公开(公告)号：US06210989B1

公开(公告)日：2001-04-03

申请号：US09398969

申请日：1999-09-17

申请人： Anthony D. Kurtz ,  Alexander Ned ,  Scott J. Goodman

发明人： Anthony D. Kurtz ,  Alexander Ned ,  Scott J. Goodman

IPC分类号： H01L2720

CPC分类号： G01L9/0055 ,  G01L19/0084

摘要： There is disclosed a semiconductor sensor device comprising a semiconductor diaphragm member having a top surface coated with an oxide layer; P+ sensor elements fusion bonded to the oxide layer at a relatively central area of the diaphragm; P+ finger elements fusion bonded to the oxide layer extending from the sensors to an outer contact location of the diaphragm for each finger; and an external rim of P+ material fusion bonded to the oxide layer and surrounding the sensors and fingers. A first glass wafer member is electrostatically bonded at a bottom surface to the fingers and rim to hermetically seal the sensors and fingers of the diaphragm member. The first glass wafer includes a depression above the sensors and has a plurality of apertures, where each aperture is associated with a separate finger at the contact location and each aperture being smaller than the associated finger lining up with the contact location wherein each contact location can be accessed via the associated aperture in the first glass wafer member. A second glass wafer member is sealingly coupled to a top surface of the first glass wafer and has a plurality of apertures aligned with the plurality of apertures of the first glass wafer member and containing a group of hermetically sealed pins for coupling to the contact locations.

摘要翻译： 公开了一种半导体传感器装置，其包括具有涂覆有氧化物层的顶表面的半导体隔膜部件; P +传感器元件在隔膜的相对中心区域处熔合到氧化物层; P +手指元件融合到从传感器延伸到每个手指的隔膜的外部接触位置的氧化物层; 并且P +材料的外缘融合到氧化物层并且围绕传感器和手指。 第一玻璃晶片构件在底面处与手指和边缘静电结合，以气密地密封隔膜构件的传感器和手指。 第一玻璃晶片包括在传感器上方的凹陷部，并且具有多个孔，其中每个孔与接触位置处的单独手指相关联，并且每个孔小于相关联的手指与接触位置对齐，其中每个接触位置可以 通过第一玻璃晶片构件中的相关孔径进入。 第二玻璃晶片构件密封地联接到第一玻璃晶片的顶表面，并且具有与第一玻璃晶片构件的多个孔对准的多个孔，并且包含一组用于联接到接触位置的密封销。

公开(公告)号：US5569626A

公开(公告)日：1996-10-29

申请号：US234307

申请日：1994-04-28

申请人： Anthony D. Kurtz ,  Joseph S. Shor ,  Alexander A. Ned

发明人： Anthony D. Kurtz ,  Joseph S. Shor ,  Alexander A. Ned

IPC分类号： H01L31/0232 ,  H01L31/028 ,  H01L21/306

CPC分类号： H01L31/0232 ,  H01L31/028 ,  Y02E10/547 ,  Y10S438/96 ,  Y10T29/42

摘要： Piezo-optical pressure sensitive devices employing porous semiconductor material as a stress sensitive member. The devices monitor pressure or force applied thereto by detecting a corresponding change in the amount of light absorbed by a porous layer of semiconductive material such as silicon. A pressure or stress signal is thus converted into an optical one. The sensing element of an optical switch embodiment of the device is comprised of a transparent layer of material upon which there is disposed a porous layer of semiconductive material. When unstressed, the porous layer absorbs monochromatic light of a predetermined wavelength. When the porous layer is stressed, a metallized epitaxial layer formed thereon reflects the light back through the transparent layer where it can be detected by a light detection system.

摘要翻译： 使用多孔半导体材料作为应力敏感元件的压电光敏器件。 该装置通过检测由诸如硅的半导体材料的多孔层吸收的光量的相应变化来监测施加到其上的压力或力。 因此，压力或应力信号被转换为光学信号。 装置的光学开关实施例的感测元件由透明的材料层组成，其上设置有多孔半导体材料层。 当不受应力时，多孔层吸收预定波长的单色光。 当多孔层受到应力时，形成在其上的金属化外延层通过透明层反射光，其中它可被光检测系统检测。

公开(公告)号：US5539236A

公开(公告)日：1996-07-23

申请号：US303456

申请日：1994-09-09

申请人： Anthony D. Kurtz ,  Alexander A. Ned

发明人： Anthony D. Kurtz ,  Alexander A. Ned

IPC分类号： G01P15/12 ,  H01L29/82

CPC分类号： G01P15/123 ,  Y10S73/01 ,  Y10S73/04

摘要： An electromechanical transducer is provided, and the process for making it utilizes a piezoresistive element or gage which is dielectrically isolated from a gap spanning member and substrate upon which it is supported. The gage of the invention is a force gage and is derived from a sacrificial wafer by a series of etching and bonding steps which ultimately provide a gage with substantially reduced strain energy requirements.

公开(公告)号：US5428985A

公开(公告)日：1995-07-04

申请号：US191514

申请日：1994-02-03

申请人： Anthony D. Kurtz ,  Wolf Landmann

发明人： Anthony D. Kurtz ,  Wolf Landmann

IPC分类号： G01L1/22 ,  G01L9/04 ,  G01M3/32 ,  G01M3/26 ,  G01N27/04

CPC分类号： G01L1/2281 ,  G01L9/045 ,  G01M3/3236

摘要： An improved gas leak detection apparatus is disclosed for detecting a leak in a gas containing vessel of constant volume which compensates for deviations in behavior of a contained gas from an ideal model. The apparatus incorporates a pressure transducer, an amplifying means and a feedback means and operates to effectively and accurately model the van der Waals equation of state for gasses. The apparatus is adaptable for operation with any number of different gases by simply changing the values of specific circuit elements. The output of the apparatus is proportional to the total number of moles of gas present in the containment vessel at any particular time, and will thus indicate a leak from the vessel upon a reduction in that number of moles, absent an intentional reduction of the mass of gas in the vessel.

摘要翻译： 公开了一种改进的气体泄漏检测装置，用于检测恒定体积的含气体的容器中的泄漏，其补偿所含气体与理想模型的性能偏差。 该装置包括压力传感器，放大装置和反馈装置，并且操作以有效和精确地模拟用于气体的范德华状态方程。 该装置通过简单地改变特定电路元件的值，适用于任意数量的不同气体的操作。 设备的输出与任何特定时间内存在于安全壳中的气体的总摩尔数成比例，并且因此表示在减少该摩尔数时来自容器的泄漏，没有有意的减小质量 的气体。

公开(公告)号：US5386142A

公开(公告)日：1995-01-31

申请号：US58016

申请日：1993-05-07

申请人： Anthony D. Kurtz ,  Joseph S. Shor ,  Alexander A. Ned

发明人： Anthony D. Kurtz ,  Joseph S. Shor ,  Alexander A. Ned

IPC分类号： G01L9/00 ,  H01L23/16

CPC分类号： G01L9/0055 ,  G01L9/0042 ,  Y10S148/012 ,  Y10S438/96

摘要： A first semiconductor wafer having a semiconductor element such as a piezoresistive element or any integrated circuit located on a top surface thereof is bonded to a second semiconductor wafer so that the semiconductor element on the first wafer is received in a cavity sealed from the outside environment. The bottom surface of the second water is prepared by etching it about a mask pattern so that the pattern projects from the bottom surface, thereby forming the cavity and defining projecting surfaces which are bonded to corresponding projecting areas on the first wafer to create a hermetic seal therebetween. The second wafer is electrochemically etched to produce porous silicon with regions of non-porous monocrystalline silicon extending between the top and bottom surfaces. The porous areas are thermally oxidized to convert them to silicon dioxide while the non-porous regions bonded to bond pads of the resistive pattern on the first wafer act as extended contacts.

摘要翻译： 具有诸如压阻元件的半导体元件或位于其顶表面上的任何集成电路的第一半导体晶片被接合到第二半导体晶片，使得第一晶片上的半导体元件被接收在与外部环境密封的空腔中。 第二水的底表面通过围绕掩模图案进行蚀刻来制备，使得图案从底表面突出，从而形成空腔并且限定突出表面，其结合到第一晶片上的相应突出区域以形成气密封 之间。 第二晶片被电化学蚀刻以产生具有在顶表面和底表面之间延伸的非多孔单晶硅区域的多孔硅。 多孔区域被热氧化以将其转化为二氧化硅，而与第一晶片上的电阻图案的接合焊盘键合的非多孔区域作为延伸的触点。

公开(公告)号：US5376818A

公开(公告)日：1994-12-27

申请号：US168465

申请日：1993-12-16

申请人： Anthony D. Kurtz

发明人： Anthony D. Kurtz

IPC分类号： H01L29/16 ,  H01L29/84 ,  H01L29/96

CPC分类号： H01L29/16 ,  H01L29/84 ,  Y10S438/96

摘要： Stress sensitive P-N junction devices are fabricated by forming a porous layer in a semiconductor of a given conductivity, diffusing dopants of the opposite conductivity into the porous layer and forming a non-porous layer on the porous layer. This results in a microporous structure having a plurality of microcrystalline regions extending therethrough, which enhances the quantum confinement of energetic carriers and results in a device which is highly sensitive to stress.

摘要翻译： 通过在给定导电率的半导体中形成多孔层来制造应力敏感的P-N结器件，将具有相反导电性的掺杂剂扩散到多孔层中并在多孔层上形成无孔层。 这导致具有延伸穿过其中的多个微晶区域的微孔结构，这增强了高能载流子的量子限制并导致对应力高度敏感的装置。

公开(公告)号：US5376241A

公开(公告)日：1994-12-27

申请号：US159375

申请日：1993-11-30

申请人： Joseph S. Shor ,  Anthony D. Kurtz

发明人： Joseph S. Shor ,  Anthony D. Kurtz

IPC分类号： H01L21/465 ,  H01L21/76 ,  H01L29/24 ,  H01L29/861 ,  H01L33/00 ,  H01L33/34 ,  C25F3/12

CPC分类号： H01L33/34 ,  H01L21/465 ,  H01L21/76 ,  H01L29/1608 ,  H01L29/861 ,  H01L33/0054 ,  Y10S438/96

摘要： The formation of porous SiC occurs under electrochemical anodization. A sample of SiC is contacted electrically with nickel and placed into an electrochemical cell which cell includes a counter electrode and a reference electrode. The sample is encapsulated so that only a bare semiconductor surface is exposed. The electrochemical cell is filled with an HF electrolyte which dissolves the SiC electrochemically. A potential is applied to the semiconductor and UV light illuminates the surface of the semiconductor. By controlling the light intensity, the potential and the doping level, a porous layer is formed in the semiconductor and thus one produces porous SiC.

摘要翻译： 多孔SiC的形成发生在电化学阳极氧化下。 将SiC样品与镍电接触并置于电化学电池中，该电池包括对电极和参比电极。 样品被封装，使得只有裸露的半导体表面被暴露。 电化学电池填充有电化学溶解SiC的HF电解质。 对半导体施加电位，UV光照射半导体的表面。 通过控制光强度，电位和掺杂水平，在半导体中形成多孔层，从而产生多孔SiC。

公开(公告)号：US5286671A

公开(公告)日：1994-02-15

申请号：US58400

申请日：1993-05-07

申请人： Anthony D. Kurtz ,  Alexander A. Ned

发明人： Anthony D. Kurtz ,  Alexander A. Ned

IPC分类号： H01L21/20 ,  H01L21/306

CPC分类号： H01L21/2007 ,  Y10S148/012

摘要： A method of bonding a first silicon wafer to a second silicon wafer comprises the steps of diffusing a high conductivity pattern into a surface of a first semiconductor wafer, etching a portion of the surface to raise at least a portion of the pattern, providing a second semiconductor wafer having an insulating layer of a silicon compound disposed thereon, contacting the surface of the pattern to the insulating layer, and bonding the first and second semiconductor wafers at an elevated temperature.

摘要翻译： 将第一硅晶片接合到第二硅晶片的方法包括以下步骤：将高导电性图案扩散到第一半导体晶片的表面中，蚀刻表面的一部分以升高图案的至少一部分，从而提供第二硅晶片 半导体晶片具有设置在其上的硅化合物的绝缘层，与图案的表面接触绝缘层，并且在升高的温度下接合第一和第二半导体晶片。

公开(公告)号：US4860442A

公开(公告)日：1989-08-29

申请号：US276879

申请日：1988-11-28

申请人： Roger W. Ainsworth ,  John L. Allen ,  Anthony D. Kurtz

发明人： Roger W. Ainsworth ,  John L. Allen ,  Anthony D. Kurtz

IPC分类号： G01D11/30 ,  G01L19/00 ,  H05K1/02 ,  H05K1/03 ,  H05K1/05 ,  H05K1/18

CPC分类号： H05K1/021 ,  G01D11/30 ,  G01L19/00 ,  H05K1/0306 ,  H05K1/053 ,  H05K1/182 ,  H05K2201/09745 ,  H05K2203/049 ,  Y10T29/49126 ,  Y10T29/4913

摘要： There is disclosed a method of mounting a pressure transducer on a convoluted three-dimensional structure as for example a turbine blade. The method first forms a groove on a surface of a blade. The groove is formed at a given length and depth in order to accommodate a plurality of components. The groove is then filled with a ceramic material so that the top of the groove is aligned with the top surface of the structure. The entire structure is then coated with a first layer of a ceramic material which layer also covers the filled groove. Suitable conductors are then placed on the coated surface so that they span and overlie the groove. The structure is then coated with a second layer of ceramic material and the coating covers the conductors thereby serving to embed the conductors between the first and second layers. A second groove is then formed in the first and second layers which second groove overlies the first groove and which extends into the first groove. The formation of the second groove operates to separate or cut the conductors as overlying the first groove. Then ceramic material from the second layer is removed on each side of the second groove to expose the separated end surfaces of the conductors. The pressure transducer which is an integrated circuit is then placed into the second groove, and one now bonds the component terminals of the pressure transducer to the exposed conductor surfaces. In this manner both the wires leading from the transducer and the transducer itself are beneath the surface of the structure and do not interfere with the surface contours of the structure while further allowing testing of the same in all operating environments.

摘要翻译： 公开了一种将压力传感器安装在例如涡轮叶片的卷积三维结构上的方法。 该方法首先在叶片的表面上形成凹槽。 凹槽以给定的长度和深度形成，以便容纳多个部件。 然后用陶瓷材料填充凹槽，使得凹槽的顶部与结构的顶表面对齐。 然后将整个结构涂覆有第一层陶瓷材料，该层还覆盖填充的凹槽。 然后将合适的导体放置在涂覆的表面上，使得它们跨越并覆盖在凹槽上。 然后将该结构涂覆有第二层陶瓷材料，并且涂层覆盖导体，从而用于将导体嵌入第一和第二层之间。 然后在第一和第二层中形成第二凹槽，其中第二凹槽覆盖第一凹槽并且延伸到第一凹槽中。 第二凹槽的形成用于将导体分隔或切割成覆盖第一凹槽。 然后在第二槽的每一侧去除来自第二层的陶瓷材料，以露出导体的分开的端面。 然后将作为集成电路的压力传感器放置在第二槽中，然后将压力传感器的组件端子连接到暴露的导体表面。 以这种方式，从换能器和换能器本身引出的电线都在结构的表面下方，并且不会干扰结构的表面轮廓，同时还允许在所有操作环境中对其进行测试。

公开(公告)号：US4814856A

公开(公告)日：1989-03-21

申请号：US860523

申请日：1986-05-07

申请人： Anthony D. Kurtz ,  Timothy A. Nunn ,  Richard A. Weber

发明人： Anthony D. Kurtz ,  Timothy A. Nunn ,  Richard A. Weber

IPC分类号： G01L9/00 ,  H01L27/20

CPC分类号： G01L9/0055 ,  G01L9/0042 ,  H01L27/20

摘要： A semiconductor transducer structure is fabricated by utilizing varying height diffused layers in a sacrificial wafer. A carrier wafer has a dielectric layer on a top surface which includes a layer of glass. The sacarificial wafer, after beign subject to diffusion of highly doped semiconductor material, exhibits a plurality of varying depth regions. These regions manifest the basic transducer structure. By utilizing selective etching, one can thus form a transducer structure on the sacrificial wafer which is bonded to the carrier wafer by means of an electrostatic bond. The resultant method and structure enables one to provide transducers with improved operating characteristics which are adaptable for many different modes of operation.

摘要翻译： 通过在牺牲晶片中利用变化的高度扩散层来制造半导体传感器结构。 载体晶片在顶表面上具有包括玻璃层的电介质层。 在人造晶片经受高掺杂半导体材料的扩散后，表现出多个变化的深度区域。 这些区域表现出基本的换能器结构。 通过利用选择性蚀刻，因此可以在牺牲晶片上形成通过静电键结合到载体晶片上的换能器结构。 所得到的方法和结构使得能够提供能够适用于许多不同操作模式的改进的操作特性的换能器。