公开(公告)号：US12261132B2

公开(公告)日：2025-03-25

申请号：US18485709

申请日：2023-10-12

Applicant: Apple Inc.

Inventor： Vidhya Ramachandran ,  Sanjay Dabral ,  SivaChandra Jangam ,  Jun Zhai ,  Kunzhong Hu

IPC: H01L23/00 ,  H01L21/78 ,  H01L23/544 ,  H01L23/58

Abstract: Chip sealing structures and methods of manufacture are described. In an embodiment, a chip structure includes a main body area formed of a substrate, a back-end-of-the-line (BEOL) build-up structure spanning over the substrate, and chip edge sidewalls extending from a back surface of the substrate to a top surface of the BEOL build-up structure and laterally surrounding the substrate and the BEOL build-up structure. In accordance with embodiments, the chip structure may further include a conformal sealing layer covering at least a first chip edge sidewall of the chip edge sidewalls and a portion of the top surface of the BEOL build-up structure, and forming a lip around the top surface of the BEOL build-up structure.

公开(公告)号：US12119304B2

公开(公告)日：2024-10-15

申请号：US17321080

申请日：2021-05-14

Applicant: Apple Inc.

Inventor： Sanjay Dabral ,  Zhitao Cao ,  Kunzhong Hu

IPC: H01L23/538 ,  H01L21/56 ,  H01L21/66 ,  H01L23/31 ,  H01L23/532 ,  H01L25/065

CPC classification number: H01L23/5384 ,  H01L21/56 ,  H01L22/12 ,  H01L23/31 ,  H01L23/53228 ,  H01L23/5386 ,  H01L25/0655

Abstract: Structures and methods of forming fine die-to-die interconnect routing are described. In an embodiment, a package includes a package-level RDL than spans across a die set and includes a plurality of die-to-die interconnects connecting contact pads between each die. In an embodiment, the plurality of die-to-die interconnects is embedded within one or more photoimageable organic dielectric layers.

公开(公告)号：US20240105702A1

公开(公告)日：2024-03-28

申请号：US18178820

申请日：2023-03-06

Applicant: Apple Inc.

Inventor： Chonghua Zhong ,  Jiongxin Lu ,  Kunzhong Hu ,  Jun Zhai ,  Sanjay Dabral

IPC: H01L25/18 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L23/36 ,  H01L25/00

CPC classification number: H01L25/18 ,  H01L21/561 ,  H01L23/3107 ,  H01L23/36 ,  H01L24/08 ,  H01L24/13 ,  H01L24/32 ,  H01L24/80 ,  H01L25/50 ,  H01L2224/08145 ,  H01L2224/13082 ,  H01L2224/32245 ,  H01L2224/80895 ,  H01L2224/80896

Abstract: Semiconductor packages formed utilizing wafer reconstitution and optionally including an integrated heat spreader and methods of fabrication are described. In an embodiment, a semiconductor package includes a first package level, a second package level including one or more second-level chiplets, and a heat spreader bonded to the second package level with a metallic layer, which may include one or more intermetallic compounds formed by transient liquid phase bonding.

公开(公告)号：US20240105699A1

公开(公告)日：2024-03-28

申请号：US17934409

申请日：2022-09-22

Applicant: Apple Inc.

Inventor： Sanjay Dabral ,  SivaChandra Jangam

IPC: H01L25/18 ,  H01L23/00 ,  H01L23/31 ,  H01L23/48 ,  H01L23/498

CPC classification number: H01L25/18 ,  H01L23/3128 ,  H01L23/481 ,  H01L23/49827 ,  H01L24/08 ,  H01L24/05 ,  H01L24/80 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/08225 ,  H01L2224/80379 ,  H01L2224/80444 ,  H01L2224/80447

Abstract: A system in package structure and method of fabrication using wafer reconstitution are described. In an embodiment a 3D system includes a mid-layer interposer a first package level underneath the mid-layer interposer and a second package level over the mid-layer interposer. Second package level components can be bonded to the mid-layer interposer with metal-metal bonds and optionally dielectric-dielectric bonds, while the first package level components can be bonded to the mid-layer interposer with dielectric-dielectric and optionally metal-metal bonds.

公开(公告)号：US20240105545A1

公开(公告)日：2024-03-28

申请号：US17934346

申请日：2022-09-22

Applicant: Apple Inc.

Inventor： Jiongxin Lu ,  Kunzhong Hu ,  Jun Zhai ,  Sanjay Dabral

IPC: H01L23/373 ,  H01L23/00 ,  H01L23/31 ,  H01L25/18

CPC classification number: H01L23/3738 ,  H01L23/3185 ,  H01L24/08 ,  H01L24/29 ,  H01L24/32 ,  H01L25/18 ,  H01L24/05 ,  H01L24/80 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/08145 ,  H01L2224/08225 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29124 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/32245 ,  H01L2224/32503 ,  H01L2224/80379

Abstract: Semiconductor packages including an integrated heat spreader and methods of fabrication are described. In an embodiment, a semiconductor package includes a first package level, a second package level including one or more second-level chiplets, and a heat spreader bonded to the second package level with a metallic layer, which may include one or more intermetallic compounds formed by transient liquid phase bonding.

公开(公告)号：US20240096648A1

公开(公告)日：2024-03-21

申请号：US18509801

申请日：2023-11-15

Applicant: Apple Inc.

Inventor： Sanjay Dabral ,  Chi Nung Ni ,  Long Huang ,  SivaChandra Jangam

IPC: H01L21/56 ,  H01L23/00 ,  H01L25/065

CPC classification number: H01L21/56 ,  H01L24/32 ,  H01L25/0655 ,  H01L2224/32059 ,  H01L2224/32137 ,  H01L2924/183

Abstract: Chip sealing designs to accommodate die-to-die communication are described. In an embodiment, a chip structure includes a split metallic seal structure including a lower metallic seal and an upper metallic seal with overlapping metallization layers, and a through seal interconnect navigating through the split metallic seal structure.

公开(公告)号：US20240038689A1

公开(公告)日：2024-02-01

申请号：US18485709

申请日：2023-10-12

Applicant: Apple Inc.

Inventor： Vidhya Ramachandran ,  Sanjay Dabral ,  SivaChandra Jangam ,  Jun Zhai ,  Kunzhong Hu

IPC: H01L23/00 ,  H01L21/78 ,  H01L23/58 ,  H01L23/544

CPC classification number: H01L23/562 ,  H01L21/78 ,  H01L23/564 ,  H01L23/585 ,  H01L23/544 ,  H01L2223/5446

Abstract: Chip sealing structures and methods of manufacture are described. In an embodiment, a chip structure includes a main body area formed of a substrate, a back-end-of-the-line (BEOL) build-up structure spanning over the substrate, and chip edge sidewalls extending from a back surface of the substrate to a top surface of the BEOL build-up structure and laterally surrounding the substrate and the BEOL build-up structure. In accordance with embodiments, the chip structure may further include a conformal sealing layer covering at least a first chip edge sidewall of the chip edge sidewalls and a portion of the top surface of the BEOL build-up structure, and forming a lip around the top surface of the BEOL build-up structure.

公开(公告)号：US11824015B2

公开(公告)日：2023-11-21

申请号：US17397834

申请日：2021-08-09

Applicant: Apple Inc.

Inventor： Vidhya Ramachandran ,  Sanjay Dabral ,  SivaChandra Jangam ,  Jun Zhai ,  Kunzhong Hu

IPC: H01L23/00 ,  H01L21/78 ,  H01L23/58 ,  H01L23/544

CPC classification number: H01L23/562 ,  H01L21/78 ,  H01L23/544 ,  H01L23/564 ,  H01L23/585 ,  H01L2223/5446

Abstract: Chip sealing structures and methods of manufacture are described. In an embodiment, a chip structure includes a main body area formed of a substrate, a back-end-of-the-line (BEOL) build-up structure spanning over the substrate, and chip edge sidewalls extending from a back surface of the substrate to a top surface of the BEOL build-up structure and laterally surrounding the substrate and the BEOL build-up structure. In accordance with embodiments, the chip structure may further include a conformal sealing layer covering at least a first chip edge sidewall of the chip edge sidewalls and a portion of the top surface of the BEOL build-up structure, and forming a lip around the top surface of the BEOL build-up structure.

公开(公告)号：US11811303B2

公开(公告)日：2023-11-07

申请号：US17485022

申请日：2021-09-24

Applicant: Apple Inc.

Inventor： Chi Nung Ni ,  Sanjay Dabral

IPC: H02M1/15 ,  G06F1/3206 ,  H02M3/158

CPC classification number: H02M1/15 ,  G06F1/3206 ,  H02M3/1582

Abstract: Increases in current drawn from power supply nodes in a computer system can result in unwanted drops in the voltages of the power supply nodes until power supply circuits can compensate for the increased load. To lessen the effects of increases in load currents, a decoupling circuit that includes a diode may be coupled to the power supply node. During a charge mode, a control circuit applies a current to the diode to store charge in the diode. During a boost mode, the control circuit can couple the diode to the power supply node. When the voltage level of the power supply node begins to drop, the diode can source a current to the power supply node using the previously stored charge. The diode may be directly coupled to the power supply node or be part of a switch-based system that employs multiple diodes to increase the discharge voltage.

公开(公告)号：US11699949B2

公开(公告)日：2023-07-11

申请号：US17383983

申请日：2021-07-23

Applicant: Apple Inc.

Inventor： Sanjay Dabral ,  David A. Secker ,  Jun Zhai ,  Ralf M. Schmitt ,  Vidhya Ramachandran ,  Wenjie Mao

IPC: H02M3/07 ,  G05F3/10 ,  H01L29/66 ,  H01L23/00 ,  H01L23/522

CPC classification number: H02M3/07 ,  G05F3/10 ,  H01L23/5223 ,  H01L23/5227 ,  H01L24/17 ,  H01L29/66181 ,  H01L2224/02379

Abstract: Power management systems are described. In an embodiment, a power management system includes a voltage source, a circuit load located within a chip, and a switched capacitor voltage regulator (SCVR) coupled to voltage source and the circuit load to receive an input voltage from the voltage source and supply an output voltage to the circuit load. The SCVR may include circuitry located within the chip and a discrete integrated passive device (IPD) connected to the chip.