utilized in a sigma-delta modulator instead of electronic resonators. The quantized output is fed back using a pair of D/A converters to an input summation device. In fourth order devices, the feed back is to two summation devices in series. Such a sigma-delta modulator is usable in a software defined radio cellular telephone system and in other applications where high-frequency and high-resolution A/D conversion is required.

公开(公告)号：US06764958B1

公开(公告)日：2004-07-20

申请号：US09627667

申请日：2000-07-28

Applicant: Srinivas D Nemani ,  Li-Qun Xia ,  Dian Sugiarto ,  Ellie Yieh ,  Ping Xu ,  Francimar Campana-Schmitt ,  Jia Lee

Inventor： Srinivas D Nemani ,  Li-Qun Xia ,  Dian Sugiarto ,  Ellie Yieh ,  Ping Xu ,  Francimar Campana-Schmitt ,  Jia Lee

IPC: H01L2131

CPC classification number: H01L21/76834 ,  C23C16/325 ,  H01L21/0332 ,  H01L21/3081 ,  H01L21/31144 ,  H01L21/314 ,  H01L21/3148 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76829 ,  Y10S438/931

Abstract: A method of forming a silicon carbide layer for use in integrated circuit fabrication processes is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a dopant in the presence of an electric field. The as-deposited silicon carbide layer has a compressibility that varies as a function of the amount of dopant present in the gas mixture during later formation.

Abstract translation: 提供了一种形成用于集成电路制造工艺中的碳化硅层的方法。 碳化硅层通过在电场存在下使包含硅源，碳源和掺杂剂的气体混合物反应而形成。 沉积的碳化硅层具有随后期形成期间作为气体混合物中存在的掺杂剂量的函数而变化的压缩性。

公开(公告)号：US06759327B2

公开(公告)日：2004-07-06

申请号：US10010950

申请日：2001-11-13

Applicant: Li-Qun Xia ,  Ping Xu ,  Louis Yang

Inventor： Li-Qun Xia ,  Ping Xu ,  Louis Yang

IPC: H01L214763

CPC classification number: H01L21/76835 ,  C23C16/325 ,  H01L21/0206 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/314 ,  H01L21/3148 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76834

Abstract: A method is provided for processing a substrate including providing a processing gas comprising an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the processing gas to deposit a low k silicon carbide barrier layer useful as a barrier layer in damascene or dual damascene applications with low k dielectric materials.

Abstract translation: 提供了一种处理基材的方法，包括提供包含含有苯基的有机硅化合物的处理气体至处理室，并使处理气体反应沉积在大马士革或双镶嵌中可用作阻挡层的低k碳化硅阻挡层 低k电介质材料的应用。