公开(公告)号：US20110100409A1

公开(公告)日：2011-05-05

申请号：US12939689

申请日：2010-11-04

Applicant: Hyun-sik KIM ,  Kyu-hyoung LEE ,  Sang-mock LEE ,  Eun-sung LEE ,  Sang-soo JEE ,  Xiangshu LI

Inventor： Hyun-sik KIM ,  Kyu-hyoung LEE ,  Sang-mock LEE ,  Eun-sung LEE ,  Sang-soo JEE ,  Xiangshu LI

IPC: H01L35/14 ,  H01L35/16 ,  H01L35/30 ,  B22F3/14 ,  B22F1/00

CPC classification number: H01L35/16 ,  B22F1/0044 ,  B22F3/14 ,  C22C1/1084 ,  H01L35/26

Abstract: A thermoelectric nano-composite including a thermoelectric matrix; a nano-metal particle; and a nano-thermoelectric material represented by Formula 1: AxMyBz  Formula 1 wherein A includes at least one element of indium, bismuth, or antimony, B includes at least one element of tellurium or selenium (Se), M includes at least one element of gallium, thallium, lead, rubidium, sodium, or lithium, x is greater than 0 and less than or equal to about 4, y is greater than 0 and less than or equal to about 4, and z is greater than 0 and less than or equal to about 3.

Abstract translation: 包括热电基体的热电纳米复合材料; 纳米金属颗粒; 和由式1表示的纳米热电材料：AxMyBz式1其中A包括至少一种铟，铋或锑元素，B包括至少一种碲或硒元素（Se），M包括至少一种元素 镓，铊，铅，铷，钠或锂，x大于0且小于或等于约4，y大于0且小于或等于约4，并且z大于0且小于 或等于约3。

公开(公告)号：US07872250B2

公开(公告)日：2011-01-18

申请号：US12428284

申请日：2009-04-22

Applicant: Sang-mock Lee ,  Jin-heong Yim ,  Yoon-ho Khang ,  Jin-seo Noh ,  Dong-seok Suh

Inventor： Sang-mock Lee ,  Jin-heong Yim ,  Yoon-ho Khang ,  Jin-seo Noh ,  Dong-seok Suh

IPC: H01L47/00

CPC classification number: H01L45/06 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1608

Abstract: A PRAM and a fabricating method thereof are provided. The PRAM includes a transistor and a data storage capability. The data storage capability is connected to the transistor. The data storage includes a top electrode, a bottom electrode, and a porous PCM layer. The porous PCM layer is interposed between the top electrode and the bottom electrode.

Abstract translation: 提供PRAM及其制造方法。 PRAM包括晶体管和数据存储能力。 数据存储能力连接到晶体管。 数据存储器包括顶电极，底电极和多孔PCM层。 多孔PCM层插入在顶部电极和底部电极之间。

公开(公告)号：US07859035B2

公开(公告)日：2010-12-28

申请号：US11606889

申请日：2006-12-01

Applicant: Chang-wook Moon ,  Sang-mock Lee ,  In-kyeong Yoo ,  Seung-woon Lee ,  El Mostafa Bourim ,  Eun-hong Lee ,  Choong-rae Cho

Inventor： Chang-wook Moon ,  Sang-mock Lee ,  In-kyeong Yoo ,  Seung-woon Lee ,  El Mostafa Bourim ,  Eun-hong Lee ,  Choong-rae Cho

IPC: H01L27/108 ,  H01L29/94

CPC classification number: H01L27/115 ,  B82Y10/00 ,  G11C13/0007 ,  G11C2213/15 ,  G11C2213/32 ,  G11C2213/34 ,  G11C2213/35 ,  G11C2213/79 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/146

Abstract: A storage node having a metal-insulator-metal structure, a non-volatile memory device including a storage node having a metal-insulator-metal (MIM) structure and a method of operating the same are provided. The memory device may include a switching element and a storage node connected to the switching element. The storage node may include a first metal layer, a first insulating layer and a second metal layer, sequentially stacked, and a nano-structure layer. The storage node may further include a second insulating layer and a third metal layer. The nano-structure layer, which is used as a carbon nano-structure layer, may include at least one fullerene layer.

Abstract translation: 提供一种具有金属 - 绝缘体 - 金属结构的存储节点，包括具有金属 - 绝缘体 - 金属（MIM）结构的存储节点的非易失性存储器件及其操作方法。 存储器件可以包括连接到开关元件的开关元件和存储节点。 存储节点可以包括依次层叠的第一金属层，第一绝缘层和第二金属层，以及纳米结构层。 存储节点还可以包括第二绝缘层和第三金属层。 用作碳纳米结构层的纳米结构层可以包括至少一个富勒烯层。

公开(公告)号：US20100209816A1

公开(公告)日：2010-08-19

申请号：US12705279

申请日：2010-02-12

Applicant: Chan KWAK ,  Sang-mock LEE ,  Hee-jung PARK

Inventor： Chan KWAK ,  Sang-mock LEE ,  Hee-jung PARK

IPC: H01M8/10 ,  H01M4/88

CPC classification number: H01M4/9033 ,  B22F1/02 ,  B22F2998/10 ,  B22F2999/00 ,  H01M4/9025 ,  H01M4/9066 ,  H01M8/124 ,  Y02P70/56 ,  B22F1/0088 ,  B22F3/10 ,  B22F3/1007 ,  B22F9/24 ,  B22F2201/013 ,  B22F2201/02 ,  B22F2202/01

Abstract: A fuel electrode material, a method of preparing the fuel electrode material and a solid oxide fuel cell including the fuel electrode material. The fuel electrode material includes a metal oxide bound to a surface of particles, the particles including nickel, copper or a combination thereof, wherein the metal oxide is an oxide of a metal element selected from the group consisting of cerium, titanium, silicon, aluminum, zirconium and a combination including at least one of the foregoing.

Abstract translation: 燃料电极材料，制备燃料电极材料的方法和包括燃料电极材料的固体氧化物燃料电池。 燃料电极材料包括与颗粒表面结合的金属氧化物，所述颗粒包括镍，铜或其组合，其中所述金属氧化物是选自铈，钛，硅，铝的金属元素的氧化物 ，锆以及包含上述的至少一种的组合。

公开(公告)号：US20100170553A1

公开(公告)日：2010-07-08

申请号：US12683151

申请日：2010-01-06

Applicant: Jong-soo RHYEE ,  Sang-mock LEE

Inventor： Jong-soo RHYEE ,  Sang-mock LEE

IPC: H01L35/16 ,  H01B1/02 ,  B32B9/00

CPC classification number: H01L35/28 ,  C01B19/002 ,  C01G3/00 ,  C01G15/006 ,  C01G17/006 ,  C01G19/006 ,  C01G28/002 ,  C01G29/006 ,  C01P2006/32 ,  C01P2006/40 ,  H01L35/16 ,  H01L35/26

Abstract: A thermoelectric material containing a dichalcogenide compound represented by Formula 1 and having low thermoelectric conductivity and high Seebeck coefficient: RaTbX2−nYn  (1) wherein R is a rare earth element, T includes at least one element selected from the group consisting of Group 1 elements, Group 2 elements, and a transition metal, X includes at least one element selected from the group consisting of S, Se, and Te, Y is different from X and includes at least one element selected from the group consisting of S, Se, Te, P, As, Sb, Bi, C, Si, Ge, Sn, B, Al, Ga and In, a is greater than 0 and less than or equal to 1, b is greater than or equal to 0 and less than 1, and n is greater than or equal to 0 and less than 2.

Abstract translation: 含有式1所示的具有低热电导率和高塞贝克系数的二硫属元素化合物的热电材料：RaTbX2-nYn（1）其中R是稀土元素，T包括选自第1族元素中的至少一种元素 ，第2族元素和过渡金属X包含选自S，Se和Te中的至少一种元素，Y不同于X，并且包括选自S，Se， Te，P，As，Sb，Bi，C，Si，Ge，Sn，B，Al，Ga和In，a大于0且小于或等于1，b大于或等于0且小于 1，n大于或等于0且小于2。

公开(公告)号：US07744778B2

公开(公告)日：2010-06-29

申请号：US11961011

申请日：2007-12-20

Applicant: Eun Sung Lee ,  Sang Mock Lee ,  Young Hun Byun ,  Jin Young Bae

Inventor： Eun Sung Lee ,  Sang Mock Lee ,  Young Hun Byun ,  Jin Young Bae

IPC: H01B1/24

CPC classification number: H01G4/206

Abstract: Disclosed is a polymeric surfactant for high dielectric polymer composites, a method of preparing the same, and a high dielectric polymer composite including the same. The polymeric surfactant for high dielectric polymer composites, which includes a head portion having high affinity for a conductive material and a tail portion having high affinity for a polymer resin, forms a passivation layer surrounding the conductive material in the high dielectric polymer composite including the polymeric surfactant, thus ensuring and controlling a high dielectric constant.

Abstract translation: 公开了一种用于高介电聚合物复合材料的聚合物表面活性剂，其制备方法和包含该聚合物的高介电聚合物复合材料。 用于高介电聚合物复合材料的聚合物表面活性剂包括对导电材料具有高亲和性的头部和对聚合物树脂具有高亲和力的尾部，在包含聚合物的高介电聚合物复合材料中形成围绕导电材料的钝化层 表面活性剂，从而确保和控制高介电常数。

公开(公告)号：US20100059723A1

公开(公告)日：2010-03-11

申请号：US12554206

申请日：2009-09-04

Applicant: Sang-mock LEE ,  Eun-sung LEE ,  Kyu-hyoung LEE ,  Il-ho KIM

Inventor： Sang-mock LEE ,  Eun-sung LEE ,  Kyu-hyoung LEE ,  Il-ho KIM

IPC: H01B1/08 ,  H01B1/02

CPC classification number: H01L35/16 ,  C01B19/007 ,  C01P2004/80 ,  C01P2006/40

Abstract: A bulk thermoelectric material includes a matrix, the matrix including a crystalline thermoelectric material; and metal oxide particles disposed in the matrix at a grain boundary or within a crystal structure of the crystalline thermoelectric material.

Abstract translation: 体热电材料包括基体，所述基体包括结晶热电材料; 金属氧化物粒子，在结晶热电材料的晶界或晶体结构内配置在基体中。

公开(公告)号：US20100051080A1

公开(公告)日：2010-03-04

申请号：US12505841

申请日：2009-07-20

Applicant: Jong-soo RHYEE ,  Sang-mock LEE

Inventor： Jong-soo RHYEE ,  Sang-mock LEE

IPC: H01L35/20

CPC classification number: H01L35/16 ,  C01B19/002 ,  C01B19/007 ,  C01P2002/50 ,  C01P2002/72 ,  C01P2004/04 ,  C01P2006/10 ,  C01P2006/32 ,  C01P2006/40 ,  C04B35/547 ,  C04B35/65 ,  C04B2235/3232 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/3296 ,  C04B2235/40 ,  C04B2235/77

Abstract: A thermoelectric material is disclosed. The thermoelectric material is represented by the following formula; (A1-aA′a)4-x(B1-bB′b)3-y. A is a Group XIII element and A′ may be a Group XIII element, a Group XIV element, a rare earth element, a transition metal, or combinations thereof. A and A′ are different from each other. B may be S, Se, Te and B′ may be a Groups XIV, XV, XVI or combinations thereof. B and B′ are different from each other. a is equal to or larger than 0 and less than 1. b is equal to or larger than 0 and less than 1. x is between −1 and 1 and wherein y is between −1 and 1.

Abstract translation: 公开了一种热电材料。 热电材料由下式表示： （A1-aA'a）4-x（B1-bB'b）3-y。 A是第ⅩⅢ族元素，A'可以是第ⅩⅢ族元素，第ⅩⅣ族元素，稀土元素，过渡金属或它们的组合。 A和A'彼此不同。 B可以是S，Se，Te和B'可以是第XIV，XV，XVI族或其组合。 B和B'彼此不同。 a等于或大于0且小于1.b等于或大于0且小于1.x在-1和1之间，并且其中y在-1和1之间。

公开(公告)号：US20100009474A1

公开(公告)日：2010-01-14

申请号：US11476654

申请日：2006-06-29

Applicant: Ha-Jin Kim ,  Sang-Mock Lee

Inventor： Ha-Jin Kim ,  Sang-Mock Lee

IPC: H01L21/18 ,  B05D3/10 ,  C23C14/30 ,  C23C16/00 ,  C23C14/35

CPC classification number: B01J37/0244 ,  B01J23/38 ,  B01J23/74 ,  B01J33/00 ,  B01J37/347 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/16 ,  H01J9/025 ,  H01J2201/30469

Abstract: A method of growing carbon nanotubes and a method of manufacturing a field emission device using the same is provided. The method of growing carbon nanotubes includes steps of preparing a substrate, forming a catalyst metal layer on the substrate to promote growing of carbon nanotubes, forming an inactivation layer on the catalyst metal layer to reduce the activity of the catalyst metal layer, and growing carbon nanotubes on a surface of the catalyst metal layer. Because the inactivation layer partially covers the catalyst metal layer, carbon nanotubes are grown on a portion of the catalyst metal layer that is not covered by the inactivation layer. Thus, density of the carbon nanotubes can be controlled. This method for growing carbon nanotubes can be used to make an emitter of a field emission device. The field emission device having carbon nanotube emitter made of this method has superior electron emission characteristics.

Abstract translation: 提供生长碳纳米管的方法和制造使用其的场致发射器件的方法。 生长碳纳米管的方法包括制备基材的步骤，在基材上形成催化剂金属层以促进碳纳米管的生长，在催化剂金属层上形成失活层以降低催化剂金属层的活性和生长碳 纳米管在催化剂金属层的表面上。 因为失活层部分地覆盖催化剂金属层，所以在催化剂金属层的未被钝化层覆盖的部分上生长碳纳米管。 因此，可以控制碳纳米管的密度。 用于生长碳纳米管的这种方法可用于制造场致发射器件的发射极。 具有由该方法制成的碳纳米管发射体的场发射器件具有优异的电子发射特性。

公开(公告)号：US07642540B2

公开(公告)日：2010-01-05

申请号：US11359428

申请日：2006-02-23

Applicant: Sang-mock Lee ,  Yoon-ho Khang ,  Jin-seo Noh ,  Dong-seok Suh

Inventor： Sang-mock Lee ,  Yoon-ho Khang ,  Jin-seo Noh ,  Dong-seok Suh

IPC: H01L47/00

CPC classification number: G11C13/025 ,  B82Y10/00 ,  G11C13/0004 ,  G11C2213/52 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/143 ,  H01L45/144 ,  H01L45/148

Abstract: A phase change random access memory (PRAM), and a method of operating the PRAM are provided. In the PRAM comprising a switching element and a storage node connected to the switching element, the storage node comprises a first electrode, a second electrode, a phase change layer between the first electrode and a second electrode, and a heat efficiency improving element formed between the first electrode and the phase change layer. The heat efficiency improving element may be one of a carbon nanotube (CNT) layer, a nanoparticle layer, and a nanodot layer, and the nanoparticle layer may be a fullerene layer.

Abstract translation: 提供相变随机存取存储器（PRAM）以及操作PRAM的方法。 在包括开关元件和连接到开关元件的存储节点的PRAM中，存储节点包括第一电极，第二电极，在第一电极和第二电极之间的相变层，以及在第一电极和第二电极之间形成的热效率改善元件 第一电极和相变层。 热效率改善元件可以是碳纳米管（CNT）层，纳米颗粒层和纳米点层之一，并且纳米颗粒层可以是富勒烯层。