公开(公告)号：US20160115590A1

公开(公告)日：2016-04-28

申请号：US14987420

申请日：2016-01-04

Applicant: ASM IP Holding B.V.

Inventor： Suvi Haukka ,  Eric James Shero ,  Fred Alokozai ,  Dong Li ,  Jereld Lee Winkler ,  Xichong Chen

IPC: C23C16/44

CPC classification number: C23C16/4405 ,  C23C16/4404 ,  C23F1/00 ,  C23F1/08 ,  H01L21/32135 ,  H01L21/32136

Abstract: A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.

Abstract translation: 公开了一种用于处理沉积反应器的系统和方法。 该系统和方法去除或减轻用于沉积掺杂金属膜的气相反应器中的残余物的形成，例如掺铝的碳化钛膜或铝掺杂的碳化钽膜。 该方法包括将反应室暴露于缓和形成残留物形成物质的处理反应物的步骤。

公开(公告)号：US12293911B2

公开(公告)日：2025-05-06

申请号：US18225366

申请日：2023-07-24

Applicant: ASM IP Holding B.V.

Inventor： YoungChol Byun ,  Bed Prasad Sharma ,  Shankar Swaminathan ,  Eric James Shero

IPC: C23C16/455 ,  C23C16/36 ,  H01L21/02 ,  H01L21/768

Abstract: A method for forming a layer comprising SiOCN on a substrate is disclosed. An exemplary method includes thermally depositing the layer comprising SiOCN on a surface of the substrate. The layer comprising SiOCN can be used for various applications, including spacers, etch stop layers, and etch resistant layers.

公开(公告)号：US20250109491A1

公开(公告)日：2025-04-03

申请号：US18900571

申请日：2024-09-27

Applicant: ASM IP Holding B.V.

Inventor： Eric James Shero ,  Marko Tuominen ,  Saima Ali ,  Bhagyesh Purohit ,  Eva E. Tois ,  Kizysztof Kamil Kachel ,  Adam Vianna ,  Vincent Vandalon ,  Charles Dezelah

IPC: C23C16/04

Abstract: The disclosure relates to methods, processing assemblies, reactants and vapor deposition vessels for selective vapor-phase deposition of inhibitor material on a substrate comprising two surfaces. In some embodiments of the disclosure, the inhibition material is deposited on the first surface of the substrate, whereas substantially no inhibitor material is deposited on the second surface of the substrate. The inhibitor material is formed by contacting the substrate with a vapor-phase inhibitor reactant comprising a silicon atom bonded to an oxygen atom and to a second atom selected from nitrogen and halogens.

公开(公告)号：US12237171B1

公开(公告)日：2025-02-25

申请号：US18379228

申请日：2023-10-12

Applicant: ASM IP Holding B.V.

Inventor： Giuseppe Alessio Verni ,  Qi Xie ,  Henri Jussila ,  Charles Dezelah ,  Jiyeon Kim ,  Eric James Shero ,  Paul Ma

IPC: H01L21/285 ,  H01L29/49

Abstract: Methods and systems for depositing vanadium nitride layers onto a surface of the substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process, depositing a vanadium nitride layer onto a surface of the substrate. The cyclical deposition process can include providing a vanadium halide precursor to the reaction chamber and separately providing a nitrogen reactant to the reaction chamber. The cyclical deposition process may desirably be a thermal cyclical deposition process.

公开(公告)号：US20240395555A1

公开(公告)日：2024-11-28

申请号：US18791605

申请日：2024-08-01

Applicant: ASM IP Holding B.V.

Inventor： Qi Xie ,  Eric James Shero ,  Charles Dezelah ,  Giuseppe Alessio Verni ,  Petri Raisanen

IPC: H01L21/28 ,  C23C16/34 ,  C23C16/455 ,  C23C16/52 ,  H01L29/49

Abstract: Methods and systems for depositing chromium nitride layers onto a surface of the substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a deposition process, depositing a chromium nitride layer onto a surface of the substrate. The deposition process can include providing a chromium precursor to the reaction chamber and separately providing a nitrogen reactant to the reaction chamber. The deposition process may be a thermal cyclical deposition process.

公开(公告)号：US12068164B2

公开(公告)日：2024-08-20

申请号：US17470426

申请日：2021-09-09

Applicant: ASM IP HOLDING B.V.

Inventor： Eric James Shero

IPC: H01L21/285 ,  C23C16/04 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  C23C16/56

CPC classification number: H01L21/28568 ,  C23C16/045 ,  C23C16/34 ,  C23C16/4408 ,  C23C16/45527 ,  C23C16/56

Abstract: Vapor deposition processes are provided for bottom up filling of trenches and other structures with metal nitrides such as vanadium nitride and titanium nitride. In some embodiments, VCl4 can be used as an etchant source in the deposition processes. The reaction conditions are selected such that some Cl2 forms in the reaction space and preferentially etches deposited metal nitride at the upper surfaces of a trench or other three-dimensional feature on a substrate. The self-etching during the deposition process facilitates a bottom up filling of the feature and may reduce or eliminate the formation of seams or voids.

公开(公告)号：US20240218506A1

公开(公告)日：2024-07-04

申请号：US18395801

申请日：2023-12-26

Applicant: ASM IP Holding B.V.

Inventor： Eric James Shero ,  Jonathan Bakke ,  Arjav Prafulkumar Vashi ,  Todd Robert Dunn ,  Paul Ma ,  Jacqueline Wrench ,  Jereld Lee Winkler ,  Shuaidi Zhang ,  Shubham Garg ,  YoungChol Byun

IPC: C23C16/448 ,  C23C16/455 ,  C23C16/52

CPC classification number: C23C16/448 ,  C23C16/45557 ,  C23C16/45561 ,  C23C16/52

Abstract: The substrate processing system includes a delivery vessel having a first inner volume, disposed in a first location on a substrate processing platform, a remote refill vessel in fluid communication with the delivery vessel via a chemical delivery line, the remote refill vessel comprising a second inner volume greater than the first inner volume and disposed in a second location remote from the substrate processing platform, and a first heating device or a first pressurizing device, or a combination thereof, proximate the remote refill vessel, operable to heat or pressurize, or a combination thereof, a chemical disposed in the remote refill vessel sufficient to change a phase of the chemical from a first phase to a second phase.

公开(公告)号：US20240072104A1

公开(公告)日：2024-02-29

申请号：US18238586

申请日：2023-08-28

Applicant: ASM IP Holding B.V.

Inventor： Fu Tang ,  Eric James Shero

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  C23C16/56 ,  H01L21/311

CPC classification number: H01L28/40 ,  C23C16/405 ,  C23C16/45527 ,  C23C16/56 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/31111

Abstract: Methods for forming a device structure including a high-k dielectric layer are disclosed. An exemplary method includes using a first cyclical deposition process to deposit a dielectric layer on a substrate and using a second cyclical deposition process to deposit a capping layer directly on the dielectric layer. The methods also include thermally annealing the dielectric layer with the capping layer directly thereon to form a high-k dielectric layer. Exemplary device structures are disclosure, such as metal-insulator-metal capacitor structures.

公开(公告)号：US20240035164A1

公开(公告)日：2024-02-01

申请号：US18359731

申请日：2023-07-26

Applicant: ASM IP Holding, B.V.

Inventor： Jan Deckers ,  Eric James Shero

IPC: C23C16/52 ,  C23C16/448 ,  H01L21/67 ,  C23C16/455 ,  G01N7/18

CPC classification number: C23C16/52 ,  C23C16/4481 ,  H01L21/67253 ,  C23C16/45553 ,  G01N7/18

Abstract: The invention provides in method and systems for determining the amount of solid precursor in a precursor vessel of a semiconductor manufacturing process, wherein the amount of precursor in the precursor vessel is determined by measuring through monochromatic measurements an optical absorption in the process gas flowing from the precursor vessel to the process chamber.

公开(公告)号：US20230298902A1

公开(公告)日：2023-09-21

申请号：US18121064

申请日：2023-03-14

Applicant: ASM IP HOLDING B.V.

Inventor： Jiyeon Kim ,  Petri Raisanen ,  Dong Li ,  Eric James Shero

IPC: H01L21/3205 ,  H01L29/40 ,  H01L21/02 ,  H01L21/285

CPC classification number: H01L21/32051 ,  H01L29/401 ,  H01L21/02046 ,  H01L21/28556

Abstract: Disclosed herein are systems and methods method for thin film deposition of molybdenum for source/drain formation. A deposition process may be performed in which the surface is contacted in the reaction chamber with a first oxygen-free molybdenum halide reactant at a first temperature, wherein said contacting with the first oxygen-free molybdenum halide reactant forms at least one layer of molybdenum on the substrate. In some embodiments, the temperature of the reaction chamber may be raised from the first temperature to a second temperature. In some embodiments, the substrate in the reaction chamber may be contacted with a second oxygen-free molybdenum halide reactant at the second temperature, wherein said contacting with the second oxygen-free molybdenum halide reactant forms at least one layer of molybdenum on the substrate. In some embodiments, the deposition at the second temperature may be repeated until a molybdenum-containing film of desired thickness is formed.