公开(公告)号：US11610775B2

公开(公告)日：2023-03-21

申请号：US16318094

申请日：2017-07-14

Applicant: ASM IP Holding B.V.

Inventor： Viljami Pore ,  Werner Knaepen ,  Bert Jongbloed ,  Dieter Pierreux ,  Steven R. A. Van Aerde ,  Suvi Haukka ,  Atsuki Fukazawa ,  Hideaki Fukuda

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/455 ,  H01L21/762 ,  C23C16/04 ,  C23C16/40

Abstract: According to the invention there is provided a method of filling one or more gaps created during manufacturing of a feature on a substrate by providing a deposition method comprising; introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant; introducing a second reactant to the substrate with a second dose. The first reactant is introduced with a subsaturating first dose reaching only a top area of the surface of the one or more gaps and the second reactant is introduced with a saturating second dose reaching a bottom area of the surface of the one or more gaps. A third reactant may be provided to the substrate in the reaction chamber with a third dose, the third reactant reacting with at least one of the first and second reactant.

公开(公告)号：US20220389578A1

公开(公告)日：2022-12-08

申请号：US17885810

申请日：2022-08-11

Applicant: ASM IP Holding B.V.

Inventor： Jan Willem Maes ,  Werner Knaepen ,  Krzysztof Kamil Kachel ,  David Kurt De Roest ,  Bert Jongbloed ,  Dieter Pierreux

IPC: C23C16/455 ,  C23C16/44 ,  H01L21/033 ,  C23C16/448 ,  C23C16/04 ,  C23C16/52 ,  C23C16/56

Abstract: A sequential infiltration synthesis apparatus comprising: a reaction chamber constructed and arranged to hold at least a first substrate; a precursor distribution and removal system to provide to and remove from the reaction chamber a vaporized first or second precursor; and, a sequence controller operably connected to the precursor distribution and removal system and comprising a memory provided with a program to execute infiltration of an infiltrateable material provided on the substrate when run on the sequence controller by: activating the precursor distribution and removal system to provide and maintain the first precursor for a first period T1 in the reaction chamber; activating the precursor distribution and removal system to remove a portion of the first precursor from the reaction chamber for a second period T2; and, activating the precursor distribution and removal system to provide and maintain the second precursor for a third period T3 in the reaction chamber. The program in the memory is programmed with the first period T1 longer than the second period T2.

公开(公告)号：US11107676B2

公开(公告)日：2021-08-31

申请号：US16827506

申请日：2020-03-23

Applicant: ASM IP Holding B.V.

Inventor： Viljami Pore ,  Werner Knaepen ,  Bert Jongbloed ,  Dieter Pierreux ,  Gido Van Der Star ,  Toshiya Suzuki

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/455 ,  C23C16/50 ,  H01L21/762

Abstract: There is provided a method of filling one or more gaps by providing the substrate in a reaction chamber and introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant on a first area; introducing a second reactant to the substrate with a second dose, thereby forming no more than about one monolayer by the second reactant on a second area of the surface, wherein the first and the second areas overlap in an overlap area where the first and second reactants react and leave an initially unreacted area where the first and the second areas do not overlap; and, introducing a third reactant to the substrate with a third dose, the third reactant reacting with the first or second reactant remaining on the initially unreacted area.

公开(公告)号：US20210071298A1

公开(公告)日：2021-03-11

申请号：US16952363

申请日：2020-11-19

Applicant: ASM IP Holding B.V.

Inventor： Jan Willem Maes ,  Werner Knaepen ,  Krzysztof Kamil Kachel ,  David Kurt de Roest ,  Bert Jongbloed ,  Dieter Pierreux

IPC: C23C16/455 ,  C23C16/44 ,  H01L21/033 ,  C23C16/448 ,  C23C16/04 ,  C23C16/52 ,  C23C16/56

Abstract: A sequential infiltration synthesis apparatus comprising: a reaction chamber constructed and arranged to hold at least a first substrate; a precursor distribution and removal system to provide to and remove from the reaction chamber a vaporized first or second precursor; and, a sequence controller operably connected to the precursor distribution and removal system and comprising a memory provided with a program to execute infiltration of an infiltrateable material provided on the substrate when run on the sequence controller by: activating the precursor distribution and removal system to provide and maintain the first precursor for a first period T1 in the reaction chamber; activating the precursor distribution and removal system to remove a portion of the first precursor from the reaction chamber for a second period T2; and, activating the precursor distribution and removal system to provide and maintain the second precursor for a third period T3 in the reaction chamber. The program in the memory is programmed with the first period T1 longer than the second period T2.

公开(公告)号：US20200270752A1

公开(公告)日：2020-08-27

申请号：US16797346

申请日：2020-02-21

Applicant: ASM IP Holding B.V.

Inventor： Dieter Pierreux ,  Werner Knaepen ,  Bert Jongbloed ,  Jeroen Fluit

IPC: C23C16/48 ,  C23C16/458 ,  C23C16/44 ,  C23C16/455

Abstract: The disclosure relates to a substrate processing apparatus, comprising: a first reactor constructed and arranged to process a rack with a plurality of substrates therein; a second reactor constructed and arranged to process a substrate; and, a substrate transfer device constructed and arranged to transfer substrates to and from the first and second reactor. The second reactor may be provided with an illumination system constructed and arranged to irradiate ultraviolet radiation within a range from 100 to 500 nanometers onto a top surface of at least a substrate in the second reactor.

公开(公告)号：US10453685B2

公开(公告)日：2019-10-22

申请号：US15476752

申请日：2017-03-31

Applicant: ASM IP Holding B.V.

Inventor： Kelly Houben ,  Steven R. A. Van Aerde ,  Maarten Stokhof ,  Bert Jongbloed ,  Dieter Pierreux ,  Werner Knaepen

IPC: H01L21/311 ,  H01L21/033

Abstract: The invention relates to a method of forming a semiconductor device by patterning a substrate by providing an amorphous silicon layer on the substrate and forming a hard mask layer on the amorphous silicon layer. The amorphous silicon layer is provided with an anti-crystallization dopant to keep the layer amorphous at increased temperatures (relative to not providing the anti-crystallization dopant). The hard mask layer may comprise silicon and nitrogen.

公开(公告)号：US20180171475A1

公开(公告)日：2018-06-21

申请号：US15380921

申请日：2016-12-15

Applicant: ASM IP Holding B.V.

Inventor： Jan Willem Maes ,  Werner Knaepen ,  Krzysztof Kamil Kachel ,  David Kurt De Roest ,  Bert Jongbloed ,  Dieter Pierreux

IPC: C23C16/455 ,  C23C16/52 ,  C23C16/56 ,  C23C16/448 ,  C23C16/04

CPC classification number: C23C16/45523 ,  C23C16/042 ,  C23C16/045 ,  C23C16/4412 ,  C23C16/448 ,  C23C16/4485 ,  C23C16/45527 ,  C23C16/52 ,  C23C16/56 ,  H01L21/0332 ,  H01L21/0337

Abstract: A sequential infiltration synthesis apparatus comprising: a reaction chamber constructed and arranged to hold at least a first substrate; a precursor distribution and removal system to provide to and remove from the reaction chamber a vaporized first or second precursor; and, a sequence controller operably connected to the precursor distribution and removal system and comprising a memory provided with a program to execute infiltration of an infiltrateable material provided on the substrate when run on the sequence controller by: activating the precursor distribution and removal system to provide and maintain the first precursor for a first period T1 in the reaction chamber; activating the precursor distribution and removal system to remove a portion of the first precursor from the reaction chamber for a second period T2; and, activating the precursor distribution and removal system to provide and maintain the second precursor for a third period T3 in the reaction chamber. The program in the memory is programmed with the first period T1 longer than the second period T2.

公开(公告)号：US20140357090A1

公开(公告)日：2014-12-04

申请号：US13907718

申请日：2013-05-31

Applicant: ASM IP Holding B.V.

Inventor： Werner Knaepen ,  Bert Jongbloed ,  Dieter Pierreux ,  Peter Zagwijn ,  Hessel Sprey ,  Cornelius A. van der Jeugd ,  Marinus Josephus de Blank ,  Robin Roelofs ,  Qi Xie ,  Jan Willem Maes

IPC: H01L21/02

CPC classification number: H01L21/02178 ,  C23C16/303 ,  C23C16/45525 ,  C23C16/4583 ,  H01L21/0228 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003

Abstract: A process for depositing aluminum nitride is disclosed. The process comprises providing a plurality of semiconductor substrates in a batch process chamber and depositing an aluminum nitride layer on the substrates by performing a plurality of deposition cycles without exposing the substrates to plasma during the deposition cycles. Each deposition cycle comprises flowing an aluminum precursor pulse into the batch process chamber, removing the aluminum precursor from the batch process chamber, and removing the nitrogen precursor from the batch process chamber after flowing the nitrogen precursor and before flowing another pulse of the aluminum precursor. The process chamber may be a hot wall process chamber and the deposition may occur at a deposition pressure of less than 1 Torr.

Abstract translation: 公开了一种沉积氮化铝的方法。 该方法包括在间歇处理室中提供多个半导体衬底，并且通过在沉积循环期间不使衬底暴露于等离子体，通过执行多个沉积循环在衬底上沉积氮化铝层。 每个沉积循环包括将铝前体脉冲流入分批处理室，从分批处理室中除去铝前体，以及在氮气前体流动之后并且在流过铝前体的另一个脉冲之前从分批处理室中除去氮前体。 处理室可以是热壁处理室，并且沉积可以在小于1托的沉积压力下进行。