公开(公告)号：US20190017678A1

公开(公告)日：2019-01-17

申请号：US16055104

申请日：2018-08-05

Applicant: APPLE INC.

Inventor： Neil MacKinnon ,  Weiping Li ,  Xiaofeng Fan

IPC: F21V3/04 ,  H01S5/183 ,  H01S5/00

Abstract: A radiation source includes a semiconductor substrate, an array of vertical-cavity surface-emitting lasers (VCSELs) formed on the substrate, which are configured to emit optical radiation, and a transparent crystalline layer formed over the array of VCSELs. The transparent crystalline layer has an outer surface configured to diffuse the radiation emitted by the VCSELs.

公开(公告)号：US10072815B2

公开(公告)日：2018-09-11

申请号：US15190211

申请日：2016-06-23

Applicant: Apple Inc.

Inventor： Neil MacKinnon ,  Weiping Li ,  Xiaofeng Fan

IPC: F21V3/04 ,  H01S5/00 ,  H01S5/42 ,  H01S5/183 ,  F21Y115/30

CPC classification number: F21V3/049 ,  F21Y2115/30 ,  H01S5/005 ,  H01S5/18386 ,  H01S5/18388 ,  H01S5/18391 ,  H01S5/423

Abstract: A radiation source includes a semiconductor substrate, an array of vertical-cavity surface-emitting lasers (VCSELs) formed on the substrate, which are configured to emit optical radiation, and a transparent crystalline layer formed over the array of VCSELs. The transparent crystalline layer has an outer surface configured to diffuse the radiation emitted by the VCSELs.

公开(公告)号：US10003759B2

公开(公告)日：2018-06-19

申请号：US15225681

申请日：2016-08-01

Applicant: Apple Inc.

Inventor： Xiaofeng Fan

IPC: H04N5/369 ,  H01L27/146 ,  H04N5/335 ,  H01L27/148 ,  H04N9/04 ,  H01L29/78

CPC classification number: H04N5/369 ,  H01L27/14614 ,  H01L27/14616 ,  H01L27/14634 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14654 ,  H01L27/14843 ,  H01L29/7827 ,  H04N5/335 ,  H04N9/045

Abstract: A vertically stacked image sensor having a photodiode chip and a transistor array chip. The photodiode chip includes at least one photodiode and a transfer gate extends vertically from a top surface of the photodiode chip. The image sensor further includes a transistor array chip stacked on top of the photodiode chip. The transistor array chip includes the control circuitry and storage nodes. The image sensor further includes a logic chip vertically stacked on the transistor array chip. The transfer gate communicates data from the at least one photodiode to the transistor array chip and the logic chip selectively activates the vertical transfer gate, the reset gate, the source follower gate, and the row select gate.

公开(公告)号：US09929139B2

公开(公告)日：2018-03-27

申请号：US14641486

申请日：2015-03-09

Applicant: Apple Inc.

Inventor： Xiaofeng Fan ,  Xin Yi Zhang

IPC: H01L27/02 ,  H01L23/60 ,  H01L23/552

CPC classification number: H01L27/0255 ,  H01L23/552 ,  H01L23/60 ,  H01L27/0288 ,  H01L27/0292

Abstract: In an embodiment, an integrated circuit (IC) may include a circuit block that couples to one or more pins of the IC to communicate and/or receive power on the pins. The circuit block may include a ground connection, which may be electrically insulated/electrically separate from the ground connection of other components of the integrated circuit. In an embodiment, the circuit block may include an ESD protection circuit for the pad coupled to the pin. The IC may include another ESD protection circuit for the pad. The circuit block's ESD protection circuit may be sized for the current that may produced within the circuit block for an ESD event, and the IC's ESD protection circuit may be sized for the current that may be produced from the other components of the IC.

公开(公告)号：US09842875B2

公开(公告)日：2017-12-12

申请号：US15161179

申请日：2016-05-20

Applicant: Apple Inc.

Inventor： Xiaofeng Fan ,  Philip H. Li ,  Chung Chun Wan ,  Anup K. Sharma ,  Xiangli Li

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/1462 ,  H01L27/14625 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14685

Abstract: A pixel in an image sensor can include a photodetector and a storage region disposed in one substrate, or a photodetector disposed in one substrate and a storage region in another substrate. A buried light shield is disposed between the photodetector and the storage region. A sense region, such as a floating diffusion, can be adjacent to the storage region, with the buried light shield disposed between the photodetector and the storage and sense regions. When the photodetector and the storage region are disposed in separate substrates, a vertical gate can be formed through the buried light shield and used to initiate the transfer of charge from the photodetector and the storage region. A transfer channel formed adjacent to, or around the vertical gate provides a channel for the charge to transfer from the photodetector to the storage region.

公开(公告)号：US09819144B2

公开(公告)日：2017-11-14

申请号：US15019981

申请日：2016-02-10

Applicant: Apple Inc.

Inventor： Chin Han Lin ,  Kevin A. Sawyer ,  Neil MacKinnon ,  Venkataram R. Raju ,  Weiping Li ,  Xiaofeng Fan

IPC: H01S3/04 ,  H01S5/024 ,  H01S5/42 ,  H01S5/00 ,  H01S5/02 ,  H01S5/022

CPC classification number: H01S5/02469 ,  H01S5/0042 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/423

Abstract: A method for production of an optoelectronic device includes fabricating a plurality of vertical emitters on a semiconductor substrate. Respective top surfaces of the emitters are bonded to a heat sink, after which the semiconductor substrate is removed below respective bottom surfaces of the emitters. Both anode and cathode contacts are attached to the bottom surfaces so as to drive the emitters to emit light from the bottom surfaces. In another embodiment, the upper surface of a semiconductor substrate is bonded to a carrier substrate having through-holes that are aligned with respective top surfaces of the emitters, after which the semiconductor substrate is removed below respective bottom surfaces of the emitters, and the respective bottom surfaces of the emitters are bonded to a heat sink.

公开(公告)号：US09741754B2

公开(公告)日：2017-08-22

申请号：US13787094

申请日：2013-03-06

Applicant: Apple Inc.

Inventor： Xiangli Li ,  Xiaofeng Fan ,  Chung Chun Wan

IPC: H01L27/146 ,  H04N5/355 ,  H04N5/3745 ,  H04N5/378

CPC classification number: H01L27/14609 ,  H01L27/14616 ,  H04N5/35572 ,  H04N5/37452 ,  H04N5/378

Abstract: Apparatuses and methods for charge transfer in image sensors are disclosed. One example of an image sensor pixel may include a first charge storage node and a second charge storage node. A transfer circuit may be coupled between the first and second charge storage nodes, and the transfer circuit may have a first region proximate the first charge storage node and configured to have a first potential. The transfer circuit may also have a second region proximate the second charge storage node configured to have a second, higher potential. An input node may be configured to control the first and second potentials based on a transfer signal provided to the input node.

公开(公告)号：US09679891B2

公开(公告)日：2017-06-13

申请号：US14220293

申请日：2014-03-20

Applicant: Apple Inc.

Inventor： Sanjay Dabral ,  Xiaofeng Fan ,  Geertjan Joordens

IPC: H01L27/02 ,  H02H3/20 ,  H02H3/22 ,  H02H9/04

CPC classification number: H01L27/0285 ,  H02H3/20 ,  H02H3/22 ,  H02H9/046

Abstract: ESD protection circuitry is disclosed. In one embodiment, an integrated circuit includes first and second sensor circuits. The first sensor circuit has a first resistive-capacitive (RC) time constant, while the second sensor circuit has a second RC time constant. The RC time constant of the first sensor circuit is at least one order of magnitude greater than that of the second sensor circuit. A first clamp transistor is coupled to and configured to be activated by the first sensor circuit responsive to the latter detecting an ESD event. A second clamp transistor is coupled to and configured to be activated by the second sensor circuit responsive to the latter detecting the ESD event.

公开(公告)号：US09601480B2

公开(公告)日：2017-03-21

申请号：US14684841

申请日：2015-04-13

Applicant: Apple Inc.

Inventor： Junjun Li ,  Xin Yi Zhang ,  Xiaofeng Fan

IPC: H02H9/00 ,  H01L27/02 ,  H01L29/78

CPC classification number: H01L27/0262 ,  H01L27/0255 ,  H01L29/785

Abstract: In an embodiment, an ESD protection circuit may include a silicon-controlled rectifier (SCR) and a diode sharing a PN junction and forming a bi-directional ESD circuit. The single PN junction may reduce the capacitive load on the pin, which may allow the high speed circuit to meet its performance goals. In an embodiment, a floating P-well contact may be placed between two neighboring SCRs, to control triggering of the SCRs.

公开(公告)号：US09596420B2

公开(公告)日：2017-03-14

申请号：US14098504

申请日：2013-12-05

Applicant: Apple Inc.

Inventor： Xiaofeng Fan ,  Chiajen Lee ,  Michael R. Malone ,  Anup K. Sharma

IPC: H04N5/335 ,  H04N5/353 ,  H04N5/355

CPC classification number: H04N5/3535 ,  H04N5/35554

Abstract: An image sensor includes pixels that accumulate charge during a first integration period and pixels that accumulate charge during shorter second integration periods when an image is captured. The pixels having the shorter second integration period accumulate charge at two or more different times during the first integration period. Charge is read out of the pixels associated with the first integration period at the end of the first integration period, while charge is read out of the pixels having the second integration period at the end of each second integration period.

Abstract translation: 图像传感器包括在第一积分周期期间累积电荷的像素和当捕获图像的较短的第二积分周期期间累积电荷的像素。 具有较短的第二积分周期的像素在第一积分周期期间的两个或更多个不同时间积累电荷。 在第一积分周期结束时从与第一积分周期相关联的像素中读出电荷，同时在每个第二积分周期结束时从具有第二积分周期的像素中读出电荷。